JP4609867B2 - Ｓｏｉ基板の作製方法及び半導体装置の作製方法 - Google Patents

Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP4609867B2
JP4609867B2 JP20924899A JP20924899A JP4609867B2 JP 4609867 B2 JP4609867 B2 JP 4609867B2 JP 20924899 A JP20924899 A JP 20924899A JP 20924899 A JP20924899 A JP 20924899A JP 4609867 B2 JP4609867 B2 JP 4609867B2
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substrate
single crystal
layer
semiconductor substrate
oxide layer
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JP20924899A
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JP2000106424A (ja
JP2000106424A5 (enExample
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健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP20924899A 1998-07-29 1999-07-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Expired - Fee Related JP4609867B2 (ja)

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JP20924899A JP4609867B2 (ja) 1998-07-29 1999-07-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21412598 1998-07-29
JP10-214125 1998-07-29
JP20924899A JP4609867B2 (ja) 1998-07-29 1999-07-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

Related Child Applications (2)

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JP2010028296A Division JP2010171434A (ja) 1998-07-29 2010-02-11 半導体装置の作製方法
JP2010110077A Division JP5178775B2 (ja) 1998-07-29 2010-05-12 Ｓｏｉ基板の作製方法

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JP2000106424A JP2000106424A (ja) 2000-04-11
JP2000106424A5 JP2000106424A5 (enExample) 2006-08-31
JP4609867B2 true JP4609867B2 (ja) 2011-01-12

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2003142667A (ja) * 2001-08-24 2003-05-16 Seiko Epson Corp 半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器
JP4772258B2 (ja) * 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP2005026472A (ja) * 2003-07-02 2005-01-27 Sharp Corp 半導体装置の製造方法
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
CN101681843B (zh) 2007-06-20 2012-05-09 株式会社半导体能源研究所 半导体装置的制造方法
JP2009076729A (ja) * 2007-09-21 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7851318B2 (en) 2007-11-01 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
US7977206B2 (en) 2008-01-16 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate using the heat treatment apparatus
JP5646914B2 (ja) * 2010-08-24 2014-12-24 独立行政法人科学技術振興機構 トンネル接合素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092761B2 (ja) * 1991-12-02 2000-09-25 キヤノン株式会社 画像表示装置及びその製造方法
JP3262470B2 (ja) * 1993-12-28 2002-03-04 キヤノン株式会社 半導体基板およびその作製方法
JPH07283381A (ja) * 1994-04-08 1995-10-27 Canon Inc 貼合わせ半導体基体の製造方法
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法

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