JP4606348B2 - Substrate processing apparatus, substrate transport method, and storage medium - Google Patents

Description

  The present invention relates to a substrate processing apparatus, a substrate transport method, and a memory for performing a substrate processing such as a resist solution coating process and a developing process after exposure on a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display). It relates to the medium.

  In the manufacturing process of a semiconductor device or an LCD substrate, a resist pattern is formed on the substrate by a technique called photolithography. In this technology, for example, a resist solution is applied to a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), a liquid film is formed on the surface of the wafer, the resist film is exposed using a photomask, and then developed. Is performed by a series of steps to obtain a desired pattern.

  Such processing is generally performed using a resist pattern forming apparatus in which an exposure apparatus is connected to a coating / developing apparatus for coating and developing a resist solution. As an example of this apparatus, as shown in Patent Document 1, an area for storing a module before exposure processing and an area for storing a module after exposure processing are arranged up and down, and a conveying means is provided in each area. Thus, a configuration has been proposed in which the load on the transfer means is reduced and the transfer efficiency is increased, thereby increasing the throughput of the resist pattern forming apparatus.

  In this apparatus, for example, as shown in FIG. 16, a coating processing unit 10 and a development processing unit 11 are arranged one above the other, and in each processing unit, a predetermined amount is provided on both sides of the conveyance paths 12A and 12B extending in the lateral direction. The modules 13 and 14 are arranged, and the transfer means 15 and 16 move in the horizontal direction in the transfer paths 12A and 12B so that the substrates are transferred to the modules 13 and 14. In the figure, 17 is a port for loading / unloading the substrate, and 18 is an interface unit for transferring the substrate to / from an exposure system (not shown).

  By the way, in general, in a resist pattern forming apparatus, a filter unit for supplying clean gas is provided above the area in the substrate transfer area, and an exhaust path is provided on the lower side to clean the area. By forming a gas downflow and discharging the particles together with the airflow to the outside of the apparatus, adhesion of the particles to the substrate being transferred is suppressed.

  However, in the apparatus of the type shown in FIG. 16, the transport means 15 and 16 must move laterally along the transport paths 12A and 12B, and the travel distance is long, so that throughput can be improved. There is a demand for speeding up of the conveying means 15 and 16. For this reason, particles are generated with the movement of the conveying means 15 and 16 and may be rolled up. Further, in the apparatus, the pressure control is performed so that the transport passages 12A and 12B have a positive pressure rather than the clean room. However, this control may be disturbed or a slight gap may be generated in the apparatus. Sometimes turbulence occurs and particles tend to roll up. Here, in the above-described apparatus, since the coating processing unit 10 and the development processing unit 11 are multi-staged, the height of each processing unit is set low, and the transport area is narrow, the transport area and the floor surface are close to each other. Once particles are rolled up, they tend to adhere to the substrate being transported.

  Here, as a technique for transporting a substrate while suppressing adhesion of particles to the substrate, the configuration of Patent Document 2 has been proposed. This is a technique in which a receiving box is provided on a transfer-direction moving body movable along a transfer path via a rotating shaft, and the substrate is transferred in a state in which the substrate is stored in the receiving box. . However, since the storage box is provided so as to surround the substrate transfer member that transfers the substrate, the storage box needs to have a certain size, and the substrate transfer apparatus becomes large. For this reason, when the number of processing units is increased and the transfer area is further reduced, the application becomes difficult. In addition, the storage box includes a lid that closes the opening for transferring the substrate. However, in the configuration in which the lid is opened and closed each time the substrate is transferred to and from the processing module, the opening and closing operation is performed. This is not preferable from the viewpoint of conveyance efficiency.

Japanese Patent No. 3337677 (paragraph 0016, FIG. 3) JP 2002-83854 A (paragraphs 0046 to 0049, FIGS. 2 and 5)

  The present invention has been made under such circumstances, and an object of the present invention is to suppress adhesion of particles to a substrate in a substrate processing apparatus in which the substrate is transferred to the processing module by the substrate transport unit. Is to provide.

Substrate transfer to a processing module that performs processing on a substrate by a substrate transfer means that is provided on a base that moves in a transfer area so as to freely move forward and backward, and that has a plurality of holding arms for holding the substrate. In the substrate processing apparatus for performing
On side of the uppermost holding arm of the substrate transfer means, fixedly mounted on the base so as to be opposed to the holding arm, a rectifying plate a number of first suction holes formed therein,
On side of the current plate, a guide plate which is provided through the first ventilation space is fixed to the base so as to face the current plate,
A side wall provided between the current plate and the guide plate and surrounding the first ventilation space;
A first suction port that opens to the proximal end side of the holding arm in the first ventilation space;
A suction path connected to the first suction port ;
Means for generating a negative pressure in the first ventilation space and discharging the gas taken in from the first suction hole toward the suction path through the first suction port;
A gas nozzle for supplying gas from the front position in the advancing / retreating direction of the holding arm toward the lower side of the rectifying plate ,
By generating a negative pressure in said first vent space, forming an airflow which is sucked into the first suction port through the first suction holes and the first ventilation space from the lower side of the integer Nagareban However, the gas is supplied from the gas nozzle .
And the means for discharging the gas toward the suction path includes a first gas outlet for allowing the gas to flow from the distal end side to the proximal end side of the holding arm in the first ventilation space, By causing gas to flow from the first gas outlet to the first suction port in the first ventilation space, a negative pressure is generated in the first ventilation space by the ejector effect, and the You may comprise so that the airflow attracted | sucked to the said 1st suction port from the side via a 1st suction hole and 1st ventilation space may be formed.

  Here, a plurality of the processing modules are arranged in the horizontal direction, a plurality of arranged processing module groups are stacked, and a lower side of the processing module group is arranged in a horizontal direction corresponding to the arrangement of the processing module groups. An exhaust chamber that is open to a substrate transfer region extending in the direction and connected to a negative pressure is provided, and the substrate transfer means includes a base configured to be movable and elevate along the substrate transfer region, You may comprise the said suction path so that it may open to the said exhaust chamber, or it may open to the position which faces an exhaust chamber.

  The substrate processing apparatus includes a plurality of second suction holes formed on the floor surface of the transfer area, and a guide plate disposed below the floor surface of the transfer area via a second ventilation space. A second gas outlet and a second suction port for allowing gas to flow from one end side to the other end side of the second ventilation space, and a suction path connected to the second suction port; The gas is caused to flow from the second gas outlet to the second suction port, and is sucked into the second suction port by the ejector effect through the second suction hole and the second ventilation space. An air flow may be formed.

  Here, gas supply means is provided on the upper side of the region surrounding the substrate held by the holding arm of the substrate transfer means, and blows gas downward to form a gas curtain around the substrate. The gas supply means may be provided with a combination of ionizers. Further, the first suction hole formed in the rectifying plate is formed so as to be inclined so that the proximal end side of the holding arm is on the upper side in a region near the diameter along the advancing and retreating direction of the holding arm. In addition, the outer region of the region near the diameter along the advancing / retreating direction of the holding arm may be formed so as to be inclined upward toward the region near the diameter.

The substrate transfer method of the present invention, respectively retractably provided on the base for moving the transport region, the substrate transfer means having a plurality of holding arms for holding the substrate, the processing for the substrate In a substrate transfer method for delivering a substrate to a processing module to be performed,
On side of the uppermost holding arm of the substrate transfer means and fixed to the base so as to face the holding arm is provided with a plurality of first suction straightening vanes hole is formed, the rectifier on side of the plate, while via the first ventilation space provided fixed to the guide plate on the base so as to face the rectifying plate, the first vent between the guide plate and the rectifying plate A side wall surrounding the space is provided, and further, a gas nozzle for supplying gas toward the lower side of the rectifying plate is provided from a position on the front side of the holding arm in the advancing and retreating direction.
By generating a negative pressure in said first vent space, forming an airflow which is sucked into the first suction port through the first suction holes and the first ventilation space from the lower side of the integer Nagareban However, the substrate is transported between the processing modules by holding the substrate on the holding arm while supplying gas from the gas nozzle .

  Furthermore, the storage medium storing the computer program used in the substrate processing apparatus of the present invention is characterized in that the computer program includes a group of steps for carrying out the substrate transport method.

  A rectifying plate having a large number of first suction holes is provided on the uppermost holding arm of the substrate transfer means, and a guide plate is provided on the rectifying plate via a first ventilation space. By letting the gas flow from the first gas outlet to the first suction port in one ventilation space, the ejector effect causes the above-mentioned from the lower side of the rectifying plate to pass through the first suction hole and the first ventilation space. Since an air flow sucked into the first suction port is formed, an air flow directed upward from the substrate is generated on the surface of the substrate held by the holding arm. As a result, the particles in the transport region are drawn into the first ventilation space from the surface of the substrate, so that the particles are prevented from adhering to the substrate being transported by the substrate transport means.

  First, a resist pattern forming apparatus according to an embodiment of a substrate processing apparatus of the present invention will be described with reference to FIGS. FIG. 1 shows a plan view of an embodiment of the apparatus, FIG. 2 is a schematic perspective view thereof, and FIG. 3 is a schematic side view thereof. This apparatus is configured by vertically arranging a carrier block S1 for carrying in / out a carrier 20 in which, for example, 13 wafers W, which are substrates, are hermetically stored, and a plurality of, for example, four unit blocks B1 to B4. A processing block S2, an interface block S3, and an exposure apparatus S4 are provided.

  In the carrier block S 1, a mounting table 21 on which a plurality of the carriers 20 can be mounted, an opening / closing part 22 provided on a front wall as viewed from the mounting table 21, and a wafer from the carrier 20 via the opening / closing part 22. A transfer arm C for taking out W is provided. The transfer arm C can be moved forward and backward, can be raised and lowered, can be rotated about a vertical axis, and can be moved in the arrangement direction of the carrier 20 so as to transfer the wafer W to and from a transfer stage TRS1 of a unit block B1 to be described later. It is configured.

  A processing block S2 surrounded by a casing 24 is connected to the back side of the carrier block S1. In this example, the processing block S2 is, from below, a first unit block (DEV layer) B1 for performing development processing, and an antireflection film (hereinafter referred to as “first antireflection coating” formed on the lower layer side of the resist film). A second unit block (BCT layer) B2 for performing a film forming process), a third unit block (COT layer) B3 for performing a resist coating process, and an upper layer side of the resist film. Is assigned as a fourth unit block (TCT layer) B4 for forming an antireflection film (hereinafter referred to as “second antireflection film”), and each of the unit blocks B1 to B4 is partitioned. ing.

  Each of these unit blocks B1 to B4 is configured in the same manner, and a liquid processing module for applying a chemical solution to the wafer W, and a pre-processing and a post-processing for the processing performed in the liquid processing module. Various processing modules such as a heating module and a cooling module, and main arms A1 to A4 which are dedicated substrate transfer means for transferring the wafer W between the liquid processing module and the various processing modules. In addition, the arrangement layout of the liquid processing module, the heating / cooling system module, and the main arms A1 to A4 is the same among the unit blocks B1 to B4. Here, the same arrangement layout means that the center of placing the wafer W in each processing module is the same.

  Further, in the area adjacent to the carrier block S1 of each of the unit blocks B1 to B4, as shown in FIGS. 1 and 3, a shelf unit U2 is provided at a position where the transfer arm C and the main arms A1 to A4 can be accessed. ing. In this shelf unit U2, for example, delivery stages TRS1, TRS2, TRS3, and TRS4 are provided for each delivery block, for example, each of the DEV layer B1, BCT layer B2, COT layer B3, and TCT layer B4. The wafer W is delivered to the delivery stages TRS1 to TRS4 provided in the shelf unit U2 by the delivery arm D configured to be movable back and forth and up and down. Furthermore, in the area adjacent to the interface block S3 of the DEV layer B1, a shelf unit U3 is provided at a position accessible by the main arm A1 of the DEV layer B1, as shown in FIG. A delivery stage TRS11 is provided.

  On the other hand, an exposure apparatus S4 is connected to the back side of the shelf unit U3 in the processing block S2 via an interface block S3. The interface block S3 is configured to be able to move forward and backward, move up and down, and rotate about a vertical axis to transfer the wafer W to the transfer stage TRS11 of the shelf unit U3 of the DEV layer B1 and the exposure apparatus S4. An interface arm B is provided.

  In such a resist pattern forming apparatus, the flow of the wafer W when forming a coating film including the first antireflection film, the resist film, and the second antireflection film will be briefly described. The wafer W in the carrier 20 loaded into the block 21 is transferred to the BCT layer B2 by the transfer arm C via the transfer stage TRS1 and the transfer arm D of the shelf unit U2 of the DEV layer B1, and is transferred to a predetermined module here. The first antireflection film is formed by being sequentially conveyed.

  Subsequently, the wafer W is transferred from the BCT layer B2 to the COT layer B3 via the transfer stage TRS2, the transfer arm D, and the transfer stage TRS3 of the shelf unit U2, and is sequentially transferred to a predetermined module where the first reflection is performed. A resist film is formed on the prevention film. Next, the wafer W is transferred from the COT layer B3 to the TCT layer B4 via the transfer stage TRS3, the transfer arm D, and the transfer stage TRS4 of the shelf unit U2, and is sequentially transferred to a predetermined module where it is transferred onto the resist film. A second antireflection film is formed.

  Thereafter, the wafer W is transferred from the TCT layer B4 to the DEV layer B1 via the delivery stage TRS4, the delivery arm D, and the delivery stage TRS1 of the shelf unit U2, and further, the delivery stage TRS11 of the shelf unit U3 and the interface of the interface block S3. It is transported to the exposure apparatus S4 via the arm B, and a predetermined exposure process is performed. The wafer W after the exposure processing is transferred to the DEV layer B1 through the reverse path, and is sequentially transferred to a predetermined module for development processing. The wafer W thus subjected to the development processing is returned to the original carrier 20 placed on the carrier block S1 by the transfer arm C via the transfer stage TRS1 of the shelf unit U2.

  Next, the configuration of the unit blocks B1 to B4 will be described using the COT layer B3 as an example. At substantially the center of the COT layer B3, as shown in FIG. 1, a wafer W for transporting the carrier block S1 and the interface block S3 in the length direction of the COT layer B3 (Y direction in FIG. 1) is transferred. Region R1 is formed. On both sides of the transport area R1 viewed from the carrier block S1 side, a plurality of resist solutions are applied as the liquid processing module on the right side from the near side (carrier block S1 side) to the back side. An application unit 31 including an application processing unit is provided.

  In this example, the coating unit 31 includes three coating processing units 32 </ b> A to 32 </ b> C in a common processing container 30 that are arranged in the Y direction so as to face the transport region R <b> 1. Each of the coating processing units 32A to 32C supplies, for example, a resist solution that is a coating solution from a common chemical solution nozzle to a wafer W that is horizontally adsorbed and held on a spin chuck, and rotates the wafer W to generate a resist. Is applied to the entire surface of the wafer W so that a resist solution is applied to the surface of the wafer W. The processing container 30 includes transfer ports 33A to 33C (see FIG. 4) for wafers W at positions corresponding to the coating processing units 32A to 32C, and the wafers W correspond to the transfer ports 33A to 33C. The coating processing units 32A to 32C are transported between the main arm A3.

  Further, a shelf unit U1 in which processing modules are provided in, for example, 2 stages × 4 rows is provided on the side of the coating unit 31 facing the conveyance region R1, and in this figure, before the processing performed in the coating unit 31 is performed. Various processing modules are provided for processing and post-processing. Among the various processing modules described above, a heating module (CHP) that heat-processes the wafer W after application of the resist solution, a cooling module (COL) that adjusts the wafer W to a predetermined temperature, and a hydrophobic treatment module (ADH) Etc.

  As the heating module (CHP), for example, as shown in FIG. 1, a heating plate 34 and a cooling plate 35 that also serves as a transfer arm are provided, and the wafer W between the main arms A1 to A4 and the heating plate 34 is provided. An apparatus having a configuration in which delivery is performed by the cooling plate 35, that is, heating and cooling can be performed by one unit is used. As the cooling module (COL), for example, an apparatus including a cooling plate cooled by a water cooling method is used. Each module such as the heating module (CHP) and the cooling module (COL) is accommodated in a processing container 36 as shown in FIG. 4, for example, on the surface of each processing container 36 facing the transfer region R1. A wafer carry-in / out port 37 is formed.

  Here, since each of the coating processing units 32A to 32C of the coating unit 31 functions as a processing module, the coating unit 31 corresponds to a processing module group in which a plurality of processing modules are arranged in the horizontal direction, and the shelf unit U1. Corresponds to a processing module group in which a plurality of processing modules are arranged in the horizontal direction. Accordingly, the transport region R1 extending between the coating unit 31 and the shelf unit U1 corresponds to a transport region extending in the lateral direction corresponding to the arrangement of these processing modules.

  As described above, the shelf unit U1 has a plurality of processing module groups arranged in the horizontal direction, in which two stages are stacked in this example, and is provided above the exhaust unit 4 as shown in FIGS. Yes. The exhaust unit 4 includes a housing 40. The housing 40 is provided with a suction port 41, which is an exhaust opening, facing the transport region R1. Further, an exhaust chamber 42 is formed in the housing 40 along the transfer region R1, and a driving unit for moving a lifting guide rail described later is provided in the exhaust chamber 42. As shown in FIG. 7, the drive unit is provided at both ends in the longitudinal direction (Y direction) in the exhaust chamber 42, and is arranged between a drive pulley 43 and a driven pulley 44 that rotate around a horizontal axis, and both pulleys. The driving pulley 43 is rotated by a driving mechanism 46 including a motor, and the driving belt 45 circulates in accordance with this movement.

  The back side of the exhaust chamber 42 is, for example, a storage chamber 4B of an electrical unit (not shown), and the storage chamber 4B and the exhaust chamber 42 are partitioned by a partition wall 47. For example, a plurality of exhaust ports 48 are opened in the partition wall 47 at intervals along the transfer region R1, and the exhaust ports 48 communicate with an exhaust pipe 49 provided as a suction exhaust path. The exhaust pipe 49 extends between the electrical units and extends to the outside of the housing 40, for example. Each exhaust pipe 49 is provided with a fan 4C and a valve V in this order from the upstream side, and its end is connected to, for example, an exhaust passage of a factory.

  The fan 4C maintains the inside of the exhaust chamber 42 at a negative pressure, and is configured such that the suction exhaust amount can be adjusted by controlling the rotation speed by a control unit 100 described later, for example, a factory. When the exhaust capacity on the exhaust side is small and the exhaust amount as set can not be ensured, it is effective to perform the forced exhaust by providing the fan 4C. In this case, the exhaust amount of the fan 4C is controlled so that the transport region R1 has a positive pressure atmosphere as compared with the clean room. Further, the suction exhaust amount may be adjusted by adjusting the opening degree of the valve V while keeping the rotational speed of the fan 4C constant, or a damper is provided in place of the valve V. The suction exhaust amount may be adjusted by the damper. Furthermore, when the exhaust capacity of the factory is large and an exhaust amount greater than the designed amount can be secured without providing the forced exhaust means, the opening of the valve and the damper is adjusted without providing the forced exhaust means, and the transfer region R1. You may control so that it becomes a positive pressure rather than a clean room.

  Next, the main arm A3 that is a substrate transfer means provided in the transfer region R1 will be described. The main arm A3 transfers wafers to and from all modules (places where the wafer W is placed) in the COT layer B3, for example, the modules of the shelf unit U1, the coating unit 31, and the units of the shelf unit U2. For this purpose, it is configured to be movable forward and backward, freely movable up and down, rotatable about the vertical axis, and movable in the Y-axis direction.

  As shown in FIGS. 5 to 8, the main arm A <b> 3 includes two holding arms 51 and 52 for supporting the peripheral area on the back surface side of the wafer W. The holding arms 51 and 52 are bases. 53 is configured to be movable forward and backward independently of each other. Further, the base 53 is provided on the transport base 55 via the rotation mechanism 54 so as to be rotatable around the vertical axis. The main arm A3 includes a guide rail 56 that is a guide member extending in the length direction (Y direction in FIG. 1) of the transport region R1, and the guide rail 56 is provided with a horizontally elongated hole portion 56a along the length direction. It has been. The hole 56a and the suction port 41 overlap the guide rail 56 at a position facing the suction port 41 on the front surface of the exhaust unit 4, and the atmosphere in the transport region R1 is passed through the suction port 41 in the exhaust chamber 42. It is provided so that it can be sucked.

  In the figure, reference numeral 57 denotes an elevating guide rail, and the carrier base 55 is configured to be movable up and down along the elevating guide rail 57. In this example, the elevating guide rail 57, the holding arms 51 and 52, the base 53, and the transport base 55 constitute a moving part. The lower end portion of the elevating guide rail 57 of the main arm A3 is bent below the guide rail 56 and bent upward in the exhaust chamber 42 of the exhaust unit 4, and is locked to the drive belt 45. . Accordingly, the elevating guide rail 57 is moved along the horizontal guide rail 56 by the moving portion, so that the transfer base 55 can move in the transfer region R1 in the horizontal direction.

  Further, as shown in FIGS. 6 and 8, a hole 57a is provided in the front surface of the elevating guide rail 57 along the vertical direction, and the elevating guide rail 57 is provided with the hole 57a inside. An exhaust passage 57 b is formed so as to communicate, and the exhaust passage 57 b is connected to the exhaust chamber 42 via the suction port 41. When the pressure in the exhaust chamber 42 is set to a negative pressure in this manner, the airflow flowing into the suction port 41 from the transport region R1 through the hole portion 56a of the guide rail 56 and the hole portion 57a of the lifting guide rail 57 from the transport region R1. Is formed.

  A rectifying plate 61 is provided on the uppermost holding arm 51 of the main arm A3 so as to face the holding arm 51 at the transfer position. The transport position is a position shown in FIGS. 5 and 6 and a position where the holding arm 51 is located above the base 53. The rectifying plate 61 is made of, for example, a disk having a size that covers the holding arm 51, and has a large number of first suction holes 62 formed therein. In FIG. 8, a part of the first suction hole 62 is shown for convenience of illustration.

  On the rectifying plate 61, a guide plate 64 made of, for example, a disc having substantially the same size as the rectifying plate 61 is provided through the first ventilation space 63 so as to face the rectifying plate 61. In addition, the space between the current plate 61 and the guide plate 64 is covered by the side wall 60. That is, the periphery of the first ventilation space 63 is surrounded by the side wall 60.

  A support member 65 is connected to the base end side of the holding arms 51, 52 of the side wall portion 60, and the support member 65 is bent in the middle to attach the holding arms 51, 52 to the base 53. Further, the holding arms 51 and 52 are attached to the rear side in the advancing and retracting direction. Thus, the rectifying plate 61 and the guide plate 64 are provided on the base 53 via the support member 65. Further, a suction path 65a is formed inside the support member 65, and a connection portion of the support member 65 with the side wall portion 60 is opened as a first suction port 66, whereby the first ventilation is provided. The first suction port 66 is formed on the proximal end side of the holding arm in the space 63.

  As shown in FIG. 6, the suction path 65a formed in the support member 65 is connected to suction paths 53a, 54a, and 55a formed in the base 53, the rotation mechanism 54, and the transport base 55, respectively. The other end side of the suction path 55 a of the transport base 55 is formed so as to open at a position facing a hole 57 a formed in the lifting guide rail 57. The facing position means that the suction path 55a is sucked by the exhaust chamber 42 through the hole 57a and the exhaust path 57b of the lifting guide rail 57 when the transport base 55 is lifted and lowered along the lifting guide rail 57. The position to be done. For this reason, the suction path 65a formed in the support member 65 is connected to the elevating guide rail 57 via suction paths 53a, 54a, and 55a formed in the base 53, the rotation mechanism 54, and the transport base 55, respectively. It is connected to the exhaust path 57b and is thus sucked by the exhaust chamber.

  Thus, the suction path 65a formed on the support member 65, the base 53, the rotation mechanism 54, the suction paths 53a, 54a, 55a of the transport base 55, and the exhaust path 57b of the lifting guide rail 57 are the first. This corresponds to a suction path connected to the suction port 66. In this example, the exhaust path 57b of the elevating guide rail 57 opens to a position facing the exhaust chamber 42. However, the exhaust path 57b of the elevating guide rail 57 is provided so as to extend into the exhaust chamber 42, and the exhaust path 57b. These ends may be opened in the exhaust chamber 42.

  The first suction holes 62 formed in the rectifying plate 61 are formed along the advancing and retreating directions of the holding arms 51 and 52 of the rectifying plate 61, as shown in FIGS. It is formed to be inclined so that the base end side of 52 is on the upper side. The first suction hole 62 is configured, for example, by attaching a cover body 62b to the square hole portion 62a from the back side of the rectifying plate 61. In this example, the cover body 62b is the front side of the holding arms 51 and 52 in the advancing / retreating direction. When viewed from above, the lower side forms a substantially semicircular opening 62c having an arc shape, and is provided so as to close the hole 62a while tilting so that the base end side of the holding arms 51, 52 is on the upper side. Thus, the first suction hole 62 is formed to be inclined so that the proximal end sides of the holding arms 51 and 52 are on the upper side. Here, the shape of the hole 62b is not limited to a quadrangle, and the substantially semicircular shape of the opening 62c includes not only the case of cutting with a circle diameter but also the case of cutting at a position shifted from the diameter.

  Further, on the front side of the guide plate 64 in the advancing / retreating direction of the holding arms 51, 52, a first gas for flowing gas from the front end side to the base end side of the holding arms 51, 52 in the first ventilation space 63. A gas nozzle 7 forming a gas outlet is provided. The gas nozzle 7 supplies an inert gas, for example, nitrogen gas, to the first ventilation space 63 from the front side of the holding arms 51 and 52 in the forward / backward direction, and a part of the gas nozzle 7 protrudes downward from the rectifying plate 61 to rectify the gas. It is configured to be supplied in the form of a spray toward the lower side of the plate 61.

  The gas blown out from the gas nozzle 7 is preferably a gas that has been passed through an ionizer. The reason for this is that static electricity is generated during transfer of the wafer W in the transfer region R1 and the surface of the wafer W is charged, resulting in a potential of several kilovolts or more. This is to prevent the adsorbing. The ionizer is called a static eliminator and basically generates equal amounts of positive gas ions and negative gas ions. When this gas hits a charged object, it repels the ions of the same polarity and has the opposite polarity. As a result, the charged material is neutralized.

  FIG. 9 shows an example in which an ionizer is provided in the gas nozzle 7. Reference numeral 71 denotes a nozzle body, and 72 denotes a gas supply path. The other end of the gas supply path 72 is connected to, for example, a gas supply unit 95 described later, as shown in FIG. The nozzle body 71 is provided with an electrode 73 constituting an ionizer, and this electrode 73 is connected to a DC power source 75 via a cable 74 forming a power feeding path. As the shape of the electrode 73, an electrode in which a plurality of rod-shaped electrodes are arranged so as to intersect with the gas passage so as to efficiently contact the gas passing through the nozzle body 71 can be used. The gas is ionized when it comes into contact with an unequal electric field formed around 73. In addition, what is necessary is just to provide an ionizer in the site | part which passes gas, for example, you may provide in the gas supply path 72 between the gas nozzle 7 and the gas supply part 95. FIG.

  Furthermore, the floor surfaces of the unit blocks B1 to B4 (base plates that divide the unit blocks B1 to B4) have a double structure. Specifically, with reference to FIGS. 5 and 6, the COT layer B3 will be described as an example. Under the floor surface 81 of the COT layer B3, a guide plate 83 is disposed via a second ventilation space 82. Has been. The guide plate 83 constitutes the ceiling wall of the BCT layer B3.

  A second suction port 84 for exhausting the atmosphere of the second ventilation space 82 to the exhaust chamber 42 side is located at a position corresponding to the exhaust chamber 42 of the exhaust unit 4 on the floor surface 81 of the transfer region R1. Is formed. Thereby, the atmosphere in the second ventilation space 82 is exhausted to the exhaust chamber 42 via the second suction port 84 from the other end side of the transfer region R1, in this example, the shelf unit U1 side. In this example, the suction port 84 for connecting to the exhaust chamber 42 corresponds to a suction path connected to the second suction port 84.

  A large number of second suction holes 85 are formed in the floor surface 81 of the transfer region R1 so as to be inclined so that the other end side is on the lower side, for example. In this example, as shown in FIGS. 5 and 6, the second suction hole 85 has a cover body 85b that is inclined obliquely downward toward the other end, for example, on a square hole 85a. Configured. In this example, when viewed from the application unit 31 side, the cover body 85b forms a substantially semicircular opening 85c having an arc shape on the top, and the other end side (the shelf unit U1 side) is on the lower side. The second suction hole 85 is formed so as to be inclined so that the other end side is on the lower side.

  Further, if the position in the second ventilation space 82 that is close to the coating unit 31 side, that is, the upper side of the slope of the second suction hole 85 is defined as one end side (coating unit side), the second suction on one end side. A second gas blowing port 9 for supplying an inert gas such as nitrogen gas from one end side to the other end side of the second ventilation space 82 is provided at a position outside the hole 85.

  For example, as shown in FIG. 10, the second gas blowing port 9 includes a rectangular housing 91, for example, along the length direction (Y direction shown in FIG. 1) of the second ventilation space 82. It is provided so as to cover the entire area of the second ventilation space 82 and supply gas toward the unit block (BCT layer B3 in the example of FIG. 5) below the second ventilation space 82. Yes. The surface of the housing 91 that faces the second ventilation space 82 and the surface that faces the unit block below the second ventilation space 82 have a punching metal structure, for example, and communicate with the space in the housing 91. A number of holes 92 are provided. In addition, an air supply pipe 94 having a gas discharge port 93 on the side is disposed in the casing 91, and the air supply pipe 94 is connected to a gas supply unit 95 that supplies clean gas into the pipe 94. Has been. The gas supply unit 95 includes a supply source 96 of an inert gas such as a nitrogen gas, and a temperature / humidity adjustment unit 97 that adjusts the temperature and humidity of the gas supplied from the supply source 96. The gas supply unit 95 is also connected to the gas supply path 72 of the gas nozzle 7 described above.

  Further, a particle removal Ulpa (ULPA) filter 98 is provided in the housing 91 so as to surround the side of the air supply tube 94, and clean gas whose temperature and humidity are adjusted is supplied from the gas supply unit 95 to the air supply tube 94. When supplied to the inside, the clean gas is discharged from the gas discharge port 93, passes through the Ulpa filter 98, passes through the hole 92, and enters the second ventilation space 82 and below the second ventilation space 82. It is configured to be supplied to the side unit block.

  The other unit blocks will be briefly described. All of the unit blocks B2 to B4 for forming the coating film are configured in the same manner, and the BCT layer B2 is a first liquid processing module with respect to the wafer W. A first antireflection film forming unit for performing an antireflection film forming process is provided, and the shelf unit U1 includes a heating module that heat-processes the wafer W after the antireflection film forming process, and the wafer W at a predetermined temperature. It includes a cooling module for adjusting the temperature. Further, the TCT layer B4 is provided with a second antireflection film forming unit for forming a second antireflection film on the wafer W as a liquid processing module, and the antireflection film is formed on the shelf unit U1. A heating module that heat-processes the processed wafer W, the cooling module, and a peripheral exposure apparatus are provided.

  The DEV layer B1 is configured in substantially the same manner as the COT layer B3 described above except that the shelf unit U1 is configured in 3 stages × 4 rows and includes the shelf unit U3. A developing unit for performing a developing process on the heating unit, and the shelf unit U1 includes a heating module for heating the wafer W after the exposure and heating the wafer W after the developing process in order to remove moisture, A cooling module or the like for adjusting the wafer W to a predetermined temperature is included. The first and second antireflection film forming units and the developing unit are configured in substantially the same manner as the coating unit 31.

  Here, for example, in the TCT layer B4 which is the uppermost unit block, the second gas blowing port 9 is provided at a position near the liquid processing module on the upper side of the transport region R1 inside the TCT layer B4. A gas is supplied only to the second ventilation space 82 from the second gas outlet 9 provided in the second ventilation space 82 of the DEV layer B1 to the DEV layer B1 which is the lowest unit block. It has come to be.

  The resist pattern forming apparatus described above manages recipes for each processing module, manages recipes for the transfer flow (transfer path) of the wafer W, processes in each processing module, main arms A1 to A4, transfer arms C, A control unit 100 including a computer that performs drive control of the transfer arm D and the interface arm B is provided. The control unit 100 has a program storage unit made up of, for example, a computer program. In the program storage unit, an operation of the entire resist pattern forming apparatus, that is, a predetermined resist pattern is applied to the wafer W in the resist pattern forming apparatus. Steps (such as transfer of the wafer W, processing in each processing module, exhaust of the exhaust unit 4, supply of gas to the gas nozzle 7 and the second gas outlet 9, and stop for forming) A program including, for example, software having an instruction) group is stored. Then, by reading these programs to the control unit 100, the control unit 100 controls the operation of the entire resist pattern forming apparatus. The program is stored in the program storage unit while being stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.

  In such an apparatus, since nitrogen gas is supplied into the COT layer B3 from the second gas outlet 9 of the TCT layer 4 which is the upper unit block, the transport region R1 of the COT layer B3 includes Nitrogen gas is supplied from the position near the coating unit 31 on the upper side over the length direction (Y direction in FIG. 1) of the transport region R1. On the other hand, from the exhaust unit 4 provided on the lower side of the shelf unit U1, when the exhaust chamber 42 is set to a negative pressure by the fan 4C, the atmosphere of the transport region R1 is formed along the length direction of the transport region R1. Then, the air is sucked from the suction port 41 and the hole 57a of the elevating guide rail 57, and exhausted to the outside of the exhaust unit 4 through the exhaust path 57b and the exhaust chamber 42.

  In this way, in the COT layer B3, the gas is supplied from above the coating unit 31 on the one end side and exhausted from the lower side of the shelf unit U1 on the other end side with the transport region R1 interposed therebetween. A downflow that flows in one direction from the coating unit 31 side to the shelf unit U1 side is formed in the middle X direction. For this reason, the particles generated in the transport region R1 ride on the downflow airflow toward the exhaust unit 4, enter the exhaust chamber 42 via the suction port 41, and are discharged from here.

  In the main arm A3, a first suction port 66 is formed so as to open to the proximal end side of the holding arms 51 and 52 of the first ventilation space 63 which is a closed space. The suction guide rail 57, the conveying base 55, the rotation mechanism 54, the base 53, and the support member 65 are sucked through suction paths formed inside, and the holding arm 51 in the first ventilation space 63 is formed by the gas nozzle 7. , 52, a gas flows from the distal end side to the proximal end side, so that a strong airflow that flows in one direction from the gas nozzle 7 toward the first suction port 66 is generated in the ventilation space 63.

  Since the rectifying plate 61 has a large number of first suction holes 62, if a strong air flow is generated in the ventilation space 63, a strong suction force is exerted on the suction holes 62 due to the ejector effect of the air flow. Occurs. As a result, the atmosphere below the rectifying plate 61 is sucked into the first ventilation space 63 through the suction hole 62. For this reason, even if particles are generated in the transfer region R1, the atmosphere in the vicinity of the wafer W held by the holding arm 51 at the transfer position is sucked upward from the wafer surface. Is not attached to the wafer W on the holding arms 51 and 52 but is drawn into the first ventilation space 63 through the first suction hole 62, passes through the first suction port 66, and passes through the exhaust unit 4. It is discharged outside. Thus, adhesion of particles to the wafer W being transferred is suppressed by the main arm A3.

  At this time, the rectifying plate 61 is formed with a first suction hole 62 that is inclined so that the proximal ends of the holding arms 51 and 52 face upward, whereby the unidirectional airflow is generated in the ventilation space 63. As a result, the atmosphere below the rectifying plate 61 along the suction hole 62 is easily drawn into the ventilation space 63. Therefore, the particles on the upper side of the wafer W held by the holding arm 51 are easily sucked into the first ventilation space 63 together with the atmosphere in the region, and the adhesion of the particles to the wafer W being transferred is further suppressed. be able to.

  In the second ventilation space 82 formed below the floor surface 81 of the COT layer B3, the exhaust unit 4 exhausts air from the other end side of the transfer region R1 and the second gas as described above. By supplying nitrogen gas from the one end side of the transfer region R1 into the second ventilation space 82 through the blowout port 9, the second ventilation space 82 is moved from the one end side to the other end side. A strong directional airflow is generated.

  Since the floor surface 81 is formed with a large number of second suction holes 85, the floor surface 81 is connected to the floor through the suction holes 85 due to the ejector effect caused by the gas flow in the second ventilation space 82. The atmosphere above the surface 81 is sucked into the second ventilation space 82. At this time, by forming a second suction hole 85 inclined on the floor surface 81 so that the other end faces downward, the unidirectional air flow is generated in the ventilation space 82. The atmosphere above the floor surface 81 is easily drawn into the ventilation space 82. Accordingly, particles near the floor surface of the transport region R1 are reliably sucked into the second ventilation space 82 together with the atmosphere through the second suction hole 85, and the drawn particles are sucked into the second suction port 84. Enters the exhaust chamber 42 and is discharged from here to the outside.

  In the above-described apparatus, the rectifying plate 61 and the guide plate 64 are provided above the holding arms 51 and 52 of the main arm A3, and gas is allowed to flow through the ventilation space 63 therebetween. Since a simple configuration in which the upper particles are sucked into the ventilation space 63 is employed, the adhesion of the particles to the wafer W being transferred can be reliably suppressed while avoiding an increase in the size of the main arm A3. For this reason, the present invention can also be applied to a main arm provided in a narrow conveyance region, and therefore, a plurality of unit blocks are stacked, the height of each unit block is small, and the application to the resist pattern forming apparatus described above is narrow. It is valid.

  Further, the clean gas is supplied in a spray form from the gas nozzle 7 to the front side of the first aeration space 63 and the wafer W on the holding arms 51 and 52 at the transfer position in the forward and backward direction of the holding arms 51 and 52. Thus, this acts as an air curtain on the front side of the wafer W, and the entry of particles from the front side of the wafer W can be suppressed. Further, by providing the gas nozzle 7 with an ionizer, the charged matter generated on the wafer W is neutralized, thereby suppressing the generation of static electricity, so that the adsorption of particles on the wafer W due to static electricity can be suppressed.

  Furthermore, since both the current plate 61 and the guide plate 64 are attached to the base 53 of the main arm A3 via the support member 85, the current plate 61 and the guide plate 64 can be moved up and down together with the holding arms 51 and 52 and moved in the lateral direction. , Configured to be rotatable about a vertical axis. As a result, the rectifying plate 61 and the guide plate 64 are always positioned above the wafer W on the holding arms 51 and 52 at the transfer position, so that the particles are reliably attached to the wafer W being transferred. Can be suppressed.

  Further, the floor surface 81 of the unit block has a double structure, and a strong suction force is generated by the ejector effect, whereby the atmosphere above the floor surface 81 is drawn into the second ventilation space 82. For this reason, particles are likely to be present in the vicinity of the floor surface 81 in the transport region R1, but since the particles are reliably drawn into the second ventilation space 82, the particles in the vicinity of the floor surface 81 are rolled up in the transport region R1. Therefore, the adhesion of particles to the wafer W held by the holding arms 51 and 52 can be prevented more reliably.

  Furthermore, both the first ventilation space 63 and the second ventilation space 82 are connected to the exhaust chamber 42 of the exhaust unit 4 of the unit block provided with them, and are sucked through the exhaust chamber 42. As described above, the exhaust of the unit block and the suction exhaust of the first ventilation space 63 and the second ventilation space 82 are performed by the common exhaust system, so that compared to the case where separate exhaust systems are prepared for each. Thus, the configuration of the exhaust system is simplified and control is facilitated. Further, since the installation space for the exhaust system can be small, it meets the demand for downsizing of the apparatus.

  As described above, in the present invention, as shown in FIG. 11, the gas supply means 76 for blowing gas downward is provided above the area surrounding the wafer W held by the holding arms 51 and 52 at the transfer position. It may be. In this example, the gas supply means 76 is configured to include a nozzle portion 76a for supplying a gas, for example, nitrogen gas, in a ring shape around the guide plate 64, and is thereby held by the holding arm 51 at the transfer position. The gas is supplied to the wafer W in a spray form from the peripheral direction of the wafer W. The gas supply means 76 is connected to the base 53 by a holding member 77 provided on the side corresponding to the base end side of the holding arms 51 and 52, for example, and is connected to the gas supply unit 95 described above, for example.

  Since the gas is supplied to the wafer W held by the holding arms 51 and 52 in the transfer position in this manner so as to surround the wafer W from above, a gas curtain is formed around the wafer W. As a result, adhesion of particles to the wafer W being transferred can be more reliably suppressed. An ionizer may be incorporated in the gas supply means 76.

  Furthermore, in the present invention, as shown in FIG. 12, a top plate 50 is provided between the upper holding arm 51 and the lower holding arm 52 so as to face the holding arm 52 and cover the holding arm 52. You may do it. In this example, the top plate 50 is formed in a disk shape that is substantially the same size as or larger than the holding arm 52, and is attached to the support member 65. In such a configuration, adhesion of particles from the upper side to the wafer W on the lower holding arm 52 is suppressed. Similarly to the guide plate 64, the top plate 50 is provided with a gas nozzle 7 on the front side of the holding arms 51 and 52 in the advancing / retreating direction so that gas is supplied in a spray form toward the wafer W on the holding arm 52. May be.

  Further, as shown in FIG. 13, a housing 78 surrounding the holding arms 51 and 52 and the base 53 is provided, and the guide plate and the rectifying plate 61 may be incorporated in the housing 78. Good. In this example, for example, the casing 78 has a quadrangular planar shape, and an opening 78a for advancing / retreating the arms 51, 52 is formed on the side corresponding to the distal ends of the holding arms 51, 52. The ceiling wall 78b functions as a guide plate, and the ceiling region is partitioned by the rectifying plate 61 to form a double structure. The first ventilation is provided between the ceiling wall (guide plate) 78b and the rectifying plate 61. A space 78c is formed. A suction pipe 79 is connected to the base end side of the holding arms 51 and 52 of the first ventilation space 78c of the housing 78, and the suction pipe 79 is formed on the base 53 at the other end side. It is connected to the path 53a. A connection site of the suction pipe 79 in the first ventilation space 78c is formed as a first suction port 79a. Other configurations are the same as those of the main arm A3 shown in FIG.

  In such a configuration, since the periphery of the holding arms 51 and 52 is partitioned by the housing 78, it is difficult for particles to enter the housing 78. Further, since gas is supplied from the gas nozzle 7 in the vicinity of the opening 78a, this acts as a gas curtain, and can further prevent particles from entering the housing 78. Even if particles enter the housing 78, the particles are sucked into the first ventilation space 78c through the first suction hole 62 due to the ejector effect of the first ventilation space 78c. Particle adhesion to the wafer W being transferred can be more reliably suppressed.

  In the present invention, for example, as shown in FIG. 14, the first suction hole 62 formed in the rectifying plate 61 is in a region near the diameter along the advancing and retreating direction of the holding arms 51 and 52 of the rectifying plate 61. The holding arms 51 and 52 are formed so as to incline so that the base end side is on the upper side, and in the outer region of the rectifying plate 61 in the region near the diameter, it is inclined upward toward the region near the diameter. It may be formed. FIG. 14 is a plan view seen from the back side of the rectifying plate 61, with the cover 62 b on the back side of the rectifying plate 61 and the circular arc part on the lower side of the hole 62 a of each suction hole 62. Respectively.

  As shown in FIG. 8, the suction holes 62 are formed in the region near the diameter, and the cover body 62b faces the side away from the region near the diameter in the outer region near the diameter. The lower side is provided so as to form a semicircular opening 62c formed in an arc shape, whereby the first suction hole 62 in this region is inclined upward toward the region near the diameter. It will be formed to do.

  When the first suction holes 62 are formed in such a pattern, the atmosphere on the lower side of the region near the diameter of the rectifying plate 61 is such that the first suction holes 62 are on the base end sides of the holding arms 51 and 52. Therefore, it is drawn into the first ventilation space 63 along the inclined suction hole 62 so as to go to the proximal end side of the holding arms 51 and 52. On the other hand, the atmosphere on the lower side outside the region near the diameter of the rectifying plate 61 is formed so that the first suction hole 62 is inclined upward toward the region near the diameter. Along the first vent space 63, the first vent space 63 is drawn toward the area near the diameter. For this reason, particles collected from the outside of the area near the diameter to the area near the diameter easily flow toward the first suction port 66 in the area near the diameter, and the particles drawn into the first ventilation space 63. Can be discharged to the outside of the ventilation space 63 more reliably.

  Furthermore, the first suction hole 62 and the second suction hole 85 may be formed so as to be inclined so long as the atmosphere is drawn into the first ventilation space 63 and the second ventilation space 82 due to the ejector effect. It is not always necessary. Further, for example, as shown in FIG. 15 by taking the second vent hole 99 as an example, the floor surface 81 may be formed so as to be inclined so that the other end side of the transfer region R1 faces downward.

  Furthermore, in the examples shown in FIGS. 6, 12, and 13, gas is supplied from the gas nozzle 7 to the inside of the first ventilation space 63 and the lower side of the rectifying plate 61. Gas may be supplied only to the first ventilation space 63, and gas may be supplied to the lower side of the rectifying plate 61 by another gas supply means. In the second gas outlet 9 as well, the gas may be supplied only to the second ventilation space 82 and the gas may be supplied to the lower unit block by another gas supply means. Further, an ionizer may be provided in combination with the second gas outlet 9. Furthermore, the second ventilation space 82 is not exhausted through the exhaust unit 4, but the second ventilation space 82 is formed as a closed space, and an exhaust means is provided on the other end side of the second ventilation space 82. You may make it connect.

  Also, the present invention does not necessarily require suction exhaust to the lower side of the floor surface of the unit block, and by providing a current plate having a first suction hole only on the main arm and a guide plate, a wafer being transferred Particle adhesion to W may be suppressed. Further, the rectifying plate 61 and the guide plate 64 may have a polygonal planar shape, or the transfer arm D may be provided with a rectifying plate having a first suction hole and a guide plate.

  Furthermore, the present invention can be applied to devices other than the above-described devices, and can also be applied to devices of a type in which the substrate transfer means does not move in the lateral direction. Furthermore, the present invention can be applied not only to a semiconductor wafer but also to a substrate processing apparatus for processing a substrate such as a glass substrate (LCD substrate) for a liquid crystal display.

1 is a plan view showing an embodiment of a resist pattern forming apparatus according to the present invention. It is a perspective view which shows the said resist pattern formation apparatus. It is side part sectional drawing which shows the said resist pattern formation apparatus. It is a perspective view which shows the shelf unit, main arm, and liquid processing module which are provided in the said resist pattern formation apparatus. It is sectional drawing which shows a part of COT layer provided in the said resist pattern formation apparatus. It is sectional drawing which shows a part of COT layer provided in the said resist pattern formation apparatus. It is sectional drawing which shows the exhaust unit and main arm which are provided in the said COT layer. It is a perspective view which shows the main arm provided in the said COT layer. It is a perspective view which shows the gas nozzle provided in the said main arm. It is sectional drawing which shows the 2nd gas blower provided in the said COT layer. It is the top view and sectional drawing which show the main arm of the other example of this invention. It is sectional drawing which shows the main arm of the further another example of this invention. It is the top view and sectional drawing which show the main arm of the further another example of this invention. It is a rear view which shows the 1st suction hole provided in the baffle plate of the main arm of this invention. It is sectional drawing which shows the other example of the 2nd suction hole of this invention. It is a perspective view which shows the conventional resist pattern formation apparatus.

Explanation of symbols

W Semiconductor wafer 20 Carrier S1 Carrier block S2 Processing block S3 Interface block S4 Exposure apparatuses A1 to A4 Main arm B Interface arm C Transfer arm D Transfer arm CHP Heating module COL Cooling module U1 Shelving unit 31 Coating unit 4 Exhaust unit 41 Suction port 42 Exhaust chamber 4C Fan 51, 52 Holding arm 53 Base 61 Rectifying plate 62 First vent hole 63 Second vent space 64 Guide plate 66 First suction port 7 Gas nozzle 81 Floor 82 Second vent space 83 Guide Plate 84 Second suction port 85 Second suction hole 9 Second gas outlet 100 Control unit

Claims (10)

Substrate transfer to a processing module that performs processing on a substrate by a substrate transfer means that is provided on a base that moves in a transfer area so as to freely move forward and backward, and that has a plurality of holding arms for holding the substrate. In the substrate processing apparatus for performing
On side of the uppermost holding arm of the substrate transfer means, fixedly mounted on the base so as to be opposed to the holding arm, a rectifying plate a number of first suction holes formed therein,
On side of the current plate, a guide plate which is provided through the first ventilation space is fixed to the base so as to face the current plate,
A side wall provided between the current plate and the guide plate and surrounding the first ventilation space;
A first suction port that opens to the proximal end side of the holding arm in the first ventilation space;
A suction path connected to the first suction port ;
Means for generating a negative pressure in the first ventilation space and discharging the gas taken in from the first suction hole toward the suction path through the first suction port;
A gas nozzle for supplying gas from the front position in the advancing / retreating direction of the holding arm toward the lower side of the rectifying plate ,
By generating a negative pressure in said first vent space, forming an airflow which is sucked into the first suction port through the first suction holes and the first ventilation space from the lower side of the integer Nagareban However, the substrate processing apparatus supplies gas from the gas nozzle . The means for discharging gas toward the suction path includes a first gas outlet for allowing gas to flow from the distal end side to the proximal end side of the holding arm in the first ventilation space, By causing gas to flow from the first gas outlet to the first suction port in one ventilation space, a negative pressure is generated in the first ventilation space by the ejector effect, and from the lower side of the rectifying plate 2. The substrate processing apparatus according to claim 1, wherein an air flow sucked into the first suction port through the first suction hole and the first ventilation space is formed. A plurality of the processing modules are arranged in the horizontal direction, and a plurality of arranged processing module groups are stacked, and a lower side of the processing module group is arranged in the horizontal direction corresponding to the arrangement of the processing module groups. There is an exhaust chamber that opens to the substrate transfer area and is connected to negative pressure,
The substrate transport means includes a base configured to be movable and movable up and down along the transport region of the substrate,
The suction passage substrate processing apparatus according to claim 1 or 2, characterized in that it is open to a position facing the one open to the exhaust chamber or the exhaust chamber. A number of second suction holes formed in the floor surface of the transfer area;
A guide plate disposed on the lower side of the floor surface of the transfer region via a second ventilation space;
A second gas blowing port and a second suction port for allowing gas to flow from one end side to the other end side of the second ventilation space;
A suction path connected to the second suction port,
By causing the gas to flow from the second gas outlet to the second suction port, an air flow sucked into the second suction port through the second suction hole and the second ventilation space is formed by the ejector effect. 4. The substrate processing apparatus according to claim 3, wherein: Provided on the upper side of the area surrounding the substrate held by the holding arm of the substrate transfer means, and provided with gas supply means for forming a gas curtain around the substrate by blowing gas downward the substrate processing apparatus according to any one of claims 1 to 4, characterized in. 6. The substrate processing apparatus according to claim 5 , wherein the gas supply means is provided in combination with an ionizer. The first suction hole formed in the rectifying plate is formed so as to be inclined so that the proximal end side of the holding arm is on the upper side in a region near the diameter along the advancing / retreating direction of the holding arm. A substrate processing apparatus according to any one of claims 1 to 6 . The first suction hole formed in the rectifying plate is formed so as to incline upward toward the region near the diameter in the outer region of the region near the diameter along the advancing / retreating direction of the holding arm. the substrate processing apparatus according to any one of claims 1 to 7, characterized. Substrate transfer to a processing module that performs processing on a substrate by a substrate transfer means that is provided on a base that moves in a transfer area so as to freely move forward and backward, and that has a plurality of holding arms for holding the substrate. In the substrate transfer method of performing
On side of the uppermost holding arm of the substrate transfer means and fixed to the base so as to face the holding arm is provided with a plurality of first suction straightening vanes hole is formed, the rectifier on side of the plate, while via the first ventilation space provided fixed to the guide plate on the base so as to face the rectifying plate, the first vent between the guide plate and the rectifying plate A side wall surrounding the space is provided, and further, a gas nozzle for supplying gas toward the lower side of the rectifying plate is provided from a position on the front side of the holding arm in the advancing and retreating direction.
By generating a negative pressure in said first vent space, forming an airflow which is sucked into the first suction port through the first suction holes and the first ventilation space from the lower side of the integer Nagareban However, the substrate transfer method is characterized in that the substrate is transferred between the processing modules by holding the substrate on the holding arm while supplying gas from the gas nozzle . A storage medium storing a computer program used in a substrate processing apparatus,
The computer program includes a group of steps for carrying out the substrate carrying method according to claim 9 .

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