JP4595240B2 - High frequency module substrate device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention is mounted on various electronic devices such as personal computers, mobile phones, audio devices, and the like, and is preferably used for a high-frequency module device that has an information communication function, a storage function, and the like and constitutes a microminiature communication function module. The present invention relates to a module substrate device and a manufacturing method thereof.
[0002]
[Prior art]
  For example, various types of information such as music, voice, and images can be easily handled by personal computers, mobile computers, and the like in recent years as data is digitized. In addition, these information are band-compressed by audio codec technology and image codec technology, and an environment is being prepared in which digital communication and digital broadcasting are easily and efficiently distributed to various communication terminal devices. . For example, audio / video data (AV data) can be received outdoors by a mobile phone.
[0003]
  By the way, a data transmission / reception system has been used in various ways by proposing a suitable network system even in a small area such as a home. As a network system, for example, a narrow band wireless communication system of 5 GHz band proposed by IEEE802.1a, a wireless LAN system of 2.45 GHz band proposed by IEEE802.1b, orBluetoothVarious next-generation wireless systems such as short-range wireless communication systems, which are referred to, have been attracting attention. The transmission / reception system makes effective use of such a wireless network system to easily exchange various data in various places such as home and outdoors, without using a relay device, access to the Internet network, and transmission / reception of data. Is possible.
[0004]
  On the other hand, in the transmission / reception system, it is essential to realize a small, lightweight and portable communication terminal device having the above-described communication function. In a communication terminal device, since it is necessary to perform modulation / demodulation processing of an analog high-frequency signal in a transmission / reception unit, a high-frequency transmission / reception circuit using a superheterodyne method that is generally converted from a transmission / reception signal to an intermediate frequency is provided. .
[0005]
  The high-frequency transmission / reception circuit includes an antenna unit that has an antenna and a changeover switch and receives or transmits an information signal, and a transmission / reception switcher that switches between transmission and reception. The high-frequency transmission / reception circuit includes a reception circuit unit including a frequency conversion circuit unit and a demodulation circuit unit. The high-frequency transmission / reception circuit includes a transmission circuit unit including a power amplifier, a drive amplifier, a modulation circuit unit, and the like. The high-frequency transmission / reception circuit includes a reference frequency generation circuit unit that supplies a reference frequency to the reception circuit unit and the transmission circuit unit.
[0006]
  In such a high-frequency transmission / reception circuit, various filters, local oscillators (VCO), SAW (Surface acoustic wave) A large number of functional parts such as filters and passive parts such as inductors, resistors, capacitors and the like peculiar to high-frequency analog circuits such as matching circuits and bias circuits. In the high-frequency transmission / reception circuit, each circuit unit is made into an IC, but a filter inserted between the stages cannot be incorporated in the IC, and for this reason, a matching circuit is also required as an external device. Therefore, the high-frequency transmission / reception circuit is large in size as a whole, which has been a major obstacle to reducing the size and weight of communication terminal equipment.
[0007]
  On the other hand, a high frequency transmission / reception circuit based on a direct conversion system that transmits / receives an information signal without performing conversion to an intermediate frequency is also used for the communication terminal device. In such a high-frequency transmission / reception circuit, the information signal received by the antenna unit is supplied to the demodulation circuit unit via the transmission / reception switch, and direct baseband processing is performed. In a high-frequency transmission / reception circuit, an information signal generated by a source source is directly modulated to a predetermined frequency band without being converted to an intermediate frequency in a modulation circuit unit, and transmitted from an antenna unit via an amplifier and a transmission / reception switch. .
[0008]
  Since such a high-frequency transmission / reception circuit is configured to transmit and receive information signals by performing direct detection without converting intermediate frequencies, the number of components such as filters is reduced, and the overall configuration is simplified. A configuration close to one chip is expected. However, also in the high frequency transmission / reception circuit by this direct conversion method, it is necessary to cope with a filter or a matching circuit arranged in the subsequent stage. In addition, since the high-frequency transmission / reception circuit performs amplification once at the high-frequency stage, it is difficult to obtain a sufficient gain, and it is necessary to perform an amplification operation also in the baseband portion. Therefore, the high-frequency transmission / reception circuit requires a DC offset cancel circuit and an extra low-pass filter, and has a problem that the overall power consumption increases.
[0009]
[Problems to be solved by the invention]
  As described above, conventional high-frequency transmission / reception circuits cannot satisfy sufficient characteristics with respect to required specifications such as miniaturization and weight reduction of communication terminal equipment in both the superheterodyne method and the direct conversion method. . For this reason, various attempts have been made to make the high-frequency transmission / reception circuit into a module that is reduced in size with a simple configuration based on, for example, a Si-CMOS circuit. In other words, one of the attempts is to form a passive element with good characteristics on a Si substrate, build a filter circuit, a resonator, etc. on the LSI, and also integrate a logic LSI in the baseband portion, so-called This is a method of manufacturing a one-chip high-frequency transmission / reception module.
[0010]
  However, in such a Si substrate high-frequency transmission / reception module, it is extremely important how to form a high-performance inductor on the LSI. In a high-frequency transceiver module, for this purpose, for example, a Si substrate and SiO₂A large concave portion is formed corresponding to the inductor formation portion of the insulating layer, a first wiring layer is formed facing the concave portion, and a second wiring layer for closing the concave portion is formed to constitute the inductor portion. In addition, in the high-frequency transmission / reception module, the inductor portion is formed by taking measures such as raising a part of the wiring pattern from the substrate surface and floating it in the air as another measure. However, all of the high-frequency transmission / reception modules have a problem that the process of forming the inductor portion is extremely troublesome and the cost increases due to an increase in the number of processes.
[0011]
  On the other hand, in a one-chip high-frequency transmission / reception module, electrical interference between the Si substrate interposed between the high-frequency circuit part of the analog circuit and the baseband circuit part of the digital circuit becomes a serious problem. For high-frequency transceiver modules, for example, SiO on a Si substrate₂There have been proposed a layer in which a passive element formation layer is formed by a lithography technique after the layer is formed, and a film in which a passive element formation layer is formed on a glass substrate by a lithography technique.
[0012]
  In the Si substrate high-frequency transmission / reception module, passive elements such as an inductor part, a resistor part, or a capacitor part are formed in a multilayer by a thin film forming technique or a thick film forming technique together with a wiring pattern inside a passive element forming layer. In the high-frequency transmission / reception module, terminal portions connected to the internal wiring pattern through vias (relay through holes) or the like are formed on the passive element forming layer, and high-frequency ICs or LSIs are formed on these terminal portions by a flip chip mounting method or the like. A circuit element is directly mounted and configured. Such a high-frequency transmission / reception module can be mounted on a mother board or the like, for example, so that the high-frequency circuit unit and the baseband circuit unit can be divided to suppress electrical interference therebetween. However, the high-frequency transmission / reception module functions when a conductive Si substrate forms each passive element in the passive element formation layer, but there is a problem that it interferes with good high-frequency characteristics of each passive element.
[0013]
  The glass substrate high-frequency transmission / reception module solves the above-described problems caused by the Si substrate of the Si substrate high-frequency transmission / reception module by using a glass substrate as the base substrate. In the high-frequency transmission / reception module, passive elements such as an inductor portion, a resistor portion, or a capacitor portion are formed in a multilayer structure by a thin film forming technique or a thick film forming technique together with a wiring pattern inside a passive element forming layer. The high-frequency transmission / reception module has terminal parts connected to the internal wiring pattern via vias etc. on the passive element formation layer, and circuit elements such as high-frequency ICs and LSIs are directly mounted on these terminal parts by flip-chip mounting. Configured.
[0014]
  The high-frequency transmission / reception module uses a non-conductive glass substrate to suppress the capacitive coupling between the glass substrate and the passive element formation layer, thereby forming a passive element having good high-frequency characteristics in the passive element formation layer. It is possible. In order to mount the high-frequency transmission / reception module on, for example, a mother board or the like, a terminal pattern is formed on the surface of the passive element forming layer and connected to the mother board by a wire bonding method or the like. Therefore, the high frequency transmission / reception module requires a terminal pattern forming process and a wire bonding process.
[0015]
  In the one-chip high-frequency transmission / reception module, as described above, a highly accurate passive element forming layer is formed on a base substrate. When forming a passive element formation layer as a thin film on the base substrate, it is necessary to have heat resistance characteristics against an increase in surface temperature during sputtering, maintenance of the depth of focus during lithography, and contact alignment characteristics during masking. For this reason, the base substrate is required to have high precision flatness, and is required to have insulation, heat resistance, chemical resistance, and the like.
[0016]
  Si substrates and glass substrates have such characteristics, and can form low-cost and low-loss passive elements by a separate process from LSI. In addition, the Si substrate or the glass substrate is a passive element having a high dimensional accuracy as compared with a formation method such as a pattern by printing used in the conventional ceramic module technology or a wet etching method in which a wiring pattern is formed on the printed wiring substrate. It can be formed, and the element size can be reduced to about 1/100 of its area. Furthermore, the Si substrate and the glass substrate can increase the use limit frequency band of the passive element to 20 GHz.
[0017]
  However, such a high-frequency transmission / reception module needs to perform high-frequency signal system pattern formation and power supply / ground supply wiring or control system signal wiring through the wiring layer formed on the Si substrate or glass substrate as described above. In addition, electrical interference occurs between these wirings, and there is a problem of cost increase due to the multilayer wiring layer. The high-frequency transceiver module is packaged by being mounted on one main surface of the interposer substrate and sealed entirely with an insulating resin. The interposer substrate has a pattern wiring layer formed on the front and back main surfaces, and a large number of lands formed around the mounting area of the high-frequency transmission / reception module. In the state where the high frequency transmission / reception module is mounted on the interposer substrate, the package is configured to electrically connect the high frequency transmission / reception module and the land by wire bonding to perform power supply and signal transmission / reception. Therefore, in the high-frequency transmission / reception module, a wiring pattern for connecting these mounted components, connection terminals for wire bonding, and the like are formed on the surface layer on which the high-frequency IC and chip components are mounted.
[0018]
  Since the high frequency transmission / reception module is packaged through the interposer substrate as described above, there is a problem that the thickness and area of the package are increased. Further, the high frequency transmission / reception module has a problem of increasing the cost of the package. Furthermore, in the Si substrate or glass substrate high-frequency transmission / reception module, a shield cover is provided to cover the circuit elements such as the mounted high-frequency IC and LSI, but there is a problem that the size is increased due to the heat radiation structure generated from these circuit elements. is there. Furthermore, in the high frequency transmission / reception module, there is a problem that the cost is increased by using a relatively expensive Si substrate or glass substrate.
[0019]
  By the way, in a high-frequency transmission / reception module, when a carrier frequency is used in a band exceeding about 5 GHz, a transmission circuit (transmission line) or a coupling circuit is used for a circuit configuration using a so-called lumped constant element such as an inductor or a capacitor. A circuit configuration using a so-called distributed constant element such as a (Coupling line) or a stub can improve the characteristics. Also, in the high-frequency transmission / reception module, as the frequency band used increases, bandpass filters (BPF) and the like are configured by distributed constant elements as functional elements, and elements such as inductors and capacitors are choked or decoupled. It will be used as a limited functional part.
[0020]
  The applicant previously formed a thin film layer 52 on a relatively inexpensive organic base substrate 51 and planarized the surface of the thin film layer 52 as shown in FIG. 9 and FIG. A high-frequency module substrate device 50 is provided in which a BPF 53 of a precision distributed constant element and a spiral inductor 54 of a lumped constant element are formed into a film. The high-frequency module substrate device 50 is capable of forming a high-precision passive element and a high-density wiring layer on a base substrate, thereby achieving high functionality, thinning, miniaturization, and low cost.
[0021]
  By the way, in the high frequency module substrate device 50, in order to reduce the size, the BPF 53 is used.TheIt is effective to form on a base substrate 51 formed of a base material having a high dielectric constant such as a Si substrate or a glass substrate. That is, in the high-frequency module substrate device 50, by using the base substrate 51 having a high dielectric constant, different wavelength shortening occurs in the microstrip line (surface layer) and the strip line (inner layer), and the resonance used for the filter. It is possible to shorten the instrument length.
[0022]
  The wavelength is shortened by λ0 / √εw (λ0: wavelength in vacuum. Εw: effectiveratioDielectric constant. Dielectric constant determined by electromagnetic field distribution of air and dielectric. ) And λ0 / √εr (εr: relative dielectric constant of the base substrate) in the inner layer.
[0023]
  On the other hand, in the high-frequency module substrate device 50, since the spiral inductor 54 is configured in a dimensional design region sufficiently smaller than the wavelength by the lumped constant design, there is no influence of wavelength shortening. In the high-frequency module substrate device 50, since the spiral inductor 54 outputs a high Q value as an inductor, it is necessary to reduce parasitic capacitance due to coupling with the ground layer of the base substrate 51 and peripheral metal patterns.
[0024]
  In the high-frequency module substrate device 50, it is preferable to form the base substrate 51 with an organic substrate material having a dielectric constant as low as possible in order to reduce the parasitic capacitance of the spiral inductor 54 and improve the characteristics. Such a substrate material is also effective for lumped constant elements such as MIM capacitors (Metal Isolator Metal Capacitors) and thin film resistors because the unnecessary parasitic capacitance is similarly reduced.
[0025]
  The distributed constant element and the lumped constant element have characteristics that conflict with the dielectric constant specification of the base substrate 51 as described above. Therefore, in the high frequency module substrate device 50, the base substrate 51 is either a distributed constant element or a lumped constant element.OneTherefore, there is a problem in that it is necessary to make use of one of the characteristics and sacrifice the other characteristic, and the two characteristics cannot be achieved at the same time. The above-described high-frequency module substrate device 50 also has a problem to be solved for the problem caused by the mixture of distributed constant elements and lumped constant elements.
[0026]
  Accordingly, the present invention provides a high-frequency module that uses a substrate having a high dielectric constant characteristic as a base substrate and is mounted with a mixture of high-precision distributed constant elements and lumped constant elements to achieve downsizing and reduce parasitic capacitance. The present invention has been proposed for the purpose of providing a substrate device and a manufacturing method thereof.
[0027]
[Means for Solving the Problems]
  The high-frequency module substrate device according to the present invention that achieves the above-described object is as follows.A pair of core substrates that have high dielectric constant characteristics by using Si substrates or glass substrates and that are formed through the openings in each of the predetermined areas facing each other, and the openings are aligned and overlapped. A prepreg material having a lower dielectric constant than that of the core substrate that forms a filling layer having a low dielectric constant by joining the opposing principal surfaces of the core substrate and partially filling each of the openings. A thin film layer formed on the main surface opposite to the bonding main surface of one core substrate with a dielectric insulating material having a lower dielectric constant than that of the core substrate and having a flattened surface as a build-up formation surface, and on the thin film layer The lumped constant element formed in the area corresponding to the opening made into the low dielectric constant characteristic area of the layer thickness by the filler layer by the thin film technique or the thick film technique and the distributed constant formed in the other area It consists a high frequency circuit obtained by forming a multilayer wiring layer embedded with the child.
[0028]
  According to the high-frequency module substrate device according to the present invention configured as described above, a base substrate portion is formed by bonding a core substrate having a high dielectric constant characteristic, and a build-up formation flattened on the base substrate portion is formed. By configuring the surface, a wiring layer in which lumped constant elements and distributed constant elements are formed with high accuracy by thin film technology or thick film technology is formed on the build-up formation surface. According to the high frequency module substrate device, the lumped elementIn the corresponding area of the opening, which is made the low dielectric constant characteristic area of the layer thickness by the filler layerFormationTheTherefore, suppression of characteristic deterioration due to parasitic capacitance is achieved.. According to the high frequency module substrate device,Distributed constant elementFormed in other high dielectric constant characteristics regionsTherefore, it is possible to reduce the size by the wavelength shortening effect of the high dielectric constant base substrate portion.
[0029]
  Furthermore, the manufacturing method of the high frequency module substrate device according to the present invention that achieves the above-described object is as follows.A core substrate forming step, a core substrate bonding step, a thin film layer forming step, and a high frequency circuit portion forming step. In the core substrate forming step, openings are respectively formed in predetermined opposed regions with respect to a pair of core substrates having high dielectric constant characteristics by using a Si substrate or a glass substrate as a material. In the core substrate bonding step, the opposing main surfaces of a pair of core substrates that are aligned and overlapped with each other are bonded with a prepreg material having a lower dielectric constant than the core substrate, and a part of the prepreg material is By filling each of the openings, a filling layer having a low dielectric constant characteristic region having a layer thickness is formed. In the thin film layer forming process, at least one core substrate is formed with a dielectric insulating material having a dielectric constant lower than that of the core substrate on the main surface facing the bonding main surface, and the surface is flattened to form a build-up formation surface A thin film layer is formed. The high-frequency circuit section forming process consists of alternately laminating wiring layers or wiring layers and insulating layers on the build-up forming surface of the thin film layer, and using a thin film technology or a thick film technology to reduce the thickness of the dielectric layer using a filler layer. A high-frequency circuit unit composed of a multilayer wiring layer in which a lumped constant element formed in a region corresponding to the opening defined as a rate characteristic region and a distributed constant element formed in another region are mixedly formed is formed.
[0030]
  According to the method of manufacturing a high-frequency module substrate device according to the present invention having the above steps, a pair of core substrates having high dielectric constant characteristics is obtained.By prepreg material with low dielectric constant characteristicsJoinedBecomeA wiring layer in which lumped constant elements and distributed constant elements are formed with high accuracy by thin film technology or thick film technology is formed on the buildup formation surface of the base substrate portion. According to the method for manufacturing a high-frequency module substrate device,In the corresponding area of the opening, which is made the low dielectric constant characteristic area of the layer thickness by the thin filler layerBy forming a lumped element, it is possible to suppress characteristic deterioration due to parasitic capacitance,On the high dielectric constant characteristic regionForming distributed constant elementsInAccordingly, it is possible to manufacture a high-frequency module substrate device that is reduced in size due to the wavelength shortening effect of the source substrate. Therefore, according to the method for manufacturing a high-frequency module substrate device, downsizing and improvement in characteristics can be achieved, and for example, a small-sized and high-performance high-frequency module device can be manufactured.
[0031]
DETAILED DESCRIPTION OF THE INVENTION
  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The high-frequency module substrate device 1 shown in FIG. 1 as an embodiment is mounted on various electronic devices such as a personal computer, a cellular phone, or an audio device, and has an information communication function used in a band where the carrier frequency exceeds about 5 GHz. An ultra-small communication function module is configured with a storage function and the like. Although not described in detail, the high-frequency module substrate device 1 transmits and receives information signals without performing a superheterodyne high-frequency transmission / reception circuit unit that converts a transmission / reception signal to an intermediate frequency, or without performing conversion to an intermediate frequency. A high-frequency transmission / reception circuit unit or the like based on the direct conversion method is formed.
[0032]
  The high-frequency module substrate device 1 is mounted on one main surface of an interposer substrate and packaged by sealing the whole with an insulating resin such as an epoxy resin. The high-frequency module substrate device 1 is provided with appropriate pattern wirings and connection terminal portions on the front and back main surfaces in order to mount a peripheral circuit IC or the like of a high-frequency transmission / reception circuit unit or to be mounted on an interposer substrate.
[0033]
  The high-frequency module substrate device 1 includes a base substrate portion 2 manufactured by a conventional general multilayer printed circuit board manufacturing method. The base substrate portion 2 includes a pair of core substrates 3 and 4 and a prepreg material 5 that joins the main surfaces 3a and 4a facing each other. The high-frequency module substrate device 1 is flattened on the main surface of the base substrate portion 2 through a thin film forming process as will be described later.Dielectric insulationLayers 6 and 7 are formed, and one of the layers is formed by a thin film process or a thick film process.Dielectric insulationA high-frequency circuit section 8 having the above-described function is formed on the layer 6.
[0034]
  In this high frequency circuit section 8, lumped constant elements and distributed constant elements are mixedly formed as will be described in detail later. The high-frequency module substrate device 1 is configured as a flat surface, and the high-frequency circuit unit 8 is formed.Dielectric insulationThe surface of the layer 6 constitutes the buildup forming surface 9. In the high-frequency module substrate device 1, the high-frequency circuit unit 8 is replaced with a transmission line (transmission line) or a coupling line (based on a so-called lumped constant element using an inductor, a capacitor, or the like based on the above-described use frequency band. It is based on the so-called distributed constant design based on the Coupling Line). In the high-frequency module substrate device 1, as will be described in detail later, the characteristics of each lumped constant element are improved by the configuration of the base substrate portion 2, although it is based on distributed constant design.
[0035]
  For the core substrates 3 and 4, a substrate material having a high dielectric constant characteristic such as a Si substrate or a glass substrate generally used for a conventional multilayer printed wiring board is used as a base material. As shown in FIG. 3, the core substrates 3 and 4 have a sufficient mechanical strength when the thickness t is 200 μm or more. On the core substrates 3 and 4, although not shown, appropriate wiring patterns such as a ground and a power supply circuit and connection lands are formed.
[0036]
  In the core substrates 3 and 4, openings 10 and 11 are formed in predetermined areas facing each other as shown in FIG. 4 by, for example, machining or laser cutting. Each of the openings 10 and 11 constitutes a mounting region for the lumped constant element in the high-frequency circuit unit 8 as described later. Of course, the lumped elements may be provided on the core substrates 3 and 4 in a distributed manner so as to form a plurality of openings 10 and 11 as long as the mechanical strength is not impaired. It is.
[0037]
  The core substrates 3 and 4 are bonded by prepreg materials 5a and 5b filled between the main surfaces 3a and 4a as shown in FIG. 5 with the main surfaces 3a and 4a facing each other as bonding surfaces. After the prepreg materials 5a and 5b are applied to the main surfaces 3a and 4a, respectively, the core substrates 3 and 4 are overlapped with the main surfaces 3a and 4a as shown by arrows in the figure. In this case, the core substrates 3 and 4 are overlapped so that the above-described openings 10 and 11 coincide with each other.
[0038]
  The prepreg material 5 is applied to the main surfaces 3a and 4a of the core substrates 3 and 4 using, for example, an epoxy adhesive resin, an acrylic adhesive resin or an appropriate adhesive having a low dielectric constant characteristic. The prepreg material 5 includes core substrates 3 and 4 that are superimposed as shown by arrows in FIG.Main faceThe base substrate portion 2 is configured by curing by applying pressure treatment in a heated state from the 3b and 4b sides, and integrating the core substrates 3 and 4 together. A part of the prepreg material 5 is filled in the openings 10 and 11 by pressing the core substrates 3 and 4. The coating amount of the prepreg material 5 is appropriately controlled so as not to overflow from the main surfaces 3b, 4b of the core substrates 3, 4 through the openings 10, 11.
[0039]
  In the base substrate portion 2 configured as described above, a part of the prepreg material 5 as an adhesive is filled in the openings 10 and 11 in a state where the core substrates 3 and 4 having high dielectric constant characteristics are joined. Thus, a prepreg material layer 12 having a low dielectric constant characteristic is formed. In the base substrate portion 2, the core substrates 3 and 4 are formed on the main surfaces 3b and 4b with a high degree of flatness. However, as described above, the openings 10 and 11 are formed and the openings 10 and 11 are formed. The prepreg material layer 12 is formed in 11 so that the structure is uneven.
[0040]
  As shown in FIG. 7, the base substrate portion 2 has main surfaces 3b and 4b of the core substrates 3 and 4 respectively.Dielectric insulationDepending on the materialDielectric insulationThe layers 6a and 6b are formed as a thin film.Dielectric insulationFor the material, a base material having low dielectric constant characteristics and excellent heat resistance and chemical resistance is used. For example, benzocyclobutene (B), polyimide, polynorbornene (PNB), liquid crystal polymer (LCP) or epoxy Resin, acrylic resin, or the like is used.
[0041]
  Dielectric insulationLayers 6a and 6b areDielectric insulationThe material can be applied onto the main surfaces 3b and 4b of the core substrates 3 and 4 by a spin coat method, curtain coat method, roll coat method, dip coat method or the like that can be applied while maintaining coating uniformity and thickness controllability.DoThus, a film is formed.Dielectric insulationThe layers 6a and 6b are formed with a thickness u that is very thin compared to the thickness t of the core substrates 3 and 4, specifically, a film thickness smaller than about 20 μm.Dielectric insulationThe layers 6a and 6b are formed on the planarized surface by adopting the above-described coating method.Be.
[0042]
  As shown in FIG.Dielectric insulationPart of the material is filled in the openings 10 and 11, and the corresponding portion of the prepreg material layer 12 that is a recess with respect to the main surfaces 3b and 4b of the core substrates 3 and 4 is also flattened. In this way, the base substrate portion 2 has a low dielectric constant characteristic prepreg material layer 12 having a sufficient thickness formed on a part of the core substrates 3 and 4 having high dielectric constant characteristics.
[0043]
  The base substrate unit 2 has been described above.Dielectric insulationUsing the layer 6a as the buildup formation surface 9, the wiring layer and the insulating layer are alternately laminated on the buildup formation surface 9 to form the high frequency circuit portion 8 composed of a multilayer wiring layer. As described above, the high-frequency circuit section 8 is formed by mixing lumped constant elements and distributed constant elements, and a part of the first wiring layer 13 is shown in FIG.
[0044]
  As shown in FIG. 8, the first wiring layer 13 is formed with a wiring pattern in which a spiral inductor 14 as a lumped constant element and a bandpass filter 15 as a distributed constant element are mixed using a thin film forming technique or a thick film forming technique. ing. The first wiring layer 13 can be processed with higher accuracy by forming these elements by a thin film forming technique or a thick film forming technique as compared with a printing technique or a wet etching method that is generally performed. In addition, the lumped constant element and the distributed constant element are formed with high accuracy and reduced size.
[0045]
  The spiral inductor 14 is, for example,Dielectric insulationOn the layer 6a, it is formed by a thick film forming technique in which a sputtering process, a patterning process, an electrolytic plating process, and the like are performed. That is, thick film formation technologyDielectric insulationA sputter layer composed of a nickel layer and a copper layer is formed on the layer 6a, and the sputter layer is subjected to photolithographic processing to be subjected to predetermined patterning. In the thick film forming technique, an electrolytic plating process for selectively performing copper plating having a thickness of about several μm on a predetermined patterned sputter layer is performed, and the spiral resist 14 is formed by removing the plating resist. The The spiral inductor 14 has a problem of a series resistance value, but is formed with a sufficient thickness by using the above-described thick film forming technique, and a reduction in loss is suppressed.
[0046]
  As described above, the spiral inductor 14 is formed on the prepreg material layer 12 having the low dielectric constant characteristics of the buildup forming surface 9. Therefore, in the high-frequency module substrate device 1, the spiral inductor 14 can reduce the parasitic capacitance by coupling with the core substrates 3 and 4 having high dielectric constant characteristics and the ground layer and the surrounding metal pattern formed thereon. Therefore, the characteristics of outputting a high Q value can be improved.
[0047]
  In the high-frequency module substrate device 1, not only the spiral inductor 14 but also other lumped constant elements are formed on the first wiring layer 13 corresponding to the prepreg material layer 12 or each wiring layer formed on the upper layer. The other lumped constant elements are passive elements such as capacitors and resistance elements, and are formed by a thin film formation technique or a thick film formation technique in the same manner as the spiral inductor 14.
[0048]
  As shown in FIG. 8, the high-frequency module substrate device 1 uses a thin film formation technique or a thick film formation technique on the first wiring layer 13 located in a region excluding the corresponding region of the prepreg material layer 12. A bandpass filter 15 is formed. The bandpass filter 15Dielectric insulationFormed on layer 6, but as described aboveDielectric insulationThe thickness of layer 6 iscoreHigh dielectric constant characteristics because it is extremely thin compared to the thickness of the substrates 3 and 4coreThe wavelength shortening effect of the substrates 3 and 4 is received. Therefore, the bandpass filter 15 iscoreSince different wavelength shortening occurs in the surface layer and the inner layer of the substrates 3 and 4, the size can be reduced.
[0049]
  The high-frequency module substrate device 1 includes not only the bandpass filter 15 but also other distributed constants in the first wiring layer 13 located in the region excluding the corresponding region of the prepreg material layer 12 or each wiring layer formed in the upper layer. Elements are also formed. Other distributed constant elements are, for example, active elements such as antenna elements, baluns, couplers, transmission lines and stub circuit elements, and are formed by thin film formation techniques and thick film formation techniques in the same manner as the spiral inductor 14 and the bandpass filter 15. It is formed.
[0050]
  In the high-frequency module substrate device 1, a large number of via holes communicating with the core substrates 3 and 4 are formed in the first wiring layer 13 described above by drilling or laser processing (not shown). Each via hole is subjected to a plating process, a conductive paste embedding process, and the like, and electrical connection between the wiring patterns formed in the core substrates 3 and 4 and the first wiring layer 13 is performed. The high-frequency module substrate device 1 includes a high-frequency module device 30 shown in FIG.
[0051]
  In the high-frequency module substrate device 1, as shown in FIG. 2, a second wiring layer 18 having an appropriate wiring pattern 17 is formed via a second dielectric insulating layer 16 formed and formed on the first wiring layer 13. Is done. The second wiring layer 18 is also formed by mixing appropriate lumped constant elements and distributed constant elements in the same manner as the first wiring layer 13 although details are omitted. The second wiring layer 18 has a number of via holes 19 connected to the first wiring layer 13. The high-frequency module substrate device 1 has a multilayer structure on the base substrate portion 2 by the first wiring layer 13, the second wiring layer 18, the third wiring layer 21, the second dielectric insulating layer 16, the third dielectric insulating layer 20, and the like. The high frequency circuit unit 8 is configured.
[0052]
  In the high-frequency module substrate device 1, the third dielectric insulating layer 20 is formed on the second wiring layer 18 described above, and the third wiring layer 21 in which lands are appropriately arranged on the third dielectric insulating layer 20 is formed. It is formed. In the high frequency module substrate device 1, the high frequency IC 23 is mounted on the third wiring layer by, for example, a flip chip method via the flip chip 22. In the high-frequency module substrate device 1, although not shown, an appropriate wiring layer is also formed on the dielectric insulating layer 7 on the core substrate 4 side, and is mounted on the mother substrate as a so-called one-chip component via this wiring layer. The high frequency module device 30 is configured.
[0053]
  In the high-frequency module substrate device 1, the spiral inductor 14 and the bandpass filter 15 are formed in the predetermined region in the first wiring layer 13 as described above, but the configuration is limited to this. Of course, it is not something. In the high-frequency module substrate device 1, for example, lumped constant elements such as thin film capacitors and resistors are formed in the first wiring layer 13 in a region corresponding to the prepreg material layer 12, and the first wiring layer 13 or the second wiring is formed. An inductor element may be formed in the layer 18.
[0054]
  In the high-frequency module substrate device 1, a prepreg material layer 12 having a low dielectric constant characteristic is formed on a part of the core substrates 3 and 4 having a high dielectric constant characteristic to form a lumped element forming region. Alternatively, a distributed constant element forming region may be formed by forming a prepreg material layer 12 having a high dielectric constant characteristic on a part of the core substrates 3 and 4 having a dielectric constant characteristic. In the high frequency module substrate device 1, the pair of core substrates 3 and 4 are joined by the prepreg material 5 to form the base substrate portion 2, but may be composed of, for example, a relatively thick core substrate.
[0055]
【The invention's effect】
  As described above in detail, according to the present invention, a portion having a high dielectric constant characteristic and a low dielectric constant characteristic are obtained by filling an insulating material having a low dielectric constant characteristic in an opening formed in a substrate having a high dielectric constant characteristic. A base substrate portion having a portion, a lumped constant element corresponding to a low dielectric constant portion and a distributed constant element corresponding to a high dielectric constant portion are formed. Due to the shortening effect, the distributed constant element can be reduced in size and the parasitic capacitance of the lumped constant element formed in the low dielectric constant characteristic portion can be reduced to improve the characteristics. Therefore, according to the present invention, it is possible to realize a small and high-performance high-frequency module substrate device in which distributed constant elements and lumped constant elements are mixed.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of an essential part of a high-frequency module substrate device according to the present invention.
FIG. 2 is a longitudinal sectional view of a main part of a high frequency module device including the high frequency module substrate device.
FIG. 3 is a longitudinal sectional view of a main part of a core substrate.
FIG. 4 is a longitudinal sectional view of a main part of a core substrate in which an opening is formed.
FIG. 5 is a longitudinal sectional view of an essential part of a pair of core substrates coated with a prepreg material.
FIG. 6 is a longitudinal sectional view of a main part of a base substrate portion formed by bonding a pair of core substrates.
[Fig. 7]Dielectric insulationIt is a principal part longitudinal cross-sectional view of the base substrate part in which the layer was formed.
FIG. 8 is a longitudinal sectional view of a main part of a base substrate portion on which a first wiring layer is formed.
FIG. 9 is a perspective view of a main part of a high-frequency module substrate device in which distributed constant elements and lumped constant elements are mixed.
FIG. 10 is a plan view of an essential part of the high frequency module substrate device.
[Explanation of symbols]
  1 high frequency module substrate device, 2 base substrate portion, 3, 4 core substrate, 5 prepreg material, 6, 7Dielectric insulationLayer, 8 high-frequency circuit section, 9 build-up forming surface, 10, 11 opening, 12 prepreg material layer, 13 first wiring layer, 14 spiral inductor, 15 band-pass filter

Claims (2)

The Si substrate or a glass substrate and having a high dielectric constant characteristics by a material, and a pair of core substrates respectively formed through the openings on opposite predetermined area,
The opposed main surfaces of the pair of core substrates overlaid by aligning the openings are joined together, and a part of the openings are filled into the openings to form a filling layer having a low dielectric constant characteristic. A prepreg material having a dielectric constant lower than that of the core substrate ,
Together they are formed by a dielectric insulating material with low dielectric constant properties than the core substrate in bonding the main surface opposite to the main surface of at least one of the core substrate, a thin film layer configured as a build-up forming surface to flatten the surface When,
On the thin film layer, a lumped constant element formed in a region corresponding to the opening portion having a low dielectric constant characteristic region having a layer thickness by the filler layer by thin film technology or thick film technology, and a distributed constant formed in other regions. A high-frequency circuit unit formed with a multilayer wiring layer in which elements are mixedly mounted;
A high-frequency module substrate device comprising: Each core board shape formed forming an opening to the pair of the core substrate, on opposite predetermined area having a high dielectric constant characteristic by a Si substrate or a glass substrate material,
The opposed main surfaces of the pair of core substrates, which are aligned and overlapped with each other, are joined by a prepreg material having a lower dielectric constant than that of the core substrate , and a part of the prepreg material is formed in each of the openings. A core substrate bonding step for forming a filling layer of a low dielectric constant characteristic region of a layer thickness by being filled in each part ;
A thin film layer that is formed of a dielectric insulating material having a lower dielectric constant than that of the core substrate on a main surface opposite to the bonding main surface of at least one of the core substrates, and forms a build-up forming surface by flattening the surface Forming a thin film layer, and
To the buildup surface on the thin film layer, with the wiring layer or the wiring layer and the insulating layer are laminated alternately, and low dielectric constant region of the layer thickness by the filler layer by thin film technology or thick film technology A high-frequency module comprising: a high- frequency circuit part forming step for forming a high-frequency circuit part composed of a multilayer wiring layer in which a lumped constant element formed in a corresponding region of the opening and a distributed constant element formed in another area are mixedly mounted A method for manufacturing a substrate device.

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