JPH06132416A - High-frequency integrated circuit device - Google Patents

Abstract

PURPOSE:To reduce an MIC substrate small-sized, to decrease the size of a circuit as a whole and to reduce the production cost of a circuit device by a method wherein another MIC substrate whose dielectric constant is high is stacked on the MIC substrate and a circuit pattern which requires a large layout area is formed on the MIC substrate whose permittivity is high. CONSTITUTION:A substrate 14 whose dielectric constant is higher than that of a substrate 13 and in which an open stub 31 has been formed on the surface is stacked on the substrate 13 in which an MIC pattern 21 has been formed. When the stub 31 which requires a comparatively large layout area is formed on the substrate 14 whose wavelength shortening coefficient is large, the stub whose impedance is the same as a long line length can be realized by a short line length. When the substrate 14 is mounted on the surface of the main substrate 13, the size of the main substrate 13 can be reduced and a device can be made small-sized as a whole.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency integrated circuit device (MI) for transmitting high frequency signals such as a high frequency amplifier and an oscillator.
The present invention relates to C), and particularly to miniaturization of the substrate.

[0002]

2. Description of the Related Art FIG. 5 shows an M having a conventional high-frequency transmission line.
The structure of the IC substrate is shown, and in the figure, 1 is, for example, GaA.
a circuit board made of a material such as s having a predetermined dielectric constant, 2
Is an MIC pattern formed by evaporating a metal such as Al or gold on the substrate 1, and 3 is an open stub connected to the MIC pattern 2.

In the high frequency transmission line, impedance matching is required to suppress reflection of signals at the input / output ends of the high frequency circuit. Therefore, a matching circuit such as an open stub is provided in the transmission line. Further, one of the parameters that influences the magnitude of impedance is the dielectric constant of the substrate. However, when patterning a relatively large stub or the like on the same substrate, a large layout area is required, which is disadvantageous for downsizing the device. Becomes

FIG. 6 shows the structure of another conventional high-frequency integrated circuit device. In FIG. 6, 11 is a MIC substrate having a high dielectric constant, and 12 is a low dielectric constant arranged so as to surround the MIC substrate 11. The MIC substrate is a MIC substrate, and by forming a stub or the like on the MIC substrate 11 having a high dielectric constant, the wavelength shortening rate can be increased to shorten the line length, and the entire device can be miniaturized. Reference numeral 4 is a wire that connects circuits between the substrates.

[0005]

The conventional high-frequency integrated circuit device is configured as described above, and when a single substrate is used, a large layout area is required when forming stubs or the like, In addition, when substrates with different permittivities are used in combination, it is difficult to process substrates with the same permittivity into complicated shapes, and in terms of processing costs, they are divided into rectangular shapes for use. There is a problem in that there is a limitation in the arrangement of the substrates, and in some cases, a problem arises in that long wires must be used to connect the substrates.

The present invention has been made in order to solve the above-mentioned problems, and it is possible to downsize the substrate and
An object of the present invention is to obtain a high-frequency integrated circuit device which can improve the degree of freedom in arranging substrates without increasing the cost.

[0007]

In a high frequency integrated circuit device according to the present invention, another MIC substrate having a higher dielectric constant than this is laminated on one MIC substrate, and the MIC substrate having a high dielectric constant. A circuit pattern that requires a large layout area is formed.

Further, a metal vapor deposition portion connected to the metallized layer on the back surface of the substrate is provided on the lower surface of the MIC substrate having a low dielectric constant, and another MIC having a high dielectric constant is provided through the metal vapor deposition portion.
The substrate is laminated.

In addition, there is provided a metal layer having good thermal conductivity, which is formed by filling a through hole formed for connecting the metal deposition portion on the lower surface of the MIC substrate and the metallized layer on the back surface of the substrate. It is a thing.

[0010]

In the present invention, by forming a circuit pattern requiring a large layout area on a MIC substrate having a high dielectric constant, it is possible to realize a circuit pattern having an equivalent function with a small layout area. Is laminated on a MIC substrate having a normal dielectric constant,
The size of the entire circuit can be reduced.

Further, when the above two MIC substrates are laminated, a metal vapor deposition section connected to the metallization layer on the back surface of the substrate is provided on the lower MIC substrate surface, and two MIC substrates are provided through the metal vapor deposition section. Since the substrates are laminated, the two substrates can be electrically separated from each other.

Further, since the through hole formed for connecting the metal vapor deposition portion on the lower surface of the MIC substrate and the metallized layer on the rear surface of the substrate is filled with a metal having good thermal conductivity, The heat dissipation of the stacked MIC substrates is improved.

[0013]

EXAMPLES Example 1. 1 (a) and 1 (b) respectively show an exploded perspective view of a high frequency integrated circuit device according to a first embodiment of the present invention and a back surface of each substrate, in which 13 is a predetermined pattern necessary for forming a high frequency circuit. Is a main circuit board (first circuit board) having a dielectric constant of 1. A metal such as gold is vapor-deposited on the surface to form the MIC pattern 21, and a back surface metallization layer 130 is formed on the entire back surface. ing. Reference numeral 14 is a sub-board (second circuit board) having a higher dielectric constant than the main board 13, an open stub 31 is formed on the front surface thereof, and a metallized layer 140 is formed on the entire back surface thereof. There is. Further, 5 is the sub-board 1 of the main board 13.
4 is a metal vapor deposition portion formed in the region where the metallization layer 4 is mounted, and the metallization layer 1 on the back surface of the main substrate 13 and the sub-substrate 14
This is for facilitating joining with 40 by soldering or the like.
When the sub-board 14 is mounted on the main board 13,
As shown in FIG. 1 (c), it is necessary to electrically connect the open stub 31 and the MIC pattern 21 by using a wire 9 or a ribbon.

Next, the operation and effect will be described. The sub-board 14 having a high dielectric constant has a large wavelength shortening rate, and a stub 31 having a large sibe which requires a relatively large layout area is formed on the sub-board 14 to provide a short line length and the same impedance as a long line length. It is possible to realize a stub having such a sub-board 14 and the main board 21.
By mounting it on the surface, the size of the main board 13 can be reduced, and thus the overall size of the device can be reduced.

Further, compared with the method shown in FIG. 6 in which a substrate having a high dielectric constant is centered and another substrate having a low dielectric constant is arranged around the substrate, the required number of substrates can be reduced and the cost can be reduced. It will be cheaper.

Further, the mounting position of the sub-board 14 is
The layout of the circuit formed on the surface of the main board 13 can be changed relatively freely, and the degree of freedom in the arrangement position of the board 14 is large as compared with the conventional example of FIG.

In the structure of this embodiment, the sub-board 1
Since the effective thickness of No. 4 is the sum of the thicknesses of the lower main board 13, it is necessary to make the line width of the stub 31 wider by that amount, and the line length also has a dielectric constant of the main board 13. Since it is affected by, it is necessary to design considering it.

Example 2. Next, a high frequency integrated circuit device according to a second embodiment of the present invention will be described with reference to FIG. Figure 2
In FIG. 2A, reference numeral 6 denotes a metal deposition portion for joining the main substrate 13 and the sub-substrate 14, and as shown in FIG. 2B, the metallization layer 130 on the back surface from the surface of the main substrate 13 to the side surface thereof. It is formed continuously up to.

By doing so, the back surface metallization layer 130 formed on the back surface of the main substrate 13 and the metallization layer 140 on the back surface of the sub substrate 14 can be made to have the same potential, and the sub substrate 14 is mounted on the main substrate 13. When I did
The two substrates can be electrically separated from each other, and the sub substrate 14
The design for forming the open stub 31 can be easily performed.

Example 3. Next, a high frequency integrated circuit device according to a third embodiment of the present invention will be described with reference to FIG. As shown in the figure, in this embodiment, in order to electrically connect the metallized layer 130 on the back surface of the main substrate 13 and the metal deposition portion 5 on the front surface of the substrate 13, through holes 7 are formed in the main substrate 13.
Is formed and a metal is vapor-deposited on the inner surface of the through hole 7. By doing so, the same effect as that of the second embodiment can be obtained.

Example 4. Next, a high frequency integrated circuit device according to a fourth embodiment of the present invention will be described with reference to FIG. Figure 4
FIG. 4 is a partially enlarged view of a metal vapor deposition portion 5 formed on the surface of the main substrate 13 constituting the high frequency integrated circuit device according to the present embodiment for joining sub substrates, and as shown in the drawing, inside the through hole 7. Is filled with a metal 8 such as gold having good thermal conductivity. By doing so, the sub-board 14
When the heat-generating element is included in, the heat can be effectively radiated.

In each of the above embodiments, the open stub 31 is described as being formed on the sub-board 14 having a high dielectric constant. However, in addition to the open stub, an inductor or the like requires a relatively large layout area. As long as they are the same, the same effect can be obtained.

[0023]

As described above, according to the high frequency integrated circuit device of the present invention, by forming a circuit pattern requiring a large layout area on the MIC substrate having a high dielectric constant, the same layout can be achieved with a small layout area. By realizing a circuit pattern having the above function and stacking this substrate on an MIC substrate having a normal dielectric constant, it is possible to obtain a MIC circuit in which substrates having different dielectric constants are combined with a small number of substrates. Can be miniaturized, and eventually the size of the entire circuit can be reduced and the manufacturing cost can be reduced.
Further, since the degree of freedom of the arrangement pattern of each substrate is improved, there is an effect that the assembly can be simplified.

When laminating the two MIC substrates, a metal vapor deposition section connected to the metallization layer on the back surface of the MIC substrate is provided on the lower surface of the MIC substrate, and two MIC substrates are connected via the metal vapor deposition section. By stacking the layers, the two substrates can be electrically separated from each other, and the circuit can be easily designed without considering the electrical influence between the substrates.

Further, since the through hole formed for connecting the metal deposition portion on the lower surface of the MIC substrate and the metallized layer on the rear surface of the substrate is filled with a metal having good thermal conductivity, There is an effect that the heat dissipation of the stacked MIC substrates can be improved.

[Brief description of drawings]

FIG. 1 is an exploded perspective view of a high-frequency integrated circuit device according to a first embodiment of the present invention, a backside plan view of each board, and a perspective view at the time of mounting.

FIG. 2 is an exploded perspective view of a high frequency integrated circuit device according to a second embodiment of the present invention and a backside plan view of a main substrate.

FIG. 3 is an exploded perspective view of a high frequency integrated circuit device according to a third embodiment of the present invention and a backside plan view of a main substrate.

FIG. 4 is a partially enlarged view of a back surface of a main substrate of a high frequency integrated circuit device according to a fourth embodiment of the present invention.

FIG. 5 is a plan view of a conventional high frequency integrated circuit device including a single substrate.

FIG. 6 is a plan view of a conventional high frequency integrated circuit device including a plurality of substrates.

[Explanation of symbols]

 5 Metal Vapor Deposition Section 6 Metal Vapor Deposition Section 7 Through Hole 8 Metal with High Thermal Conductivity 9 Wire 13 Main Substrate 130 Back Metallization Layer 14 Sub Substrate 140 Back Metallization Layer 21 MIC Pattern 31 Open Stub

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[Procedure amendment]

[Submission date] December 28, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be amended] Claims

[Correction method] Change

[Correction content]

[Claims]

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction content]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency integrated circuit device (MI) for transmitting high frequency signals such as a high frequency amplifier and an oscillator.
The present invention relates to C), and particularly to miniaturization and cost reduction of the substrate.

[Procedure 3]

[Document name to be amended] Statement

[Name of item to be corrected] 0002

[Correction method] Change

[Correction content]

[0002]

2. Description of the Related Art FIG. 5 shows an M having a conventional high-frequency transmission line.
The structure of the IC substrate is shown. In the figure, 1 is aluminum , for example.
A circuit board having a predetermined dielectric constant of a material such as Na, 2
Is an MIC pattern formed by depositing a metal such as silver or gold on the substrate 1, and 3 is an open stub connected to the MIC pattern 2.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction content]

[0007]

A high frequency integrated circuit device according to the present invention is provided on one MIC substrate and is different from that.
MIC substrates are laminated .

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction content]

Further, below the M IC substrate surface, the metal deposition portion connected to the substrate backside metallization layer is provided, in which so as to laminate the other MIC substrate through the metal deposition portion.

[Procedure correction 6]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction content]

[0010]

In the present invention, the dielectric constant of the MIC substrate is thick.
When changing only a part of the
It can be patterned with no number of substrates .

[Procedure Amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction content]

Example 2. Next, according to the second embodiment of the present invention.
A high frequency integrated circuit device according to the present invention will be described with reference to FIG. Figure 2
In (a), 6 indicates the main board 13 and the sub-board 14.
It is a metal deposition part for joining, as shown in Fig. 2 (b).
Then, from the front surface of the main substrate 13 to the side surface,
The rise layer 130 is continuously formed.

[Procedure Amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction content]

By doing so, the back surface of the main substrate 13
Backside metallization layer 130 and the backside of sub-substrate 14 formed on
It is possible to make the potential of the surface metallized layer 140 the same.
When the sub-board 14 is mounted on the main board 13,
The two substrates can be electrically separated from each other, and the sub substrate 14
Easy design when forming the open stub 31
be able to.

[Procedure Amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0019

[Correction method] Change

[Correction content]

Example 3. Next, according to a third embodiment of the present invention,
A high frequency integrated circuit device according to the present invention will be described with reference to FIG. In the figure
In this embodiment, as shown in FIG.
The rise layer 130 and the metal vapor deposition portion 5 on the surface of the substrate 13 are electrically charged.
Through the through holes 7 in the main board 13 for making a physical connection.
And the metal is deposited on the inner surface of the through hole 7.
It was realized by and. By doing this
It is possible to obtain the same effect as that of the second embodiment.

[Procedure Amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

[Correction content]

Example 4. Next, according to a fourth embodiment of the present invention,
A high frequency integrated circuit device according to the present invention will be described with reference to FIG. Figure 4
Is a main component of the high-frequency integrated circuit device according to the present embodiment.
Formed on the surface of the substrate 13 to join the sub-substrates
It is a partially enlarged view of the metal vapor deposition part 5, and as shown in the figure,
The inside of the through hole 7 is made of metal 8 such as gold having good thermal conductivity.
It is filled. By doing so, the sub-board 14
If a heat-generating element is included in the
Can dissipate heat.

[Procedure Amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction content]

In each of the above embodiments, a sub-dielectric having a high dielectric constant is used.
The open stub 31 is formed on the substrate 14.
Although explained as an example, inductors other than open stubs
Etc. requires a relatively large layout area
As long as they are the same, the same effect can be obtained.

[Procedure Amendment 12]

[Document name to be amended] Statement

[Name of item to be corrected] 0022

[Correction method] Change

[Correction content]

[0022]

As described above, the high frequency collector according to the present invention is
According to the integrated circuit device, the MIC substrate having a high dielectric constant is large.
A circuit pattern that requires layout area can be formed.
And has the same function with a small layout area.
This circuit board has a normal dielectric constant.
By stacking on the MIC substrate
To obtain an MIC circuit that combines substrates with different dielectric constants.
It is possible to reduce the size of the MIC board, and thus the size of the entire circuit.
It is possible to reduce the size and manufacturing cost,
In addition, the flexibility of the layout pattern of each board is improved,
This has the effect of simplifying the assembly.

[Procedure Amendment 13]

[Document name to be amended] Statement

[Name of item to be corrected] 0023

[Correction method] Change

[Correction content]

When laminating the above two MIC substrates,
Then, on the lower MIC substrate surface, the metallization of the substrate back surface
A metal vapor deposition section connected to the layer is provided, and through the metal vapor deposition section
By stacking two MIC boards,
Can be electrically separated from each other to prevent electrical influence between the boards.
The effect that circuit design can be done easily without considering
There is a fruit.

[Procedure Amendment 14]

[Document name to be amended] Statement

[Name of item to be corrected] 0024

[Correction method] Change

[Correction content]

The metal vapor on the surface of the lower MIC substrate is also used.
Shaped to connect the metallization layer on the backside of the substrate
Filling the formed through hole with metal with good thermal conductivity
Therefore, the heat dissipation of the stacked MIC boards
There is an effect that can be improved.

Claims (6)

[Claims] 1. A high frequency circuit for processing a high frequency signal, the circuit pattern having a relatively large layout area for transmitting a high frequency signal and the circuit pattern realized with a relatively small layout area on a substrate. An integrated circuit device comprising: a first circuit board having a predetermined dielectric constant; and a second circuit board mounted on the first circuit board and having a higher dielectric constant than the first circuit board. Forming a circuit pattern realized on the first circuit board in the relatively small layout area, and forming a circuit pattern requiring the relatively large layout area on the second circuit board in a small layout. A high-frequency integrated circuit device which is realized in an area and electrically connects the circuit pattern between the both substrates. 2. The high frequency integrated circuit device according to claim 1, wherein the first circuit board and the second circuit board each have a metallization layer on the entire back surface side thereof, and the first circuit board has the metallization layer. A metal vapor deposition section is provided in a region of the surface where the second circuit board is mounted, and the second circuit board is mounted on the first circuit board via the metal vapor deposition section. High frequency integrated circuit device. 3. The high frequency integrated circuit device according to claim 2, wherein the metal vapor deposition portion is electrically connected to the metallization layer on the back surface side of the first substrate. 4. The high frequency integrated circuit device according to claim 3, wherein the metal vapor deposition portion is continuously formed from the front surface of the first substrate to the metallization layer on the back surface of the substrate through the side surface thereof. A high-frequency integrated circuit device characterized in that it is electrically connected to the metallized layer of. 5. The high frequency integrated circuit device according to claim 3, wherein the metal vapor deposition portion is electrically connected to a metallization layer on the back surface of the substrate through a through hole formed in the first circuit board. A high-frequency integrated circuit device characterized in that 6. The high frequency integrated circuit device according to claim 5, further comprising a metal layer formed by filling the inside of the through hole with a metal having good thermal conductivity. apparatus.