JP4589545B2 - Wafer support member, wafer holder and wafer holding device - Google Patents

Wafer support member, wafer holder and wafer holding device Download PDF

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Publication number
JP4589545B2
JP4589545B2 JP2001042476A JP2001042476A JP4589545B2 JP 4589545 B2 JP4589545 B2 JP 4589545B2 JP 2001042476 A JP2001042476 A JP 2001042476A JP 2001042476 A JP2001042476 A JP 2001042476A JP 4589545 B2 JP4589545 B2 JP 4589545B2
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wafer
support member
holder
support
heat treatment
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JP2001042476A
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JP2002246449A (en
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宜治 井上
幸基 田中
林  俊一
啓介 川村
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Nippon Steel Corp
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Nippon Steel Corp
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Priority to JP2001042476A priority Critical patent/JP4589545B2/en
Priority to EP01974883A priority patent/EP1253631B1/en
Priority to PCT/JP2001/009081 priority patent/WO2002033743A1/en
Priority to KR10-2002-7007717A priority patent/KR100469379B1/en
Priority to TW090125588A priority patent/TW561571B/en
Priority to DE60144045T priority patent/DE60144045D1/en
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Description

【0001】
【発明の属する技術分野】
本発明は、シリコンウェハの熱処理、特にSIMOX(Separation by implanted oxygen)ウェハやアニールウェハの作製等の高温熱処理に適したウェハ保持部材、ウェハ保持具、ウェハ保持装置に関するものである。
【0002】
【従来の技術】
近年、シリコンウェハの大口径化に伴い、シリコンウェハの熱処理装置には、縦型熱処理炉が用いられるようになっている。この縦型熱処理炉内には縦型ボートが設置されており、この縦型ボートには複数本の垂直にのびた支柱が設けられ、支柱内側の側面に複数設けられた支持溝にウェハを搭載して、熱処理が行われる。ところが、このような支持方法では、ウェハの最外周部にウェハ支持部が設けられることになり、かつ支持部付近にウェハの自重が集中するために、SIMOXウェハやアニールウェハの作製等の高温熱処理の場合には、ウェハ支持部付近に大きな曲げ応力が発生し、この応力が当該熱処理温度でのシリコンウェハの降伏応力を超えてしまうと、熱処理中に、ウェハ内部にスリップと言われている欠陥が発生する問題があった。
【0003】
この問題を回避するために、図5に示すように、ボート1の複数の支柱2の支持溝3にウェハ支持板6を載せ、その上にウェハを載せて、熱処理を行うことで支持面積を増大させ、スリップの発生を抑制する方法が用いられてきている。さらに、この支持板に凹状に切り欠き7を形成することで、真空チャックによりウェハ裏面を吸着、搬送する方式のウェハ搬送装置を適用することが可能であり、高速搬入出による高生産性が実現されている。
【0004】
しかし、この技術でも、スリップを十分抑制するには至っていない。前記技術では、ウェハ支持板の形状は、その中心に対して対称でなく、かつ、支持板自身が支柱2によって非対称に支持されているため、ウェハ支持板が熱処理中に変形する。一方、ウェハ支持板とシリコンウェハの接触面積が増大したことにより、ウェハ支持板とシリコンウェハと間の摩擦力が増大する。このため、ウェハ支持板の熱変形による応力が、シリコンウェハに伝わり易くなり、スリップが容易に発生してしまう。
【0005】
この問題を回避するために、特開2000−91406号公報には、図6に示すように、切り欠きの無いウェハ支持板11に、ウェハの受け部材となるシリコン球12を3個載せ、このシリコン球によってシリコンウェハ10を3点支持する支持具が提案されている。この方法では、ウェハ支持板に切り欠きが無いために、ウェハ支持板の熱変形が比較的少ない。さらに、シリコン球とシリコンウェハとが溶着しない非酸化性雰囲気熱処理においては、点支持によってウェハ支持板とウェハの摩擦力を緩和できる。このため、ウェハ支持板の熱変形に起因するスリップを抑制できる。
【0006】
しかし、この技術でも、SIMOXアニールで用いられる酸化性雰囲気での熱処理においては、シリコン球がシリコンウェハと溶着してしまうため、ウェハ支持板の熱変形によるスリップを十分抑制するには至っていない。また、ウェハ支持板に切り欠きが無いため、ウェハ搬送装置が大型化し、搬送動作に必要な空間がウェハ支持板の上下に広がってしまう。さらに、搬送動作も複雑となるため、搬送時間が従来よりも長くなる。このため、バッチ当りの熱処理炉の生産性が低下する。さらに大きな問題は、この技術では、支持部にウェハ自重の1/3の荷重が集中して加わるため、ウェハ自重による応力によって、ウェハ支持部にスリップが発生してしまうことである。このように、ウェハの自重を3箇所のみのウェハ支持部に分配する上記方法では、シリコンウェハの大口径化に伴って、ウェハの自重が増大し続けている中で、今後、スリップ発生の問題がますます深刻化してくることは明白である。
【0007】
一方、ウェハ支持板を用いずにスリップ発生を防止する方法も提案されている。例えば、特開平11−40569号公報のように、ボートにウェハ1枚当り4箇所のウェハ支持部を設けた方法である。この場合、ウェハ支持部が4箇所あるため、3箇所の同様な形状のウェハ支持部でウェハを支持する場合に比べ、各ウェハ支持部でシリコンウェハの自重によって発生する応力が小さくなることは明白である。しかしながら、この方法では、ウェハ支持部の高さが4箇所とも30μm以内の精度で揃っていることが必要であるため、この寸法精度を有するボートの製造が極めて困難、かつ高価になってしまうと言う問題がある。さらに、ボートにウェハ1枚当り5箇所以上のウェハ支持部を設けようとすると、この寸法精度を有するボートの製造は、さらに困難となるため、ウェハ支持部の個数を簡易に増やすことができないと言う問題がある。なお、同様の問題は、前記の特開2000−91406号公報の方法において、ウェハ支持板に載せるシリコン球の数を4個以上とした場合にもやはり生ずることは、言うまでもない。
【0008】
【発明が解決しようとする課題】
シリコンウェハの熱処理、特にSIMOXウェハやアニールウェハの作製等の高温熱処理において、生産性を損なわずに、かつ、廉価なウェハ保持具を用いてスリップの発生を十分に抑制することは、シリコンウェハの製造歩留向上の観点から、解決しなければならない重要な課題であり、その実現には、以下の要件を満足したウェハ保持具が必要である。即ち、(1)工業的に実現可能な、かつ安価な保持具の製造を可能とするため、30μmを越える寸法誤差を許容できる保持具構造であること、(2)ウェハの自重による応力の発生を抑制するため、ウェハを4箇所以上のウェハ支持部で支持できる構造であること、(3)ウェハ支持板の熱変形による応力を緩和するために、ウェハを点支持する構造であること、(4)高生産性を維持するために、ウェハ保持具には凹状に切り欠きが形成され、真空チャックによりウェハ裏面を吸着、搬送する方式のウェハ搬送装置を適用することが可能であること、(5)保持具がシリコンウェハと熱処理中に溶着しない材料により構成されていること、等を満たしていなければならない。また、さらには前記要件を満足したウェハ保持具が組み込まれた、ウェハ保持装置及び熱処理炉が必要である。
【0009】
しかしながら、既に述べたように、従来技術では、上記課題を解決するに至っていない。
【0010】
本発明は、以上に述べた課題を解決し、シリコンウェハの高温熱処理に適したウェハ支持部材、ウェハ保持具およびウェハ保持装置を提供することを目的とするものである。
【0011】
【課題を解決するための手段】
以上、説明してきたように、本発明者は、シリコンウェハの熱処理、特にSIMOXウェハやアニールウェハの作製等の高温熱処理に適した、前記(1)〜(5)の要件を満足するシリコンウェハの保持方法について、これまで鋭意検討を重ねてきた。その中で、ウェハを支持する支持部材に高さ調整機能を付与することにより前記5つの要件を満足させうる保持具を作製できると考え、実験を行い、発明を完成させるに至ったのである。
【0012】
すなわち、本発明は、
(1) ウェハ保持具上に配置し、上部にウェハを載せる支持部材であって、該支持部材が上部、中間部、下部の3つの構造体からなり、少なくとも前記中間部構造体の材質が、ウェハ熱処理温度で軟化する材質からなることを特徴とするウェハ支持部材。
(2) 前記支持部材の上部および下部構造体がウェハまたはウェハ保持具と点接触するような凸部形状を有することを特徴とする前記(1)記載のウェハ支持部材。
(3) 前記支持部材の上部および下部構造体の材質が、SiC、Si34、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種、又は、これらの組み合わせであることを特徴とする前記(1)又は(2)に記載のウェハ支持部材。
(4) 前記中間部構造体の材質が石英ガラスであることを特徴とする前記(1)〜(3)の何れか1項に記載のウェハ支持部材。
(5) 上面にウェハを載せる板状の保持具であって、該保持具にウェハ受け部材がn個以上配置されるとともに、前記ウェハ受け部材のうち、少なくとも、(n−2)個(但し、nは4以上の整数)が、前記(1)〜(4)の何れか1項に記載のウェハ支持部材であることを特徴するウェハ保持具。
(6) 前記板状の保持具の材質が、SiC、Si34、SiO2、Si、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種であることを特徴とする前記(5)記載のウェハ保持具。
(7) 複数のウェハを支持、戴置するウェハ保持装置であって、該保持装置の複数本略平行に配された支柱に形成された複数の保持具用凹溝に、前記(5)又は(6)記載のウェハ保持具を水平に挿入、保持してなることを特徴とするウェハ保持装置。
【0013】
【発明の実施の形態】
次に、本発明の実施の形態について説明する。
【0014】
本発明の支持部材は、ウェハ保持具上に配置し、ウェハを支持するものである。本発明の支持部材は、上部構造体、中間部構造体、下部構造体という3つの主要な構造体から構成される。そのうち、上部構造体と下部構造体は、アニール処理中にSiウェハからの加重に耐える剛性を失わない材質からなる部材で構成される。また、これらの構造体は、Siウェハ及びウェハ支持板と溶着しないことが望ましい。具体的には、SiC、Si34、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種又はこれらの組み合わせである。これに対し、中間部構造体の材質は、室温ではウェハ自重に耐える剛性を持つが、アニール中の高温では軟化する物質が良い。ただし、溶融しないことが必要である。具体的には、石英ガラスが好ましい。
【0015】
さらに、上部および下部構造体は、ウェハおよびウェハ保持具と点接触するように凸部を有することが望ましい。点接触で支持することによりウェハ及びウェハ保持部具との溶着の可能性を減少できる。具体的には、曲率半径が100mm以下の球面加工形状であることが望ましい。さらに、中間部構造体が変形時に不均一な変形を起こさないようにする必要がある。支持部材作製の容易さから、上部構造体の下面および下部構造体の上面、さらに、中間部構造体の上面および下面は平行な平面であることが望ましい。しかし、中間部構造体が不均一な変形をしない限り、形状は限定されるものでない。また、中間部構造体の座屈を避けるため、高さより幅方向を大きくした方が好ましい。最も簡単な構造の場合、図1に示すように、上部及び下部構造体は半球状、中間部構造体は円柱形状となる。上部構造体と下部構造体は通常同じものを用いるが、本発明の条件を満たしていれば、図2に示すように形状や大きさが異なっていても問題はない。
【0016】
本発明のウェハ保持具は、上面にウェハを載せる板状保持具であって、該保持具上にウェハ受け部材がn個以上配置される。ここで、nは4以上の整数である。即ち、本発明のウェハ保持具は、ウェハの支持点を4点以上有するものである。支持点が3個以下では、ウェハの自重による応力によって、ウェハ支持部にスリップが発生しやすくなるので好ましくない。さらに、前記ウェハ受け部材のうち、少なくとも(n−2)個が、上述の本発明のウェハ保持部材でなければならない。通常4個以上の支持点でウェハを支持する場合、全ての支持点をほぼ同一の平面上に揃えなければならないため、支持点の高さを高精度、例えば、30μm以内の精度で揃える必要がある。しかし、本発明の支持部材は、その構造体内に、高温で変形する材質で構成される中間部構造体を持つため、アニールが進行すると、中間部構造体が軟化するため、ウェハ自重により支持点の高さが揃い、ウェハ自重が支持点に均等に分散される。また、ウェハ保持具が熱応力によって変形した場合も、同様の機構により、各支持点での均等加重は実現できる。加えて、支持部材の数をさらに数を増やして5個以上としても、同様の機構により各支持点での均等加重が実現できる。本発明の支持部材を用いれば、今後のウェハの大口径化、つまり、ウェハの重量化にも容易に対応できる。
【0017】
また、支持点のうち、1個又は2個であれば、本発明の支持部材の代わりに中間構造体を持たない従来の支持部材、例えば、球体やピン形状等の支持部材、を用いても良い。これらの支持点以外は、本発明の支持部材を用いて支持する場合、本発明の支持部材が高さを調整して均等加重が実現できるため、全支持点に本発明の支持部材を用いる場合とほぼ同等の効果を得ることができる。従来の支持部材の代わりにウェハ保持具と一体化した固定支持部材を用いても良い。
【0018】
本発明のウェハ保持板は、例えば、図3に示すように、円板形状のウェハ保持板にウェハ支持部材が搭載されるものである。このウェハ保持板の材質は、通常、SiC、Si34、SiO2、Si、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種である。固定支持部材を持つ場合は、固定支持部材部はSiC、Si34、又は、表面にSiC及び/又はSi34を被覆したSiで作製することが望ましい。一例を図4に示す。ウェハ保持具には、真空チャックによりウェハ裏面を吸着、搬送する方式のウェハ搬送装置が適用可能となるよう、真空チャックの挿入位置に、切り欠きが形成されていることが望ましい。
【0019】
このようなウェハ保持具は、半導体熱処理炉に設けられた複数のウェハを支持、戴置するためのウェハ保持装置に挿入され、水平に保持される。このウェハ保持装置は、例えば図5に示すような、鉛直方向に3本ないし4本の支柱2を有する縦形ボート1であり、この場合、ウェハ保持具は、保持具用溝3に挿入される。縦形ボートは、通常、SiC、SiO2又はSiによって形成される。
【0020】
ウェハ保持具がウェハ保持装置に水平に保持された後、真空チャックを有するウェハ搬送装置によって、ウェハ10が、その裏面を吸着され、切り欠き22の開口方向からウェハ保持具の上部に水平に搬入される。ウェハ10が、ウェハ10の中心とウェハ保持具21の略中心が鉛直方向に並ぶ位置まで水平に搬入されると、真空チャックが垂直方向に下降する。これに伴って、ウェハ10も垂直方向に下降し、ここで真空チャックによるウェハ吸着が解除されることにより、受け部材を介してウェハ保持具上にウェハ10が支持される。
【0021】
真空チャックは、その後切り欠き22の開口部から外部に引き出され、次の搬送動作に移る。このような搬送動作は、従来技術であるボートによるシリコンウェハの直接支持でも採用されている方法である。この方式は、特開2000−91406号公報に記載されているような、昇降ピンと自動搬送チャックとの組み合わせで搬送を行う方式と比較して、保持具用溝3の間隔を小さくとることが可能であり、生産性を損ねることがない。また、搬送機構も単純であるため、高速搬送が可能であると同時に、搬送装置が大型化しにくい。
【0022】
ウェハ10が、上記の手順にしたがって、複数の受け部材を介してウェハ保持具上に保持された後、例えば縦形ボート1であるウェハ保持装置は、熱処理炉内に設置された熱処理用チューブ内に導入され、引き続き、所定の熱処理が実施される。熱処理の条件は処理目的により様々であるが、その多くは縦形ボート1を炉内に導入する際の待機時炉内温度が600〜1000℃の範囲であり、そこから0.1〜20℃/min程度の昇温速度にて炉内温度を上げ、600〜1400℃の範囲で所定時間熱処理を行い、さらに0.1〜20℃/min程度の降温速度にて待機時炉内温度に戻す処理となる。この際、炉内の雰囲気は、一般に、アルゴン、水素、酸素、HCl等やこれらの混合体である。
【0023】
なお、ウェハの熱処理には、縦形熱処理炉による処理の他に、ウェハを炉内に導入後、急速に昇降温を行う、急速熱アニール/酸化(Rapid Thermal Annealing / Oxidation:RTA/RTO)処理があり、本発明に記載のウェハ保持具は、このRTA/RTO処理にも利用可能であることはいうまでもない。
【0024】
熱処理を終えたウェハは、縦形ボート1とともに熱処理チューブから排出される。その後、真空チャックを有するウェハ搬送装置が、上記に述べたウェハ搬入手順の逆動作を行うことによって、ウェハ10は、ウェハ保持具21の上部からウェハ保持具21に形成された切り欠き22の方向に水平に排出される。
【0025】
【実施例】
以下に本発明の実施例を説明する。
【0026】
(実験例)
本発明のウェハ支持部材及び保持具が、所望の効果を発揮するかを実験より確認した。作製した支持部材は、図1に示したタイプのものであり、具体的には、上部構造体と下部構造体の材質がSiCで、その形状は、直径10mm、高さ5mm、曲率半径5mmの半球状、中間部構造体の材質が石英ガラスで、その形状は、直径10mm、高さ5mmの円柱である。これらを重ねて一体とした。また、この一体化した支持部材とほぼ同じ大きさのSiC製の支持部材を作製して使用した。ウェハ保持具は、図3に示すような円盤を用いた。材質はSiCを使用した。また、図5に示したような固定支持部材付き保持具も使用した。保持具の大きさは、8インチ(200mm)用が直径220m、12インチ(300mm)用が直径320mmである。支持部材は、保持具の中心からウェハ半径の70%離れた位置、かつ、支持点が作る多角形が正多角形となるような位置に配置した。
【0027】
実験に用いたウェハは、8インチシリコンウェハ(直径200mm)及び12インチウェハ(直径300mm)である。熱処理パターンは1390℃で12時間のドライ酸化処理を行い、その時のスリップ発生状況はX線トポグラフィを用いて調査した。
【0028】
その結果を表1に示す。表中で、○はスリップの発生がないこと、△は軽度のスリップがあること、×は重度のスリップがあることを示す。表1に示すように、比較例では、△かまたは×が多いのに対し、本発明例では、全て○であり、本発明がスリップ防止に極めて有効であることを示している。
【0029】
【表1】

Figure 0004589545
【0030】
【発明の効果】
以上説明したように、本発明によればシリコンウェハの熱処理、特にSIMOXウェハやアニールウェハの作製等の高温熱処理に適した、工業的に実現可能な、かつ高価でないウェハ支持部材およびウェハ保持具であり、シリコンウェハのスリップ発生を防止できるウェハ支持部材およびウェハ保持具を提供できる。さらに、本発明によれば、前記ウェハ保持具を搭載することにより高生産性を維持したまま、シリコンウェハのスリップを防止できるウェハ保持装置を提供できる。
【図面の簡単な説明】
【図1】 本発明の支持部材の一実施形態を示す図
【図2】 本発明の支持部材の別の実施形態を示す図
【図3】 本発明の保持具の一実施形態を示す図
【図4】 本発明の保持具の別の実施形態を示す図
【図5】 ウェハ保持具が搭載され縦型ボートを示す図
【図6】 従来技術のウェハ保持具を示す図
【符号の説明】
1…ボート
2…ボート支柱
3…支持溝
6…ウェハ保持板
7…切り欠き
10…シリコンウェハ
11…ウェハ保持板
12…シリコン球
21…支持部材の上部構造体
22…支持部材の中間部構造体
23…支持部材の下部構造体
31…ウェハ支持部材
32…ウェハ固定支持部材[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wafer holding member, a wafer holder, and a wafer holding apparatus suitable for heat treatment of a silicon wafer, particularly high temperature heat treatment such as production of a SIMOX (Separation by implanted oxygen) wafer or an annealed wafer.
[0002]
[Prior art]
In recent years, with the increase in the diameter of silicon wafers, vertical heat treatment furnaces have been used for heat treatment apparatuses for silicon wafers. A vertical boat is installed in this vertical heat treatment furnace, and this vertical boat is provided with a plurality of vertically extending columns, and a wafer is mounted on a plurality of support grooves provided on the side surface inside the column. Then, heat treatment is performed. However, in such a support method, a wafer support portion is provided on the outermost peripheral portion of the wafer, and the weight of the wafer is concentrated in the vicinity of the support portion. Therefore, high-temperature heat treatment such as fabrication of a SIMOX wafer or an annealed wafer is performed. In this case, if a large bending stress is generated near the wafer support, and this stress exceeds the yield stress of the silicon wafer at the heat treatment temperature, a defect said to slip inside the wafer during the heat treatment. There was a problem that occurred.
[0003]
In order to avoid this problem, as shown in FIG. 5, a wafer support plate 6 is placed on the support grooves 3 of the plurality of columns 2 of the boat 1, and the wafer is placed thereon, and heat treatment is performed to increase the support area. A method of increasing and suppressing the occurrence of slip has been used. Furthermore, by forming a notch 7 in a concave shape on this support plate, it is possible to apply a wafer transfer device that sucks and transfers the backside of the wafer with a vacuum chuck, realizing high productivity by high-speed loading / unloading Has been.
[0004]
However, even this technique does not sufficiently suppress the slip. In the above technique, the shape of the wafer support plate is not symmetrical with respect to the center thereof, and the support plate itself is supported asymmetrically by the support columns 2, so that the wafer support plate is deformed during the heat treatment. On the other hand, the increase in the contact area between the wafer support plate and the silicon wafer increases the frictional force between the wafer support plate and the silicon wafer. For this reason, stress due to thermal deformation of the wafer support plate is easily transmitted to the silicon wafer, and slip easily occurs.
[0005]
In order to avoid this problem, Japanese Patent Laid-Open No. 2000-91406 discloses three silicon spheres 12 serving as wafer receiving members on a wafer support plate 11 having no notches, as shown in FIG. A support for supporting the silicon wafer 10 at three points by a silicon sphere has been proposed. In this method, since there is no notch in the wafer support plate, the thermal deformation of the wafer support plate is relatively small. Further, in the non-oxidizing atmosphere heat treatment in which the silicon sphere and the silicon wafer are not welded, the frictional force between the wafer support plate and the wafer can be reduced by point support. For this reason, the slip resulting from the thermal deformation of the wafer support plate can be suppressed.
[0006]
However, even in this technique, in the heat treatment in an oxidizing atmosphere used in SIMOX annealing, the silicon spheres are welded to the silicon wafer, so that slip due to thermal deformation of the wafer support plate has not been sufficiently suppressed. In addition, since the wafer support plate is not cut out, the wafer transfer apparatus becomes large, and the space necessary for the transfer operation spreads above and below the wafer support plate. Furthermore, since the carrying operation is complicated, the carrying time becomes longer than before. For this reason, the productivity of the heat treatment furnace per batch decreases. In this technique, a load of 1/3 of the wafer's own weight is concentrated and applied to the support portion, so that the wafer support portion slips due to the stress due to the wafer's own weight. As described above, in the above-described method for distributing the weight of the wafer to the three wafer support portions, the problem of slipping will occur in the future as the weight of the wafer continues to increase as the diameter of the silicon wafer increases. It is obvious that it will become more serious.
[0007]
On the other hand, a method for preventing the occurrence of slip without using a wafer support plate has also been proposed. For example, as disclosed in Japanese Patent Application Laid-Open No. 11-40569, a boat is provided with four wafer support portions per wafer. In this case, since there are four wafer support portions, it is obvious that the stress generated by the weight of the silicon wafer in each wafer support portion is smaller than in the case where the wafer is supported by three wafer support portions having the same shape. It is. However, this method requires that the height of the wafer support portions be aligned at an accuracy of 30 μm or less at all four locations, so that it is extremely difficult and expensive to manufacture a boat having this dimensional accuracy. There is a problem to say. Furthermore, if the boat is provided with five or more wafer support portions per wafer, it is more difficult to manufacture a boat having this dimensional accuracy, so the number of wafer support portions cannot be increased easily. There is a problem to say. Needless to say, the same problem also occurs when the number of silicon spheres placed on the wafer support plate is four or more in the method disclosed in Japanese Patent Laid-Open No. 2000-91406.
[0008]
[Problems to be solved by the invention]
In the heat treatment of silicon wafers, particularly in high-temperature heat treatments such as the production of SIMOX wafers and annealed wafers, it is possible to sufficiently suppress the occurrence of slips using an inexpensive wafer holder without impairing productivity. This is an important issue that must be solved from the viewpoint of improving the manufacturing yield. To realize this, a wafer holder that satisfies the following requirements is required. In other words, (1) a holder structure that can tolerate a dimensional error exceeding 30 μm in order to enable manufacturing of an industrially feasible and inexpensive holder, and (2) generation of stress due to the weight of the wafer. (3) a structure that supports the wafer point to relieve stress due to thermal deformation of the wafer support plate; 4) In order to maintain high productivity, it is possible to apply a wafer transfer device of a type in which a notch is formed in a concave shape in the wafer holder and the back surface of the wafer is sucked and transferred by a vacuum chuck. 5) The holder must be made of a material that is not welded to the silicon wafer during heat treatment. Furthermore, a wafer holding apparatus and a heat treatment furnace in which a wafer holder that satisfies the above requirements is incorporated are necessary.
[0009]
However, as already described, the conventional technique has not yet solved the above-described problem.
[0010]
An object of the present invention is to solve the above-described problems and to provide a wafer support member, a wafer holder and a wafer holding apparatus suitable for high-temperature heat treatment of a silicon wafer.
[0011]
[Means for Solving the Problems]
As described above, the present inventor has developed a silicon wafer that satisfies the requirements (1) to (5), which is suitable for heat treatment of a silicon wafer, particularly high-temperature heat treatment such as production of a SIMOX wafer or an annealed wafer. We have been intensively examining the holding method. Among them, it was considered that a holder capable of satisfying the above five requirements could be produced by giving a height adjusting function to the supporting member that supports the wafer, and an experiment was conducted to complete the invention.
[0012]
That is, the present invention
(1) A support member that is placed on a wafer holder and places a wafer on top, the support member comprising three structures, an upper part, an intermediate part, and a lower part, and at least the material of the intermediate part structure is A wafer support member comprising a material that softens at a wafer heat treatment temperature.
(2) The wafer support member according to (1), wherein the upper and lower structures of the support member have a convex shape that makes point contact with a wafer or a wafer holder.
(3) The material of the upper and lower structures of the support member is SiC, Si 3 N 4 , or one selected from Si whose surface is coated with SiC and / or Si 3 N 4 , or these The wafer support member according to (1) or (2), which is a combination.
(4) The wafer support member according to any one of (1) to (3), wherein a material of the intermediate structure is quartz glass.
(5) A plate-like holder for placing a wafer on the upper surface, wherein n or more wafer receiving members are arranged on the holder, and at least (n−2) of the wafer receiving members (however, , N is an integer of 4 or more) is the wafer support member according to any one of (1) to (4).
(6) The material of the plate-shaped holder is one kind selected from SiC, Si 3 N 4 , SiO 2 , Si, or Si whose surface is coated with SiC and / or Si 3 N 4. The wafer holder according to (5) above, wherein
(7) A wafer holding device for supporting and placing a plurality of wafers, wherein a plurality of holding tool concave grooves formed on a plurality of support pillars arranged substantially in parallel are arranged in the above (5) or (6) A wafer holding apparatus, wherein the wafer holder according to (6) is inserted and held horizontally.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Next, an embodiment of the present invention will be described.
[0014]
The support member of the present invention is disposed on the wafer holder and supports the wafer. The support member of the present invention is composed of three main structures, an upper structure, an intermediate structure, and a lower structure. Among them, the upper structure and the lower structure are composed of members made of a material that does not lose rigidity to withstand the load from the Si wafer during the annealing process. Further, it is desirable that these structures are not welded to the Si wafer and the wafer support plate. Specifically, it is one kind selected from SiC, Si 3 N 4 , or Si whose surface is coated with SiC and / or Si 3 N 4 , or a combination thereof. On the other hand, the material of the intermediate structure is preferably a substance that can withstand the weight of the wafer at room temperature but softens at high temperatures during annealing. However, it is necessary not to melt. Specifically, quartz glass is preferable.
[0015]
Furthermore, it is desirable that the upper and lower structures have convex portions so as to make point contact with the wafer and the wafer holder. By supporting by point contact, the possibility of welding with the wafer and the wafer holder can be reduced. Specifically, it is desirable to have a spherical processed shape with a radius of curvature of 100 mm or less. Furthermore, it is necessary to prevent the intermediate structure from being deformed unevenly during deformation. It is desirable that the lower surface of the upper structure and the upper surface of the lower structure, and the upper surface and the lower surface of the intermediate structure are parallel planes because of the ease of manufacturing the support member. However, the shape is not limited as long as the intermediate structure is not deformed unevenly. In order to avoid buckling of the intermediate structure, it is preferable to make the width direction larger than the height. In the case of the simplest structure, as shown in FIG. 1, the upper and lower structures are hemispherical, and the intermediate structure is cylindrical. The upper structure and the lower structure are usually the same. However, as long as the conditions of the present invention are satisfied, there is no problem even if the shapes and sizes are different as shown in FIG.
[0016]
The wafer holder of the present invention is a plate-like holder for placing a wafer on the upper surface, and n or more wafer receiving members are arranged on the holder. Here, n is an integer of 4 or more. That is, the wafer holder of the present invention has four or more wafer support points. If the number of support points is three or less, it is not preferable because slip is easily generated in the wafer support portion due to the stress due to the weight of the wafer. Furthermore, at least (n-2) of the wafer receiving members must be the above-described wafer holding members of the present invention. Normally, when supporting a wafer with four or more support points, all support points must be aligned on the same plane, so the heights of the support points must be aligned with high accuracy, for example, within 30 μm. is there. However, since the support member of the present invention has an intermediate part structure made of a material that deforms at a high temperature in the structure, the intermediate part structure softens as the annealing progresses. And the wafer weight is evenly distributed to the support points. In addition, even when the wafer holder is deformed by thermal stress, a uniform load at each support point can be realized by the same mechanism. In addition, even if the number of support members is further increased to 5 or more, the same mechanism can achieve equal weighting at each support point. By using the support member of the present invention, it is possible to easily cope with future wafer diameter increase, that is, wafer weight increase.
[0017]
Further, if the number of supporting points is one or two, a conventional supporting member having no intermediate structure, for example, a supporting member such as a sphere or a pin, may be used instead of the supporting member of the present invention. good. Other than these support points, when the support member of the present invention is used for support, the support member of the present invention can adjust the height to achieve equal weighting, so the support member of the present invention is used for all support points. Can obtain almost the same effect. A fixed support member integrated with the wafer holder may be used instead of the conventional support member.
[0018]
As shown in FIG. 3, for example, the wafer holding plate of the present invention is such that a wafer support member is mounted on a disc-shaped wafer holding plate. The material of the wafer holding plate is usually one selected from SiC, Si 3 N 4 , SiO 2 , Si, or Si whose surface is coated with SiC and / or Si 3 N 4 . In the case of having a fixed support member, the fixed support member portion is preferably made of SiC, Si 3 N 4 , or Si having a surface coated with SiC and / or Si 3 N 4 . An example is shown in FIG. It is desirable that the wafer holder has a notch formed at the insertion position of the vacuum chuck so that a wafer conveyance device that sucks and conveys the back surface of the wafer by a vacuum chuck can be applied.
[0019]
Such a wafer holder is inserted into a wafer holding device for supporting and placing a plurality of wafers provided in a semiconductor heat treatment furnace, and is held horizontally. This wafer holding device is a vertical boat 1 having three to four columns 2 in the vertical direction as shown in FIG. 5, for example. In this case, the wafer holder is inserted into the groove 3 for the holder. . The vertical boat is usually made of SiC, SiO 2 or Si.
[0020]
After the wafer holder is held horizontally by the wafer holding device, the wafer 10 is sucked on the back surface thereof by the wafer transfer device having a vacuum chuck, and is horizontally transferred from the opening direction of the notch 22 to the upper portion of the wafer holder. Is done. When the wafer 10 is horizontally loaded to a position where the center of the wafer 10 and the approximate center of the wafer holder 21 are aligned in the vertical direction, the vacuum chuck is lowered in the vertical direction. Along with this, the wafer 10 also descends in the vertical direction, and the wafer 10 is supported on the wafer holder via the receiving member by releasing the wafer suction by the vacuum chuck.
[0021]
The vacuum chuck is then pulled out from the opening of the notch 22 and proceeds to the next transport operation. Such a transfer operation is a method that is also used for direct support of a silicon wafer by a boat, which is a conventional technique. This method can reduce the distance between the holding tool grooves 3 as compared with a method in which conveyance is performed by a combination of a lift pin and an automatic conveyance chuck as described in Japanese Patent Application Laid-Open No. 2000-91406. And there is no loss of productivity. Also, since the transport mechanism is simple, high-speed transport is possible, and at the same time, the transport device is difficult to increase in size.
[0022]
After the wafer 10 is held on the wafer holder through the plurality of receiving members according to the above procedure, the wafer holding device, for example, the vertical boat 1 is placed in the heat treatment tube installed in the heat treatment furnace. Then, a predetermined heat treatment is performed. The heat treatment conditions vary depending on the purpose of treatment, but most of them have a standby furnace temperature in the range of 600 to 1000 ° C. when the vertical boat 1 is introduced into the furnace, from which 0.1 to 20 ° C. / A process in which the temperature in the furnace is raised at a rate of temperature rise of about min, heat treatment is performed for a predetermined time in the range of 600 to 1400 ° C., and the temperature in the furnace is returned to the standby temperature at a temperature drop rate of about 0.1 to 20 ° C./min It becomes. At this time, the atmosphere in the furnace is generally argon, hydrogen, oxygen, HCl, or a mixture thereof.
[0023]
In addition to the vertical heat treatment furnace, the wafer heat treatment includes a rapid thermal annealing / oxidation (RTA / RTO) process in which the wafer is introduced into the furnace and then the temperature is raised and lowered rapidly. It goes without saying that the wafer holder described in the present invention can also be used for this RTA / RTO process.
[0024]
The wafer after the heat treatment is discharged from the heat treatment tube together with the vertical boat 1. Thereafter, the wafer transfer apparatus having the vacuum chuck performs the reverse operation of the wafer transfer procedure described above, so that the wafer 10 is directed from the upper part of the wafer holder 21 to the notch 22 formed in the wafer holder 21. Discharged horizontally.
[0025]
【Example】
Examples of the present invention will be described below.
[0026]
(Experimental example)
It was confirmed from experiments whether the wafer support member and the holder of the present invention exert a desired effect. The produced support member is of the type shown in FIG. 1, and specifically, the material of the upper structure and the lower structure is SiC, and the shape thereof is a diameter of 10 mm, a height of 5 mm, and a curvature radius of 5 mm. The material of the hemispherical and intermediate structure is quartz glass, and its shape is a cylinder having a diameter of 10 mm and a height of 5 mm. These were layered together. Further, a SiC support member having the same size as the integrated support member was produced and used. As the wafer holder, a disk as shown in FIG. 3 was used. The material used was SiC. Moreover, the holder with a fixed support member as shown in FIG. 5 was also used. The size of the holder is 220 m in diameter for 8 inches (200 mm) and 320 mm in diameter for 12 inches (300 mm). The support member was disposed at a position 70% away from the wafer radius from the center of the holder and at a position where the polygon formed by the support point was a regular polygon.
[0027]
Wafers used in the experiment were an 8-inch silicon wafer (diameter 200 mm) and a 12-inch wafer (diameter 300 mm). The heat treatment pattern was dry oxidation treatment at 1390 ° C. for 12 hours, and the occurrence of slip at that time was investigated using X-ray topography.
[0028]
The results are shown in Table 1. In the table, ◯ indicates that no slip occurs, Δ indicates that there is a slight slip, and × indicates that there is a severe slip. As shown in Table 1, in the comparative example, there are many Δ or ×, whereas in the example of the present invention, all are ◯, indicating that the present invention is extremely effective for preventing slip.
[0029]
[Table 1]
Figure 0004589545
[0030]
【The invention's effect】
As described above, according to the present invention, an industrially feasible and inexpensive wafer support member and wafer holder suitable for heat treatment of silicon wafers, particularly high temperature heat treatment such as production of SIMOX wafers and annealed wafers. In addition, it is possible to provide a wafer support member and a wafer holder that can prevent the occurrence of slipping of the silicon wafer. Furthermore, according to the present invention, it is possible to provide a wafer holding device capable of preventing a silicon wafer from slipping while maintaining high productivity by mounting the wafer holder.
[Brief description of the drawings]
FIG. 1 is a view showing an embodiment of the support member of the present invention. FIG. 2 is a view showing another embodiment of the support member of the present invention. FIG. 3 is a view showing an embodiment of the holder of the present invention. FIG. 4 is a view showing another embodiment of the holder of the present invention. FIG. 5 is a view showing a vertical boat on which a wafer holder is mounted. FIG. 6 is a view showing a prior art wafer holder.
DESCRIPTION OF SYMBOLS 1 ... Boat 2 ... Boat support | pillar 3 ... Support groove 6 ... Wafer holding plate 7 ... Notch 10 ... Silicon wafer 11 ... Wafer holding plate 12 ... Silicon ball 21 ... Upper structure 22 of support member ... Intermediate structure of support member 23 ... Lower structure 31 of support member ... Wafer support member 32 ... Wafer fixing support member

Claims (7)

ウェハ保持具上に配置し、上部にウェハを載せる支持部材であって、該支持部材が上部、中間部、下部の3つの構造体からなり、少なくとも前記中間部構造体の材質が、ウェハ熱処理温度で軟化する材質からなることを特徴とするウェハ支持部材。A support member that is placed on a wafer holder and places a wafer on top, the support member comprising three structures, an upper part, an intermediate part, and a lower part, at least the material of the intermediate part structure being a wafer heat treatment temperature A wafer support member made of a material that softens at the same time. 前記支持部材の上部及び下部構造体が、ウェハ又はウェハ保持具と点接触するような凸部形状を有することを特徴とする請求項1記載のウェハ支持部材。2. The wafer support member according to claim 1, wherein the upper and lower structures of the support member have a convex shape that makes point contact with a wafer or a wafer holder. 前記支持部材の上部及び下部構造体の材質が、SiC、Si34、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種、又は、これらの組み合わせであることを特徴とする請求項1又は2に記載のウェハ支持部材。The material of the upper and lower structures of the support member is one selected from SiC, Si 3 N 4 , or Si whose surface is coated with SiC and / or Si 3 N 4 , or a combination thereof. The wafer support member according to claim 1, wherein: 前記中間部構造体の材質が、石英ガラスであることを特徴とする請求項1〜3の何れか1項に記載のウェハ支持部材。The wafer support member according to claim 1, wherein a material of the intermediate structure is quartz glass. 上面にウェハを載せる板状の保持具であって、該保持具にウェハ受け部材がn個以上配置されるとともに、前記ウェハ受け部材のうち、少なくとも、(n−2)個(但し、nは4以上の整数)が、請求項1〜4の何れか1項に記載のウェハ支持部材であることを特徴するウェハ保持具。A plate-like holder for placing a wafer on the upper surface, wherein n or more wafer receiving members are arranged on the holder, and at least (n-2) of the wafer receiving members (where n is A wafer holder, wherein an integer of 4 or more is the wafer support member according to any one of claims 1 to 4. 前記板状の保持具の材質が、SiC、Si34、SiO2、Si、又は、表面にSiC及び/又はSi34を被覆したSiから選ばれたる1種であることを特徴とする請求項5記載のウェハ保持具。The material of the plate-shaped holder is one kind selected from SiC, Si 3 N 4 , SiO 2 , Si, or Si whose surface is coated with SiC and / or Si 3 N 4. The wafer holder according to claim 5. 複数のウェハを支持、戴置するウェハ保持装置であって、該保持装置の複数本略平行に配された支柱に形成された複数の保持具用凹溝に、請求項5又は6に記載のウェハ保持具を水平に挿入、保持してなることを特徴とするウェハ保持装置。7. A wafer holding device for supporting and placing a plurality of wafers, wherein a plurality of holding tool grooves formed on substantially parallel columns of the holding device have a plurality of recessed grooves for holding tools according to claim 5 or 6. A wafer holding device comprising a wafer holder inserted and held horizontally.
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PCT/JP2001/009081 WO2002033743A1 (en) 2000-10-16 2001-10-16 Wafer holder, wafer support member, wafer holding device, and heat treating furnace
KR10-2002-7007717A KR100469379B1 (en) 2000-10-16 2001-10-16 Wafer holder, wafer support member, wafer holding device, and heat treating furnace
TW090125588A TW561571B (en) 2000-10-16 2001-10-16 A wafer holder, wafer support member, wafer boat and heat treatment furnace for wafer
DE60144045T DE60144045D1 (en) 2000-10-16 2001-10-16 WAFER BRACKET, WAFER BRACKET ARRANGEMENT AND HEAT TREATMENT OVEN

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JPH0992625A (en) * 1995-09-20 1997-04-04 Tokyo Electron Ltd Boat for heat treatment
JPH09129567A (en) * 1995-10-30 1997-05-16 N T T Electron Technol Kk Wafer support structure of vertical wafer boat
JPH10284429A (en) * 1997-03-31 1998-10-23 Sumitomo Sitix Corp Wafer supporting device
JP2000091406A (en) * 1998-09-08 2000-03-31 Mitsubishi Materials Silicon Corp Wafer holder
JP2000150402A (en) * 1998-11-09 2000-05-30 Shin Etsu Handotai Co Ltd Substrate supporting jig

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163444A (en) * 1992-11-27 1994-06-10 Oki Electric Ind Co Ltd Wafer thermal treatment method and guard ring structure used therefor
JPH06333914A (en) * 1993-03-24 1994-12-02 Sumitomo Metal Ind Ltd Semiconductor manufacturing device
JPH08236515A (en) * 1995-03-01 1996-09-13 Tokyo Electron Ltd Heat treatment device
JPH0992625A (en) * 1995-09-20 1997-04-04 Tokyo Electron Ltd Boat for heat treatment
JPH09129567A (en) * 1995-10-30 1997-05-16 N T T Electron Technol Kk Wafer support structure of vertical wafer boat
JPH10284429A (en) * 1997-03-31 1998-10-23 Sumitomo Sitix Corp Wafer supporting device
JP2000091406A (en) * 1998-09-08 2000-03-31 Mitsubishi Materials Silicon Corp Wafer holder
JP2000150402A (en) * 1998-11-09 2000-05-30 Shin Etsu Handotai Co Ltd Substrate supporting jig

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