JP2002246449A - Wafer support member, wafer-holding tool and wafer- holding device - Google Patents
Wafer support member, wafer-holding tool and wafer- holding deviceInfo
- Publication number
- JP2002246449A JP2002246449A JP2001042476A JP2001042476A JP2002246449A JP 2002246449 A JP2002246449 A JP 2002246449A JP 2001042476 A JP2001042476 A JP 2001042476A JP 2001042476 A JP2001042476 A JP 2001042476A JP 2002246449 A JP2002246449 A JP 2002246449A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- support member
- holder
- heat treatment
- holding device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコンウェハの
熱処理、特にＳＩＭＯＸ（Separation by implanted ox
ygen）ウェハやアニールウェハの作製等の高温熱処理に
適したウェハ保持部材、ウェハ保持具、ウェハ保持装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to heat treatment of a silicon wafer, and more particularly to SIMOX (Separation by implanted ox).
The present invention relates to a wafer holder, a wafer holder, and a wafer holder suitable for high-temperature heat treatment such as production of a wafer or an annealed wafer.
【０００２】[0002]
【従来の技術】近年、シリコンウェハの大口径化に伴
い、シリコンウェハの熱処理装置には、縦型熱処理炉が
用いられるようになっている。この縦型熱処理炉内には
縦型ボートが設置されており、この縦型ボートには複数
本の垂直にのびた支柱が設けられ、支柱内側の側面に複
数設けられた支持溝にウェハを搭載して、熱処理が行わ
れる。ところが、このような支持方法では、ウェハの最
外周部にウェハ支持部が設けられることになり、かつ支
持部付近にウェハの自重が集中するために、ＳＩＭＯＸ
ウェハやアニールウェハの作製等の高温熱処理の場合に
は、ウェハ支持部付近に大きな曲げ応力が発生し、この
応力が当該熱処理温度でのシリコンウェハの降伏応力を
超えてしまうと、熱処理中に、ウェハ内部にスリップと
言われている欠陥が発生する問題があった。2. Description of the Related Art In recent years, as silicon wafers have become larger in diameter, vertical heat treatment furnaces have been used as heat treatment apparatuses for silicon wafers. A vertical boat is installed in the vertical heat treatment furnace, and the vertical boat is provided with a plurality of vertically extending columns, and a wafer is mounted in a plurality of supporting grooves provided on the inner side surface of the column. Then, heat treatment is performed. However, in such a supporting method, since the wafer supporting portion is provided at the outermost peripheral portion of the wafer, and the weight of the wafer is concentrated near the supporting portion, SIMOX is required.
In the case of a high-temperature heat treatment such as the production of a wafer or an annealed wafer, a large bending stress is generated in the vicinity of the wafer support portion, and if this stress exceeds the yield stress of the silicon wafer at the heat treatment temperature, during the heat treatment, There is a problem that a defect called a slip occurs inside the wafer.
【０００３】この問題を回避するために、図５に示すよ
うに、ボート１の複数の支柱２の支持溝３にウェハ支持
板６を載せ、その上にウェハを載せて、熱処理を行うこ
とで支持面積を増大させ、スリップの発生を抑制する方
法が用いられてきている。さらに、この支持板に凹状に
切り欠き７を形成することで、真空チャックによりウェ
ハ裏面を吸着、搬送する方式のウェハ搬送装置を適用す
ることが可能であり、高速搬入出による高生産性が実現
されている。In order to avoid this problem, as shown in FIG. 5, a wafer support plate 6 is placed in a support groove 3 of a plurality of columns 2 of a boat 1, a wafer is placed thereon, and heat treatment is performed. A method of increasing the supporting area and suppressing the occurrence of slip has been used. Further, by forming the notch 7 in a concave shape in this support plate, it is possible to apply a wafer transfer device of a type in which a vacuum chuck chucks and transfers the back surface of the wafer, realizing high productivity by high-speed loading and unloading. Have been.
【０００４】しかし、この技術でも、スリップを十分抑
制するには至っていない。前記技術では、ウェハ支持板
の形状は、その中心に対して対称でなく、かつ、支持板
自身が支柱２によって非対称に支持されているため、ウ
ェハ支持板が熱処理中に変形する。一方、ウェハ支持板
とシリコンウェハの接触面積が増大したことにより、ウ
ェハ支持板とシリコンウェハと間の摩擦力が増大する。
このため、ウェハ支持板の熱変形による応力が、シリコ
ンウェハに伝わり易くなり、スリップが容易に発生して
しまう。However, even this technique does not sufficiently suppress the slip. In the above technique, the shape of the wafer support plate is not symmetrical with respect to the center thereof, and the support plate itself is asymmetrically supported by the columns 2, so that the wafer support plate is deformed during the heat treatment. On the other hand, as the contact area between the wafer support plate and the silicon wafer increases, the frictional force between the wafer support plate and the silicon wafer increases.
For this reason, the stress due to the thermal deformation of the wafer support plate is easily transmitted to the silicon wafer, and the slip easily occurs.
【０００５】この問題を回避するために、特開２０００
−９１４０６号公報には、図６に示すように、切り欠き
の無いウェハ支持板１１に、ウェハの受け部材となるシ
リコン球１２を３個載せ、このシリコン球によってシリ
コンウェハ１０を３点支持する支持具が提案されてい
る。この方法では、ウェハ支持板に切り欠きが無いため
に、ウェハ支持板の熱変形が比較的少ない。さらに、シ
リコン球とシリコンウェハとが溶着しない非酸化性雰囲
気熱処理においては、点支持によってウェハ支持板とウ
ェハの摩擦力を緩和できる。このため、ウェハ支持板の
熱変形に起因するスリップを抑制できる。In order to avoid this problem, Japanese Patent Laid-Open Publication
In Japanese Patent Application Laid-Open No. 91406/1991, as shown in FIG. 6, three silicon balls 12 serving as a wafer receiving member are placed on a wafer support plate 11 having no notch, and three points of the silicon wafer 10 are supported by the silicon balls. Supports have been proposed. In this method, there is no notch in the wafer support plate, so that the thermal deformation of the wafer support plate is relatively small. Further, in a heat treatment in a non-oxidizing atmosphere in which the silicon balls and the silicon wafer are not welded, the frictional force between the wafer support plate and the wafer can be reduced by the point support. For this reason, slip caused by thermal deformation of the wafer support plate can be suppressed.
【０００６】しかし、この技術でも、ＳＩＭＯＸアニー
ルで用いられる酸化性雰囲気での熱処理においては、シ
リコン球がシリコンウェハと溶着してしまうため、ウェ
ハ支持板の熱変形によるスリップを十分抑制するには至
っていない。また、ウェハ支持板に切り欠きが無いた
め、ウェハ搬送装置が大型化し、搬送動作に必要な空間
がウェハ支持板の上下に広がってしまう。さらに、搬送
動作も複雑となるため、搬送時間が従来よりも長くな
る。このため、バッチ当りの熱処理炉の生産性が低下す
る。さらに大きな問題は、この技術では、支持部にウェ
ハ自重の１／３の荷重が集中して加わるため、ウェハ自
重による応力によって、ウェハ支持部にスリップが発生
してしまうことである。このように、ウェハの自重を３
箇所のみのウェハ支持部に分配する上記方法では、シリ
コンウェハの大口径化に伴って、ウェハの自重が増大し
続けている中で、今後、スリップ発生の問題がますます
深刻化してくることは明白である。However, even in this technique, in a heat treatment in an oxidizing atmosphere used in SIMOX annealing, silicon spheres are welded to a silicon wafer, so that slip due to thermal deformation of a wafer support plate has been sufficiently suppressed. Not in. Further, since there is no notch in the wafer support plate, the size of the wafer transfer device is increased, and the space required for the transfer operation is extended above and below the wafer support plate. Further, since the transport operation is complicated, the transport time is longer than before. For this reason, the productivity of the heat treatment furnace per batch decreases. An even more serious problem is that in this technique, a load of １ ／ of the wafer's own weight is concentrated on the support, so that a stress due to the wafer's own weight causes a slip in the wafer support. Thus, the weight of the wafer is reduced by 3
With the above method of distributing to only the wafer support part, the problem of the occurrence of slip will become more serious in the future as the weight of the wafer continues to increase as the diameter of the silicon wafer increases. It is obvious.
【０００７】一方、ウェハ支持板を用いずにスリップ発
生を防止する方法も提案されている。例えば、特開平１
１−４０５６９号公報のように、ボートにウェハ１枚当
り４箇所のウェハ支持部を設けた方法である。この場
合、ウェハ支持部が４箇所あるため、３箇所の同様な形
状のウェハ支持部でウェハを支持する場合に比べ、各ウ
ェハ支持部でシリコンウェハの自重によって発生する応
力が小さくなることは明白である。しかしながら、この
方法では、ウェハ支持部の高さが４箇所とも３０μｍ以
内の精度で揃っていることが必要であるため、この寸法
精度を有するボートの製造が極めて困難、かつ高価にな
ってしまうと言う問題がある。さらに、ボートにウェハ
１枚当り５箇所以上のウェハ支持部を設けようとする
と、この寸法精度を有するボートの製造は、さらに困難
となるため、ウェハ支持部の個数を簡易に増やすことが
できないと言う問題がある。なお、同様の問題は、前記
の特開２０００−９１４０６号公報の方法において、ウ
ェハ支持板に載せるシリコン球の数を４個以上とした場
合にもやはり生ずることは、言うまでもない。On the other hand, a method for preventing occurrence of slip without using a wafer support plate has also been proposed. For example, JP
As disclosed in Japanese Patent Application Laid-Open No. 1-40569, a boat is provided with four wafer support portions for each wafer. In this case, since there are four wafer support portions, it is apparent that the stress generated by the weight of the silicon wafer at each wafer support portion is smaller than when the wafer is supported by three similarly-shaped wafer support portions. It is. However, in this method, it is necessary that the heights of the wafer support portions are uniform at an accuracy of 30 μm or less at all four positions. There is a problem to say. Further, if it is attempted to provide a boat with five or more wafer supports for each wafer, it becomes more difficult to manufacture a boat having this dimensional accuracy, so that the number of wafer supports cannot be easily increased. There is a problem to say. It is needless to say that the same problem also occurs when the number of silicon balls mounted on the wafer support plate is four or more in the method of Japanese Patent Application Laid-Open No. 2000-91406.
【０００８】[0008]
【発明が解決しようとする課題】シリコンウェハの熱処
理、特にＳＩＭＯＸウェハやアニールウェハの作製等の
高温熱処理において、生産性を損なわずに、かつ、廉価
なウェハ保持具を用いてスリップの発生を十分に抑制す
ることは、シリコンウェハの製造歩留向上の観点から、
解決しなければならない重要な課題であり、その実現に
は、以下の要件を満足したウェハ保持具が必要である。
即ち、（１）工業的に実現可能な、かつ安価な保持具の
製造を可能とするため、３０μｍを越える寸法誤差を許
容できる保持具構造であること、（２）ウェハの自重に
よる応力の発生を抑制するため、ウェハを４箇所以上の
ウェハ支持部で支持できる構造であること、（３）ウェ
ハ支持板の熱変形による応力を緩和するために、ウェハ
を点支持する構造であること、（４）高生産性を維持す
るために、ウェハ保持具には凹状に切り欠きが形成さ
れ、真空チャックによりウェハ裏面を吸着、搬送する方
式のウェハ搬送装置を適用することが可能であること、
（５）保持具がシリコンウェハと熱処理中に溶着しない
材料により構成されていること、等を満たしていなけれ
ばならない。また、さらには前記要件を満足したウェハ
保持具が組み込まれた、ウェハ保持装置及び熱処理炉が
必要である。In a heat treatment of a silicon wafer, particularly in a high-temperature heat treatment such as the production of a SIMOX wafer or an annealed wafer, a sufficient amount of slip can be generated by using an inexpensive wafer holder without losing productivity. From the viewpoint of improving the production yield of silicon wafers,
This is an important problem to be solved, and its realization requires a wafer holder that satisfies the following requirements.
That is, (1) a holder structure capable of permitting a dimensional error exceeding 30 μm to enable the manufacture of an industrially realizable and inexpensive holder, and (2) generation of stress due to the weight of the wafer. (3) a structure in which the wafer is point-supported in order to alleviate stress due to thermal deformation of the wafer support plate, 4) In order to maintain high productivity, a notch is formed in the wafer holder in a concave shape, and it is possible to apply a wafer transfer device that sucks and transfers the back surface of the wafer with a vacuum chuck.
(5) The holder must be made of a material that does not adhere to the silicon wafer during the heat treatment. Further, a wafer holding device and a heat treatment furnace in which a wafer holder satisfying the above requirements is incorporated are required.
【０００９】しかしながら、既に述べたように、従来技
術では、上記課題を解決するに至っていない。However, as described above, the prior art has not solved the above-mentioned problems.
【００１０】本発明は、以上に述べた課題を解決し、シ
リコンウェハの高温熱処理に適したウェハ支持部材、ウ
ェハ保持具およびウェハ保持装置を提供することを目的
とするものである。An object of the present invention is to solve the above-mentioned problems and to provide a wafer support member, a wafer holder and a wafer holder suitable for high-temperature heat treatment of a silicon wafer.
【００１１】[0011]
【課題を解決するための手段】以上、説明してきたよう
に、本発明者は、シリコンウェハの熱処理、特にＳＩＭ
ＯＸウェハやアニールウェハの作製等の高温熱処理に適
した、前記（１）〜（５）の要件を満足するシリコンウ
ェハの保持方法について、これまで鋭意検討を重ねてき
た。その中で、ウェハを支持する支持部材に高さ調整機
能を付与することにより前記５つの要件を満足させうる
保持具を作製できると考え、実験を行い、発明を完成さ
せるに至ったのである。As described above, the inventor of the present invention has conducted a heat treatment of a silicon wafer, particularly a SIM wafer.
A method of holding a silicon wafer, which satisfies the requirements (1) to (5) and is suitable for high-temperature heat treatment such as production of an OX wafer or an annealed wafer, has been intensively studied. In this regard, it was considered that a holder capable of satisfying the above five requirements could be manufactured by imparting a height adjusting function to a supporting member for supporting a wafer, and an experiment was conducted to complete the invention.
【００１２】すなわち、本発明は、 （１） ウェハ保持具上に配置し、上部にウェハを載せ
る支持部材であって、該支持部材が上部、中間部、下部
の３つの構造体からなり、少なくとも前記中間部構造体
の材質が、ウェハ熱処理温度で軟化する材質からなるこ
とを特徴とするウェハ支持部材。 （２） 前記支持部材の上部および下部構造体がウェハ
またはウェハ保持具と点接触するような凸部形状を有す
ることを特徴とする前記（１）記載のウェハ支持部材。 （３） 前記支持部材の上部および下部構造体の材質
が、ＳｉＣ、Ｓｉ3Ｎ4、又は、表面にＳｉＣ及び／又は
Ｓｉ3Ｎ4を被覆したＳｉから選ばれたる１種、又は、こ
れらの組み合わせであることを特徴とする前記（１）又
は（２）に記載のウェハ支持部材。 （４） 前記中間部構造体の材質が石英ガラスであるこ
とを特徴とする前記（１）〜（３）の何れか1項に記載
のウェハ支持部材。 （５） 上面にウェハを載せる板状の保持具であって、
該保持具にウェハ受け部材がｎ個以上配置されるととも
に、前記ウェハ受け部材のうち、少なくとも、（ｎ−
２）個（但し、ｎは４以上の整数）が、前記（１）〜
（４）の何れか1項に記載のウェハ支持部材であること
を特徴するウェハ保持具。 （６） 前記板状の保持具の材質が、ＳｉＣ、Ｓｉ
3Ｎ4、ＳｉＯ2、Ｓｉ、又は、表面にＳｉＣ及び／又は
Ｓｉ3Ｎ4を被覆したＳｉから選ばれたる１種であること
を特徴とする前記（５）記載のウェハ保持具。 （７） 複数のウェハを支持、戴置するウェハ保持装置
であって、該保持装置の複数本略平行に配された支柱に
形成された複数の保持具用凹溝に、前記（５）又は
（６）記載のウェハ保持具を水平に挿入、保持してなる
ことを特徴とするウェハ保持装置。That is, the present invention provides: (1) a support member arranged on a wafer holder and mounting a wafer on an upper part, the support member comprising at least three structures of an upper part, an intermediate part, and a lower part; A wafer support member, wherein the material of the intermediate structure is made of a material that softens at a wafer heat treatment temperature. (2) The wafer support member according to (1), wherein the upper and lower structures of the support member have a convex shape so as to make point contact with a wafer or a wafer holder. (3) The material of the upper and lower structures of the support member is selected from SiC, Si 3 N 4 , or Si whose surface is coated with SiC and / or Si 3 N 4 , or a material selected from the group consisting of SiC and Si 3 N 4 . The wafer support member according to the above (1) or (2), which is a combination. (4) The wafer support member according to any one of (1) to (3), wherein a material of the intermediate structure is quartz glass. (5) A plate-like holder for mounting a wafer on the upper surface,
At least n wafer receiving members are arranged on the holder, and at least (n-
2) (where n is an integer of 4 or more)
(4) A wafer holder, which is the wafer support member according to any one of (4) and (4). (6) The material of the plate-shaped holder is SiC, Si
The wafer holder according to (5), wherein the wafer holder is one selected from 3 N 4 , SiO 2 , Si, or Si having a surface coated with SiC and / or Si 3 N 4 . (7) A wafer holding device that supports and mounts a plurality of wafers, wherein the plurality of holding device concave grooves formed on a plurality of substantially parallel columns of the holding device are provided with the aforementioned (5) or (6) A wafer holding device, wherein the wafer holding device according to (6) is inserted and held horizontally.
【００１３】[0013]
【発明の実施の形態】次に、本発明の実施の形態につい
て説明する。Next, an embodiment of the present invention will be described.
【００１４】本発明の支持部材は、ウェハ保持具上に配
置し、ウェハを支持するものである。本発明の支持部材
は、上部構造体、中間部構造体、下部構造体という３つ
の主要な構造体から構成される。そのうち、上部構造体
と下部構造体は、アニール処理中にＳｉウェハからの加
重に耐える剛性を失わない材質からなる部材で構成され
る。また、これらの構造体は、Ｓｉウェハ及びウェハ支
持板と溶着しないことが望ましい。具体的には、Ｓｉ
Ｃ、Ｓｉ3Ｎ4、又は、表面にＳｉＣ及び／又はＳｉ3Ｎ4
を被覆したＳｉから選ばれたる１種又はこれらの組み合
わせである。これに対し、中間部構造体の材質は、室温
ではウェハ自重に耐える剛性を持つが、アニール中の高
温では軟化する物質が良い。ただし、溶融しないことが
必要である。具体的には、石英ガラスが好ましい。The support member of the present invention is arranged on a wafer holder and supports a wafer. The support member of the present invention is composed of three main structures: an upper structure, an intermediate structure, and a lower structure. The upper structure and the lower structure are made of a member made of a material that does not lose rigidity enough to withstand the load from the Si wafer during the annealing process. Further, it is desirable that these structures do not weld to the Si wafer and the wafer support plate. Specifically, Si
C, Si 3 N 4 , or SiC and / or Si 3 N 4 on the surface
Or a combination thereof selected from Si coated with On the other hand, the material of the intermediate structure preferably has a rigidity that can withstand the weight of the wafer at room temperature, but softens at a high temperature during annealing. However, it is necessary not to melt. Specifically, quartz glass is preferable.
【００１５】さらに、上部および下部構造体は、ウェハ
およびウェハ保持具と点接触するように凸部を有するこ
とが望ましい。点接触で支持することによりウェハ及び
ウェハ保持部具との溶着の可能性を減少できる。具体的
には、曲率半径が１００ｍｍ以下の球面加工形状である
ことが望ましい。さらに、中間部構造体が変形時に不均
一な変形を起こさないようにする必要がある。支持部材
作製の容易さから、上部構造体の下面および下部構造体
の上面、さらに、中間部構造体の上面および下面は平行
な平面であることが望ましい。しかし、中間部構造体が
不均一な変形をしない限り、形状は限定されるものでな
い。また、中間部構造体の座屈を避けるため、高さより
幅方向を大きくした方が好ましい。最も簡単な構造の場
合、図１に示すように、上部及び下部構造体は半球状、
中間部構造体は円柱形状となる。上部構造体と下部構造
体は通常同じものを用いるが、本発明の条件を満たして
いれば、図２に示すように形状や大きさが異なっていて
も問題はない。Further, it is desirable that the upper and lower structures have convex portions so as to make point contact with the wafer and the wafer holder. By supporting by point contact, the possibility of welding between the wafer and the wafer holder can be reduced. Specifically, it is desirable to have a spherical processed shape having a radius of curvature of 100 mm or less. Further, it is necessary to prevent the intermediate structure from being deformed unevenly when deformed. It is desirable that the lower surface of the upper structure and the upper surface of the lower structure, and the upper surface and the lower surface of the intermediate structure are parallel planes from the viewpoint of ease of manufacturing the support member. However, the shape is not limited as long as the intermediate structure does not deform unevenly. Further, in order to avoid buckling of the intermediate structure, it is preferable to make the width direction larger than the height. In the simplest case, the upper and lower structures are hemispherical, as shown in FIG.
The intermediate structure has a columnar shape. The upper structure and the lower structure are usually the same, but as long as the conditions of the present invention are satisfied, there is no problem even if the shapes and sizes are different as shown in FIG.
【００１６】本発明のウェハ保持具は、上面にウェハを
載せる板状保持具であって、該保持具上にウェハ受け部
材がｎ個以上配置される。ここで、ｎは４以上の整数で
ある。即ち、本発明のウェハ保持具は、ウェハの支持点
を４点以上有するものである。支持点が３個以下では、
ウェハの自重による応力によって、ウェハ支持部にスリ
ップが発生しやすくなるので好ましくない。さらに、前
記ウェハ受け部材のうち、少なくとも（ｎ−２）個が、
上述の本発明のウェハ保持部材でなければならない。通
常４個以上の支持点でウェハを支持する場合、全ての支
持点をほぼ同一の平面上に揃えなければならないため、
支持点の高さを高精度、例えば、３０μｍ以内の精度で
揃える必要がある。しかし、本発明の支持部材は、その
構造体内に、高温で変形する材質で構成される中間部構
造体を持つため、アニールが進行すると、中間部構造体
が軟化するため、ウェハ自重により支持点の高さが揃
い、ウェハ自重が支持点に均等に分散される。また、ウ
ェハ保持具が熱応力によって変形した場合も、同様の機
構により、各支持点での均等加重は実現できる。加え
て、支持部材の数をさらに数を増やして５個以上として
も、同様の機構により各支持点での均等加重が実現でき
る。本発明の支持部材を用いれば、今後のウェハの大口
径化、つまり、ウェハの重量化にも容易に対応できる。The wafer holder of the present invention is a plate-like holder on which a wafer is placed, and n or more wafer receiving members are arranged on the holder. Here, n is an integer of 4 or more. That is, the wafer holder of the present invention has four or more wafer support points. With three or fewer support points,
It is not preferable because the stress due to the weight of the wafer easily causes slip in the wafer supporting portion. Further, at least (n-2) of the wafer receiving members are:
It must be the above-described wafer holding member of the present invention. Usually, when supporting a wafer with four or more support points, all the support points must be aligned on substantially the same plane,
It is necessary that the heights of the support points be aligned with high accuracy, for example, within 30 μm. However, since the support member of the present invention has an intermediate portion structure made of a material that can be deformed at a high temperature in the structure, the intermediate portion structure softens as annealing progresses. And the wafer's own weight is evenly distributed to the supporting points. Further, even when the wafer holder is deformed by thermal stress, the same mechanism can realize equal weighting at each support point. In addition, even if the number of support members is further increased to five or more, the same mechanism can realize equal weighting at each support point. By using the support member of the present invention, it is possible to easily cope with an increase in the diameter of the wafer in the future, that is, an increase in the weight of the wafer.
【００１７】また、支持点のうち、１個又は２個であれ
ば、本発明の支持部材の代わりに中間構造体を持たない
従来の支持部材、例えば、球体やピン形状等の支持部
材、を用いても良い。これらの支持点以外は、本発明の
支持部材を用いて支持する場合、本発明の支持部材が高
さを調整して均等加重が実現できるため、全支持点に本
発明の支持部材を用いる場合とほぼ同等の効果を得るこ
とができる。従来の支持部材の代わりにウェハ保持具と
一体化した固定支持部材を用いても良い。If one or two of the support points are used, a conventional support member having no intermediate structure, such as a sphere or a pin-shaped support member, may be used instead of the support member of the present invention. May be used. Other than these support points, when supporting using the support member of the present invention, since the support member of the present invention can realize a uniform weight by adjusting the height, the support member of the present invention is used for all the support points. It is possible to obtain substantially the same effect as. Instead of the conventional support member, a fixed support member integrated with the wafer holder may be used.
【００１８】本発明のウェハ保持板は、例えば、図３に
示すように、円板形状のウェハ保持板にウェハ支持部材
が搭載されるものである。このウェハ保持板の材質は、
通常、ＳｉＣ、Ｓｉ3Ｎ4、ＳｉＯ2、Ｓｉ、又は、表面
にＳｉＣ及び／又はＳｉ3Ｎ4を被覆したＳｉから選ばれ
たる１種である。固定支持部材を持つ場合は、固定支持
部材部はＳｉＣ、Ｓｉ3Ｎ4、又は、表面にＳｉＣ及び／
又はＳｉ3Ｎ4を被覆したＳｉで作製することが望まし
い。一例を図４に示す。ウェハ保持具には、真空チャッ
クによりウェハ裏面を吸着、搬送する方式のウェハ搬送
装置が適用可能となるよう、真空チャックの挿入位置
に、切り欠きが形成されていることが望ましい。The wafer holding plate of the present invention is, for example, one in which a wafer supporting member is mounted on a disk-shaped wafer holding plate as shown in FIG. The material of this wafer holding plate is
Usually, SiC, Si 3 N 4, SiO 2, Si, or a SiC and / or Si 3 N 4 1 or upcoming selected from coated Si on the surface. In the case of having a fixed supporting member, the fixed supporting member portion is made of SiC, Si 3 N 4 , or SiC and / or
Alternatively, it is desirable to manufacture with Si coated with Si 3 N 4 . An example is shown in FIG. It is desirable that a notch is formed at the insertion position of the vacuum chuck in the wafer holder so that a wafer transfer device that suctions and transfers the back surface of the wafer by the vacuum chuck can be applied.
【００１９】このようなウェハ保持具は、半導体熱処理
炉に設けられた複数のウェハを支持、戴置するためのウ
ェハ保持装置に挿入され、水平に保持される。このウェ
ハ保持装置は、例えば図５に示すような、鉛直方向に３
本ないし４本の支柱２を有する縦形ボート１であり、こ
の場合、ウェハ保持具は、保持具用溝３に挿入される。
縦形ボートは、通常、ＳｉＣ、ＳｉＯ2又はＳｉによっ
て形成される。Such a wafer holder is inserted into a wafer holding device for supporting and mounting a plurality of wafers provided in a semiconductor heat treatment furnace, and is held horizontally. This wafer holding device is, for example, as shown in FIG.
This is a vertical boat 1 having four to four columns 2, in which case the wafer holder is inserted into the holder groove 3.
Vertical boats are usually made of SiC, SiO 2 or Si.
【００２０】ウェハ保持具がウェハ保持装置に水平に保
持された後、真空チャックを有するウェハ搬送装置によ
って、ウェハ１０が、その裏面を吸着され、切り欠き２
２の開口方向からウェハ保持具の上部に水平に搬入され
る。ウェハ１０が、ウェハ１０の中心とウェハ保持具２
１の略中心が鉛直方向に並ぶ位置まで水平に搬入される
と、真空チャックが垂直方向に下降する。これに伴っ
て、ウェハ１０も垂直方向に下降し、ここで真空チャッ
クによるウェハ吸着が解除されることにより、受け部材
を介してウェハ保持具上にウェハ１０が支持される。After the wafer holder is held horizontally by the wafer holder, the back surface of the wafer 10 is sucked by the wafer transfer device having a vacuum chuck, and the notch 2 is formed.
2 is horizontally carried into the upper part of the wafer holder from the opening direction. The center of the wafer 10 and the wafer holder 2
When the substantially center of 1 is carried in horizontally to a position aligned in the vertical direction, the vacuum chuck descends in the vertical direction. Along with this, the wafer 10 also moves down in the vertical direction, and the wafer suction by the vacuum chuck is released, whereby the wafer 10 is supported on the wafer holder via the receiving member.
【００２１】真空チャックは、その後切り欠き２２の開
口部から外部に引き出され、次の搬送動作に移る。この
ような搬送動作は、従来技術であるボートによるシリコ
ンウェハの直接支持でも採用されている方法である。こ
の方式は、特開２０００−９１４０６号公報に記載され
ているような、昇降ピンと自動搬送チャックとの組み合
わせで搬送を行う方式と比較して、保持具用溝３の間隔
を小さくとることが可能であり、生産性を損ねることが
ない。また、搬送機構も単純であるため、高速搬送が可
能であると同時に、搬送装置が大型化しにくい。After that, the vacuum chuck is pulled out from the opening of the notch 22 to move to the next transport operation. Such a transfer operation is a method which is also employed in direct support of a silicon wafer by a boat which is a conventional technique. This method can reduce the interval between the holder grooves 3 as compared with the method described in Japanese Patent Application Laid-Open No. 2000-91406, in which the transfer is performed by a combination of an elevating pin and an automatic transfer chuck. And does not impair productivity. In addition, since the transport mechanism is simple, high-speed transport is possible, and at the same time, the transport device is not easily increased in size.
【００２２】ウェハ１０が、上記の手順にしたがって、
複数の受け部材を介してウェハ保持具上に保持された
後、例えば縦形ボート１であるウェハ保持装置は、熱処
理炉内に設置された熱処理用チューブ内に導入され、引
き続き、所定の熱処理が実施される。熱処理の条件は処
理目的により様々であるが、その多くは縦形ボート１を
炉内に導入する際の待機時炉内温度が６００〜１０００
℃の範囲であり、そこから０．１〜２０℃／ｍｉｎ程度
の昇温速度にて炉内温度を上げ、６００〜１４００℃の
範囲で所定時間熱処理を行い、さらに０．１〜２０℃／
ｍｉｎ程度の降温速度にて待機時炉内温度に戻す処理と
なる。この際、炉内の雰囲気は、一般に、アルゴン、水
素、酸素、ＨＣｌ等やこれらの混合体である。According to the above procedure, the wafer 10 is
After being held on the wafer holder via the plurality of receiving members, the wafer holding device, for example, the vertical boat 1, is introduced into a heat treatment tube installed in a heat treatment furnace, and then a predetermined heat treatment is performed. Is done. The conditions of the heat treatment vary depending on the purpose of the treatment, but most of them have a furnace temperature of 600 to 1000 during standby when the vertical boat 1 is introduced into the furnace.
° C, from which the furnace temperature is increased at a rate of about 0.1 to 20 ° C / min, and heat treatment is performed for a predetermined time in the range of 600 to 1400 ° C.
This is a process of returning to the furnace temperature during standby at a temperature reduction rate of about min. At this time, the atmosphere in the furnace is generally argon, hydrogen, oxygen, HCl or the like, or a mixture thereof.
【００２３】なお、ウェハの熱処理には、縦形熱処理炉
による処理の他に、ウェハを炉内に導入後、急速に昇降
温を行う、急速熱アニール／酸化（Rapid Thermal Anne
aling / Oxidation：ＲＴＡ／ＲＴＯ）処理があり、本
発明に記載のウェハ保持具は、このＲＴＡ／ＲＴＯ処理
にも利用可能であることはいうまでもない。In the heat treatment of the wafer, in addition to the treatment in the vertical heat treatment furnace, rapid thermal annealing / oxidation (Rapid Thermal Annealing) is performed in which the temperature is rapidly raised and lowered after the wafer is introduced into the furnace.
aling / Oxidation (RTA / RTO) processing, and it goes without saying that the wafer holder according to the present invention can also be used for this RTA / RTO processing.
【００２４】熱処理を終えたウェハは、縦形ボート１と
ともに熱処理チューブから排出される。その後、真空チ
ャックを有するウェハ搬送装置が、上記に述べたウェハ
搬入手順の逆動作を行うことによって、ウェハ１０は、
ウェハ保持具２１の上部からウェハ保持具２１に形成さ
れた切り欠き２２の方向に水平に排出される。After the heat treatment, the wafer is discharged from the heat treatment tube together with the vertical boat 1. Thereafter, the wafer 10 having the vacuum chuck performs the reverse operation of the wafer loading procedure described above, so that the wafer 10
The wafer is discharged horizontally from the upper part of the wafer holder 21 toward the notch 22 formed in the wafer holder 21.
【００２５】[0025]
【実施例】以下に本発明の実施例を説明する。Embodiments of the present invention will be described below.
【００２６】（実験例）本発明のウェハ支持部材及び保
持具が、所望の効果を発揮するかを実験より確認した。
作製した支持部材は、図１に示したタイプのものであ
り、具体的には、上部構造体と下部構造体の材質がＳｉ
Ｃで、その形状は、直径１０ｍｍ、高さ５ｍｍ、曲率半
径５ｍｍの半球状、中間部構造体の材質が石英ガラス
で、その形状は、直径１０ｍｍ、高さ５ｍｍの円柱であ
る。これらを重ねて一体とした。また、この一体化した
支持部材とほぼ同じ大きさのＳｉＣ製の支持部材を作製
して使用した。ウェハ保持具は、図３に示すような円盤
を用いた。材質はＳｉＣを使用した。また、図５に示し
たような固定支持部材付き保持具も使用した。保持具の
大きさは、８インチ（２００ｍｍ）用が直径２２０ｍ、
１２インチ（３００ｍｍ）用が直径３２０ｍｍである。
支持部材は、保持具の中心からウェハ半径の７０％離れ
た位置、かつ、支持点が作る多角形が正多角形となるよ
うな位置に配置した。(Experimental Example) It was confirmed through experiments that the wafer support member and the holder of the present invention exhibited desired effects.
The produced supporting member is of the type shown in FIG. 1, and specifically, the material of the upper structure and the lower structure is Si.
In C, the shape is a hemisphere having a diameter of 10 mm, a height of 5 mm, and a radius of curvature of 5 mm, and the material of the intermediate structure is quartz glass. The shape is a cylinder having a diameter of 10 mm and a height of 5 mm. These were stacked and integrated. A support member made of SiC having substantially the same size as the integrated support member was prepared and used. As the wafer holder, a disk as shown in FIG. 3 was used. The material used was SiC. Further, a holder with a fixed support member as shown in FIG. 5 was also used. The size of the holder is 220 inches for 8 inches (200 mm),
The diameter for 12 inches (300 mm) is 320 mm.
The support member was placed at a position 70% of the wafer radius from the center of the holder and at a position where the polygon formed by the support points was a regular polygon.
【００２７】実験に用いたウェハは、８インチシリコン
ウェハ（直径２００ｍｍ）及び１２インチウェハ（直径
３００ｍｍ）である。熱処理パターンは１３９０℃で１
２時間のドライ酸化処理を行い、その時のスリップ発生
状況はＸ線トポグラフィを用いて調査した。The wafers used in the experiment were an 8-inch silicon wafer (200 mm in diameter) and a 12-inch wafer (300 mm in diameter). Heat treatment pattern is 1 at 1390 ° C
The dry oxidation treatment was performed for 2 hours, and the occurrence of slip at that time was investigated using X-ray topography.
【００２８】その結果を表１に示す。表中で、○はスリ
ップの発生がないこと、△は軽度のスリップがあるこ
と、×は重度のスリップがあることを示す。表１に示す
ように、比較例では、△かまたは×が多いのに対し、本
発明例では、全て○であり、本発明がスリップ防止に極
めて有効であることを示している。Table 1 shows the results. In the table, ○ indicates that no slip occurred, △ indicates that there was slight slip, and x indicates that there was severe slip. As shown in Table 1, in the comparative examples, there were many △ or ×, whereas in the examples of the present invention, all were ○, indicating that the present invention is extremely effective in preventing slip.
【００２９】[0029]
【表１】 [Table 1]
【００３０】[0030]
【発明の効果】以上説明したように、本発明によればシ
リコンウェハの熱処理、特にＳＩＭＯＸウェハやアニー
ルウェハの作製等の高温熱処理に適した、工業的に実現
可能な、かつ高価でないウェハ支持部材およびウェハ保
持具であり、シリコンウェハのスリップ発生を防止でき
るウェハ支持部材およびウェハ保持具を提供できる。さ
らに、本発明によれば、前記ウェハ保持具を搭載するこ
とにより高生産性を維持したまま、シリコンウェハのス
リップを防止できるウェハ保持装置を提供できる。As described above, according to the present invention, an industrially realizable and inexpensive wafer supporting member suitable for heat treatment of a silicon wafer, particularly for high-temperature heat treatment such as production of a SIMOX wafer or an annealed wafer. In addition, the present invention can provide a wafer support member and a wafer holder that can prevent a silicon wafer from slipping. Further, according to the present invention, it is possible to provide a wafer holding device capable of preventing a silicon wafer from slipping while maintaining high productivity by mounting the wafer holder.
【図面の簡単な説明】[Brief description of the drawings]
【図１】 本発明の支持部材の一実施形態を示す図FIG. 1 is a diagram showing one embodiment of a support member of the present invention.
【図２】 本発明の支持部材の別の実施形態を示す図FIG. 2 is a view showing another embodiment of the support member of the present invention.
【図３】 本発明の保持具の一実施形態を示す図FIG. 3 is a view showing an embodiment of the holder of the present invention.
【図４】 本発明の保持具の別の実施形態を示す図FIG. 4 is a view showing another embodiment of the holder of the present invention.
【図５】 ウェハ保持具が搭載され縦型ボートを示す図FIG. 5 is a view showing a vertical boat on which a wafer holder is mounted.
【図６】 従来技術のウェハ保持具を示す図FIG. 6 is a diagram showing a wafer holder according to the related art.
１…ボート ２…ボート支柱 ３…支持溝 ６…ウェハ保持板 ７…切り欠き １０…シリコンウェハ １１…ウェハ保持板 １２…シリコン球 ２１…支持部材の上部構造体 ２２…支持部材の中間部構造体 ２３…支持部材の下部構造体 ３１…ウェハ支持部材 ３２…ウェハ固定支持部材 DESCRIPTION OF SYMBOLS 1 ... Boat 2 ... Boat support 3 ... Support groove 6 ... Wafer holding plate 7 ... Notch 10 ... Silicon wafer 11 ... Wafer holding plate 12 ... Silicon sphere 21 ... Upper structure of support member 22 ... Intermediate structure of support member 23: Lower Structure of Support Member 31: Wafer Support Member 32: Wafer Fixed Support Member
───────────────────────────────────────────────────── フロントページの続き (72)発明者 林 俊一 千葉県富津市新富20−１ 新日本製鐵株式 会社技術開発本部内 (72)発明者 川村 啓介 千葉県富津市新富20−１ 新日本製鐵株式 会社技術開発本部内 Ｆターム(参考） 5F031 CA02 FA01 FA07 FA12 GA08 HA62 HA63 HA64 MA30 PA11 PA13 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Shunichi Hayashi 20-1 Shintomi, Futtsu-shi, Chiba Prefecture Nippon Steel Corporation Technology Development Division (72) Inventor Keisuke Kawamura 20-1 Shintomi, Futtsu-shi, Chiba New Japan F-term in the Technology Development Division of Steel Corporation (reference) 5F031 CA02 FA01 FA07 FA12 GA08 HA62 HA63 HA64 MA30 PA11 PA13
Claims (7)
を載せる支持部材であって、該支持部材が上部、中間
部、下部の３つの構造体からなり、少なくとも前記中間
部構造体の材質が、ウェハ熱処理温度で軟化する材質か
らなることを特徴とするウェハ支持部材。1. A support member disposed on a wafer holder and mounting a wafer on an upper portion, the support member comprising three structures of an upper portion, an intermediate portion, and a lower portion, and at least a material of the intermediate portion structure Is made of a material that softens at a wafer heat treatment temperature.
ウェハ又はウェハ保持具と点接触するような凸部形状を
有することを特徴とする請求項１記載のウェハ支持部
材。2. An upper and lower structure of the support member,
2. The wafer support member according to claim 1, wherein the wafer support member has a convex shape that makes point contact with the wafer or the wafer holder.
質が、ＳｉＣ、Ｓｉ 3Ｎ4、又は、表面にＳｉＣ及び／又
はＳｉ3Ｎ4を被覆したＳｉから選ばれたる１種、又は、
これらの組み合わせであることを特徴とする請求項１又
は２に記載のウェハ支持部材。3. The material of the upper and lower structures of the support member
Quality is SiC, Si ThreeNFourOr on the surface with SiC and / or
Is SiThreeNFourOne selected from Si coated with
Claim 1 or Claim 2 which is a combination of these.
3. The wafer support member according to 2.
であることを特徴とする請求項１〜３の何れか1項に記
載のウェハ支持部材。4. The wafer support member according to claim 1, wherein a material of the intermediate structure is quartz glass.
って、該保持具にウェハ受け部材がｎ個以上配置される
とともに、前記ウェハ受け部材のうち、少なくとも、
（ｎ−２）個（但し、ｎは４以上の整数）が、請求項１
〜４の何れか1項に記載のウェハ支持部材であることを
特徴するウェハ保持具。5. A plate-like holder for mounting a wafer on an upper surface, wherein at least n wafer receiving members are arranged on the holder, and at least one of the wafer receiving members is
2. The method according to claim 1, wherein (n-2) pieces (n is an integer of 4 or more).
5. A wafer holder, which is the wafer support member according to any one of items 4 to 4.
ｉ3Ｎ4、ＳｉＯ2、Ｓｉ、又は、表面にＳｉＣ及び／又
はＳｉ3Ｎ4を被覆したＳｉから選ばれたる１種であるこ
とを特徴とする請求項５記載のウェハ保持具。6. The material of the plate-like holder is SiC, S
i 3 N 4, SiO 2, Si, or, SiC and / or Si 3 wafer holder according to claim 5, wherein the N 4 is one upcoming selected from coated Si on the surface.
持装置であって、該保持装置の複数本略平行に配された
支柱に形成された複数の保持具用凹溝に、請求項５又は
６に記載のウェハ保持具を水平に挿入、保持してなるこ
とを特徴とするウェハ保持装置。7. A wafer holding device for supporting and mounting a plurality of wafers, wherein a plurality of holding device concave grooves formed on a plurality of substantially parallel columns of the holding device. Or a wafer holding device characterized by horizontally inserting and holding the wafer holding tool according to 6.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001042476A JP4589545B2 (en) | 2001-02-19 | 2001-02-19 | Wafer support member, wafer holder and wafer holding device |
| EP01974883A EP1253631B1 (en) | 2000-10-16 | 2001-10-16 | Wafer holder, wafer holding device, and heat treating furnace |
| KR10-2002-7007717A KR100469379B1 (en) | 2000-10-16 | 2001-10-16 | Wafer holder, wafer support member, wafer holding device, and heat treating furnace |
| DE60144045T DE60144045D1 (en) | 2000-10-16 | 2001-10-16 | WAFER BRACKET, WAFER BRACKET ARRANGEMENT AND HEAT TREATMENT OVEN |
| PCT/JP2001/009081 WO2002033743A1 (en) | 2000-10-16 | 2001-10-16 | Wafer holder, wafer support member, wafer holding device, and heat treating furnace |
| TW090125588A TW561571B (en) | 2000-10-16 | 2001-10-16 | A wafer holder, wafer support member, wafer boat and heat treatment furnace for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001042476A JP4589545B2 (en) | 2001-02-19 | 2001-02-19 | Wafer support member, wafer holder and wafer holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002246449A true JP2002246449A (en) | 2002-08-30 |
| JP4589545B2 JP4589545B2 (en) | 2010-12-01 |
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ID=18904765
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001042476A Expired - Fee Related JP4589545B2 (en) | 2000-10-16 | 2001-02-19 | Wafer support member, wafer holder and wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4589545B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101027A (en) * | 2003-09-22 | 2005-04-14 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| JP2008166763A (en) * | 2006-12-27 | 2008-07-17 | Siltron Inc | Wafer supporting pin capable of preventing slip dislocation in heat treating of wafer and heat treating method of wafer |
| JP2009147383A (en) * | 2009-03-26 | 2009-07-02 | Hitachi Kokusai Electric Inc | Heat treatment method |
| JP2012528479A (en) * | 2009-05-29 | 2012-11-12 | シュミット テクノロジー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Stacking or transporting multiple flat substrates or transport apparatus and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163444A (en) * | 1992-11-27 | 1994-06-10 | Oki Electric Ind Co Ltd | Wafer thermal treatment method and guard ring structure used therefor |
| JPH06333914A (en) * | 1993-03-24 | 1994-12-02 | Sumitomo Metal Ind Ltd | Semiconductor manufacturing device |
| JPH08236515A (en) * | 1995-03-01 | 1996-09-13 | Tokyo Electron Ltd | Heat treatment device |
| JPH0992625A (en) * | 1995-09-20 | 1997-04-04 | Tokyo Electron Ltd | Boat for heat treatment |
| JPH09129567A (en) * | 1995-10-30 | 1997-05-16 | N T T Electron Technol Kk | Wafer support structure of vertical wafer boat |
| JPH10284429A (en) * | 1997-03-31 | 1998-10-23 | Sumitomo Sitix Corp | Wafer supporting device |
| JP2000091406A (en) * | 1998-09-08 | 2000-03-31 | Mitsubishi Materials Silicon Corp | Wafer holder |
| JP2000150402A (en) * | 1998-11-09 | 2000-05-30 | Shin Etsu Handotai Co Ltd | Substrate supporting jig |
-
2001
- 2001-02-19 JP JP2001042476A patent/JP4589545B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163444A (en) * | 1992-11-27 | 1994-06-10 | Oki Electric Ind Co Ltd | Wafer thermal treatment method and guard ring structure used therefor |
| JPH06333914A (en) * | 1993-03-24 | 1994-12-02 | Sumitomo Metal Ind Ltd | Semiconductor manufacturing device |
| JPH08236515A (en) * | 1995-03-01 | 1996-09-13 | Tokyo Electron Ltd | Heat treatment device |
| JPH0992625A (en) * | 1995-09-20 | 1997-04-04 | Tokyo Electron Ltd | Boat for heat treatment |
| JPH09129567A (en) * | 1995-10-30 | 1997-05-16 | N T T Electron Technol Kk | Wafer support structure of vertical wafer boat |
| JPH10284429A (en) * | 1997-03-31 | 1998-10-23 | Sumitomo Sitix Corp | Wafer supporting device |
| JP2000091406A (en) * | 1998-09-08 | 2000-03-31 | Mitsubishi Materials Silicon Corp | Wafer holder |
| JP2000150402A (en) * | 1998-11-09 | 2000-05-30 | Shin Etsu Handotai Co Ltd | Substrate supporting jig |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101027A (en) * | 2003-09-22 | 2005-04-14 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| JP2008166763A (en) * | 2006-12-27 | 2008-07-17 | Siltron Inc | Wafer supporting pin capable of preventing slip dislocation in heat treating of wafer and heat treating method of wafer |
| JP2009147383A (en) * | 2009-03-26 | 2009-07-02 | Hitachi Kokusai Electric Inc | Heat treatment method |
| JP2012528479A (en) * | 2009-05-29 | 2012-11-12 | シュミット テクノロジー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Stacking or transporting multiple flat substrates or transport apparatus and method |
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|---|---|
| JP4589545B2 (en) | 2010-12-01 |
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