JP2001168175A - Substrate holding fitting for heat treatment, substrate heat treatment apparatus, and method for thermally treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a vertical boat for heat treatment which can avoid generation of a surface defect called a slip in heat treatment steps of semiconductor substrate (silicon wafer) oxidization, CVD, annealing, etc. SOLUTION: A vertical heat treatment boat 1 is obtained by polishing a silicon wafer support part to a grain particle roughness of #800 or more, chamfering and then annealing it. Or two or more smooth projections are provided to the support part. Further, the vertical heat treatment boat is manufactured vertically symmetrically.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment substrate holder (quartz vertical heat treatment) used for mounting a substrate such as a semiconductor substrate (silicon wafer) and inserting it into a substrate heat treatment apparatus (such as a vertical heat treatment furnace). And a heat treatment method for a substrate.

[0002]

2. Description of the Related Art Semiconductor devices such as MOS LSIs and bipolar LSIs are manufactured through many heat treatment processes such as an oxidation process, a CVD process, and a diffusion process. At this time, when a vertical semiconductor heat treatment apparatus is used, it is mounted on a vertical heat treatment boat made of quartz or SiC and inserted into a reaction tube of the vertical heat treatment apparatus. This vertical heat treatment boat can be mounted at appropriate intervals in the vertical direction while keeping a number of silicon ways horizontal.

[0003] The general structure of this vertical heat treatment boat is composed of a circular top plate and a bottom plate, and three or more columns connecting them. The pillars are provided with silicon wafer supporting portions at intervals larger than the thickness of the silicon wafer, and may have a plate-like or rod-like shape, or a shape in which a groove is directly cut into the pillar. The vertical heat treatment apparatus mounts a silicon wafer on a vertical heat treatment boat, inserts the silicon wafer into a furnace, and heat-treats the silicon wafer at a temperature of, for example, 1000 ° C. In particular, temperature control is performed so that thermal stress transition (slip) does not occur in a heat treatment exceeding 1050 ° C.

In some cases, the shape of the vertical heat treatment boat is different from that used at 1050 ° C. or lower (hereinafter referred to as low-temperature specification) and higher (hereinafter referred to as high-temperature specification). The low temperature type has a structure that supports the wafer peripheral portion at three or more locations. High-temperature specifications include those that support about two-thirds of the radius from the center to the outer periphery of the wafer at three or more places, those that support a plate, and those that support the periphery of the wafer in a ring shape. A boat that supports two-thirds of the radius from the center to the outer periphery at three or more places from the center of the wafer to the outer periphery is more commonly used for silicon wafers with a diameter of 300 mm. ing.

[0005]

The size of a Si wafer has been increasing with the progress of semiconductor manufacturing technology. What used to be 200mm in diameter is now 300mm
Some are 400mm. When heat treatment is performed by a vertical heat treatment boat corresponding to these wafers, the wafer support point digs into the back surface of the wafer due to the weight of the wafer even in a temperature region where thermal stress transition (slip) does not occur. When heat treatment is applied, there is a problem that slip occurs on the wafer starting from the scratch. The present inventors tried various shapes, but the heat treatment temperature was 900 ° C.
The occurrence of slip was observed in the treatment for 1 hour or more.

There is also a type in which the wafer is supported by a surface, but the temperature distribution changes in a portion in contact with the wafer, resulting in poor uniformity of the oxide film. In addition, a large amount of material is required, the structure becomes complicated, and the manufacturing cost increases. Eliminating these drawbacks is a priority, and a vertical heat treatment boat with a small contact area with the wafer is often selected if slippage occurs to some extent.

At a temperature of 1050 ° C. or more, a vertical heat treatment boat made of quartz is deformed, so a vertical heat treatment boat made of SiC (silicon carbide) is used. There is also the problem of doubling. In recent years, the device design rules have become finer and the heat treatment temperature has been lowered accordingly, and the maximum operating temperature is 1050.
It is extremely uneconomical to apply SiC only to this process because the temperature is lower than the high-purity quartz strain point (1120 ° C or higher) of 1100 ° C or 1100 ° C.

[0008]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and therefore, a heat-treating substrate holder (a vertical type) which is effective in suppressing occurrence of slip of a substrate (wafer). Heat treatment boat, etc.), and a heat treatment method for the substrate thereby.

According to a first aspect of the present invention, there is provided a heat treatment substrate holder comprising a plurality of sets of supports for horizontally supporting a placed substrate, wherein the support is in contact with the substrate. The contact point of the curved surface is formed.

[0010] The substrate holder for heat treatment according to claim 2 comprises:
In the support member made of a polygonal plate member supporting a substrate, a corner portion of the plate member was dropped, a peripheral portion was chamfered, the surface was polished, and fire polishing was performed to form a support surface. It is characterized by the following.

According to a third aspect of the present invention, there is provided a heat treatment substrate holder.
A semi-spherical projection having a smooth surface is formed on the supporting portion to form a contact point with the substrate.

According to a fourth aspect of the present invention, there is provided a heat treatment substrate holder.
In a heat treatment substrate holder provided with a plurality of sets of support portions for supporting a mounted substrate in a horizontal direction, a curved surface contact point that contacts a substrate is formed on both upper and lower surfaces of the support portion. Can be supported at the contact points of the curved surface.

According to a fifth aspect of the present invention, there is provided a heat treatment substrate holder.
In the supporting member made of a polygonal plate member supporting a substrate, the corners of the plate member are dropped, the peripheral edges of both upper and lower surfaces are chamfered, the surface is polished, and fire polishing is performed. Is formed.

According to a sixth aspect of the present invention, there is provided a heat treatment substrate holder.
It is characterized in that hemispherical projections having smooth surfaces are formed on both upper and lower surfaces of the support portion to form contact points with the substrate.

According to a seventh aspect of the present invention, there is provided a heat treatment substrate holder.
The support portion is formed in a shell shape having a horizontal longitudinal direction.

[0016] The heat-treating substrate holder according to claim 8 comprises:
The support portion is formed in a shape of a rotating body whose diameter decreases as it goes away from the substantially central portion in the longitudinal direction.

According to a ninth aspect of the present invention, there is provided a heat treatment substrate holder.
A plurality of supporting portions, a plurality of supporting columns for mounting the supporting portions, and side plates on both sides for fixing the supporting columns, and these are configured to be vertically symmetrical so that they can be used upside down. It is assumed that.

According to a tenth aspect of the present invention, there is provided a substrate heat treatment apparatus comprising the heat treatment substrate holder according to any one of the above items.

[0019] The heat treatment method for a substrate according to claim 11 is as follows.
A substrate heat treatment apparatus is provided with the heat treatment substrate holder according to any of the above items, and the substrate heat treatment is performed by periodically inverting the substrate holder for heat treatment.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 The inventors of the present application performed various experiments as a stage before the present invention was conceived. First, this will be described.
FIG. 8 is a schematic perspective view of a conventional low-temperature vertical boat for heat treatment used by the inventors of the present invention in an experiment. In FIG. 8, 1 is a wafer support fin (support portion), 2 is a top plate, 3
Denotes a boat support, 4 denotes a bottom plate, and 8 denotes a boat positioning hole.

Using such a vertical heat treatment boat,
Focusing on the support portion of the wafer, the occurrence of slip due to the difference in the structure and manufacturing method was examined. The processing conditions are as follows. The diffusion furnace is VF-5700, a high-speed heating and cooling type manufactured by Koyo Thermo System. The sample wafer is 300mm diameter device grade manufactured by Mitsubishi Materials Corporation. 1000 ℃ N2
Atmosphere After heat treatment for one hour, an X-ray topo system manufactured by Rigaku Denki was used for measurement of slip.

A plurality of wafer supporting fins 1 are polished on polishing meshes having different numbers, and are divided into those to be chamfered and those not to be chamfered.
Went about everything. Then, the resulting maximum slip length was measured. The wafer support fin number indicates the number of stages of the vertical heat treatment boat from below the wafer support fins. The conditions and results are summarized below.

[0023]

[Table 1]

From the above experimental results, it can be seen that the wafer support fins 1 chamfered and chamfered with the polishing mesh 800 have a small maximum slip length and are good for suppressing the slip.

The following experiment was conducted to confirm this effect. The equipment and sample used are the same and the processing temperature
950 ° C N2 atmosphere Heat treatment was performed for 1 hour. The results are as follows.

[0026]

[Table 2]

Under the condition where the position of the wafer supporting fins was at the sixth stage, it was confirmed that no slip occurred in the treatment at 950 ° C. for 1 hour.

In order to confirm the case where the heat treatment time is further extended at 950 ° C. for 2 hours, a support having a structure in which the corners of the support portions are dropped from the one having the structure of the sixth stage is prepared, and this is used as the seventh stage. Heat treatment was performed at 2 ° C. for 2 hours. The results are shown below.

[0029]

[Table 3]

As can be seen from the results, it was possible to prevent a 300 mm wafer from generating a slip even at a temperature of 950 ° C. for 2 hours by cutting the corners of the sixth stage structure.

Next, the occurrence of wafer slip will be described with reference to the drawings. FIG. 10 is a view showing a relationship between a conventional vertical heat treatment boat of a low temperature specification and a position at which a wafer slips, FIG. 11 is a cross-sectional view showing a state of contact between a silicon wafer and a wafer support, and FIG. FIG. 4 is a cross-sectional view showing a state of supporting a silicon wafer in FIG.

FIG. 10 shows the state of occurrence of slip when the heat treatment temperature is 1000 ° C. and the treatment time is 1 hour in the first stage support portion (wafer support fin 1) of the vertical heat treatment boat of low temperature specification. It can be seen that the wafer support fins 1 are in contact with the silicon wafer at three locations, and that the locations where the slips occur also occur from locations corresponding to both ends of each wafer support fin 1.

To explain this further, as shown in FIG. 11, the silicon wafer 9 before the heat treatment is in close contact with the wafer supporting fins 1, but when the temperature rises, the contact portions of the silicon wafer 9 by their own weights as shown in FIG. Then, the silicon wafer 9 bends. FIG. 12 is a cross-sectional view in the direction perpendicular to the diameter, but it can be seen that it also bends in the diameter direction. In other words, in the temperature range where slippage occurs, the support fin 1
It can be seen that the wafer 9 is supported only at the corners at both ends.

If the finally supported portion has an acute angle, slipping is likely to occur, and this portion is chamfered and baked. Alternatively, if the corners are further dropped and baked, the final contact portion becomes smoother, and it can be seen that the occurrence of slip can be suppressed.

From the above experiments and considerations, the inventors of the present application came up with the present invention as described in the following embodiments. Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a substrate heat treatment holder (boat) according to Embodiment 1 of the present invention. As a specific example, this is a quartz vertical heat treatment boat used for mounting a semiconductor substrate (silicon wafer) and inserting it into a vertical heat treatment furnace.

In FIG. 1, 1 is a wafer support fin (support portion), 2 is a top plate, 3 is a boat support, and 4 is a bottom plate. In this example, the boat support 3 is welded on the bottom plate 4. The bottom plate 4 is provided with cuts (not shown) and small holes (not shown) for positioning. In this embodiment, the number of the boat supports 3 is three, but in the present invention, the number of the boat supports 3 is not limited. The boat support 3 is welded to the top plate 2 at the upper part. Further, a wafer supporting fin 1 for supporting a wafer is cut or welded to the column 3.

FIG. 2 is an enlarged view of the support fin 1 as viewed from a cross section of the boat shown in FIG. 1 along a line AB. In this embodiment, the surface of the support fin 1 is polished with a grain of mesh # 800 or more. Thereafter, both corners 5 of the wafer supporting fin 1 are cut off, and the periphery 6 is chamfered. Finally, fire polish.

As described above, in the heat treatment substrate holder of this embodiment, a plurality of support portions 1 (wafer support fins) for horizontally supporting a mounted substrate (wafer) at a plurality of support points are provided. A contact point at which the support portion 1 comes into contact with the substrate is formed on a smooth curved surface.

Further, in the case where the supporting portion 1 is made of a polygonal plate member for supporting the substrate (see FIG. 2), the corners of the plate member are dropped, the peripheral edge is chamfered, the surface is polished, and
A support surface is formed by performing fire polishing. More specifically, the support portion 1 for holding the wafer of the vertical heat treatment boat is polished with a mesh # 800 or more, chamfered, rounded, fire-polished and smoothed. The order in which the corners of the plate member are dropped, the chamfering of the peripheral portion, and the polishing of the surface may be performed in reverse order, but fire polishing is performed last.

According to this embodiment, in a vertical heat treatment boat of a low temperature specification which supports a peripheral portion of a wafer, there is an effect of suppressing occurrence of a slip of a wafer.

Embodiment 2 First, consideration of experiments by the present inventors will be described. As described above with reference to FIGS. 11 and 12, the silicon wafer 9 before the heat treatment is in close contact with the wafer supporting fins 1 (FIG. 11), but the contact portions 1 each have their own weight whose temperature increases. Then, the silicon wafer 9 bends (FIG. 12). At this time, it can be seen that the wafer 9 is supported only at the corners at both ends of the support fin 1.
As described above, since only two points of the wafer supporting fins 1 hold the wafer at the time of high temperature, it is necessary to attach two or more smooth spherical projections 7 to each wafer supporting fin from the beginning as shown in FIG. Thereby, occurrence of slip can be suppressed.

Next, a second embodiment of the present invention conceived based on such considerations will be described. FIG. 3 is a partially enlarged view of the substrate heat treatment holder (boat) according to the second embodiment of the present invention. As a specific example, this is a structure of a wafer support portion of a vertical heat treatment boat made of quartz used for mounting a semiconductor substrate (silicon wafer) and inserting it into a vertical heat treatment furnace.

In FIG. 3, reference numeral 7 denotes a wafer supporting fin 1
5 shows a smooth spherical projection formed on the upper surface of the (wafer supporting portion). As shown in FIG. 3, in this example, the spherical projection 7
Are provided on one support portion. The two spherical projections 7 are provided on the upper surface of the wafer supporting fin 1 along the circumferential direction of the wafer. In other words, two are provided in the direction perpendicular to the radial direction of the silicon wafer. It is preferable that two or more spherical projections 7 are provided on the upper surface of one wafer support fin 1. When the temperature of the wafer becomes high, the wafer is thermally deformed. The surface of the spherical projection 7 may be polished or fire-polished to smooth the surface as necessary in the first embodiment.

As described above, in the heat treatment substrate holder of this embodiment, a heat treatment substrate holder provided with a plurality of sets of the support portions 1 for horizontally supporting the placed substrate at a plurality of support points. A hemispherical projection 7 having a smooth surface is formed on the support portion 1 to form a contact point with the substrate.

In this manner, in a low-temperature vertical boat for heat treatment supporting the peripheral portion of the wafer, occurrence of wafer slip can be suppressed.

Third Embodiment FIGS. 4A and 4B are partially enlarged perspective views of a wafer supporting portion of a heat treatment substrate holder according to a third embodiment of the present invention. The wafer support 1 shown in FIG. 4 (a) is manufactured in a vertically symmetric manner by chamfering the plate portion 6 and removing the corners 5 on both sides of the upper and lower surfaces of the wafer support fin 1 in the first embodiment.

Further, the wafer support 1 shown in FIG.
In this embodiment, spherical projections 7 having a smooth surface provided in the second embodiment are provided on both sides of the wafer supporting fin 1, and a vertical heat treatment boat is manufactured in a vertically symmetric manner.

As described above, in this embodiment, in the heat treatment substrate holder provided with a plurality of sets of the support portions 1 for horizontally supporting the placed substrate at a plurality of support points, On both surfaces, the support portion 1 forms a curved contact point where it contacts the substrate so that the substrate can be supported at the contact point on the curved surface even when the substrate is turned upside down.

When the supporting portion 1 is made of a polygonal plate member for supporting a substrate, the corners of the plate member are dropped, the upper and lower peripheral edges are chamfered, the surface is polished, and fire polishing is performed. Was formed. In addition,
The order of cutting off the corners of the plate member, chamfering the peripheral edge, and polishing the surface may be reversed, but fire polishing is performed last.

Further, a hemispherical projection 7 having a smooth surface was formed on both upper and lower surfaces of the support portion 1 to form a contact point with the substrate.

According to this, in a vertical heat treatment boat of a low temperature specification which supports the peripheral portion of the wafer, the effect of suppressing the occurrence of the slip of the wafer is exerted. Also,
The wafer support fins 1 (wafer support portions) of the vertical heat treatment boat are vertically symmetrically formed and used while being periodically inverted, so that they can be used for a long time.

Embodiment 4 The inventors of the present application conducted other experiments as a stage before conceiving still another invention of the present application. First, this will be described. FIG. 9 is a schematic perspective view of a conventional high-temperature vertical boat for heat treatment. In FIG. 9, 2 is a top plate, 3 is a boat support, 4 is a bottom plate, 8 is a boat positioning hole, 9 is Si
The reference numeral 10 denotes a wafer support bar, and 11 denotes a wafer contact portion. Note that the wafer support bar 10 and the wafer contact portion 11 are combined to form a wafer support 1D.

FIG. 7 is a perspective view showing a vertical high-temperature heat treatment boat used in this experiment. In FIG. 7, 2 is a top plate, 3 is a boat support, 4 is a bottom plate, 7 is a smooth spherical projection, 8 is a boat positioning hole, and 10 is a wafer support rod. The spherical projection 7 and the wafer support rod 10 are combined to form a wafer support 1C.

In a vertical heat treatment boat of a high temperature specification as shown in FIG. 9, slip occurred at a heat treatment temperature of 1000 ° C. for 37 minutes. The wafer contact portion 11 of this vertical heat treatment boat was a rectangle of about 3 mm × 1.5 mm.
A vertical heat treatment boat having the same structure as that of the vertical heat treatment boat is made of quartz, and the wafer contact portion 11 is melted and changed into a smooth spherical shape, thereby producing an experimental vertical heat treatment boat shown in FIG. did.

Using this, heat treatment was carried out as follows to examine the occurrence of slip. That is, the processing temperature 95
0 to 1050 ° C. N2 atmosphere Heat treatment was performed for 1 or 2 hours.

[0056]

[Table 4]

As can be seen from the above experimental results, 1000 ° C.
No slip occurs even if the heat treatment for 2 hours is repeated twice.

Embodiment 4 of the present invention conceived from the above experiments and considerations will be described. FIG. 5 shows a substrate heat treatment holder (boat) according to Embodiment 4 of the present invention. This is a specific example of a semiconductor substrate (silicon wafer)
This is a vertical heat treatment boat made of quartz which is used for loading into a vertical heat treatment furnace for high temperature treatment. In FIG. 5, 2 is a top plate, 3 is a boat support, 4 is a bottom plate, 8 is a boat positioning hole, and 12 is a wafer support rod (wafer support portion).

The wafer support rod 12 is formed in a shape like a shell. The wafer supporting rod 12 thus formed smoothly contacts the silicon wafer. In other words, the form described as a shell shape may be referred to as a shape of a rotating body whose diameter decreases as it goes away from the substantially central portion in the longitudinal direction. Further, in this example, the whole of the substrate heat treatment holder (boat) is formed to be vertically symmetrical. Positioning holes 8 are attached to the top plate 2 and the bottom plate 4, respectively.

As described above, in the heat treatment substrate holder according to this embodiment, the heat treatment substrate holder provided with a plurality of sets of support portions 12 for horizontally supporting the mounted substrate at a plurality of support points. In the above, the support portion 12 is formed on both upper and lower surfaces of the support portion 12 with a curved contact point where the support portion 12 contacts the substrate, so that the substrate can be supported at the above-mentioned curved contact point even when the support portion 12 is turned upside down.

The support portion 12 is formed in a shell shape whose horizontal direction is horizontal. In addition, the support portion 12 is formed in the shape of a rotating body whose diameter decreases as it goes away from the substantially central portion in the longitudinal direction.

According to this embodiment, the effect of suppressing the occurrence of wafer slip can be obtained in a low-temperature vertical boat for heat treatment that supports the peripheral portion of the wafer. Further, the wafer support fins 1 (wafer support portions) of the vertical heat treatment boat are formed symmetrically in the vertical direction, and are used while being periodically inverted, so that they can be used for a long time.

Embodiment 5 First, consideration will be started. As shown in FIG. 9, the high-temperature vertical boat for heat treatment has a support portion (wafer support rod 10) extending therefrom. The vertical heat treatment boat of high temperature specification shown in FIG. 7 used in the experiment by the inventors of the present invention was made of quartz.
It was confirmed that when the heat treatment was performed at 10 ° C. for 10 hours, the tip of the wafer support rod 10 was lowered by about 1 mm. Post 3
Are reinforced and no deformation has been confirmed. However, it was also confirmed that a vertical heat treatment boat made of quartz of this shape with a high temperature specification could be used for a long time if it was prepared vertically symmetrically and inverted periodically.

A fifth embodiment of the present invention conceived from the above experiments and considerations will be described. FIG. 6 shows a substrate heat treatment holder (boat) according to Embodiment 5 of the present invention. This is a specific example of a semiconductor substrate (silicon wafer)
This is a vertical heat treatment boat made of quartz which is used for loading into a vertical heat treatment furnace for high temperature treatment. 6, reference numeral 2 denotes a top plate, 3 denotes a boat support, 4 denotes a bottom plate, 7 denotes a smooth spherical projection, 8 denotes a boat positioning hole, and 10 denotes a wafer support rod. The spherical projection 7 and the wafer support rod 10 are combined to form a wafer support 1B.

In this example, smooth spherical projections 7 for supporting a wafer are provided at substantially the target positions on both the upper and lower surfaces of the tip of the wafer support bar 10. That is, in this example, in the vertical heat treatment boat of the high-temperature specification used in the experiment this time, shown in FIG.

As described above, in the substrate holder for heat treatment according to this embodiment, the plurality of supports 1B, the plurality of columns 3 for mounting the supports, and the side plates 2 and 4 on both sides for fixing the columns. And these are made to be vertically symmetrical so that they can be used upside down.

As a heat treatment method for the substrate, the substrate heat treatment apparatus is provided with the heat treatment substrate holder according to this embodiment, and the heat treatment of the substrate can be performed by periodically inverting the heat treatment substrate holder. . According to this, in a vertical heat treatment boat of a high temperature specification that supports the peripheral portion of the wafer, it is effective in suppressing the occurrence of the slip of the wafer. In addition, by this method, the vertical heat treatment boat made of quartz that can withstand the heat treatment at 1100 ° C. can be manufactured symmetrically up and down, and can be used for a long time by being periodically inverted.

In the above embodiments, silicon wafers, quartz mold heat treatment boats and the like have been described as specific examples, but the present invention is not limited to these. The present invention can be applied to other substrates, other substrate holders, and other substrate heat treatment apparatuses.

[0069]

As described above, according to the present invention, the occurrence of slip due to the weight of the substrate can be minimized in the substrate holder for heat treatment. Furthermore, a heat treatment substrate holder that can be used for a long time even at a high temperature can be obtained. Therefore, in the manufacture of semiconductor devices and the like, there is an effect that a high-quality device can be manufactured economically.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a vertical heat treatment boat according to Embodiment 1 of the present invention.

FIG. 2 is a plan view of the wafer support portion according to the first embodiment as viewed from a cross-sectional direction of AB in FIG. 1;

FIG. 3 is a partially enlarged perspective view of a wafer support portion of a vertical heat treatment boat according to a second embodiment of the present invention.

FIG. 4 is a partially enlarged perspective view of a wafer support portion of a vertical heat treatment boat according to a third embodiment of the present invention.

FIG. 5 is a schematic perspective view of a vertical heat treatment boat according to a fourth embodiment of the present invention.

FIG. 6 is a schematic perspective view of a vertical heat treatment boat according to a fifth embodiment of the present invention.

FIG. 7 is a schematic perspective view of a high-temperature vertical boat for heat treatment used in an experiment according to the present invention.

FIG. 8 is a schematic perspective view of a conventional low-temperature vertical boat for heat treatment.

FIG. 9 is a schematic perspective view of a conventional high-temperature vertical boat for heat treatment.

FIG. 10 is a view showing a relationship between a vertical heat treatment boat of a low temperature specification and a position where a wafer slip occurs in a conventional technique.

FIG. 11 is a sectional view showing a state of contact between a silicon wafer and a wafer support.

FIG. 12 is a cross-sectional view showing how a silicon wafer is supported at a high temperature.

FIG. 13 is a cross-sectional view showing a supporting portion that makes smooth contact with a silicon wafer at a high temperature.

[Explanation of symbols]

1, 1A, 1B, 1C, 1D support part (wafer support fin), 2 top plate, 3 boat support, 4 bottom plate,
5 corner (each drop), 6 circumference (chamfer), 7 smooth spherical projection, 8 boat positioning hole, 9Si wafer (substrate), 10 wafer support rod, 11 wafer contact part, 12 wafer support rod.

[Procedure amendment]

[Submission date] July 6, 2000 (200.7.6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

[0009] heat-treating the substrate holder according to claim 1 of the present invention, a plurality of sets comprising a thermal treatment substrate holder supporting portion for supporting the substrate placed in a horizontal direction, one of the supporting
Two or more projections are formed on the upper surface of the holding portion to be in contact with the substrate.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010] The substrate holder for heat treatment according to claim 2 comprises:
The projection is a hemispherical projection .

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

According to a third aspect of the present invention, there is provided a heat treatment substrate holder.
Two or more protrusions formed on the upper surface of the one support part
Are provided along the circumferential direction of the mounted substrate .

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Ikuo Katsura 2-14-8 Nihonbashi Kakigara-cho, Chuo-ku, Tokyo F-term (reference) 5F031 CA02 FA01 HA63 HA64 HA65 MA28 MA30 PA18 PA20

Claims (11)

[Claims] 1. A heat treatment substrate holder having a plurality of sets of supports for supporting a mounted substrate in a horizontal direction, wherein the support has a curved contact point for contacting the substrate. Substrate holder for heat treatment. 2. The method according to claim 1, wherein the supporting portion is formed of a polygonal plate member for supporting the substrate, wherein the corner portion of the plate member is dropped, the peripheral edge is chamfered, the surface is polished, and fire polishing is performed. The substrate holder for heat treatment according to claim 1, wherein a support surface is formed. 3. The substrate holder for heat treatment according to claim 1, wherein two or more hemispherical projections having a smooth surface are formed on each of said support portions to form contact points with the substrate. 4. A heat treatment substrate holder having a plurality of sets of supports for supporting a mounted substrate in a horizontal direction, wherein a curved point of contact with the substrate is formed on both upper and lower surfaces of the support. A substrate holder for heat treatment, wherein the substrate can be supported at the contact point of the curved surface even when the substrate is inverted. 5. The apparatus according to claim 1, wherein said supporting portion comprises a polygonal plate member for supporting a substrate. 5. The heat-treating substrate holder according to claim 4, wherein the supporting surface is formed by performing. 6. The heat-treating substrate holder according to claim 4, wherein hemispherical projections having smooth surfaces are formed on upper and lower surfaces of the support portion to form contact points with the substrate. 7. The heat-treating substrate holder according to claim 1, wherein the support portion is formed in a shell shape having a horizontal horizontal direction. 8. The heat-treating substrate holder according to claim 1, wherein said support portion is formed in a shape of a rotating body whose diameter decreases as it goes away from a substantially central portion in the longitudinal direction. 9. It is provided with a plurality of supporting portions, a plurality of columns for mounting the supporting portions, and side plates on both sides for fixing the columns, and these are configured to be vertically symmetrical and can be used upside down. The substrate holder for heat treatment according to any one of claims 4 to 8, wherein: 10. A substrate heat treatment apparatus comprising the substrate holder for heat treatment according to claim 1. 11. A substrate heat treatment apparatus comprising: the heat treatment substrate holder according to claim 4; and performing heat treatment on the substrate by periodically inverting the heat treatment substrate holder. Characteristic heat treatment method for a substrate.