JP4584074B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4584074B2
JP4584074B2 JP2005249293A JP2005249293A JP4584074B2 JP 4584074 B2 JP4584074 B2 JP 4584074B2 JP 2005249293 A JP2005249293 A JP 2005249293A JP 2005249293 A JP2005249293 A JP 2005249293A JP 4584074 B2 JP4584074 B2 JP 4584074B2
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Prior art keywords
film
semiconductor
layer
light
semiconductor film
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JP2005249293A
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JP2006100809A (ja
JP2006100809A5 (enExample
Inventor
理 中村
淳子 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005249293A priority Critical patent/JP4584074B2/ja
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Publication of JP2006100809A5 publication Critical patent/JP2006100809A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005249293A 2004-08-31 2005-08-30 半導体装置の作製方法 Expired - Fee Related JP4584074B2 (ja)

Priority Applications (1)

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JP2005249293A JP4584074B2 (ja) 2004-08-31 2005-08-30 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004252464 2004-08-31
JP2005249293A JP4584074B2 (ja) 2004-08-31 2005-08-30 半導体装置の作製方法

Publications (3)

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JP2006100809A JP2006100809A (ja) 2006-04-13
JP2006100809A5 JP2006100809A5 (enExample) 2008-09-18
JP4584074B2 true JP4584074B2 (ja) 2010-11-17

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JP2005249293A Expired - Fee Related JP4584074B2 (ja) 2004-08-31 2005-08-30 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210413A (ja) * 2005-01-25 2006-08-10 Sharp Corp 投影マスクならびに半導体デバイスの製造方法および製造装置
JP5207296B2 (ja) * 2008-07-08 2013-06-12 岩谷産業株式会社 腐刻方法
CN119216874B (zh) * 2024-09-14 2025-09-30 哈尔滨工业大学 一种γ辐照诱导Sn基钎料表面纳米晶氧化层及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356637A (ja) * 2003-05-07 2004-12-16 Fumimasa Yo 薄膜トランジスタ及びその製造方法

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JP2006100809A (ja) 2006-04-13

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