JP4575154B2 - 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 - Google Patents

多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 Download PDF

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Publication number
JP4575154B2
JP4575154B2 JP2004513847A JP2004513847A JP4575154B2 JP 4575154 B2 JP4575154 B2 JP 4575154B2 JP 2004513847 A JP2004513847 A JP 2004513847A JP 2004513847 A JP2004513847 A JP 2004513847A JP 4575154 B2 JP4575154 B2 JP 4575154B2
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Prior art keywords
layer
template
pattern
substrate
patterning
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Expired - Fee Related
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JP2004513847A
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Japanese (ja)
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JP2005530338A (ja
JP2005530338A5 (OSRAM
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ピー． マンシーニ、デイビッド
ジェイ． レズニック、ダグラス
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NXP USA Inc
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NXP USA Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
JP2004513847A 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 Expired - Fee Related JP4575154B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/174,464 US6852454B2 (en) 2002-06-18 2002-06-18 Multi-tiered lithographic template and method of formation and use
PCT/US2003/017549 WO2003107094A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Publications (3)

Publication Number Publication Date
JP2005530338A JP2005530338A (ja) 2005-10-06
JP2005530338A5 JP2005530338A5 (OSRAM) 2006-07-20
JP4575154B2 true JP4575154B2 (ja) 2010-11-04

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Family Applications (1)

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JP2004513847A Expired - Fee Related JP4575154B2 (ja) 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法

Country Status (6)

Country Link
US (1) US6852454B2 (OSRAM)
JP (1) JP4575154B2 (OSRAM)
KR (1) KR101018519B1 (OSRAM)
CN (1) CN1662852B (OSRAM)
AU (1) AU2003243384A1 (OSRAM)
WO (1) WO2003107094A1 (OSRAM)

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US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US20040224261A1 (en) * 2003-05-08 2004-11-11 Resnick Douglas J. Unitary dual damascene process using imprint lithography
US20050018296A1 (en) * 2003-07-24 2005-01-27 Asml Holding Nv Diffractive optical element and method of making same
WO2005025748A1 (en) * 2003-09-17 2005-03-24 Nanocomms Patents Limited Microstructure devices and their production
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7939131B2 (en) 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
CN100395121C (zh) * 2004-11-19 2008-06-18 鸿富锦精密工业（深圳）有限公司 热压印方法
TWI307419B (en) * 2004-12-27 2009-03-11 Au Optronics Corp Method of preparing reflective substrate and liquid crystal display device comprising the reflective substrate preparing by the same
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
CN101505974A (zh) * 2005-09-07 2009-08-12 凸版光掩膜公司 用来制作双波纹结构的光掩模及其形成方法
JP4889316B2 (ja) * 2005-09-12 2012-03-07 学校法人東京理科大学 ３次元構造物の製造方法、３次元構造物、光学素子、ステンシルマスク、微細加工物の製造方法、及び微細パターン成形品の製造方法。
US20100215909A1 (en) * 2005-09-15 2010-08-26 Macdonald Susan S Photomask for the Fabrication of a Dual Damascene Structure and Method for Forming the Same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007266193A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd インプリント用の型部材とその作製方法、およびこれらに用いられる積層基板
DE102006030267B4 (de) * 2006-06-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Nano-Einprägetechnik mit erhöhter Flexibilität in Bezug auf die Justierung und die Formung von Strukturelementen
WO2008097278A2 (en) * 2006-09-19 2008-08-14 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
JP2011501874A (ja) * 2007-09-14 2011-01-13 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓ製造において使用されるエッチングプロセス
CN101809499B (zh) 2007-09-27 2012-10-10 Hoya株式会社 掩模坯体以及压印用模具的制造方法
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TWI493598B (zh) * 2007-10-26 2015-07-21 Applied Materials Inc 利用光阻模板遮罩的倍頻方法
JP5343345B2 (ja) * 2007-10-31 2013-11-13 凸版印刷株式会社 パターン形成方法、インプリントモールド、フォトマスク
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US8114331B2 (en) 2008-01-02 2012-02-14 International Business Machines Corporation Amorphous oxide release layers for imprint lithography, and method of use
US8029716B2 (en) * 2008-02-01 2011-10-04 International Business Machines Corporation Amorphous nitride release layers for imprint lithography, and method of use
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JP5453616B2 (ja) 2010-04-16 2014-03-26 Ｈｏｙａ株式会社 インプリント用モールドの製造方法
US9586811B2 (en) * 2011-06-10 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with moving members and methods for making the same
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JP5619939B2 (ja) * 2013-03-01 2014-11-05 株式会社日立ハイテクノロジーズ パターン転写方法
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KR102329363B1 (ko) * 2015-04-20 2021-11-19 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 대면적 다단 나노구조의 제조
JP6638493B2 (ja) * 2016-03-17 2020-01-29 大日本印刷株式会社 多段構造体を有するテンプレートの製造方法
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Also Published As

Publication number Publication date
KR101018519B1 (ko) 2011-03-03
CN1662852A (zh) 2005-08-31
CN1662852B (zh) 2010-10-27
AU2003243384A1 (en) 2003-12-31
WO2003107094A1 (en) 2003-12-24
US20030232252A1 (en) 2003-12-18
JP2005530338A (ja) 2005-10-06
KR20050021980A (ko) 2005-03-07
US6852454B2 (en) 2005-02-08

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