JP4566182B2 - 周波数混合器 - Google Patents
周波数混合器 Download PDFInfo
- Publication number
- JP4566182B2 JP4566182B2 JP2006340270A JP2006340270A JP4566182B2 JP 4566182 B2 JP4566182 B2 JP 4566182B2 JP 2006340270 A JP2006340270 A JP 2006340270A JP 2006340270 A JP2006340270 A JP 2006340270A JP 4566182 B2 JP4566182 B2 JP 4566182B2
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- signal
- terminal
- noise
- frequency mixer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003321 amplification Effects 0.000 claims description 33
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 33
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000006872 improvement Effects 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 15
- 230000007423 decrease Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
D ドレイン端子
G ゲート端子
S ソース端子
B バックゲート
C キャパシタ
Claims (3)
- MOSFETのゲート端子とバックゲートがキャパシタを介して連結され、
前記MOSFETの増幅度及び雑音度を向上させるために前記MOSFETのゲート端子及びバックゲートの双方に電流源を連結し、信号を同時に供給するようにし、
前記信号は、局部発振器LO信号であり、
前記MOSFETのバックゲートに印加された信号は、バックゲート電圧を経時変化するように印加させ、
前記MOSFETのゲート端子に印加される局部発振器LO信号と前記MOSFETのソース端子に印加される高周波RF信号とを結合し、その周波数差と和に該当する中間周波数IFを前記MOSFETのドレイン端子を介して生成し、
ゲート端子の入力信号の電圧変化に応じて、しきい電圧を変化させるMOSFETの増幅度及び雑音度改善回路を備えたことを特徴とする周波数混合器。 - 前記MOSFETは、P型MOSFETであることを特徴とする請求項1に記載の周波数混合器。
- 前記MOSFETは、N型MOSFETであることを特徴とする請求項1に記載の周波数混合器。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060071187A KR100827893B1 (ko) | 2006-07-28 | 2006-07-28 | 모스 전계효과 트랜지스터의 증폭도 및 잡음도 개선회로 및이를 이용한 주파수 혼합기, 증폭기 및 발진기 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008035466A JP2008035466A (ja) | 2008-02-14 |
JP4566182B2 true JP4566182B2 (ja) | 2010-10-20 |
Family
ID=38985564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006340270A Expired - Fee Related JP4566182B2 (ja) | 2006-07-28 | 2006-12-18 | 周波数混合器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7420418B2 (ja) |
JP (1) | JP4566182B2 (ja) |
KR (1) | KR100827893B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004051550A1 (en) * | 2002-12-02 | 2004-06-17 | The Trustees Of Columbia University In The City Ofnew York | Mosfet parametric amplifier |
KR100643768B1 (ko) * | 2005-07-01 | 2006-11-10 | 삼성전자주식회사 | 믹서 |
TW200908540A (en) * | 2007-08-02 | 2009-02-16 | Univ Nat Central | Wideband cascade mixer |
US8050644B1 (en) * | 2007-12-18 | 2011-11-01 | Hrl Laboratories, Llc | Highly linear mixer and method for cancelling FET channel resistance modulation |
TW200931791A (en) * | 2008-01-03 | 2009-07-16 | Univ Nat Central | Method of third-order transconductance cancellation and high-linearity mixer thereof |
EP2983289B1 (en) | 2009-10-23 | 2018-03-28 | Telefonaktiebolaget LM Ericsson (publ) | Passive mixer with reduced second order intermodulation |
GB2492009B (en) | 2010-03-01 | 2017-02-22 | T-Data Systems (S) Pte Ltd | A memory card |
KR101693124B1 (ko) * | 2015-11-11 | 2017-01-17 | 한양대학교 산학협력단 | 캐패시티브 궤환 정합을 이용한 저잡음 증폭기 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003078355A (ja) * | 2001-09-05 | 2003-03-14 | Mitsubishi Electric Corp | ミキサ回路 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3390314A (en) * | 1964-10-30 | 1968-06-25 | Rca Corp | Semiconductor translating circuit |
US3436621A (en) * | 1966-12-16 | 1969-04-01 | Texas Instruments Inc | Linear amplifier utilizing a pair of field effect transistors |
US5192920A (en) * | 1992-03-18 | 1993-03-09 | Eastman Kodak Company | High-sensitivity, low-noise transistor amplifier |
JPH07191768A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Corp | 電流発生回路 |
JPH10209854A (ja) * | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | ボディ電圧制御型半導体集積回路 |
JP3715066B2 (ja) * | 1997-03-25 | 2005-11-09 | 三菱電機株式会社 | 電流モードロジック回路 |
JPH11317628A (ja) * | 1998-05-07 | 1999-11-16 | Mitsubishi Electric Corp | 増幅回路 |
US6362665B1 (en) * | 1999-11-19 | 2002-03-26 | Intersil Americas Inc. | Backwards drivable MOS output driver |
US6642795B2 (en) * | 2002-02-11 | 2003-11-04 | Texas Instruments Incorporated | Fast recovery time precision amplifier |
KR100699832B1 (ko) * | 2005-01-05 | 2007-03-27 | 삼성전자주식회사 | Mtcmos 제어 회로 |
-
2006
- 2006-07-28 KR KR1020060071187A patent/KR100827893B1/ko not_active IP Right Cessation
- 2006-12-18 JP JP2006340270A patent/JP4566182B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-10 US US11/651,809 patent/US7420418B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003078355A (ja) * | 2001-09-05 | 2003-03-14 | Mitsubishi Electric Corp | ミキサ回路 |
Also Published As
Publication number | Publication date |
---|---|
US7420418B2 (en) | 2008-09-02 |
KR20080010747A (ko) | 2008-01-31 |
JP2008035466A (ja) | 2008-02-14 |
US20080024223A1 (en) | 2008-01-31 |
KR100827893B1 (ko) | 2008-05-07 |
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