JP4565365B2 - 放射加熱装置及びその方法 - Google Patents

放射加熱装置及びその方法 Download PDF

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Publication number
JP4565365B2
JP4565365B2 JP22915799A JP22915799A JP4565365B2 JP 4565365 B2 JP4565365 B2 JP 4565365B2 JP 22915799 A JP22915799 A JP 22915799A JP 22915799 A JP22915799 A JP 22915799A JP 4565365 B2 JP4565365 B2 JP 4565365B2
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Japan
Prior art keywords
temperature
reflector
workpiece
temperature gradient
cylindrical
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Expired - Fee Related
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JP22915799A
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English (en)
Japanese (ja)
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JP2000068223A5 (enExample
JP2000068223A (ja
Inventor
ペネロン ジョエル
ギル カルドーソ アンドレ
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アクセリス テクノロジーズ インコーポレーテッド
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Publication of JP2000068223A5 publication Critical patent/JP2000068223A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Resistance Heating (AREA)
JP22915799A 1998-08-17 1999-08-13 放射加熱装置及びその方法 Expired - Fee Related JP4565365B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US134865 1998-08-17
US09/134,865 US6023555A (en) 1998-08-17 1998-08-17 Radiant heating apparatus and method

Publications (3)

Publication Number Publication Date
JP2000068223A JP2000068223A (ja) 2000-03-03
JP2000068223A5 JP2000068223A5 (enExample) 2006-07-20
JP4565365B2 true JP4565365B2 (ja) 2010-10-20

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ID=22465368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22915799A Expired - Fee Related JP4565365B2 (ja) 1998-08-17 1999-08-13 放射加熱装置及びその方法

Country Status (3)

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US (1) US6023555A (enExample)
EP (1) EP0981153A3 (enExample)
JP (1) JP4565365B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6294394B1 (en) * 1999-07-01 2001-09-25 Voyan Technology Ramp rate limiter to control stress during ramping
US6947665B2 (en) * 2003-02-10 2005-09-20 Axcelis Technologies, Inc. Radiant heating source with reflective cavity spanning at least two heating elements
KR100807120B1 (ko) * 2006-11-21 2008-02-27 코닉시스템 주식회사 급속열처리 장치
JP5077198B2 (ja) 2008-11-13 2012-11-21 ウシオ電機株式会社 光照射装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
US4891499A (en) * 1988-09-09 1990-01-02 Texas Instruments Incorporated Method and apparatus for real-time wafer temperature uniformity control and slip-free heating in lamp heated single-wafer rapid thermal processing systems
WO1991010873A1 (en) * 1990-01-19 1991-07-25 G-Squared Semiconductor Corporation Heating apparatus for semiconductor wafers or substrates
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
CA2081055C (en) * 1991-11-05 1999-12-21 John R. Eppeland Method and apparatus for heat treatment of metal parts utilizing infrared radiation
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5504831A (en) * 1993-11-10 1996-04-02 Micron Semiconductor, Inc. System for compensating against wafer edge heat loss in rapid thermal processing
US5561612A (en) * 1994-05-18 1996-10-01 Micron Technology, Inc. Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine
US5740314A (en) * 1995-08-25 1998-04-14 Edison Welding Institute IR heating lamp array with reflectors modified by removal of segments thereof
JP3972379B2 (ja) * 1995-12-14 2007-09-05 信越半導体株式会社 加熱炉
ATE215998T1 (de) * 1996-05-21 2002-04-15 Applied Materials Inc Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand

Also Published As

Publication number Publication date
US6023555A (en) 2000-02-08
EP0981153A2 (en) 2000-02-23
EP0981153A3 (en) 2003-08-20
JP2000068223A (ja) 2000-03-03

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