JP4564755B2 - 集積化された能動的光デバイス及び光検出器 - Google Patents

集積化された能動的光デバイス及び光検出器 Download PDF

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JP4564755B2
JP4564755B2 JP2003585190A JP2003585190A JP4564755B2 JP 4564755 B2 JP4564755 B2 JP 4564755B2 JP 2003585190 A JP2003585190 A JP 2003585190A JP 2003585190 A JP2003585190 A JP 2003585190A JP 4564755 B2 JP4564755 B2 JP 4564755B2
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region
band gap
electrical terminal
optically active
optical
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Japanese (ja)
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JP2005522885A (ja
JP2005522885A6 (ja
JP2005522885A5 (enExample
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ナイダ，スティーブン
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Intense Ltd
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Intense Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2003585190A 2002-04-10 2003-04-03 集積化された能動的光デバイス及び光検出器 Expired - Fee Related JP4564755B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US0208211.3 2002-04-10
GB0208211A GB2387481B (en) 2002-04-10 2002-04-10 Integrated active photonic device and photodetector
PCT/GB2003/001461 WO2003088367A2 (en) 2002-04-10 2003-04-03 Integrated active photonic device and photodetector

Publications (4)

Publication Number Publication Date
JP2005522885A JP2005522885A (ja) 2005-07-28
JP2005522885A6 JP2005522885A6 (ja) 2005-11-04
JP2005522885A5 JP2005522885A5 (enExample) 2006-05-25
JP4564755B2 true JP4564755B2 (ja) 2010-10-20

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JP2003585190A Expired - Fee Related JP4564755B2 (ja) 2002-04-10 2003-04-03 集積化された能動的光デバイス及び光検出器

Country Status (5)

Country Link
US (1) US7251407B2 (enExample)
EP (1) EP1493191A2 (enExample)
JP (1) JP4564755B2 (enExample)
GB (1) GB2387481B (enExample)
WO (1) WO2003088367A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2387481B (en) 2002-04-10 2005-08-31 Intense Photonics Ltd Integrated active photonic device and photodetector
CN100544141C (zh) * 2005-03-17 2009-09-23 中国科学院半导体研究所 应用微波光子晶体共面波导的高速光电子器件封装结构
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
JP4352337B2 (ja) * 2005-09-16 2009-10-28 ソニー株式会社 半導体レーザおよび半導体レーザ装置
US7343061B2 (en) * 2005-11-15 2008-03-11 The Trustees Of Princeton University Integrated photonic amplifier and detector
US8238388B2 (en) * 2006-09-20 2012-08-07 The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Tunable laser device and a method for producing light of respective selectable wavelengths
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
DE102007026925A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung
DE102011111604B4 (de) * 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
US8975715B2 (en) * 2011-09-14 2015-03-10 Infineon Technologies Ag Photodetector and method for manufacturing the same
US8916873B2 (en) 2011-09-14 2014-12-23 Infineon Technologies Ag Photodetector with controllable spectral response
DE102012103549B4 (de) * 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
JP2014236161A (ja) * 2013-06-04 2014-12-15 古河電気工業株式会社 半導体光素子およびその製造方法ならびに集積型半導体光素子
CN110235250B (zh) * 2017-02-03 2021-08-20 华为技术有限公司 光电转换装置
US11075503B2 (en) * 2019-07-02 2021-07-27 Microsoft Technology Licensing, Llc Integrated inter-cavity photodetector for laser power and threshold estimation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPH06105820B2 (ja) * 1985-12-25 1994-12-21 国際電信電話株式会社 モニタ付分布帰還形半導体レ−ザ
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
US5040033A (en) * 1989-06-26 1991-08-13 At&T Bell Laboratories Optical amplifier-photodetector assemblage
US5252513A (en) * 1990-03-28 1993-10-12 Xerox Corporation Method for forming a laser and light detector on a semiconductor substrate
US5134671A (en) * 1990-08-03 1992-07-28 At&T Bell Laboratories Monolithic integrated optical amplifier and photodetector
US5287376A (en) * 1992-12-14 1994-02-15 Xerox Corporation Independently addressable semiconductor diode lasers with integral lowloss passive waveguides
US5491712A (en) * 1994-10-31 1996-02-13 Lin; Hong Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
CN1125358C (zh) * 1995-08-03 2003-10-22 松下电器产业株式会社 光学装置及光纤组件
JP4902044B2 (ja) * 1999-09-24 2012-03-21 シャープ株式会社 半導体レーザ装置、光伝送装置、光伝送システム、電子機器、制御装置、接続コネクタ、通信装置、ならびに光伝送方法、データ送受信方法
DE10023956A1 (de) 2000-05-16 2001-11-22 Bosch Gmbh Robert Halbleiter-Leistungsbauelement
WO2001088993A2 (en) * 2000-05-19 2001-11-22 Mcmaster University A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES
JP2002026451A (ja) * 2000-07-10 2002-01-25 Mitsubishi Chemicals Corp 半導体光デバイス装置
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers
US6628686B1 (en) * 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
GB2387481B (en) 2002-04-10 2005-08-31 Intense Photonics Ltd Integrated active photonic device and photodetector

Also Published As

Publication number Publication date
GB0208211D0 (en) 2002-05-22
JP2005522885A (ja) 2005-07-28
GB2387481B (en) 2005-08-31
EP1493191A2 (en) 2005-01-05
WO2003088367A2 (en) 2003-10-23
GB2387481A (en) 2003-10-15
US7251407B2 (en) 2007-07-31
WO2003088367A8 (en) 2005-01-13
US20050230722A1 (en) 2005-10-20
WO2003088367A3 (en) 2004-05-27

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