JP4535825B2 - Pressure detection device package and pressure detection device - Google Patents

Description

  The present invention relates to a pressure detection device package and a pressure detection device used in a pressure detection device for detecting pressure.

  Conventionally, a capacitance type pressure detection device is known as a pressure detection device for detecting pressure. As this capacitance-type pressure detection device, for example, a pressure sensor in which a silicon chip having a diaphragm structure is bonded to a glass pedestal is known (for example, see Patent Document 1).

  Further, as shown in the cross-sectional view of the pressure detection device in FIG. 7, a ceramic material or a resin material having a first surface and a second surface facing each other, and a diaphragm portion 12 formed on the first surface side. The insulating base 11, the movable electrode 13 formed on the surface of the diaphragm 12, the wiring conductor (electrode) 15 formed around the diaphragm 12 on the first surface of the insulating base 11, and the movable electrode 13 2. Description of the Related Art A semiconductor device is used that includes a flip chip type semiconductor element 16 having fixed electrodes 17 facing each other and bumps 18 formed on the surface of the semiconductor element 16 and bonded to a plurality of wiring conductors 15.

  In such a pressure detection device, the movable electrode 13 and the fixed electrode 17 form a capacitance, and when an external pressure is applied, the diaphragm portion 12 bends and the movable electrode 13 and the fixed electrode 17 are interposed. The pressure detector is made to function as a pressure-sensitive element that detects the amount of change in capacitance formed, and is integrated with the semiconductor element 16 for calculating the amount of change, thereby reducing the size of the pressure detection device. The wiring conductor 15 that connects the movable electrode 13 for pressure detection and the fixed electrode 17 to each electrode of the semiconductor element 13 can be shortened, and there is no need to generate between the plurality of wiring conductors 15. The static capacitance can be made small.

  In addition, since the movable electrode 13 and the fixed electrode 17 need to form a certain space region in order to form an electrostatic capacity, the movable electrode 13 and the fixed electrode 17 are formed on the outer periphery of the insulating base 11 or the semiconductor element 16 and inside the semiconductor element 16. Bumps 18 are formed and bonded to the wiring conductor 15 formed on the first surface of the insulating substrate 11.

  In addition, the semiconductor element 16 is made of germanium (Ge), selenium (Se), silicon (Si) or the like as a base material, and a plurality of electrodes (not shown) formed inside thereof and to which the bumps 18 are joined are made of aluminum (not shown). It is formed so as to be connected to the internal circuit pattern by a metal material such as Al) or copper (Cu), and a part of it is connected to the fixed electrode 17 for forming capacitance by a predetermined circuit pattern. Yes. This circuit pattern functions as a conductive path between the semiconductor element 16 and the external electric circuit via the wiring conductor 15 of the insulating base 11.

  A plating layer such as nickel (Ni) and gold (Au) is deposited on the surface of the electrode, circuit pattern, and fixed electrode 17 by an electroless plating method, and Au or lead (Pb) -tin ( Sn) Bumps 18 made of solder or the like are formed.

  Such a circuit pattern is formed to a predetermined thickness (0.5 to 1.5 μm) by employing a conventionally well-known thin film forming technique, specifically, sputtering, photolithography technique, etching technique, etc. On the electrode, for example, Ni, Au, etc. are sequentially deposited by adopting a conventionally known electroless plating or the like in order to improve the bonding with the bump and prevent the oxidative corrosion of the fixed electrode 17. .

  The bumps 18 of the semiconductor element 16 are ultrasonically flip-chip bonded to the wiring conductor 15 plated with gold or the like of the insulating substrate 11. The ultrasonic flip chip bonding is an ultrasonic flip chip method in which bonding is performed by pressurization and ultrasonic oscillation for about 0.5 seconds in a room temperature condition.

The wiring conductor 15 and the movable electrode 13 for forming capacitance are made of metal powder metallization such as tungsten (W), molybdenum (Mo), copper (Cu), silver (Ag), etc., and suitable for metal powder such as W. A metallized paste obtained by adding and mixing an organic binder, a solvent, a plasticizer, and a dispersant is printed and applied in a predetermined pattern on a ceramic green sheet for the insulating substrate 11 by a conventionally known screen printing method or the like. By firing together with the green ceramic molded body, a predetermined pattern is formed inside and on the surface of the insulating substrate 11. The exposed surface of the wiring conductor 15 is Ni-plated with a thickness of about 1 to 10 μm in order to prevent the wiring conductor 15 from being oxidized and corroded and to improve the bonding between the wiring conductor 15 and the bumps 18. It is preferable that the layer and the Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.
Japanese Patent Laid-Open No. 11-23398

  However, if the insulating base 11 is downsized in accordance with the recent demand for downsizing of the pressure detection device package, the capacitance forming region by the movable electrode 13 and the fixed electrode 17 becomes smaller, and the movable electrode 13 and the fixed electrode 17 The amount of change in capacitance detected by the method becomes small, and the detection sensitivity has been lowered. Therefore, in order to prevent this decrease in sensitivity, it is necessary to reduce the distance between the movable electrode 13 and the fixed electrode 17. When the distance between the movable electrode 13 and the fixed electrode 17 is reduced, the bumps 18 of the semiconductor element 16 are not formed. Since the height is low and the distance between adjacent bumps 18 is narrow and the size of the bumps 18 is small, an external force applied to the semiconductor element 16 inadvertently at the time of sealing or transporting the package, When thermal stress or the like due to a difference in thermal expansion between the semiconductor element 16 and the insulating base 11 acts on the bump 18 during the operation of the element 16, the bump 18 does not work to absorb such external force or thermal stress. There was a problem that the bumps 18 were removed from the insulating substrate 11 without being able to relieve external force and thermal stress.

  The present invention has been devised in view of the above-described problems of the prior art, and has an object of being small in size, having high detection sensitivity of pressure applied from the outside, and capable of being accurately detected over a long period of time. The object is to provide a high pressure sensing device package and a pressure sensing device.

  The package for a pressure detection device of the present invention has an insulating base having a first surface and a second surface facing each other, and a diaphragm portion formed on the first surface side, and is formed on the surface of the diaphragm portion. A movable electrode and a plurality of electrodes formed around the diaphragm portion of the first surface of the insulating base so as to be positioned on the inner side of the insulating base from the surface of the diaphragm portion, Further, the plurality of conductor bumps of the flip-chip type semiconductor element in which the fixed electrode and the plurality of conductor bumps facing the movable electrode are joined to the plurality of electrodes.

  In the pressure sensing device package according to the present invention, preferably, the plurality of wiring conductors are formed on a bottom surface of a recess formed around the diaphragm portion of the first surface of the insulating base. And

  The package for a pressure detection device according to the present invention is preferably characterized in that a plurality of the recesses of the insulating base are formed corresponding to each of the plurality of conductor bumps of the semiconductor element.

  4. The pressure detection device package according to claim 2, wherein the depth of the concave portion is smaller than the thickness of the diaphragm portion.

  The pressure detection device package according to the present invention is preferably characterized in that the diaphragm portion of the insulating base is joined to a support portion formed on the first surface of the insulating base. .

  The pressure detection device of the present invention has the pressure detection device package of the present invention and a conductor bump joined to the electrode on the surface, and covers the diaphragm portion on the insulating base of the pressure detection device package. A pressure detection device comprising: a mounted flip chip type semiconductor element; and a fixed electrode formed in a region facing the movable electrode on the surface of the semiconductor element.

  The pressure detection device of the present invention is preferably characterized in that a sealing member that covers the semiconductor element is provided on the first surface of the insulating base.

  According to the pressure detecting device package of the present invention, the insulating base having the first surface and the second surface facing each other and having the diaphragm portion formed on the first surface side, and formed on the surface of the diaphragm portion. And a plurality of electrodes formed so as to be positioned on the inner side of the insulating base from the surface of the diaphragm portion around the diaphragm portion of the first surface of the insulating base, and facing the movable electrode on the surface Since the plurality of conductor bumps of the flip chip type semiconductor element on which the fixed electrode and the plurality of conductor bumps are formed are joined to the plurality of electrodes, the movable electrode formed on the surface of the diaphragm portion and the surface of the semiconductor element Even when the distance from the formed fixed electrode is narrowed, when the conductor bump of the semiconductor element is bonded to the electrode, the height of the conductor bump is higher than the first surface of the insulating substrate. Since the height to the electrode is increased, the external force applied to the semiconductor element inadvertently when the package is sealed or transported to the semiconductor element, or the difference in thermal expansion between the semiconductor element and the insulating substrate during operation of the semiconductor element. Even if the resulting thermal stress or the like acts on the conductor bump, the conductor bump can effectively absorb the external force or thermal stress, and the external force or thermal pressure can be reduced. As a result, even if the distance between the movable electrode and the fixed electrode becomes narrow, it is possible to increase the bonding strength between the conductor bump of the semiconductor element and the electrode, and to improve the connection reliability. In addition, the distance between the movable electrode and the fixed electrode can be narrowed, and the capacitance value can be increased to increase the sensitivity of capacitance detection by the semiconductor element.

  According to the pressure detection device package of the present invention, preferably, the plurality of electrodes are formed on the bottom surface of the recess formed around the diaphragm portion on the first surface of the insulating base. Even if the distance between the movable electrode formed on the surface and the fixed electrode formed on the surface of the semiconductor element becomes narrow, the height of the conductor bump of the semiconductor element is lower than the first surface of the insulating base. Therefore, the external force applied to the semiconductor element inadvertently at the time of sealing or transporting the package to the semiconductor element, or between the semiconductor element and the insulating substrate during the operation of the semiconductor element is increased. Even if a thermal stress or the like due to a difference in thermal expansion acts on the conductor bump, the conductor bump can effectively absorb the external force or thermal stress, and the external force or thermal pressure can be relaxed. Furthermore, the electrodes are formed around the diaphragm portion, and the stray capacitance with respect to the movable electrode for detecting capacitance and the fixed electrode can be reduced.

  According to the pressure sensing device package of the present invention, preferably, the plurality of recesses of the insulating base are formed corresponding to each of the plurality of conductor bumps of the semiconductor element. In addition to being positioned, the amount of conductor bumps in the recesses can be made uniform, so that variations in height of the conductor bumps can be effectively prevented. In addition, external forces and thermal stresses acting on the conductor bumps of the semiconductor element can be dispersed and relaxed on the inner walls of the respective recesses.

  According to the package for a pressure detection device of the present invention, preferably, the depth of the recess is smaller than the thickness of the diaphragm, so that the mechanical strength of the insulating base between the diaphragm and the inner wall of the recess is increased. Even if the movable electrode bends toward the fixed electrode due to external force or thermal stress acting on the diaphragm part, it is cracked between the diaphragm part and the concave part due to the stress generated between the diaphragm part and the concave part. Can be effectively prevented.

  According to the pressure sensing device package of the present invention, it is preferable that the diaphragm portion of the insulating base is formed by being joined to the support portion formed on the first surface of the insulating base. Bump height can be increased, and external stress is applied to the semiconductor element during package sealing and transportation, etc., and thermal stress due to thermal expansion difference from the insulating substrate during operation of the semiconductor element Even if this works, the external force and thermal pressure can be relaxed by working so that the external force and thermal stress are effectively absorbed by the conductor bumps. As a result, the bonding strength between the conductor bump and the electrode of the semiconductor element is increased, and the connection reliability can be improved. In addition, the distance between the movable electrode and the fixed electrode can be reduced, and the capacitance value can be increased.

  The pressure device of the present invention is a flip chip having a package for the pressure detection device of the present invention and a conductor bump bonded to an electrode on the surface and mounted on the insulating base of the package for the pressure detection device so as to cover the diaphragm portion. Type semiconductor element and a fixed electrode formed in a region facing the movable electrode on the surface of the semiconductor element. And it can be detected well.

  Since the pressure device of the present invention is provided with the sealing member that covers the semiconductor element on the first surface of the insulating base, the semiconductor element is hermetically sealed, and the package for the pressure detection device is characterized over a long period of time. And the external pressure can be accurately and satisfactorily detected with high reliability.

  Next, the pressure detection device package and the pressure detection device of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing an example of an embodiment of a pressure detection device package according to the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a diaphragm portion, 3 is a movable electrode, 4 is a recess, Is a wiring conductor (electrode). 4 is a cross-sectional view showing an example of an embodiment of the pressure detection device of the present invention (the same parts as those in FIG. 1 are denoted by the same reference numerals), 6 is a semiconductor element, 7 is a fixed electrode, and 8 is a bump. (Conductor bump).

  The insulating base 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic. When such an insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, a plasticizer, and a dispersant suitable for ceramic raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. Is added to and mixed to make a mud-like shape, and this is formed into a sheet shape by a conventionally known doctor blade method or the like to obtain a plurality of ceramic green sheets. It is manufactured by subjecting it to lamination processing, cutting processing and the like and laminating it vertically to form a green ceramic molded body, which is fired at a temperature of about 1600 ° C.

  In addition, a movable electrode 3 for forming a capacitance is attached to the surface of the diaphragm 2 at the center of the first surface (upper surface in FIG. 1) of the insulating substrate 1, and the movable electrode 3 includes a plurality of wirings. A part of the conductor 5 and the electrode of the semiconductor element 6 are electrically connected via the bump 8.

  Further, the insulating base 1 has a first surface and a second surface facing each other, the diaphragm portion 2 is formed on the first surface side, and a hole whose bottom surface is the lower surface side of the diaphragm portion 2 is the second. The portion sandwiched between the bottom surface of the hole and the first surface is the diaphragm portion 2 (the lower surface in FIG. 1).

  The diaphragm portion 2 has a low mechanical strength when the thickness is less than 0.01 mm, and is easily destroyed when an external pressure of, for example, about 80 kPa is applied thereto. Further, when the thickness of the diaphragm portion 2 exceeds 5 mm, for example, it becomes difficult to bend at a pressure of about 2000 kPa, and the accuracy as the pressure detecting diaphragm portion is likely to be lowered. Therefore, the thickness of the diaphragm part 2 is preferably in the range of 0.01 to 5 mm.

  In addition, the movable electrode 3 on the surface of the diaphragm portion 2 is formed in, for example, a circular shape, and is opposed so as to form a space between the fixed electrode 7 described later, and on the semiconductor element 6 side according to the pressure applied from the outside. It functions as a so-called pressure-sensitive element.

  A plurality of recesses 4 are formed around the diaphragm portion 2 corresponding to each of the plurality of bumps 8 of the semiconductor element 6, and a wiring conductor 5 to which the bumps 8 are joined to the bottom surface of the recess 4 is led out. The wiring conductor 5 and the bump 8 are bonded to each other, whereby each electrode of the semiconductor element 3 and each wiring conductor 5 are electrically connected. At this time, the wiring conductor 5 also functions as a conductive path with the external electric circuit.

  The holes and recesses 4 of the insulating substrate 1 are punched into a predetermined shape by the punching die so as to become holes and recesses 4 in the above-described ceramic green sheet, and thereafter, laminating, cutting, etc. In addition, the green ceramic molded body is formed by laminating the upper and lower layers, and this is fired at a temperature of about 1600 ° C.

  The movable electrode 3 and the wiring conductor 5 described above are made of metal powder metallization such as W, Mo, Cu, and Ag, and an appropriate organic binder, solvent, plasticizer, dispersant, and the like are added to the metal powder such as W and mixed. The metallized paste thus obtained is printed and applied in a predetermined pattern on a ceramic green sheet for the insulating substrate 1 by a conventionally known screen printing method, and is fired together with a green ceramic molded body for the insulating substrate 1, thereby insulating substrate 1 Is formed in a predetermined pattern on the inside and on the surface. It should be noted that the exposed surfaces of the movable electrode 3 and the wiring conductor 5 have a thickness in order to prevent the movable electrode 3 and the wiring conductor 5 from being oxidatively corroded and to improve the bonding between the wiring conductor 5 and the bumps 8. It is preferable that a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited.

  The semiconductor element 6 is for calculating pressure from the amount of change in capacitance, and is formed of Ge, Se, Si, etc. as a base material, and is formed on the inside thereof, and a plurality of electrodes to which the bumps 8 are bonded. (Not shown) is formed so as to be connected to the internal circuit pattern by a metal material such as Al or Cu, and a part thereof is connected to the fixed electrode 7 for forming the capacitance by a predetermined circuit pattern. ing. This circuit pattern functions as a conductive path between the semiconductor element 6 and the external electric circuit via the wiring conductor 5 of the insulating base 1.

  A plating layer such as nickel Ni and Au is deposited on the surface of the electrode, circuit pattern, and fixed electrode 7 by electroless plating, and bumps 8 made of Au, Pb-Sn solder, or the like are formed on the upper surface. ing.

  Such a circuit pattern is formed to a predetermined thickness (0.5 to 1.5 μm) by employing a conventionally well-known thin film forming technique, specifically, sputtering, photolithography technique, etching technique, etc. For example, Ni, Au, etc. are sequentially deposited on the electrode by using a well-known electroless plating or the like in order to improve the bonding with the bump 8 and prevent the oxidative corrosion of the fixed electrode 7. Yes.

  Further, the semiconductor element 6 has a flat plate shape such as a square shape or a circular shape, and a bump 8 having a height of 10 to 200 μm is formed on the outer peripheral portion, whereby a space is formed between the semiconductor element 6 and the insulating substrate 1. Can be formed. And the diaphragm part 2 of the site | part which forms the space bends to the semiconductor element 6 side according to the pressure applied from the outside, and an electrostatic capacitance is formed with the movable electrode 3 and the fixed electrode 7.

  At this time, the movable electrode 3 and the fixed electrode 7 are opposed to each other with a space formed between the insulating base 1 and the semiconductor element 6 interposed therebetween, and the area of the movable electrode 3 and the fixed electrode 7 and the movable electrode are interposed between the electrodes. A predetermined capacitance is formed according to the distance between the fixed electrode 7 and the fixed electrode 7. And the diaphragm part 2 bends to the semiconductor element 3 side according to the pressure applied to the diaphragm part 2 from the outside, and the electrostatic capacitance changes by the interval between the movable electrode 3 and the fixed electrode 7 changing. It functions as a pressure-sensitive element that senses a change in applied pressure as a change in capacitance. Furthermore, the magnitude of the pressure applied from the outside can be known by processing this change in capacitance with the semiconductor element 6.

  Thus, the pressure detection device package of the present invention has an insulating substrate 1 having a first surface and a second surface facing each other, and a diaphragm portion 2 formed on the first surface side, and a diaphragm. A plurality of movable electrodes 3 formed on the surface of the part 2 and a plurality of parts formed around the diaphragm part 2 on the first surface of the insulating base 1 so as to be located on the inner side of the insulating base 1 from the surface of the diaphragm part 2 A wiring conductor 5 is provided. Then, the plurality of bumps 8 of the flip-chip type semiconductor element 6 having the fixed electrode 7 and the plurality of bumps 8 formed on the surface and facing the movable electrode 3 are joined to the plurality of wiring conductors 5. As a result, even if the distance between the movable electrode 3 formed on the surface of the diaphragm 2 and the fixed electrode 7 formed on the surface of the semiconductor element 6 becomes narrow, the bumps 8 of the semiconductor element 6 are connected to the wiring conductor 5. At the time of bonding, the height of the bump 8 of the semiconductor element 6 is increased by the depth from the first surface of the insulating base 1 to the wiring conductor 5 on the inner side of the insulating base 1. The external force applied to the semiconductor element 6 inadvertently at the time of sealing or transporting, or the thermal stress caused by the difference in thermal expansion between the semiconductor element 6 and the insulating substrate 1 acted on the bump 8 during the operation of the semiconductor element 6. Even so, the bumps 8 can effectively absorb the external force and thermal stress, and the external force and thermal pressure can be reduced. As a result, even if the distance between the movable electrode 3 and the fixed electrode 7 is reduced, the bonding strength between the bump 8 of the semiconductor element 6 and the wiring conductor 5 can be increased, and the connection reliability can be improved. Further, since the distance between the movable electrode 3 and the fixed electrode 7 can be reduced, the capacitance value can be increased to increase the sensitivity of capacitance detection by the semiconductor element 3.

  Further, as shown in the cross-sectional view of the pressure detection device package of the present invention shown in FIG. It is preferable to be formed. Thereby, even if the space | interval of the movable electrode 3 formed in the surface of the diaphragm part 2 and the fixed electrode 7 formed in the surface of the semiconductor element 6 becomes narrow, the height of the bump 8 of the semiconductor element 6 is Since the depth from the first surface of the insulating substrate 1 to the wiring conductor 5 formed on the bottom surface of the recess 4 is increased, the semiconductor device 6 is inadvertently applied to the semiconductor device 6 when the package is sealed or transported. Even if the applied external force or the thermal stress caused by the difference in thermal expansion between the semiconductor element 6 and the insulating base 1 acts on the bump 8 during the operation of the semiconductor element 6, the bump 8 effectively absorbs the external force and thermal stress. It can work to relieve external force and thermal pressure. Further, the wiring conductor 5 is formed around the diaphragm portion 2, and the stray capacitance with respect to the movable electrode 3 for detecting capacitance and the fixed electrode 7 can be reduced.

  Further, as shown in the cross-sectional view of the pressure detecting device package of the present invention in FIG. 3, a plurality of recesses 4 of the insulating base 1 are formed corresponding to the plurality of bumps 8 of the semiconductor element 6. preferable. As a result, each bump 8 of the semiconductor element 6 is accurately positioned and the amount of the bump 8 in each recess 4 can be made uniform, so that variations in the height of the bump 8 are effectively prevented. The In addition, external force, thermal stress, and the like acting on the bumps 8 of the semiconductor element 6 can be dispersed and relaxed on the inner walls of the respective recesses 4.

  Moreover, it is preferable that the depth of the concave portion 4 is smaller than the thickness of the diaphragm portion 2. As a result, the mechanical strength of the insulating base 1 between the diaphragm portion 2 and the inner wall of the recess 4 can be increased, and external force or thermal stress acts on the diaphragm portion 2 so that the movable electrode 3 is fixed to the fixed electrode 7 side. Even if it bends to the right, it is possible to effectively prevent a crack from being generated between the diaphragm 2 and the recess 4 due to the stress generated between the diaphragm 2 and the recess 4.

  Then, as shown in the sectional view of the pressure detection device of the present invention in FIG. 4, the pressure detection device package described above and the bumps 8 joined to the wiring conductor 5 on the surface are provided, and the pressure detection device package is insulated. A flip chip type semiconductor element 6 mounted on the base 1 so as to cover the diaphragm portion 2 and a fixed electrode 7 formed in a region facing the movable electrode 3 on the surface of the semiconductor element 6 are provided. Thereby, it has the characteristics of the above-described package for the pressure detection device, and can detect the external pressure with good accuracy and goodness.

  Further, as shown in the cross-sectional view of the pressure detection device of the present invention in FIG. 5, the diaphragm portion 2 of the insulating base 1 is formed by being joined to a support portion 9 formed on the first surface of the insulating base 1. May be. As a result, the height of the bump 8 of the semiconductor element 6 can be increased, and an external force applied to the semiconductor element 6 inadvertently when the package is sealed or transported to the semiconductor element 6, or the semiconductor element Even if thermal stress or the like due to the difference in thermal expansion between the semiconductor element 6 and the insulating substrate 1 acts on the bump 8 during the operation of the bump 6, the bump 8 works so as to effectively absorb the external force or thermal stress. Thermal pressure can be relaxed. As a result, the bonding strength between the bump 8 of the semiconductor element 6 and the wiring conductor 5 is increased, and the connection reliability can be improved. In addition, the distance between the movable electrode 3 and the fixed electrode 7 can be reduced, and the capacitance value can be increased.

  The support portion 9 and the diaphragm portion 2 are laminated on the ceramic green sheet to be the insulating base 1 while performing appropriate punching, laminating, cutting, etc. on the ceramic green sheet when the insulating base 1 is manufactured. The green ceramic molded body is obtained by integrating the green ceramic molded body and fired at a temperature of about 1600 ° C.

  In addition, the support part 9 and the diaphragm part 2 may be bonded to each other by firing a flat green ceramic molded body using a brazing material such as silver (Ag) -copper (Cu) alloy solder. .

  Further, as shown in the cross-sectional view of the pressure detecting device of the present invention in FIG. 6, since the sealing member 10 covering the semiconductor element 6 is provided on the first surface of the insulating base 1, the semiconductor element 6 is air-tight. It is hermetically sealed and has the characteristics of the above-described package for the pressure detection device over a long period of time, and is highly reliable so that the external pressure can be detected accurately and satisfactorily.

  The sealing member 10 is made of a metal such as iron (Fe) -nickel (Ni) -cobalt (Co) alloy, and is molded into a predetermined shape by a molding die or the like, and then gold (Au) -tin ( Sn) Joined with a brazing material such as an alloy solder.

  The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in FIG. 6, the sealing member 10 is made of metal, but may be ceramic or resin sealing member 10.

It is sectional drawing which shows an example of embodiment of the package for pressure detection apparatuses of this invention. It is a top view of the package for pressure detection apparatuses of this invention shown in FIG. It is a top view which shows another example of embodiment of the package for pressure detection apparatuses of this invention. It is sectional drawing which shows an example of embodiment of the pressure detection apparatus of this invention. It is sectional drawing which shows another example of embodiment of the pressure detection apparatus of this invention. It is sectional drawing which shows another example of embodiment of the pressure detection apparatus of this invention. It is sectional drawing which shows an example of embodiment of the conventional pressure detection apparatus.

Explanation of symbols

1 ············· Insulating substrate 2 ········ Diaphragm 3 ····································・ ・ ・ ・ Recess 5 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Wiring conductor (electrode)
6 ... Semiconductor element 7 ... Fixed electrode 8 ... Conductor bump 9 ... .... Supporting part 10 ......... Sealing member

Claims (7)

An insulating substrate having a first surface and a second surface facing each other, and having a diaphragm portion formed on the first surface side, a movable electrode formed on a surface of the diaphragm portion, and the insulating substrate A plurality of electrodes formed so as to be located on the inner side of the insulating base from the surface of the diaphragm portion around the diaphragm portion of the first surface, and a fixed electrode facing the movable electrode on the surface; A package for a pressure detection device, wherein the plurality of conductor bumps of a flip chip type semiconductor element in which a plurality of conductor bumps are formed are bonded to the plurality of electrodes. The package for a pressure detection device according to claim 1, wherein the plurality of electrodes are formed on a bottom surface of a recess formed around the diaphragm portion of the first surface of the insulating base. 3. The package for a pressure detection device according to claim 2, wherein a plurality of the recesses of the insulating base are formed corresponding to the plurality of conductor bumps of the semiconductor element. 4. The pressure detecting device package according to claim 2, wherein a depth of the concave portion is smaller than a thickness of the diaphragm portion. 5. The diaphragm according to claim 1, wherein the diaphragm portion of the insulating base is formed by being joined to a support portion formed on the first surface of the insulating base. Package for pressure detection device. 6. The pressure detection device package according to claim 1, and a conductor bump bonded to the electrode on a surface thereof, and the diaphragm portion is covered with the insulating base of the pressure detection device package. And a fixed electrode formed in a region of the surface of the semiconductor element facing the movable electrode. The pressure detection device according to claim 6, further comprising a sealing member that covers the semiconductor element on the first surface of the insulating base.

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