JP4533416B2 - 露光装置およびデバイス製造方法 - Google Patents

露光装置およびデバイス製造方法 Download PDF

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Publication number
JP4533416B2
JP4533416B2 JP2007248076A JP2007248076A JP4533416B2 JP 4533416 B2 JP4533416 B2 JP 4533416B2 JP 2007248076 A JP2007248076 A JP 2007248076A JP 2007248076 A JP2007248076 A JP 2007248076A JP 4533416 B2 JP4533416 B2 JP 4533416B2
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Prior art keywords
liquid
wafer
optical system
projection optical
nozzle
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JP2007248076A
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Japanese (ja)
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JP2008010893A (ja
JP2008010893A5 (enExample
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一志 中野
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Canon Inc
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Canon Inc
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007248076A 2007-09-25 2007-09-25 露光装置およびデバイス製造方法 Expired - Fee Related JP4533416B2 (ja)

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JP2007248076A JP4533416B2 (ja) 2007-09-25 2007-09-25 露光装置およびデバイス製造方法

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JP2007248076A JP4533416B2 (ja) 2007-09-25 2007-09-25 露光装置およびデバイス製造方法

Related Parent Applications (1)

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JP2005291809A Division JP4164508B2 (ja) 2005-10-04 2005-10-04 露光装置及びデバイス製造方法

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JP2008010893A JP2008010893A (ja) 2008-01-17
JP2008010893A5 JP2008010893A5 (enExample) 2009-11-19
JP4533416B2 true JP4533416B2 (ja) 2010-09-01

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
WO2013100114A1 (ja) * 2011-12-28 2013-07-04 株式会社ニコン 露光装置、露光方法、デバイス製造方法、液体回収方法、プログラム、及び記録媒体
CN113176711B (zh) * 2021-04-25 2024-08-16 上海图双精密装备有限公司 一种浸没式光刻机浸没流场维持装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
WO2004055803A1 (en) * 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
WO2004093159A2 (en) * 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004092833A2 (en) * 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
CN103383527B (zh) * 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
CN101436003B (zh) * 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles

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JP2008010893A (ja) 2008-01-17

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