JP4530891B2 - Method for positioning semiconductor wafer with support plate, method for manufacturing semiconductor wafer using the same, and positioning device for semiconductor wafer with support plate - Google Patents

Description

  The present invention relates to a method for positioning a semiconductor wafer with a support plate for determining the center position of a semiconductor wafer to which a support plate is bonded, a method for manufacturing a semiconductor wafer using the same, and a positioning apparatus for a semiconductor wafer with a support plate.

  A semiconductor wafer (hereinafter simply referred to as a “wafer”) is subjected to back surface processing by a mechanical method such as grinding or polishing, or a chemical method utilizing etching, and the thickness thereof is reduced. Further, when a wafer is processed using these methods, a protective tape is attached to the surface of the wafer in order to protect the wafer surface on which the wiring pattern is formed. Then, the polished wafer with the protective tape attached is rotationally scanned with the wafer periphery sandwiched between a light projector that projects white light or the like, and the peripheral position information is acquired. . Based on this position information, the center position and handling position of the wafer are obtained (see, for example, Patent Document 1).

In recent years, with the rapid progress of applications, wafers have been required to be thinned, and thinned to 150 μm or less. For this reason, as the wafer becomes thinner, the rigidity of the wafer itself decreases. Therefore, in order to give the wafer rigidity, a support plate having substantially the same shape as the diameter of the wafer is bonded instead of the protective tape.
JP-A-8-279547

  However, the conventional apparatus has the following problems.

  The support plate bonded to the wafer semi-transmits or totally reflects the white light projected from the projector. For this reason, in the conventional apparatus, the white light projected from the projector is reflected by both the wafer and the support plate, and cannot be received by the light receiver disposed opposite to the projector across the wafer. Further, since the white light reflected and returned from the wafer and the support plate is scattered, the peripheral position of the wafer and the peripheral position of the support plate cannot be accurately determined from the light reception data received by the light receiver. As a result, there is a problem that the amount of misalignment between the support and the wafer can be obtained, and the center position of the wafer cannot be obtained.

  In addition, since the position information of the wafer periphery cannot be obtained accurately, there is a problem that the positions of notches and orientation flats, which are detection parts for determining the handling position, cannot be obtained.

  Furthermore, the wafer with the support plate is placed in each process in a state where the center of the wafer is shifted in order to carry and place the wafer in each process while holding the support plate in the transfer process or the like. In particular, in the wafer mounting process, when the wafer is attached to the center of the ring frame from the back via a dicing tape, it is placed at the center of the ring frame based on the center position of the support plate. Is not located in the center of the ring frame. The wafer transferred to the dicing process in that state has a problem that it cannot be accurately cut into chips due to the displacement of the center position.

  The present invention has been made in view of such circumstances, and can accurately determine the workpiece such as a semiconductor wafer to which the support plate is bonded and the edge of the support plate, and determine an appropriate handling position. A main object of the present invention is to provide a method for positioning a semiconductor wafer with a supporting plate, a method for manufacturing a semiconductor wafer using the same, and a positioning device for a semiconductor wafer with a supporting plate.

  The present invention has the following configuration in order to achieve the above object.

The first invention detects at least one of a center position of a semiconductor wafer to which a semi-transmissive or total reflection type support plate is bonded and a positioning detection portion at a peripheral portion of the semiconductor wafer, and uses the detection result. A method of positioning a semiconductor wafer with a support plate for determining a handling position of the semiconductor wafer,
The wafer toward the non-bonding surface of the semiconductor wafer where the was to the support plate via a double-sided adhesive tape adhered to fit in the support plate having a diameter more than the size of the semiconductor wafer to the peripheral edge of the semiconductor wafer Reflected light that scans along the peripheral edge while irradiating a laser of a predetermined wavelength having a predetermined width in the radial direction from the projector, and the laser reflects back from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate In accordance with the change in the light receiving state when the light is received by the light receiver, the detection process of detecting the edge of the semiconductor wafer and the edge of the support plate,
Using the detected information of the both edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and the center position of the semiconductor wafer and the peripheral edge of the semiconductor wafer based on the change of the distance A determination process for determining at least one of the detection sites;
It is provided with.

  (Operation / Effect) According to the first invention, by detecting both end edges of the semiconductor wafer and the support plate, the positions of the respective outer shapes can be known, and the respective center positions of the support plate and the semiconductor wafer are obtained. Can do. In addition, the distance between both edges can be obtained by taking the difference between both edges located on the same rotation angle with respect to the center position of either the support plate or the semiconductor wafer, and based on the change in the distance The position of the detection part of the semiconductor wafer can be determined. In other words, since the center position of the bonded support plate and the semiconductor wafer and the position of the detection portion of the semiconductor wafer can be obtained with high accuracy, the handling position of the semiconductor wafer with the support plate can also be determined with high accuracy. .

According to this method, according to the change in the light receiving state in which the reflected light of the laser irradiated toward the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate is received by the light receiver, the support and It is possible to obtain the positions of both end edges of the semiconductor wafer with high accuracy. For example, since the distance from the projector to the respective surfaces of the support plate and the semiconductor wafer changes by the thickness of the semiconductor wafer, the lasers projected from the projector have different return times that are reflected from the respective surfaces. Therefore, the positions of the support plate and the edge of the semiconductor wafer can be detected from the difference in return time.

  Further, when the support and the semiconductor wafer are made of different materials, the difference in the reflectance of the laser becomes clear. Therefore, the difference in the amount of received light clearly depends on the position of the light receiver. That is, both edges of the support plate and the semiconductor wafer can be detected.

A second invention is a method of manufacturing a semiconductor wafer using the first invention.
In the manufacturing method of the semiconductor wafer using the positioning method of the semiconductor wafer with a support plate according to claim 1,
A bonding step of bonding the support plate having a size equal to or larger than the diameter of the semiconductor wafer to the semiconductor wafer;
The wafer toward the non-bonding surface of the semiconductor wafer where the was to the support plate via a double-sided adhesive tape adhered to fit in the support plate having a diameter more than the size of the semiconductor wafer to the peripheral edge of the semiconductor wafer Reflected light that scans along the peripheral edge while irradiating a laser of a predetermined wavelength having a predetermined width in the radial direction from the projector, and the laser reflects back from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate In accordance with the change in the light receiving state when the light is received by the light receiver, the detection process of detecting the edge of the semiconductor wafer and the edge of the support plate,
Using the detected information of the both edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and the center position of the semiconductor wafer and the peripheral edge of the semiconductor wafer based on the change of the distance A determination process for determining at least one of the detection sites;
A storage step of storing in the storage means the position information of at least one of the detection position at the center position of the semiconductor wafer and the peripheral portion of the semiconductor wafer obtained from the determination result;
A transport process for transporting the semiconductor wafer with the support plate after grinding to a wafer mount device for attaching and holding the semiconductor wafer with an adhesive tape in the center of the ring-shaped frame;
A transfer process of transferring the position information stored in the storage means to a wafer mount device;
When the semiconductor wafer with the support plate transported to the wafer mounting apparatus is attached and held in the center of the ring-shaped frame via an adhesive tape, the semiconductor wafer is attached using the positional information transferred from the storage means. A correction process for correcting the position to be attached and held;
Based on the correction, a holding process of attaching and holding a semiconductor wafer with a support plate in the center of the ring-shaped frame,
A separation step of separating the support plate from the semiconductor wafer with the support plate integrated with the ring frame;
A peeling process of peeling the double-sided pressure-sensitive adhesive sheet from the surface of the semiconductor wafer from which the support plate is separated;
It is provided with.

(Function / Effect) According to the second invention, when the support is bonded to the semiconductor wafer before grinding, the position information of the center position of the support plate and the semiconductor wafer and / or the edge of the semiconductor wafer is acquired. The The position information can be transferred to a subsequent wafer mount apparatus for use. In other words, when a semiconductor wafer with a support plate is attached and held on the ring-shaped frame, the semiconductor wafer is transported above the ring-shaped frame while holding the upper surface of the support plate, and the semiconductor is located at the center (center) of the ring-shaped frame. After the position correction is performed using the position information so that the center of the wafer is positioned, the semiconductor wafer with the support plate can be stuck and held on the ring frame. Therefore, in the subsequent dicing process, the semiconductor wafer can be accurately cut into chips.

A third invention is a semiconductor wafer positioning apparatus with a support plate for determining a handling position of a semiconductor wafer bonded with a semi-transmissive or total reflection type support plate via a double-sided adhesive tape,
Holding means for holding a central portion of the semiconductor wafer bonded so as to fit in a support plate having a size equal to or larger than the diameter of the semiconductor wafer;
Irradiation means for irradiating a laser with a predetermined wavelength having a predetermined width in the radial direction of the semiconductor wafer from the holding surface side held by the holding means toward the periphery of the semiconductor wafer with a support plate;
A light receiving means for receiving reflected light that is irradiated from the irradiation means to the periphery of the semiconductor wafer with a support plate and reflected and returned by the holding surface of the semiconductor wafer and the bonding surface of the support plate;
A moving means for relatively moving the set of the irradiation means and the light receiving means and the holding means so that the set of the irradiation means and the light receiving means scans the periphery of the semiconductor wafer with the support plate;
While irradiating a laser with a predetermined wavelength having a predetermined width in the wafer radial direction from the non-bonded surface side of the semiconductor wafer bonded to the support plate via a double-sided adhesive tape toward the periphery of the semiconductor wafer Scanning along the periphery, according to the change in the light receiving state when the reflected light reflected by the laser reflected from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate is received by the light receiving means, Obtain the position information of the edge of the semiconductor wafer and the edge of the support plate,
Using the information of the both end edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and based on the change in the distance , at least the detection position at the center position of the semiconductor wafer and the peripheral portion of the semiconductor wafer. A computing means for obtaining one;
Alignment means for aligning the handling position of the semiconductor wafer with a support plate by rotating the holding means horizontally and around the central axis according to the calculation result of the calculation means;
It is provided with.

(Operation / Effect) According to the third invention, the holding means holds the central portion of the semiconductor wafer with the support plate. The irradiating means irradiates the peripheral edge of the semiconductor wafer with a support plate with a laser having a predetermined wavelength from the holding surface side held by the holding means. The light receiving means receives reflected light that is irradiated from the irradiation means to the periphery of the semiconductor wafer with the support plate and reflected and returned by the holding surface of the semiconductor wafer and the bonding surface of the support plate. The moving means relatively moves the set of the irradiation means and the light receiving means and the holding means so that the set of the irradiation means and the light receiving means scans the periphery of the semiconductor wafer with the support plate. The calculation means obtains positional information of the edge of the semiconductor wafer and the edge of the support plate based on the light reception result of the light receiving means, and uses the positional information to center the semiconductor wafer and / or the peripheral portion of the semiconductor wafer. The detection part in is obtained. The alignment means aligns the handling position of the semiconductor wafer with the support plate by rotating the holding means horizontally or / and around the central axis according to the calculation result of the calculation means. That is, the first invention method can be suitably realized.

  According to the semiconductor wafer positioning method with a support plate and the apparatus using the same according to the present invention, the positions of the respective outer shapes can be known by detecting both end edges of the semiconductor wafer and the support plate. Each of the center positions of the wafer can be obtained. In addition, the distance between both edges can be obtained by taking the difference between both edges located on the same rotation angle with respect to the center position of either the support plate or the semiconductor wafer, and based on the change in the distance The position of the detection part of the semiconductor wafer can be determined. That is, since the center position of the support plate and the semiconductor wafer and the position of the detection portion of the semiconductor wafer can be obtained with high accuracy, the handling position of the semiconductor wafer with the support plate can also be determined with high accuracy.

<Example 1>

  Embodiments of the present invention will be described below with reference to the drawings. In this embodiment, a support plate laminating apparatus for bonding a support plate and a wafer, which includes a device with a discrimination function for discriminating between a semiconductor wafer (hereinafter simply referred to as “wafer”) and the support plate, will be described as an example. To do.

  FIG. 1 is a perspective view showing the overall configuration of the support plate laminating apparatus.

  This support plate laminating apparatus includes an object supply unit 1 and a robot arm 2 loaded with a cassette C1 containing a wafer W as a bonding object and a cassette C2 containing a support plate G as a glass substrate. Supplied from the wafer transport mechanism 3, the alignment stage 4, the chuck table 5 on which the wafer W is placed and sucked and held, the tape supply unit 6 that supplies the double-sided adhesive tape T toward the wafer W, and the tape supply unit 6. Separator recovery unit 7 that peels and collects separator s1 that is attached to wafer W from double-sided adhesive tape T with a separator, and affixing unit that affixes double-sided adhesive tape T to wafer W placed on chuck table 5 and held by suction. 8. Tape cutting mechanism 9 for cutting and cutting the double-sided adhesive tape T affixed to the wafer W along the outer shape of the wafer W, the wafer W The peeling unit 10 for peeling off the unnecessary tape T ′ after being attached and cut, the tape collecting unit 11 for winding up and collecting the unnecessary tape T ′ peeled off by the peeling unit 10, and the double-sided pressure-sensitive adhesive tape T after the alignment. A bonding mechanism 13 or the like for bonding the wafer W to which the wafer is bonded to the support plate G is provided. A specific configuration of each structural unit and mechanism will be described below.

  The object supply unit 1 can be loaded with two cassettes C1 and C2 in parallel. In the cassette C1, a large number of wafers W with the wiring pattern surface facing upward are inserted and stored in multiple stages in a horizontal posture. In addition, in the cassette C2, a large number of support plates G are inserted and stored in multiple stages in a horizontal posture. The support plate G has a disk shape that is not less than the diameter of the wafer W. The support plate G is not limited to a glass substrate, and may be any material that can give rigidity to the extent that it does not bend when bonded to a wafer W after thin processing. For example, quartz, stainless steel, or the like can be applied.

  The robot arm 2 provided in the wafer transfer mechanism 3 is configured to be able to move forward and backward horizontally, and can be driven and swung up and down as a whole. At the tip of the robot arm 2, a horseshoe-shaped vacuum suction holding unit (not shown) is provided, and a gap between the wafers W or the support plates G housed in multiple stages in each cassette C1, C2 is provided. The wafer W or the glass substrate G is sucked and held from the back surface by inserting the holding portion into the wafer, and the wafer W or the like that is sucked and held is pulled out from each of the cassettes C1 and C2 and transferred to each mechanism.

  In this embodiment, when the robot arm 2 takes out the wafer W from the cassette C1, the wafer W is transferred in the order of the alignment stage 4, the chuck table 5, and the bonding mechanism 13.

  Further, when the robot arm 2 takes out the support plate G from the cassette C2, the support plate G is conveyed in the order of the alignment stage 4 and the bonding mechanism 13. Therefore, the robot arm 2 operates in two systems corresponding to the wafer W and the support plate G, which are objects to be bonded.

  As shown in FIGS. 2 and 3, the alignment stage 4 holds a wafer W and a support plate G, which are objects to be bonded, on a holding table 30 that sucks and holds them, and rotates around a vertical axis P. A discriminating mechanism 32 for discriminating an object held on the table 30, a first peripheral portion measuring mechanism 33 for measuring the peripheral edge of the wafer W held on the holding table 30, and the peripheral edge of the support plate G held on the holding table 30 A second peripheral edge measuring mechanism 34 that measures the rotation angle, a first arithmetic processing section 38 that collects and calculates the rotation angle of the rotation mechanism 31 and position data of the peripheral edge of the wafer W and the support plate G corresponding to the rotation angle, and the rotation It is comprised from the raising / lowering drive mechanism 35 which enables the mechanism 31 to raise / lower with respect to a rotating shaft.

  The holding table 30 is configured to be rotatable by driving a rotation pulse motor (not shown) continuously provided at the lower portion. In addition, a pulse of a digital signal is transmitted from the rotation pulse motor to a first arithmetic processing unit 38 to be described later at every fixed rotation angle. The constant rotation angle is, for example, 0.036 degrees, and a 1000 pulse digital signal is transmitted to the first arithmetic processing unit 38 provided in the first controller 39 when the rotation mechanism 31 rotates once. The Further, a suction hole for sucking the object to be placed and held is formed in the holding table 30, and a suction force is applied from a suction device (not shown).

  The raising / lowering drive mechanism 35 is provided such that a stage placed by driving a pulse motor (not shown) moves in the X-axis and Y-axis directions along the linear guide and is movable in the Z-axis direction.

  The discriminating mechanism 32 receives light reflected from the light projector 47 that projects light toward the object placed and held on the holding table 30 and the light projected from the light projector 47 is reflected from the back surface of the object. And a light receiving sensor 48. The light received by the light receiving sensor 48 is converted into a received light voltage, further converted into a predetermined digital signal, and transmitted to the first arithmetic processing unit 38 of the first controller 39.

  The first peripheral edge measuring mechanism 33 is provided on the side (right side in the drawing) of the holding table 30, and the incident light is reflected by a mirror interposed in a substantially L-shaped cylindrical body to be internally The light is condensed by the lens and received by the light receiving sensor 53. The light receiving sensor 53 is a one-dimensional line sensor in which a plurality of light receiving elements are arranged on a straight line, and transmits light receiving data received by the line sensor to a first arithmetic processing unit 38 to be described later.

  The first peripheral edge measuring mechanism 33 is configured to be movable back and forth in the X-axis direction in the drawing along a linear guide (not shown). In addition, a light source 55 that projects light toward the peripheral edge of the wafer W is disposed opposite to the upper portion of the first peripheral edge measuring mechanism 33. As the light source 55, a fluorescent tube that projects white light is used.

  The second peripheral edge measuring mechanism 34 is provided on the side of the holding table 30 (left side in the drawing), and irradiates the laser with the wavelength reflected by the surface of the support plate G toward the periphery of the support plate G vertically. The projector 56 includes a projector 56 and a light receiving sensor 57 disposed so as to face the projector 56 with the support plate G held on the holding table 30 interposed therebetween. The light receiving sensor 57 is a one-dimensional line sensor in which a plurality of light receiving elements are arranged on a straight line, and transmits light reception data received by the line sensor to a first arithmetic processing unit 38 described later. In addition, as a wavelength of a laser, it is 225-670 nm, Preferably it is 225-475 nm.

  The first arithmetic processing unit 38 obtains the respective handling positions according to the determination of the object held on the holding table 30, and when the object is the wafer W and the support plate G. The object is determined by comparing and determining the object placed and held on the holding table 30 based on a digital signal (measured value) indicating a change in the received light voltage transmitted from the light receiving sensor 48 of the determining mechanism 32. For example, the reference value of the received light voltage associated with the reflectance of the wafer W and the support plate G set and input in advance to the first controller 39 from the operation unit 58 is compared with the measured value and the one that matches is selected.

  As a result of the discrimination, when the object is the wafer W, the center position of the wafer W is obtained, and the position of the notch or the orientation flat formed on the peripheral edge of the wafer is obtained. The wafer center position is obtained by using the received light voltage when the light projected from the light source 55 of the first periphery measuring mechanism 33 to the periphery of the wafer is linearly received by the light receiving sensor 53 while rotating the holding stage 30. Obtain peripheral position information. Then, the distance from a certain point on the surface of the wafer W to the periphery is calculated, and the center position is determined by calculating the variance of the distance data of a predetermined ratio from the larger one of the obtained distance data. The determination of the center position of the wafer W is not limited to this calculation method, and may be obtained using a least square method or the like. Also, the position of the notch is obtained using the position information.

  Next, when the object is the support plate G, the center position of the support plate G is obtained in the same manner as the wafer W. The center position of the support plate G uses the received light voltage when the laser irradiated to the wafer peripheral portion from the projector 56 of the second peripheral measuring mechanism 34 is linearly received by the light receiving sensor 57 while rotating the holding stage 30. Then, position information on the periphery of the support plate is obtained. Then, the distance from a certain point on the surface of the support plate G to the periphery is calculated, and the center position is determined by calculating the variance of the distance data of a predetermined ratio from the larger one of the obtained distance data. The determination of the center position of the support plate is not limited to this calculation method, and may be obtained using a least square method or the like.

  Therefore, the alignment stage 4 discriminates between the wafer W and the support plate G and aligns them. In the case of the wafer W, alignment is performed based on the center position and the position of the notch or orientation flat. In the case of the support plate G, alignment is performed based on the center position.

  Returning to FIG. 1, the chuck table 5 vacuum-sucks the wafer W transferred from the wafer transfer mechanism 3 and placed in a predetermined alignment posture. Further, a cutter running groove is formed on the upper surface of the chuck table 5 in order to cut the double-sided adhesive tape T by rotating a cutter blade 12 provided in a tape cutting mechanism 9 described later along the outer shape of the wafer W. ing.

  As shown in FIGS. 4 to 7, the tape supply unit 6 guides the double-sided adhesive tape T with the separators s1 and s2 fed from the supply bobbin 14 around the guide roller 15 group, and peels the separator s1. The adhesive tape T is configured to be guided to the affixing unit 8 and is configured so as to give an appropriate rotational resistance to the supply bobbin 14 so that excessive tape feeding is not performed.

  In the separator collection unit 7, the collection bobbin 16 that winds up the separator s 1 peeled from the double-sided adhesive tape T is driven to rotate in the winding direction.

  The affixing unit 8 is provided with an affixing roller 17 that faces forward and is horizontally reciprocated by a slide guide mechanism and a screw feed type driving mechanism (not shown).

  The peeling unit 10 is provided with a peeling roller 19 horizontally facing forward, and is driven to reciprocate horizontally by a slide guide mechanism and a screw feed type driving mechanism (not shown).

  The tape collecting unit 11 is configured so that the collecting bobbin 20 that takes up the unnecessary tape T ′ is driven to rotate in the winding direction.

  The tape cutting mechanism 9 is provided with a pair of support arms arranged in parallel at the lower part of a movable table (not shown) that can be driven up and down so as to be capable of driving and turning around a vertical axis P located on the center of the chuck table 5. A cutter blade 12 with the blade tip facing downward is mounted on a cutter unit provided on the free end side of the arm, and the cutter arm 12 travels along the outer periphery of the wafer W by turning the support arm around the vertical axis P. The double-sided adhesive tape T is cut out.

  As shown in FIGS. 8 and 9, the bonding mechanism 13 includes a holding stage 22 having a holding table 21 that horizontally holds and holds the wafer W, and a wafer W on which the support plate G is bonded. A rotating mechanism 23 that is held by 21 and rotated around the vertical axis P, a third peripheral measuring mechanism 24 that measures the peripheral edge of the wafer W with a supporting plate, a rotational angle of the rotating mechanism 23 and a supporting plate that corresponds to the rotational angle. The second arithmetic processing unit 25 that collects and calculates the position data of the peripheral edge of the wafer W, the elevating drive mechanism 26 that allows the rotating mechanism 23 to move up and down with respect to the rotation vertical axis P, and the driving movement on the surface of the holding table 21. The laminating roller 27 is provided. For convenience, the right side of the figure is the front and the left side is the rear. The holding table 21 corresponds to the holding means of the present invention, the rotating mechanism 31 corresponds to the moving means, the second peripheral edge measuring mechanism 24 corresponds to the irradiation means and the light receiving means, and the second arithmetic processing unit 25 corresponds to the calculating means.

  The upper surface of the holding table 21 is configured as a vacuum suction surface, and can hold the wafer W positioned and placed by suction. Further, the holding table 21 is configured to be rotatable by driving a rotation pulse motor (not shown) provided continuously below the holding table 21.

  The third peripheral edge measuring mechanism 24 is provided on the side of the holding stage 22 and is held when the holding table 21 is raised to a predetermined height with the support plate G being sucked and held as shown in FIG. It is configured to be movable along a linear guide by driving a pulse motor (not shown) so that the tip portion can be moved forward and backward in the gap between the stage 22 and the holding table 21. Further, on the upper portion of the front end portion, a projector 41 that irradiates a laser having a predetermined wavelength across the periphery of the wafer W on the back surface side of the wafer and the periphery of the glass substrate G, and the laser projected from the projector 41 are on the wafer W. The light receiving sensor 42 receives the reflected light reflected from the non-bonding surface and the bonding surface of the support plate G. The light receiving sensor 42 is a one-dimensional line sensor in which a plurality of light receiving elements are arranged on a straight line, and transmits light receiving data received by the line sensor to a second arithmetic processing unit 25 described later.

  The second arithmetic processing unit 25 uses the signal from the light receiving sensor 42 that detects the reflected light that is reflected back from the back surface of the wafer W with the support plate as the wafer periphery rotates, and uses the signal from the light receiving sensor 42 to detect the wafer W and the support plate. The position information of both end edges of G is obtained. Further, using the position information, the center position of the support plate G and the wafer W and the amount of deviation of the center position of the wafer W from the center position of the support plate G are obtained. The method will be specifically described below.

  When the holding table 21 is rotated and scanned from the holding table side toward the periphery of the wafer W with the support plate, the reflected light reflected from the periphery of the support plate G and the wafer W is returned. The light receiving sensor 42 receives light. At this time, as shown in FIG. 12, the distance from the light projector 41 and the light receiving sensor 42 on the bonding surface of the support plate G is increased by the thickness of the wafer W. Therefore, a minute delay occurs in the time when the reflected light is received by the cell unit of the light receiving sensor 42 which is a one-dimensional line sensor. The edge of the wafer W is specified from the position of the cell where the delay time occurs. Further, the boundary between the cell that does not receive the reflected light and the cell that receives the light is specified as the edge of the support plate G.

  When both end edges are obtained, it is found that the center position of the wafer W is deviated (eccentric) from the center position of the support plate G by obtaining the distance between the both end edges. That is, when the center position of the wafer W is deviated from the center position of the support plate G, as shown in FIG. 15, with respect to the reference value 3000 μm of the distance between both end edges where the center positions coincide with each other, An error occurs.

  Therefore, the center position of the wafer W is obtained by correcting this error. In this embodiment, for example, as shown in FIG. 12, when it is assumed that the center position of the support plate G coincides with the holding table rotation center, the support plate end from the holding table rotation center at the point A in the X-axis direction. The distance to the edge is L1A, the distance to the wafer edge is L2A, and as shown in FIG. 11, the distance from the rotation center of the holding table 21 to the edge of the support at the point B opposite to the point A is L1B. When the distance from the wafer edge is L2B, the distance from the projector to the back surface of the support plate is H1A, and the distance from the back surface of the wafer is H2A, the wafer center position is shifted from the center position of the support plate G in the X-axis direction. The amount can be determined by the following equation (1).

  (L1A (H1A) −L2A (H2A)) − (L1B−L2B) = X ″ / 2 (1)

  For the Y-axis direction, as shown in FIG. 12, the distance from the holding table rotation center to the support plate edge at point C in the Y-axis direction is L1C, the distance to the wafer edge is L2C, and The distance from the holding table rotation center to the edge of the support at the opposite point D is L1D, the distance from the wafer edge is L2D, the distance from the projector 41 to the back of the support plate is H1C, and the distance from the wafer back is If H2C, the amount of deviation of the wafer center position with respect to the center position of the support plate G in the Y-axis direction can be obtained by the following equation (2).

  (L1C (H1C) −L2C (H2C)) − (L1D−L2D) = Y ″ / 2 (2)

  From the above arithmetic expressions (1) and (2), the deviation amount of the center position of the wafer W with respect to the center position of the support plate G is compared with the upper and lower limits of a predetermined allowable range, and if they are not within the allowable range. Also, it has a determination function for determining as a bonding failure.

  Further, the position of the notch K for determining the handling position of the wafer W shown in FIG. 14 is obtained from the position information of the wafer edge. For example, as shown in FIG. 13, the amount of reflected light received by the light receiving sensor 42 increases in the notch portion. In addition, in the change of the edge interval between the wafer W and the support plate G with respect to the reference value, the edge interval increases at the notch portion. That is, as shown in FIG. 15, the error in the distance between both end edges suddenly increases at the notch portion and can be specified from the cell of the line sensor. Therefore, the notch portion can be specified by taking a difference for each adjacent rotation phase angle from the received light data detected for each predetermined rotation phase angle.

  Next, the laminating roller 27 is configured by covering the outer periphery of the metal roller with an elastic material such as silicon rubber, and is supported horizontally on the lower part of the movable base 29 arranged to be movable back and forth and up and down. Has been. Further, the laminating roller 27 can be driven to rotate by the motor M, and when the laminating operation for horizontally moving the laminating roller 27 forward, it is driven to rotate forward at the same peripheral speed as the forward movement speed. Yes.

  Although the detailed structure is not shown, the movable base 29 is supported by a lifting frame that is driven up and down by a pulse motor or the like so as to be horizontally movable back and forth via a guide shaft. The laminating roller 27 is moved back and forth horizontally by the horizontal driving means, and the laminating roller 27 is moved back and forth horizontally by moving the movable table 29 back and forth, and the laminating roller 27 moves up and down by raising and lowering a lifting frame (not shown). It is like that.

  The first controller 39 includes a first arithmetic processing unit 38 and performs various arithmetic processes, and controls each mechanism provided in the alignment stage 4. The second controller 28 includes a second arithmetic processing unit 25 and various types. While performing arithmetic processing, each mechanism provided in the bonding mechanism 13 is controlled. Further, the entire support plate laminating apparatus is comprehensively controlled by a main control unit (not shown). The second controller 28, the holding table 21, the rotation mechanism 32, and the like constitute the alignment means of the present invention.

  Next, a series of processes up to bonding the wafer W and the support plate G using the above-described embodiment apparatus will be described based on the flowchart shown in FIG.

  When a bonding command is issued, first, the robot arm 2 in the wafer transfer mechanism 3 is moved toward the cassette C1 or the cassette C2 placed and loaded on the object supply unit 1, and the holding unit at the tip is set to one of the cassettes. The object is inserted into the gap between the objects accommodated in the container, sucked and held from the back surface (lower surface), and the object taken out is transferred to the alignment stage 4 (step S1).

  The first arithmetic processing unit 38 determines the object placed on the alignment stage 4. That is, the light projected from the light projecting unit 47 of the determination mechanism 32 is reflected by the object, and the reflected light is received by the light receiving sensor 48. Based on the change in the amount of received light, the first arithmetic processing unit 38 compares with a reference value obtained and set in advance to determine which is the target (step S2).

  When the object discrimination process is completed, the first controller 39 selects either the first periphery measurement mechanism 33 or the second periphery measurement mechanism 34 according to the object (step S3). That is, when the object is the wafer W, the first periphery measuring mechanism 33 is selected (proceeding to step S4), and when the object is the glass substrate G, the second periphery selecting mechanism 34 is selected (proceeding to step S12). .

  When the object is the wafer W, the first controller 39 operates the first peripheral measurement mechanism 33 to rotationally scan the holding table 30 with respect to the light source 55 and the light receiving sensor 53 and acquire the positional information on the peripheral edge of the wafer. (Step S4).

  When the acquisition of the position information is completed, the first arithmetic processing unit 38 obtains the center position of the wafer W based on the acquired position information (Step S5). Further, an alignment portion such as the notch K is determined from the position information, and a deviation amount with respect to a predetermined reference position is obtained (step S6).

  When the center position and the amount of deviation are obtained by the first arithmetic processing unit 38, the first controller 39 controls the rotation mechanism 31 to align the wafer W with the handling position (step S7).

  When the alignment of the wafer W is completed, the robot arm 2 sucks and holds the wafer W and transfers it to the chuck table 5 (step S8). When the wafer W is transferred to the chuck table 5, the robot arm 2 takes out the object from a cassette different from the cassette from which the object has been taken out. That is, at this time, the robot arm 2 goes to take out the support plate G from the cassette C2, and the processing of the wafer W and the support plate G is performed in parallel.

  As shown in FIG. 4, the double-sided adhesive tape T in a state where the separator s <b> 1 on the wafer facing surface is peeled off is supplied from the tape supply unit 6 to the upper side of the wafer W sucked and held on the chuck table 5. As the affixing roller 17 is lowered, the affixing roller 17 rolls forward on the wafer W while pressing the double-sided adhesive tape T downward as shown in FIG. As a result, the double-sided adhesive tape T is attached to the surface of the wafer W.

  Next, when the affixing unit 8 reaches the end position, as shown in FIG. 6, the cutter blade 12 waiting upward is lowered and pierced into the double-sided adhesive tape T in a cutter running groove (not shown) of the chuck table 5. It is.

  When the cutter blade 12 is lowered to a predetermined cutting height position and stopped, the support arm 22 is rotated in a predetermined direction, and accordingly, the cutter blade 12 is swung around the vertical axis P and the double-sided adhesive tape T is moved. Are cut along the wafer outline.

  When the tape cutting along the outer periphery of the wafer W is completed, as shown in FIG. 7, the cutter blade 12 is raised to the original standby position, and then the peeling unit 10 is cut and cut on the wafer W while moving forward. The remaining unnecessary tape T ′ and separator s2 are rolled up and peeled off.

  When the peeling unit 10 reaches the end position of the peeling operation, the peeling unit 10 and the pasting unit 8 move in the opposite directions and return to the initial position. At this time, the unnecessary tape T 'is wound around the recovery bobbin 20, and a certain amount of the double-sided adhesive tape T is fed out from the tape supply unit 6 (step S9).

  When the tape attaching process is completed, after the suction on the chuck table 5 is released, the wafer W that has undergone the attaching process is transferred to the holding part of the robot arm 2 and transferred to the holding table 21 of the attaching unit 13. (Step S10). Here, the processing of only the wafer W is completed.

  In addition, after the wafer W in step S <b> 8 is transferred from the alignment stage 4 to the chuck table 5, the robot arm 2 takes out the support plate G from the cassette C <b> 2 and transfers it to the alignment stage 4. That is, the process from step S1 to step S3 is performed, and then the process proceeds to step S11.

  The first controller 39 operates the second peripheral edge measuring mechanism 34 to rotationally scan the holding table 30 with respect to the light projector 56 and the light receiving sensor 57, and obtains positional information on the peripheral edge of the support plate (step S11). When the acquisition of the position information is completed, the first calculation processing unit 38 obtains the center position of the support plate G based on the acquired position information (step S12).

  When the center position of the support plate G is obtained by the first arithmetic processing unit 38, the first controller 39 controls the rotation mechanism 31 to align the support plate G with the handling position (step S13). When the alignment is completed, the support plate G is transferred to the holding unit of the robot arm 2 and overlapped with the wafer W previously placed and held on the holding table 21 of the bonding mechanism 13 (step S14).

  The second controller 28 rolls the laminating roller 27 of the laminating mechanism 13 onto the surface of the support plate G, and bonds the support plate G to the wafer W (step S15). When the bonding is completed, the bonding roller 27 returns to the initial position. Thereafter, the holding table 21 holding the wafer W with the support plate is raised to a predetermined height, and the tip of the third peripheral edge measuring mechanism 24 is inserted into the gap between the holding table 21 and the holding stage 22, and the support plate G and the wafer W are inserted. Set the position of to the detection position.

  When the alignment is completed, a laser beam is projected from the projector 41 to the peripheral edge of the back surface of the wafer, and rotational scanning in which the holding table 21 rotates is started. By utilizing the reflected light from the back surface of the wafer W and the support plate G received by the light receiving sensor 42 along with this rotational scanning, the positional information on the edges of the wafer W and the support plate G, the center position, and the holding table 21. The second arithmetic processing unit 25 obtains a deviation amount of the center position of the wafer W with respect to the rotation center (step S16). At this time, when the amount of deviation is larger than the upper limit value and the lower limit value of the predetermined allowable range, it is determined as a pasting error and conveyed to step S19 which is a reprocessing step (step S17). The wafer W with a support plate that falls within the allowable range is sucked and held by the lot arm 2 and directly transferred to the next process, or once stored in a cassette and transferred to the next process (step S18). Thus, a series of bonding processes for the glass substrate G and the wafer W is completed.

  As described above, a laser having a high directivity is irradiated toward the peripheral edges of the back surface of the wafer W and the support plate G, the laser is reflected from the back surfaces of both members, and is received by the light receiving sensor 42 which is a one-dimensional line sensor. Thus, it is possible to determine the reflected light from the back surface of the support plate that is delayed by the thickness of the wafer W and returns. That is, the cell portion of the sensor where the delay time occurs can be specified as the edge of the wafer W, and the boundary between the cell where the reflected light does not return and the cell where the reflected light returns returns as the edge of the support plate G. Can do. The center position of the wafer W and the support plate G can be obtained by using the obtained position information of both end edges, and the support plate G can be determined from the distance between both end edges and a predetermined reference value for the distance between both end edges. The amount of deviation of the center position of the wafer G with respect to the center position can be obtained. Based on the obtained shift amount, the position correction of the center position of the wafer can be performed with high accuracy.

<Example 2>

  In the present embodiment, the case where the alignment stage of the wafer mount apparatus is provided with the same third peripheral edge measuring mechanism as in the above embodiment will be described as an example. Therefore, the same components are only given the same reference numerals, and different portions are specifically described.

  FIG. 17 is a perspective view showing the overall configuration of the wafer mount apparatus.

  The wafer mount apparatus 101 according to the present embodiment aligns the wafer W with a wafer supply unit 102 loaded with cassettes C for storing wafers W with support plates in multiple stages, a wafer transfer mechanism 103 having a robot arm 104, and the wafer W. Alignment stage 107, wafer holding table 115 for sucking and holding wafer W, ring frame supply unit 116 in which ring frames f are stored in multiple stages, and affixing position of dicing tape DT which is an example of an adhesive tape. A ring frame transport mechanism 117 for transporting the wafer, a ring frame lift mechanism 126 for moving the dicing tape DT up and down between the ring frame f and the wafer W to a sticking position and a standby position, and dicing on the back surface of the ring frame f and the wafer W Mount frame integrated with tape DT A mount frame production unit 118 for producing the MF, a first mount frame conveyance mechanism 129 for conveying the produced mount frame MF, and a separation mechanism 110 for separating the support plate G, which is a glass substrate, from the wafer surface of the mount frame MF. A peeling mechanism 130 for peeling the double-sided adhesive tape T affixed in advance to the surface of the wafer W, and a second mount frame carrying mechanism 135 for carrying the mount frame MF from which the double-sided adhesive tape T has been peeled off by the peeling mechanism 130 The turntable 136 is configured to change the direction of the mount frame MF and convey the mount frame MF, and the mount frame collection unit 137 that stores the mount frames MF in multiple stages.

  The wafer supply unit 102 includes a cassette table, and a cassette C in which wafers W each having a support plate G attached to the pattern surface is stored in multiple stages is placed on the cassette table. At this time, the wafer W maintains a horizontal posture with the pattern surface facing upward.

  The wafer transfer mechanism 103 is configured to turn and move up and down by a drive mechanism (not shown), and the wafer W is transferred from the cassette C to the alignment stage 107 by a robot arm 104 described later.

  The robot arm 104 of the wafer transfer mechanism 103 includes a wafer holding unit (not shown) at its tip. Further, the robot arm 104 is configured such that the wafer holding unit can advance and retreat through the gap between the wafers W stored in the cassette C in multiple stages. A suction hole is provided on the upper surface of the wafer holding unit so that the wafer W is held by vacuum suction from the back surface.

  The alignment stage 107 includes a holding table 30 that covers the entire back surface of the wafer W and vacuum-sucks, and a third peripheral edge measurement mechanism 24. The alignment stage 107 has a configuration in which the driving mechanism such as the laminating roller 27 and the movable base 29 is excluded from the configuration of the laminating mechanism 13 shown in FIGS.

Thus, third round Enhaka constant mechanism 24, as shown in FIG. 9 or 10 is provided on the side of the holding stage, elevated in a state where the holding table 21 is adsorbed hold the support plate G to a predetermined height In this case, the tip portion can be moved back and forth in the gap between the holding stage and the holding table 21 so as to be movable along the linear guide by driving a pulse motor (not shown). In addition, the projector 41 includes a projector 41 that irradiates a laser having a predetermined wavelength across the periphery of the wafer W and the periphery of the support plate G on the back surface side of the wafer W, and a light receiving sensor 42 that receives reflected light. The light receiving sensor 42 is a one-dimensional line sensor in which a plurality of light receiving elements are arranged on a straight line, and transmits light receiving data received by the line sensor to a third arithmetic processing unit included in a controller (not shown). ing. The third peripheral edge measuring mechanism 24 corresponds to the irradiation unit and the light receiving unit of the present invention, and the third arithmetic processing unit corresponds to the arithmetic unit.

  The third arithmetic processing unit (not shown) includes the third arithmetic processing unit in a controller (not shown) in the same manner as the second arithmetic processing unit 25, and uses the position information obtained by the light receiving sensor 42, and uses the position information obtained by the light receiving sensor 42. The shift amount of the center position of the wafer W with respect to the center position and the center position of the support plate G is obtained using the arithmetic expressions (1) and (2).

  The alignment stage 107 is an intermediate position between an initial position where the wafer W is placed and alignment is performed, and a wafer holding table 115 and a ring frame elevating mechanism 126 arranged in multiple stages above a mount frame manufacturing unit 118 described later. The wafer W is configured to be transported and moved in a state where the wafer W is sucked and held over the position. The wafer holding table 115 functions as one mechanism of the alignment means of the present invention.

  The wafer holding table 115 has a circular shape having an outer diameter slightly larger than that of the support plate G so as to cover the surface of the support plate G and can be vacuum-sucked, and above the mount frame production unit 118 by a drive mechanism (not shown). The wafer W with the support plate is moved up and down from the standby position over the position where the wafer W with the support plate is pasted to the ring frame f, and based on the shift amount of the center position of the wafer W with the support plate and the position information of the notch K obtained by the third arithmetic processing unit. In the horizontal direction, the wafer holding table 115 is configured to rotate around the vertical axis.

  Further, the wafer holding table 115 moves up and down in a state where a ring frame f to which a dicing tape DT described later is attached from the back surface is sucked and held. That is, it descends to the position where the dicing tape DT is attached.

  The ring frame supply unit 116 has a wagon shape with a pulley provided at the bottom, and is loaded into the apparatus main body 1. The ring frame f accommodated in multiple stages inside is opened and slid up and sent out.

  The ring frame transport mechanism 117 vacuum-holds the ring frames f housed in the ring frame supply unit 116 one by one from the top in order, and sequentially holds the ring frames f over the alignment stage 107 and the dicing tape attaching position. It is designed to be transported.

  The mount frame preparation unit 118 is attached to the tape supply unit 119 for supplying the dicing tape DT, the pulling mechanism 120 for applying tension to the dicing tape DT, the affixing unit 121 for attaching the dicing tape DT to the ring frame f, and the ring frame f. A cutter mechanism 124 for cutting the dicing tape DT, a peeling unit 123 for peeling unnecessary tape after being cut by the cutter mechanism 124 from the ring frame f, and a tape collecting unit 125 for collecting unnecessary residual tape after cutting. It has.

  The pulling mechanism 120 sandwiches the dicing tape DT from both ends in the width direction and applies tension in the tape width direction. That is, when a soft dicing tape DT is used, vertical tension occurs on the surface of the dicing tape DT along the supply direction due to the tension applied in the tape supply direction. In order to avoid this vertical wrinkle and to apply the dicing tape DT uniformly to the ring frame f, tension is applied from the tape width direction side.

  The affixing unit 121 is disposed at a standby position obliquely below the ring frame f held above the dicing tape DT. The sticking unit 121 is provided with a sticking roller 122 having an appropriate elasticity on the surface made of rubber or an elastic resin material. When the sticking roller 122 reaches the sticking start position, the sticking roller 122 rolls while pressing the non-adhesive surface of the dicing tape DT, and sticks the dicing tape DT across the ring frame f and the back surface of the wafer W.

  The cutter mechanism 124 is disposed below the dicing tape DT on which the ring frame f is placed. When the dicing tape DT is affixed to the ring frame f by the affixing unit 21, the holding of the dicing tape DT by the pulling mechanism 120 is released, and the cutter mechanism 124 is raised. The raised cutter mechanism 124 cuts the dicing tape DT along the ring frame f.

  The peeling unit 123 peels off unnecessary portions of the dicing tape DT cut by the cutter mechanism 124 from the ring frame f. Specifically, when the attachment and cutting of the dicing tape DT to the ring frame f is completed, the holding of the dicing tape DT by the pulling mechanism 120 is released. Next, the peeling unit 123 moves on the ring frame f toward the tape supply unit 119 and peels off unnecessary dicing tape DT after cutting.

  The ring frame elevating mechanism 126 includes a ring holding table that holds the ring frame f by suction. That is, the ring frame elevating mechanism 126 descends when the ring frame f is conveyed to the dicing tape attaching position by the ring frame conveying mechanism 117, and the ring frame f is adsorbed and held by the ring holding table, and the ring that is adsorbed and held. The dicing tape is moved up and down to the position where the dicing tape is applied to the frame f. When the ring frame f is sucked and held on the ring holding table, the ring frame transport mechanism 117 holding the ring frame f returns to the initial position above the ring frame supply unit 116.

  At this time, the wafer holding table 115 that sucks and holds the wafer W is also lowered to the attachment position of the wafer W.

  The first mount frame transport mechanism 129 is adapted to vacuum-suck the mount frame MF in which the ring frame f and the wafer W are integrated and transfer them to a peeling table (not shown) of the peeling mechanism 130.

  The peeling mechanism 130 has a peeling table (not shown) on which the wafer W with a support plate is placed and moved between the peeling mechanism 130 and the separation mechanism 110, a tape supply unit 131 that supplies the peeling tape Ts, and affixing the peeling tape Ts. It comprises a peeling unit 132 for attaching and peeling, and a tape collecting unit 134 for collecting the peeled peeling tape Ts and the double-sided adhesive tape T.

  In the separation mechanism 110, an adsorption member 111 having a diameter larger than that of the support plate G is disposed above the stop position of the peeling table. The adsorption member 111 has an adsorption hole formed in the lower surface that adsorbs the support plate G, and is configured to move up and down between an upper standby position and an action position that contacts and holds the support plate G. In addition, a heater is embedded therein, and the adhesive layer having foamability on the support plate side of the double-sided adhesive tape is heated via the support plate G that abuts.

  The tape supply unit 131 of the peeling mechanism 130 supplies the peeling tape Ts derived from the original fabric roller through the upper part of the peeling table.

  The peeling unit 132 includes a peeling plate 133. The peeling plate 133 is used to remove the surface of the double-sided adhesive tape T remaining on the pattern surface of the wafer W after separation of the support carried by the peeling table (wafer W attached to the mount frame MF via the dicing tape DT). Move while pressing. At this time, the release plate 133 attaches the release tape Ts to the double-sided adhesive tape T while pressing the non-adhesive surface of the release tape Ts, and peels the release tape Ts and the double-sided adhesive tape T together. ing. As the peeling tape Ts, a tape having a width smaller than the diameter of the wafer W is used.

  The second mount frame transport mechanism 135 is configured to vacuum-suck the mount frame MF delivered from the peeling mechanism 130 and transfer it onto the turntable 136.

  The turntable 136 is configured to align the mount frame MF and store it in the mount frame collection unit 137. That is, when the mount frame MF is placed on the turntable 136 by the second mount frame transport mechanism 135, alignment is performed based on the orientation flat of the wafer W, the positioning shape of the ring frame f, and the like. Further, the turntable 136 is turned in order to change the storage direction of the mount frame MF in the mount frame collection unit 137. Further, when the storage direction is determined, the turntable 136 pushes out the mount frame MF with a pusher (not shown) and stores the mount frame MF in the mount frame collection unit 137.

  The mount frame collection part 137 is placed on a mounting table (not shown) that can be raised and lowered. In other words, the mount frame MF pushed by the pusher can be stored in an arbitrary stage of the mount frame collection unit 137 by moving the mounting table up and down.

  Next, a series of processes of the wafer mounting apparatus described above will be described based on the flowchart shown in FIG.

  The wafer holding part of the robot arm 104 is inserted into the gap of the cassette C. The wafers W with supporting plates are sucked and held from below and taken out one by one. The extracted wafer W is transferred to the alignment stage 107 (step S21).

  The third periphery measuring mechanism 24 acquires positional information on both edges of the support G and the wafer W by rotational scanning of the wafer periphery (step S22). The third arithmetic processing unit obtains the center position of the wafer W and the support plate G and the shift amount of the center position of the wafer W with respect to the center position of the support plate G using the acquired position information of both end edges (Step S23, 24). At the same time, the alignment stage 107 performs alignment based on the center position of the support plate G (step S25).

  When the alignment on the alignment stage 107 is completed, the alignment stage 107 is conveyed to the next mount frame production unit 118 while being held by suction on the holding table 21 (step S26). That is, the alignment stage 107 moves to an intermediate position between the wafer holding table 115 and the ring frame lifting mechanism 126.

  When the alignment stage 107 stands by at a predetermined position, the wafer holding table 115 positioned above is lowered, the suction surface of the wafer holding table 115 comes into contact with the surface of the support plate G, and vacuum suction is started. When the vacuum holding of the wafer holding table 115 is started, the suction holding on the holding table 21 side is released, and the wafer W is received in a state where the wafer holding table 115 is held flat by correcting the warp. The alignment stage 107 that has delivered the wafer W with the support plate returns to the initial position.

  When the wafer holding table 115 sucks and holds the wafer W with the support, the ring frames f housed in multiple stages in the ring frame supply unit 116 are vacuum-sucked one by one by the ring frame transport mechanism 117 and taken out. The taken-out ring frame f is aligned on an alignment stage (not shown) and then conveyed to a pasting position above the dicing tape DT.

  When the ring frame f held by the ring frame transport mechanism 117 reaches the affixing position, the ring frame elevating mechanism 126 waiting upward is lowered, and the surface of the ring frame f is covered with the ring holding table provided below the ring frame elevating mechanism 126. Hold by adsorption. Along with this suction, the ring frame transport mechanism 117 releases the suction of the ring frame and returns to the initial position.

  Before the ring frame transport mechanism 117 returns to the initial position, a controller (not shown) is obtained by the third arithmetic processing unit, and the center position of the wafer W is determined based on the positional information of the notch K and the position of the wafer W. The position is corrected by moving the wafer holding table 115 in the horizontal direction and around the rotation axis so as to coincide with the center position (step S27).

  When the position correction of the wafer holding table 115 is completed, the wafer holding table 115 is lowered to the position where the dicing tape DT is applied.

  When the wafer holding table 115 reaches the attaching position, the ring frame elevating mechanism 126 is further lowered to the attaching position of the dicing tape DT. When the ring frame elevating mechanism 126 reaches a predetermined position, each is held by a holding mechanism (not shown). At this time, supply of the dicing tape DT from the tape supply unit 119 is started. At the same time, the sticking roller 122 moves to the sticking start position. That is, the bottom surface of the wafer holding table 115 that sucks and holds the surface of the support G is accommodated in the opening provided in the center of the ring frame lifting mechanism 126, and the ring frame f and the wafer W are bonded to the adhesive surface of the dicing tape DT. Proximity.

  When the application roller 122 reaches the application start position, the tension mechanism 120 holds both ends of the dicing tape DT in the width direction, and tension is applied in the tape width direction.

  Next, the affixing roller 122 is raised, and the dicing tape DT is affixed to the end of the ring frame f. When the dicing tape DT is affixed to the end of the ring frame f, the affixing roller 122 rolls toward the tape supply unit 119 that is the standby position. At this time, the affixing roller 122 rolls while pressing the upper surface (non-adhesive surface) of the dicing tape DT, and affixes the dicing tape DT across the ring frame f and the back surface of the wafer W (step S28). As a result, a mount frame MF in which the ring frame f and the wafer W are integrated is manufactured.

  When the sticking roller 122 reaches the end of the sticking position, the holding of the dicing tape DT by the pulling mechanism 120 is released.

  At the same time, the cutter mechanism 124 rises and cuts the dicing tape DT along the ring frame f. When the cutting of the dicing tape DT is completed, the peeling unit 123 moves toward the tape supply unit 119 and peels unnecessary dicing tape DT.

  The mount frame MF created by attaching the dicing tape DT is sucked and held by the ring frame lifting mechanism 126 with respect to the ring frame f, and the wafer W is interlocked while being sucked and held by the wafer holding table 115. It is conveyed to.

  At this time, a holding table (not shown) moves below the mount frame MF, and the mount frame MF is placed on the holding table. The mounted mount frame MF is sucked and held by the first mount frame transport mechanism 129 and transferred to a peeling table (not shown).

  The peeling table on which the mount frame MF is placed moves downward to the peeling unit 132, and then moves to the separation position of the separation mechanism 110 (step S29).

  When the peeling table reaches the separation position, the suction member 111 is lowered and heated while contacting the surface of the support plate G, and the adhesive layer is fired to separate the support plate G (step S30). The separated support plate G is conveyed to a collection unit (not shown) while being adsorbed and held by the adsorbing member 111. The mount frame MF from which the support plate G is separated moves to the peeling position of the peeling unit 132 while being held on the peeling table (step S31).

  In the peeling unit 132, the peeling plate 133 is applied while pressing the peeling tape Ts supplied from the tape supply unit 131 to the double-sided adhesive tape T remaining on the surface of the wafer W. The peeling plate 133 peels the double-sided adhesive tape T from the surface of the wafer W together with the peeling tape Ts while peeling the attached peeling tape Ts (Step S32).

  The mount frame MF that has completed the peeling process of the double-sided adhesive tape T is moved to the standby position of the second mount frame transport mechanism 135 by the peeling table (step S33).

  The mount frame MF paid out from the peeling mechanism 130 is transferred to the turntable 136 by the second mount frame transport mechanism 135. The transferred mount frame MF is aligned by an orientation flat or a notch, and the accommodation direction is adjusted. When the alignment and the storage direction are determined, the mount frame MF is pushed out by the pusher and stored in the mount frame collection unit 137 (step S34).

  As described above, by using the position information of both edges of the wafer W and the support plate G acquired by the third peripheral edge measurement mechanism 24, the center position of the wafer W and the support plate G, the position information of the notch K, and the support The deviation amount of the center position of the wafer W with respect to the plate G can be obtained with high accuracy. Further, by using these calculation results, even a wafer W with a support plate can be bonded by performing position correction so that the center position of the wafer W coincides with the center position of the ring-shaped frame f. . That is, in a state where the surface of the support G is sucked and held by the wafer holding table 115, the wafer W is rotated in the horizontal direction and around the wafer central axis based on the deviation amount of the center position of the wafer W, and the bonding position to the ring frame f is obtained. After performing the above correction, both members can be bonded together with high accuracy. Accordingly, the wafer W can be accurately cut into chips in a subsequent dicing process.

  The present invention can also be implemented in the following forms.

  (1) In each of the above embodiments, the laser is applied to the peripheral edges of the back surface of the wafer W and the support plate G. However, an ultrasonic wave can be used instead of the laser.

  (2) Further, each position information obtained by the second arithmetic processing unit 25 of the support plate laminating apparatus according to the first embodiment, the amount of deviation of the wafer W, and the like are once stored in a storage means such as a memory or a hard disk, and this storage Information is transferred to the wafer mount apparatus using a LAN (Local Area Network) or wireless, and transmitted when a wafer W with a predetermined support plate is bonded to the ring-shaped frame f in the wafer mount apparatus. By referring to the information thus obtained, position correction may be performed based on the content so that the center position of the wafer W matches the center position of the ring-shaped frame f. Further, it may be configured such that what is stored in the storage medium is set in an individual device and read out.

  (3) In Example 1 described above, the supporting plate G is bonded to the wafer W through the double-sided adhesive tape in the bonding mechanism 13 in an open state. However, the mechanism 13 is sealed and performed in a vacuum state. It may be configured.

It is a perspective view which shows the whole support plate bonding apparatus which concerns on one Example of this invention. It is a top view of an alignment stage. It is a front view including the electrical configuration of the alignment stage. It is a side view of a sticking unit. It is a figure explaining operation | movement of a sticking unit. It is a figure explaining operation | movement of a sticking unit. It is a figure explaining operation | movement of a sticking unit. It is a top view which shows the principal part structure of a bonding mechanism. It is a front view which shows the principal part structure of a bonding mechanism. It is a front view which shows operation | movement of a bonding mechanism. It is a top view which shows the state which bonded the support plate to the wafer. It is a figure explaining the operation | movement at the time of laser irradiation. It is a figure explaining the operation | movement at the time of laser irradiation. It is the top view and partial enlarged view which show the notch part of a wafer. It is a figure which shows the shift | offset | difference of a wafer edge position. It is a flowchart which shows the process of a support plate bonding apparatus. 1 is a perspective view showing an entire wafer mount apparatus according to an embodiment of the present invention. It is a flowchart which shows the process of a wafer mounting apparatus.

Explanation of symbols

3 ... Wafer transfer mechanism 4 ... Alignment stage (support plate bonding device)
13 ... Lamination mechanism 21 ... Holding table (Lamination mechanism)
DESCRIPTION OF SYMBOLS 22 ... Holding stage 23 ... Rotating mechanism 24 ... 3rd periphery measuring mechanism 25 ... 2nd arithmetic processing part 27 ... Bonding roller 107 ... Alignment stage (wafer mounting apparatus)
110 ... Separation mechanism W ... Wafer T ... Double-sided adhesive tape

Claims (3)

At least one of the center position of the semiconductor wafer to which the semi-transmission or total reflection type support plate is bonded and the detection portion for positioning at the peripheral portion of the semiconductor wafer is detected, and the handling position of the semiconductor wafer is detected using the detection result. A method of positioning a semiconductor wafer with a support plate to determine
The wafer toward the non-bonding surface of the semiconductor wafer where the was to the support plate via a double-sided adhesive tape adhered to fit in the support plate having a diameter more than the size of the semiconductor wafer to the peripheral edge of the semiconductor wafer Reflected light that scans along the peripheral edge while irradiating a laser of a predetermined wavelength having a predetermined width in the radial direction from the projector, and the laser reflects back from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate In accordance with the change in the light receiving state when the light is received by the light receiver, the detection process of detecting the edge of the semiconductor wafer and the edge of the support plate,
Using the detected information of the both edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and the center position of the semiconductor wafer and the peripheral edge of the semiconductor wafer based on the change of the distance A determination process for determining at least one of the detection sites;
A method of positioning a semiconductor wafer with a support plate, comprising: In the manufacturing method of the semiconductor wafer using the positioning method of the semiconductor wafer with a support plate according to claim 1,
A bonding step of bonding the support plate having a size equal to or larger than the diameter of the semiconductor wafer to the semiconductor wafer;
The wafer toward the non-bonding surface of the semiconductor wafer where the was to the support plate via a double-sided adhesive tape adhered to fit in the support plate having a diameter more than the size of the semiconductor wafer to the peripheral edge of the semiconductor wafer Reflected light that scans along the peripheral edge while irradiating a laser of a predetermined wavelength having a predetermined width in the radial direction from the projector, and the laser reflects back from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate In accordance with the change in the light receiving state when the light is received by the light receiver, the detection process of detecting the edge of the semiconductor wafer and the edge of the support plate,
Using the detected information of the both edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and the center position of the semiconductor wafer and the peripheral edge of the semiconductor wafer based on the change of the distance A determination process for determining at least one of the detection sites;
A storage step of storing in the storage means the position information of at least one of the detection position at the center position of the semiconductor wafer and the peripheral portion of the semiconductor wafer obtained from the determination result;
A transport process for transporting the semiconductor wafer with the support plate after grinding to a wafer mount device for attaching and holding the semiconductor wafer with an adhesive tape in the center of the ring-shaped frame;
A transfer process of transferring the position information stored in the storage means to a wafer mount device;
When the semiconductor wafer with the support plate transported to the wafer mounting apparatus is attached and held in the center of the ring-shaped frame via an adhesive tape, the semiconductor wafer is attached using the positional information transferred from the storage means. A correction process for correcting the position to be attached and held;
Based on the correction, a holding process of attaching and holding a semiconductor wafer with a support plate in the center of the ring-shaped frame,
A separation step of separating the support plate from the semiconductor wafer with the support plate integrated with the ring frame;
A peeling process of peeling the double-sided pressure-sensitive adhesive sheet from the surface of the semiconductor wafer from which the support plate is separated;
A method for producing a semiconductor wafer, comprising: A semiconductor wafer positioning device with a support plate that determines the handling position of a semi-transparent or total reflection type support plate bonded via a double-sided adhesive tape,
Holding means for holding a central portion of the semiconductor wafer bonded so as to fit in a support plate having a size equal to or larger than the diameter of the semiconductor wafer;
Irradiation means for irradiating a laser with a predetermined wavelength having a predetermined width in the radial direction of the semiconductor wafer from the holding surface side held by the holding means toward the periphery of the semiconductor wafer with a support plate;
A light receiving means for receiving reflected light that is irradiated from the irradiation means to the periphery of the semiconductor wafer with a support plate and reflected and returned by the holding surface of the semiconductor wafer and the bonding surface of the support plate;
A moving means for relatively moving the set of the irradiation means and the light receiving means and the holding means so that the set of the irradiation means and the light receiving means scans the periphery of the semiconductor wafer with the support plate;
While irradiating a laser with a predetermined wavelength having a predetermined width in the wafer radial direction from the non-bonded surface side of the semiconductor wafer bonded to the support plate via a double-sided adhesive tape toward the periphery of the semiconductor wafer Scanning along the periphery, according to the change in the light receiving state when the reflected light reflected by the laser reflected from the non-bonding surface of the semiconductor wafer and the bonding surface of the support plate is received by the light receiving means, Obtain the position information of the edge of the semiconductor wafer and the edge of the support plate,
Using the information of the both end edges, the distance from the edge of the semiconductor wafer to the edge of the support plate is obtained, and based on the change in the distance , at least the detection position at the center position of the semiconductor wafer and the peripheral portion of the semiconductor wafer. A computing means for obtaining one;
Alignment means for aligning the handling position of the semiconductor wafer with a support plate by rotating the holding means horizontally and around the central axis according to the calculation result of the calculation means;
An apparatus for positioning a semiconductor wafer with a support plate, comprising:

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