JP4528758B2 - Transfer tape and semiconductor device manufacturing method using the transfer tape - Google Patents

Description

  The present invention relates to a transfer tape (including a die attach film) used for conveyance after back grinding of a wafer in DBG (Dicing Before Grinding) technology and a method of manufacturing a semiconductor device using the transfer tape.

  In recent years, it has been desired to reduce the thickness of a semiconductor chip in order to mount it on a thin card-like package or to reduce the mounting area by stacking a plurality of semiconductor chips. However, if the back surface of the wafer on which element formation has been completed is ground and thinned, diced and divided into individual semiconductor chips, the wafer is cracked or back surface chipping occurs. In addition, thin wafers are difficult to handle and may be damaged during transport between manufacturing apparatuses.

  In order to reduce such wafer cracking and back surface chipping as much as possible, DBG technology (first dicing method) is employed. In DBG, after cutting (grooves) to a predetermined depth from the main surface (element forming surface side) of the wafer, the back surface of the wafer is ground and polished to simultaneously singulate and thin (for example, patents) Reference 1).

  By the way, a non-metallic tape is usually used for a transfer tape (including a die attach film) used for conveyance after back grinding of a wafer in DBG. However, the non-metallic tape is shrunk due to its material properties, and the chips interfere with each other during conveyance to cause chipping. Further, when the tape expands and contracts, it becomes difficult to ensure the alignment of the chip, and the meandering phenomenon of the chip occurs, causing a recognition failure in the pickup process for die bonding.

Further, when a die attach film is used as the transfer tape, it is necessary to cut the die attach film after the transfer. At this time, if the alignment of the chips is not ensured, cutting with a dicing blade is impossible, and it is necessary to introduce an expensive laser cutting device, so that an increase in cost is inevitable.
JP 61-112345 A

  The present invention has been made in view of the circumstances as described above, and an object of the invention is to provide a transfer tape capable of suppressing chip shrinkage, suppressing chipping due to chip interference, and ensuring chip alignment. Is to provide.

  It is another object of the present invention to provide a method for manufacturing a semiconductor device using a transfer tape that can ensure chip alignment, reduce recognition failures with a die bonding pickup, and can be cut linearly with a dicing blade.

According to one aspect of the present invention, a nonmetallic tape as a base material, an adhesive layer or a die attach film formed on one surface of the nonmetallic tape, and formed on one or the other surface of the nonmetallic tape There is also provided a transfer tape used for conveyance after polishing the back surface of a wafer in DBG (Dicing Before Grinding) technology comprising a shrinkage-preventing metal layer that suppresses shrinkage of the non-metallic tape.

According to another aspect of the present invention, a first non-metallic tape and a second non-metallic tape that is bonded to one surface of the first non-metallic tape and serves as a base material together with the first non-metallic tape. An anti-shrinkage metal layer interposed between the first non-metallic tape and the first non-metallic tape to suppress shrinkage of the first and second non-metallic tapes; Provided is a transfer tape used for conveyance after polishing the back surface of a wafer in DBG (Dicing Before Grinding) technology comprising an adhesive layer or a die attach film formed on one surface of a second non-metallic tape. The

According to still another aspect of the present invention, a non-metallic tape as a base material, a die attach film formed on one surface of the non-metallic tape, and between the non-metallic tape and the die attach film. An anti-shrinkage metal layer that is interposed to suppress shrinkage of the non-metallic tape, and an adhesive layer that is interposed in a region other than the anti-shrinkage metal layer between the non-metallic tape and the die attach film. There is provided a transfer tape used for conveyance after the backside polishing of a wafer in DBG (Dicing Before Grinding) technology .

  According to another aspect of the present invention, a step of forming a semiconductor element in a semiconductor wafer, a step of half-cut dicing the semiconductor wafer along a dicing line, and forming a groove on an element forming surface, and the semiconductor A step of attaching a surface protection tape to the surface of the semiconductor element formed on the wafer, and a step of removing the back surface of the surface of the semiconductor element of the semiconductor wafer to at least the depth reaching the groove and dividing the semiconductor chip into individual semiconductor chips. And a step of peeling off the surface protection tape after affixing a transfer tape to the back surface of the semiconductor element forming surface of the semiconductor wafer, and a step of picking up the semiconductor chip from the transfer tape. The tape is a non-metallic tape as a base material and one of the non-metallic tape. An adhesive layer or a die attach film formed on a surface of the semiconductor wafer and attached to the back surface of the semiconductor element forming surface of the semiconductor wafer; and formed on one or the other surface of the nonmetallic tape, and shrinkage of the nonmetallic tape. There is provided a method for manufacturing a semiconductor device including a shrinkage-preventing metal layer that suppresses the above.

  According to still another aspect of the present invention, a step of forming a semiconductor element in a semiconductor wafer, a step of half-cut dicing the semiconductor wafer along a dicing line to form a groove on an element formation surface, A step of attaching a surface protection tape to the semiconductor element forming surface of the semiconductor wafer, and removing the back surface of the semiconductor element forming surface of the semiconductor wafer to at least the depth reaching the groove to divide into individual semiconductor chips. And a step of attaching a transfer tape to the back surface of the semiconductor element forming surface of the semiconductor wafer, then peeling off the surface protection tape, and picking up the semiconductor chip from the transfer tape, The transfer tape includes a first non-metallic tape and the first non-metallic tape. A second non-metallic tape formed on the surface of the first non-metallic tape and serving as a base material together with the first non-metallic tape, and interposed between the first non-metallic tape and the second non-metallic tape, A shrinkage-preventing metal layer that suppresses shrinkage of the first and second nonmetallic tapes, and the back surface of the semiconductor element forming surface of the semiconductor wafer formed on one surface of the first or second nonmetallic tape. A method of manufacturing a semiconductor device is provided that includes an adhesive layer or a die attach film attached to the substrate.

  According to the present invention, it is possible to obtain a transfer tape that suppresses tape shrinkage, suppresses chipping due to chip interference, and ensures chip alignment.

  In addition, it is possible to obtain a method for manufacturing a semiconductor device using a transfer tape that can ensure chip alignment, reduce recognition failures with a die bonding pickup, and can be cut linearly with a dicing blade.

Embodiments of the present invention will be described below with reference to the drawings.
[First Embodiment]
1 and 2 are a plan view and a cross-sectional view, respectively, for explaining a transfer tape according to the first embodiment of the present invention. In the transfer tape of the first embodiment, a non-metallic tape serving as a base material, for example, a polyolefin tape 11 is provided on one surface with an anti-shrinkage metal layer 13 for suppressing the shrinkage of the polyolefin tape 11, and the other The adhesive layer 12 is formed on the front surface (back surface).

  The shrinkage-preventing metal layer 13 is formed of a metal-based material plate, film, foil, wire, or the like that extends along a direction parallel to the direction in which the polyolefin tape 11 is applied (arrow A in the figure). As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The width of the shrinkage prevention metal layer 13 can be selected from an arbitrary value corresponding to the wafer size from about 0.5 μm, and the thickness of the shrinkage prevention metal layer 13 can be selected from about 0.5 μm to a value corresponding to the adhesive layer 12. it can.

  The transfer tape is used as follows, for example, in the manufacturing process of a semiconductor device. That is, a semiconductor element is formed in a semiconductor wafer, the semiconductor wafer is half-cut and diced along a dicing line to form a groove on the element formation surface, and then a surface protection tape is attached to the formation surface of the semiconductor element. Subsequently, the back surface of the semiconductor element formation surface is ground to a depth that reaches at least the above-mentioned groove, and singulation and thinning are performed. Thereafter, the adhesive layer 12 of the transfer tape is attached to the back surface of the semiconductor element forming surface of the semiconductor wafer, and the surface protection tape is peeled off. Thereafter, a semiconductor chip is picked up from the transfer tape, and a semiconductor device is completed through a mounting process such as die bonding and wire bonding, a sealing process in a package, and the like.

  According to the transfer tape having the above-described configuration, the shrinkage-preventing metal layer 13 can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

  Therefore, the manufacturing method of the semiconductor device using this transfer tape can reduce the recognition failure in the die bonding pickup and can also cut linearly with the dicing blade.

(Modification 1 of transfer tape)
FIG. 3 is a cross-sectional view showing Modification 1 of the transfer tape shown in FIGS. In this transfer tape, an adhesive layer 12 is formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and the shrinkage of the polyolefin tape 11 is between the polyolefin tape 11 and the adhesive layer 12. This is a configuration in which a shrinkage-preventing metal layer 13 is interposed.

  Even in such a configuration, the shrinkage-preventing metal layer 13 can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

(Modification 2 of transfer tape)
FIG. 4 is a plan view showing Modification Example 2 of the transfer tape shown in FIGS. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer. The shrinkage-preventing metal layer 13 is formed of a metal-based material plate, film, foil, line, or the like that extends across the center of the wafer 10. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The width of the shrinkage prevention metal layer 13 can be selected from an arbitrary value corresponding to the wafer size from about 0.5 μm, and the thickness of the shrinkage prevention metal layer 13 can be selected from about 0.5 μm to a value corresponding to the adhesive layer 12. .

  Even in such a configuration, shrinkage of the polyolefin tape 11 as a base material can be suppressed by the shrinkage-preventing metal layer 13 to suppress chipping due to chip interference and to ensure chip alignment.

[Second Embodiment]
FIG. 5 is a plan view of a transfer tape according to the second embodiment of the present invention. The transfer tape of the second embodiment is a non-metallic tape 13-1, 13-2, 13 that suppresses the shrinkage of the polyolefin tape 11 on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11. 3 is provided, and an adhesive layer 12 is formed on the other surface of the polyolefin tape 11.

  The transfer tape includes three metal-based plates, films, and films extending along a direction parallel to the direction A in which the shrinkage-preventing metal layers 13-1, 13-2, and 13-3 are applied with the polyolefin tape 11. It is formed of foil and wire. The distance between the shrinkage-preventing metal layers 13-1, 13-2, 13-3 is set to a distance that is not affected by the shrinkage of the polyolefin tape 11. In FIG. 5, three anti-shrinkage metal layers 13-1, 13-2, and 13-3 are provided, but two or four or more may be used.

  As the metal-based material, a metal such as aluminum or copper can be used, but various alloys can be used instead of a single element metal. The width of the shrinkage-preventing metal layers 13-1, 13-2, 13-3 can be set to an arbitrary value from about 0.5 μm or more, and the thickness of the shrinkage-preventing metal layer 13 is from about 0.5 μm. A value corresponding to can be selected.

  According to the transfer tape having the above-described configuration, the shrinkage-preventing metal layers 13-1, 13-2, and 13-3 suppress the shrinkage of the polyolefin tape 11 that is the base material, thereby suppressing chipping due to chip interference. In addition, the chip alignment can be ensured.

(Modification 3 of transfer tape)
As in FIG. 3, the transfer tape has an adhesive layer 12 formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and between the polyolefin tape 11 and the adhesive layer 12, It is also possible to adopt a configuration in which shrinkage-preventing metal layers 13-1, 13-2, 13-3 that suppress shrinkage of the polyolefin tape 11 are interposed.

(Modification 4 of transfer tape)
FIG. 6 is a plan view showing a modification of the transfer tape shown in FIG. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer. The shrinkage-preventing metal layers 13-1, 13-2, and 13-3 are formed of three metal-based plates, films, foils, lines, and the like that extend across the wafer 10. The distance between the shrinkage-preventing metal layers 13-1, 13-2, 13-3 is set to a distance that is not affected by the shrinkage of the polyolefin tape 11. In FIG. 6, three anti-shrinkage metal layers 13-1, 13-2, and 13-3 are provided, but two or four or more may be used.

  As this metallic material, metals such as aluminum and copper can be used. Further, various alloys can be used instead of a single element metal. The width of the shrinkage-preventing metal layers 13-1, 13-2, 13-3 can be selected from an arbitrary value of about 0.5 μm or more, and the thickness of the shrinkage-preventing metal layers 13-1, 13-2, 13-3. The value corresponding to the adhesive layer 12 can be selected from about 0.5 μm.

  Even in such a configuration, the shrinkage-preventing metal layers 13-1, 13-2, and 13-3 suppress the shrinkage of the polyolefin tape 11 that is a base material, thereby suppressing chipping due to chip interference. Can be ensured.

[Third Embodiment]
FIG. 7 is a plan view of a transfer tape according to a third embodiment of the present invention. The transfer tape of the third embodiment is provided with a non-metallic tape 13A that suppresses the shrinkage of the polyolefin tape 11 on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and the polyolefin tape 11 The adhesive layer 12 is formed on the other surface.

  The shrinkage-preventing metal layer 13A is formed of a lattice-like metal material plate, film, foil, or the like. The distance between the lattices in the shrinkage-preventing metal layer 13A is set to a distance that is not affected by the shrinkage of the polyolefin tape 11.

  As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. An arbitrary value can be selected from about 0.5 μm for the lattice width of the anti-shrinkage metal layer 13A, and a value corresponding to the adhesive layer 12 can be selected from about 0.5 μm for the thickness of the anti-shrinkage metal layer 13A.

  According to the transfer tape configured as described above, the shrinkage-preventing metal layer 13A can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

(Modification 5 of transfer tape)
As in FIG. 3, the transfer tape has an adhesive layer 12 formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and between the polyolefin tape 11 and the adhesive layer 12, A configuration in which a shrinkage-preventing metal layer 13 </ b> A that suppresses shrinkage of the polyolefin tape 11 is interposed may be employed.

(Modification 6 of transfer tape)
FIG. 8 is a plan view showing a modification of the transfer tape shown in FIG. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer. The shrinkage-preventing metal layer 13 </ b> A is formed of a grid-like metal material plate, film, foil, or the like corresponding to the wafer 10. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. An arbitrary value can be selected from the width of the anti-shrinkage metal layer 13A from about 0.5 μm, and a value corresponding to the adhesive layer 12 can be selected from the thickness of the anti-shrinkage metal layer 13A from about 0.5 μm.

  Even in such a configuration, the shrinkage-preventing metal layer 13A can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

[Fourth Embodiment]
FIG. 9 is a plan view of a transfer tape according to the fourth embodiment of the present invention. The transfer tape according to the fourth embodiment is provided with a non-shrinkable metal layer 13B for suppressing shrinkage of the polyolefin tape 11 on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and the polyolefin tape 11 The adhesive layer 12 is formed on the other surface.

  The shrinkage-preventing metal layer 13B is formed of an annular metal material plate, film, foil, line, or the like along the outer periphery of the wafer.

  As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The shrinkage prevention metal layer 13B can have an arbitrary width of about 0.5 μm or more, and the shrinkage prevention metal layer 13B can have a thickness corresponding to the adhesive layer 12 from about 0.5 μm.

  According to the transfer tape having the above-described configuration, the shrinkage-preventing metal layer 13B can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

(Modification 7 of transfer tape)
As in FIG. 3, the transfer tape has an adhesive layer 12 formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and between the polyolefin tape 11 and the adhesive layer 12, A configuration in which a shrinkage-preventing metal layer 13B that suppresses shrinkage of the polyolefin tape 11 is interposed may be employed.

(Modification 8 of transfer tape)
FIG. 10 is a plan view showing a modification of the transfer tape shown in FIG. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer. The shrinkage-preventing metal layer 13B is formed of an annular metal material plate, film, foil, line, or the like along the outer periphery of the wafer. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The shrinkage prevention metal layer 13B can have an arbitrary width of about 0.5 μm or more, and the shrinkage prevention metal layer 13B can have a thickness corresponding to the adhesive layer 12 from about 0.5 μm.

  Even in such a configuration, the shrinkage-preventing metal layer 13B can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

[Fifth Embodiment]
FIG. 11 is a plan view of a transfer tape according to the fifth embodiment of the present invention. The transfer tape of the fifth embodiment is provided with a non-metallic tape 13C for suppressing the shrinkage of the polyolefin tape 11 on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and the polyolefin tape 11 The adhesive layer 12 is formed on the other surface.

  The shrinkage-preventing metal layer 13C is formed of a circular metal-based material plate, film, foil, and the like along the outer periphery of the wafer.

  As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The thickness of the shrinkage-preventing metal layer 13 can be selected from a value corresponding to the adhesive layer 12 from about 0.5 μm.

  According to the transfer tape configured as described above, the shrinkage-preventing metal layer 13C can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment.

(Modification 9 of transfer tape)
As in FIG. 3, the transfer tape has an adhesive layer 12 formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and between the polyolefin tape 11 and the adhesive layer 12, You may comprise by interposing the shrink prevention metal layer 13C which suppresses shrinkage | contraction of the said polyolefin tape 11. FIG.

(Modification 10 of transfer tape)
12 is a plan view showing a modification of the transfer tape shown in FIG. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer. The shrinkage-preventing metal layer 13C is formed of a circular metal-based material plate, film, foil, and the like along the outer periphery of the wafer. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. A value corresponding to the adhesive layer 12 can be selected from about 0.5 μm for the thickness of the shrinkage-preventing metal layer 13C.

  Even in such a configuration, the shrinkage-preventing metal layer 13 suppresses shrinkage of the polyolefin tape 11 which is a base material after the back grinding process, thereby suppressing chipping due to chip interference and improving chip alignment. It can be secured.

[Sixth Embodiment]
FIG. 13 is a plan view of a transfer tape according to the sixth embodiment of the present invention. The transfer tape of the sixth embodiment is provided with non-shrinkage metal layers 13-1D and 13-2D for suppressing shrinkage of the polyolefin tape 11 on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11. The adhesive layer 12 is formed on the other surface of the polyolefin tape 11.

  The shrinkage-preventing metal layers 13-1D and 13-2D are formed of a metal-based material plate, film, foil, wire, or the like extending along a direction parallel to the direction A in which the polyolefin tape 11 is applied. Further, the shrinkage prevention metal layer 13-2D has a notch (mark) 15 formed at a position corresponding to the notch 14 of the wafer 10 indicated by a broken line. The notch 15 facilitates positioning when mounted on the XY stage by detecting instead of the notch 14 of the wafer because the direction of the wafer becomes important in the process after back grinding, particularly the mounting process. It is.

  As the metal-based material, a metal such as aluminum or copper can be used, but various alloys can be used instead of a single element metal. The width of the anti-shrinkage metal layers 13-1D and 13-2D can be selected from an arbitrary value of about 0.5 μm or more, and the thickness of the anti-shrinkage metal layers 13-1D and 13-2D is about 0.5 μm. A value corresponding to layer 12 can be selected.

  According to the transfer tape having the above-described configuration, the shrinkage-preventing metal layers 13-1D and 13-2D can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and the chip. Alignment can be secured. Further, by detecting the notch 15 of the shrinkage-preventing metal layer in place of the notch 14 of the wafer 10, positioning when mounting on the XY stage can be facilitated.

(Modification 11 of transfer tape)
As in FIG. 3, the transfer tape has an adhesive layer 12 formed on one surface of a non-metallic tape as a base material, for example, a polyolefin tape 11, and between the polyolefin tape 11 and the adhesive layer 12, A configuration in which shrinkage-preventing metal layers 13-1D and 13-2D that suppress shrinkage of the polyolefin tape 11 are interposed may be employed.

(Modification 12 of transfer tape)
FIG. 14 is a plan view showing a modification of the transfer tape shown in FIG. This transfer tape is applied to a pre-cut tape, and is used after being cut into the same external shape and size as the wafer 10. The shrinkage-preventing metal layers 13-1D and 13-2D are formed of a metal-based material plate, film, foil, line, or the like extending across the wafer. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The width of the anti-shrinkage metal layers 13-1D and 13-2D can be selected from an arbitrary value of about 0.5 μm or more, and the thickness of the anti-shrinkage metal layers 13-1D and 13-2D is about 0.5 μm. A value corresponding to layer 12 can be selected.

  Even in such a configuration, the shrinkage-preventing metal layer 13 can suppress shrinkage of the polyolefin tape 11 as a base material, thereby suppressing chipping due to chip interference and ensuring chip alignment. Further, by detecting the notch 15 of the shrinkage-preventing metal layer instead of the notch 14 of the wafer, positioning when mounting on the XY stage can be facilitated.

  In the sixth embodiment and the sixth modification, the example in which the notch 14 of the wafer 10 and the notch 15 of the shrinkage prevention metal layer 13-2D are arranged at the same position (overlapping) is shown. However, it is not always necessary to form the notches 15 so as to overlap each other, as long as the correspondence can be recognized.

  Further, although the cutout portion 15 is provided only in one of the shrinkage prevention metal layers 13-2D, the cutout prevention metal layer 13-1D may be provided with a cutout portion and disposed symmetrically.

  Further, as shown in FIGS. 15 and 16, a mark 16 is formed with a metal-based material plate, film, foil, line, or the like at a position corresponding to the notch 14 of the wafer 10, and detected instead of the notch 14 of the wafer 10. Then, positioning when mounting on the XY stage can be facilitated. Also in this case, of course, it is not necessary to arrange the notch 14 and the mark 16 at the same position.

  In the first to fifth embodiments, the positional relationship between the notch 14 and the notch 15, the notch 14 and the mark 16, the notch 14 and the metal-based material plate, film, foil, and line is determined. Is also applicable.

  Furthermore, the shrinkage-preventing metal layer is not limited to the shapes of the first to sixth embodiments described above, but can be applied to polygons such as squares, rectangles, triangles, quadrilaterals, pentagons, and ellipses.

(Transfer tape manufacturing method)
17 to 19 are cross-sectional views for explaining a method for manufacturing the transfer tape shown in FIGS. 1 and 2. First, as shown in FIG. 17, a shrinkage-preventing metal layer 13 made of a metal-based material is pressure-bonded or bonded to one surface of a polyolefin tape 11 serving as a base material.

  Next, as shown in FIG. 18, an adhesive is applied to the other surface of the polyolefin tape 11 (the back surface of the surface on which the anti-shrinkage metal layer 13 is formed) to form an adhesive layer 12.

  In this way, a transfer tape as shown in FIG. 19 in which the shrinkage-preventing metal layer 13 is formed on one surface of the polyolefin tape 11 and the adhesive layer 12 is formed on the other surface is manufactured.

  When the anti-shrinkage metal layer 13 is formed on one surface of the polyolefin tape 11, a metal material is printed on one surface of the polyolefin tape 11 to form the anti-shrink metal layer 13 as shown in FIG. You may do it.

  Alternatively, the adhesive layer 12 may be formed by applying an adhesive to the surface of the polyolefin tape 11 on which the shrinkage-preventing metal layer 13 is formed.

  Furthermore, although the transfer tape manufacturing method according to the first embodiment has been described as an example, the transfer tape according to the second to sixth embodiments can be basically formed in the same manner.

(Modification 1 of transfer tape manufacturing method)
21 to 24 are cross-sectional views for explaining another method for manufacturing the transfer tape shown in FIGS. 1 and 2. First, as shown in FIG. 21, a metal substance is pressure-bonded or bonded to one surface of a polyolefin tape 11 serving as a base material. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The metallic material is a plate, a film, a foil, or the like, and a value corresponding to the adhesive layer 12 is selected from a thickness of about 0.5 μm.

  Next, as shown in FIG. 22, the metal-based material is selectively removed by etching to form a shrinkage-preventing metal layer 13.

  Thereafter, as shown in FIG. 23, an adhesive is applied to the other surface of the polyolefin tape 11 (the back surface of the surface on which the shrinkage-preventing metal layer 13 is formed) to form the adhesive layer 12.

  In this way, a transfer tape as shown in FIG. 24 in which the shrinkage-preventing metal layer 13 is formed on one surface of the polyolefin tape 11 and the adhesive layer 12 is formed on the other surface is manufactured.

  Even with such a manufacturing method, a transfer tape substantially similar to the above-described manufacturing method can be manufactured.

  Note that the adhesive layer 12 may be formed by applying an adhesive to the surface of the polyolefin tape 11 on which the shrinkage-preventing metal layer 13 is formed.

  Although the transfer tape manufacturing method according to the first embodiment has been described as an example here, the transfer tapes according to the second to sixth embodiments can be basically formed in the same manner.

(Modification 2 of transfer tape manufacturing method)
25 to 28 are cross-sectional views for explaining still another method for manufacturing the transfer tape. First, as shown in FIG. 25, the anti-shrinkage metal layer 13 made of a metal-based material is sandwiched between the first and second polyolefin tapes 11-1 and 11-2 as the base material and shown in FIG. Crimp or glue like so.

  Next, as shown in FIG. 27, an adhesive is applied to one surface of the first and second polyolefin tapes 11-1 and 11-2 sandwiching the shrinkage-preventing metal layer 13 and the adhesive layer 12. Form.

  In this way, a transfer tape as shown in FIG. 28 in which the adhesive layer 12 is formed on one surface of the first and second polyolefin tapes 11-1 and 11-2 sandwiching the shrinkage-preventing metal layer 13 is manufactured. To do.

  In such a manufacturing method, a transfer tape in which the shrinkage-preventing metal layer 13 is sandwiched between the first and second polyolefin tapes 11-1 and 11-2 serving as the base material can be manufactured.

  In the above-described manufacturing method, the case where the polyolefin tape as the base material has one layer and two layers has been described as an example. However, as shown in FIG. 29, three layers may be used, and four or more layers are laminated as necessary. It can also be used.

  Moreover, the transfer tape formed by the above manufacturing method can be applied to any of the first to sixth embodiments.

(Modification 3 of transfer tape manufacturing method)
30 to 32 are cross-sectional views for explaining another method for manufacturing the transfer tape shown in FIGS. 1 and 2. First, as shown in FIG. 30, a shrinkage-preventing metal layer 13 made of a metal-based material is pressure-bonded or bonded to one surface of a polyolefin tape 11 serving as a base material.

  Next, as shown in FIG. 31, a die attach film (DAF) 17 is formed on the other surface of the polyolefin tape 11 (the back surface of the surface on which the shrinkage-preventing metal layer 13 is formed).

  In this way, a transfer tape as shown in FIG. 32 in which the shrinkage-preventing metal layer 13 is formed on one surface of the polyolefin tape 11 and the DAF 17 is formed on the other surface is manufactured.

  When the anti-shrinkage metal layer 13 is formed on one surface of the polyolefin tape 11, a metal material is printed on one surface of the polyolefin tape 11 to form the anti-shrink metal layer 13 as shown in FIG. You may do it.

  Further, the transfer tape manufacturing method according to the first embodiment has been described as an example, but basically the transfer tape according to the second to sixth embodiments can be formed in the same manner.

(Modification 4 of transfer tape manufacturing method)
34 to 37 are cross-sectional views for explaining another method for manufacturing the transfer tape shown in FIGS. 1 and 2. First, as shown in FIG. 34, a metal material is pressure-bonded or bonded to one surface of the polyolefin tape 11 serving as a base material. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The metallic material is a plate, a film, a foil, or the like, and a thickness is selected from about 0.5 μm to a value corresponding to DAF 17.

  Next, as shown in FIG. 35, the metal material is selectively removed by etching to form a shrinkage-preventing metal layer 13.

  Thereafter, as shown in FIG. 36, a die attach film (DAF) 17 is formed on the other surface of the polyolefin tape 11 (the back surface of the surface on which the shrinkage-preventing metal layer 13 is formed).

  In this way, a transfer tape as shown in FIG. 37 in which the shrinkage-preventing metal layer 13 is formed on one surface of the polyolefin tape 11 and the DAF 17 is formed on the other surface is manufactured.

  Even with such a manufacturing method, a transfer tape similar to the above-described manufacturing method can be manufactured.

  Although the transfer tape manufacturing method according to the first embodiment has been described as an example here, the transfer tape according to the second to sixth embodiments can be basically formed in the same manner.

(Modification 5 of transfer tape manufacturing method)
38 to 41 are cross-sectional views for explaining still another method for manufacturing a transfer tape. First, as shown in FIG. 38, the shrinkage-preventing metal layer 13 made of a metal-based material is sandwiched between the first and second polyolefin tapes 11-1 and 11-2 serving as the base material, as shown in FIG. Crimp or glue like so.

  Next, as shown in FIG. 40, a die attach film (DAF) 17 is formed on one surface of the first and second polyolefin tapes 11-1 and 11-2 sandwiching the shrinkage-preventing metal layer 13. .

  In this way, a transfer tape as shown in FIG. 41 in which the shrinkage-preventing metal layer 13 is formed on one surface of the polyolefin tape 11 and the DAF 17 is formed on the other surface is manufactured.

  In such a manufacturing method, a transfer tape in which the shrinkage-preventing metal layer 13 is sandwiched between the first and second polyolefin tapes 11-1 and 11-2 serving as the base material can be manufactured.

  In the manufacturing method described above, the case where the polyolefin tape as the base material is one layer and two layers has been described as an example, but three layers may be used, and four or more layers may be laminated as necessary. .

  Moreover, the transfer tape formed by the above manufacturing method can be applied to any of the first to sixth embodiments.

(Modification 6 of manufacturing method of transfer tape)
42 to 44 are cross-sectional views for explaining another method for manufacturing the transfer tape shown in FIGS. 1 and 2. First, as shown in FIG. 42, a metal material is pressure-bonded or bonded to one surface of the polyolefin tape 11 serving as a base material. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The metallic material is a plate, a film, a foil, or the like, and a value corresponding to the die attach film (DAF) 17 is selected from a thickness of about 0.5 μm.

  Thereafter, as shown in FIG. 43, DAF 17 is formed on the surface of the polyolefin tape 11 on which the shrinkage-preventing metal layer 13 is formed.

  In this manner, a transfer tape as shown in FIG. 44 in which the shrinkage-preventing metal layer 13 is sandwiched between the polyolefin tape 11 and the DAF 17 is manufactured.

  Even with such a manufacturing method, a transfer tape similar to the above-described manufacturing method can be manufactured.

  Note that a transfer tape as shown in FIG. 45 may be formed by sandwiching the anti-shrinkage metal layer 13 and the adhesive layer 18 between the polyolefin tape 11 and the DAF 17. Here, the adhesive layer 12 is formed in a region other than the shrinkage-preventing metal layer.

  Although the transfer tape manufacturing method according to the first embodiment has been described as an example here, the transfer tapes according to the second to sixth embodiments can be basically formed in the same manner.

(Modification 7 of transfer tape manufacturing method)
46 to 49 are cross-sectional views for explaining still another method for manufacturing a transfer tape. First, as shown in FIG. 46, a metal material is pressure-bonded or bonded to one surface of the polyolefin tape 11 serving as a base material. As the metal-based material, metals such as aluminum and copper can be used, but various alloys can be used instead of a single element metal. The metallic material is a plate, a film, a foil, or the like, and a value corresponding to the die attach film (DAF) 17 is selected from a thickness of about 0.5 μm.

  Next, as shown in FIG. 47, the metal material is selectively removed by etching to form a shrinkage-preventing metal layer 13.

  Thereafter, as shown in FIG. 48, DAF 17 is formed on the other surface of the polyolefin tape 11 (the back surface of the surface on which the shrinkage-preventing metal layer 13 is formed).

  In this manner, a transfer tape as shown in FIG. 49 in which the shrinkage-preventing metal layer 13 is sandwiched between the polyolefin tape 11 and the DAF 17 is manufactured.

  Also in the case of this modification, similarly to FIG. 45, the transfer tape as shown in FIG. 50 is formed by sandwiching the anti-shrinkage metal layer 13 and the adhesive layer 18 between the polyolefin tape 11 and the DAF 17. You may do it.

  Moreover, the transfer tape formed by the above manufacturing method can be applied to any of the first to sixth embodiments.

[Seventh Embodiment]
Next, a method for manufacturing a semiconductor device using the transfer tape will be described with reference to the process diagram of FIG.

  First, various semiconductor elements are formed on the main surface of the semiconductor wafer by a known manufacturing process (STEP 1).

  Next, the main surface (element formation surface side) of the semiconductor wafer on which the element formation is completed is half-cut and diced, and the depth does not reach the back surface from the wafer main surface side along the dicing line or chip dividing line. The so-called half cut groove is formed (STEP 2). For example, a diamond scriber, a diamond blade, a laser scriber, or the like is used to form the half cut groove. The depth of the cut is about 10-30 μm (at least 5 μm) deeper than the final finished thickness of the chip. How much is increased depends on the accuracy of the dicer and grinder.

  Thereafter, the above-mentioned surface protection tape (BSG tape) is attached to the element forming surface of the half-cut and diced semiconductor wafer and mounted on the wafer ring (STEP 3). By using the BSG tape, it is possible to prevent the semiconductor element from being damaged by the BSG tape in the process of scraping and thinning the back surface of the wafer.

  Next, backside grinding (STEP 4) of the wafer is performed. In the back surface grinding process, the back surface of the wafer is shaved to a predetermined thickness while rotating a wheel with a grindstone at a high speed of 4000 to 7000 rpm. The grindstone is formed by hardening artificial diamond with a phenol resin. This back grinding process is often performed with two axes. There is also a method of roughing with a No. 320-600 grinding wheel in advance on one axis and then finishing with a No. 1500-2000 grinding wheel on two axes. Further, a method of grinding with three axes may be used. When the grinding reaches the groove, the semiconductor wafer is divided into individual semiconductor chips. Even after the semiconductor wafer is singulated, the back surface grinding is continued to a predetermined thickness, whereby the chipping formed at the position where the side surface and the back surface of the semiconductor chip intersect can be removed.

  Subsequently, the back surface of the semiconductor chip is mirror-finished by wet etching, plasma etching, polishing, buffing, CMP (Chemical Mechanical Polishing), or the like. As a result, the back-grinding streak can be removed, and the bending strength can be further increased.

  After completion of the back surface grinding step, a transfer tape is attached to the back surface of the semiconductor element forming surface of the semiconductor wafer, and the BSG tape is peeled off.

  Then, the semiconductor device is completed through a mounting process such as a pick-up process (STEP 5) of the semiconductor chip attached to the transfer tape, a mounting process to the lead frame or TAB tape (STEP 6), and a sealing process to the package (STEP 7). Is done.

  In the transfer tapes of the first to fourth embodiments and the sixth embodiment, if a UV curable type is used for the adhesive layer 12, the adhesive strength is reduced by performing UV irradiation before the pickup step, The semiconductor chip can be easily isolated from the transfer tape.

  According to such a method for manufacturing a semiconductor device, chipping due to chip interference can be suppressed during conveyance between the manufacturing apparatuses after back grinding. Further, since chip alignment can be ensured, it is possible to reduce recognition failure in a die bonding pickup and to cut linearly with a dicing blade.

  The various embodiments described above have been described on the assumption that the DBG technique is used, but may be used as a transfer tape in a manufacturing method in which dicing is performed after back surface grinding. In this case, warpage of the wafer due to tape shrinkage can be suppressed. Further, since the notch can be easily detected, the manufacturing process can be shortened.

  Although the present invention has been described using the first to seventh embodiments and various modifications, the present invention is not limited to the above-described embodiments, and the scope of the invention does not depart from the gist. It is possible to deform with. Each of the above embodiments includes inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some constituent elements are deleted from all the constituent elements shown in each embodiment, at least one of the problems described in the column of the problem to be solved by the invention can be solved, and is described in the column of the effect of the invention. When at least one of the effects is obtained, a configuration in which this configuration requirement is deleted can be extracted as an invention.

1 is a plan view for explaining a transfer tape according to a first embodiment of the present invention. Sectional drawing for demonstrating the transfer tape which concerns on 1st Embodiment of this invention. Sectional drawing which shows the modification 1 of the transfer tape shown in FIG.1 and FIG.2. FIG. 4 is a plan view showing a second modification of the transfer tape shown in FIGS. 1 and 2. The top view of the transfer tape which concerns on 2nd Embodiment of this invention. The top view which shows the modification of the transfer tape shown in FIG. The top view of the transfer tape which concerns on 3rd Embodiment of this invention. The top view which shows the modification of the transfer tape shown in FIG. The top view of the transfer tape which concerns on 4th Embodiment of this invention. The top view which shows the modification of the transfer tape shown in FIG. The top view of the transfer tape which concerns on 5th Embodiment of this invention. The top view which shows the modification of the transfer tape shown in FIG. The top view of the transfer tape which concerns on 6th Embodiment of this invention. The top view which shows the modification of the transfer tape shown in FIG. FIG. 14 is a plan view showing another modification of the transfer tape shown in FIG. 13. FIG. 14 is a plan view showing still another modification of the transfer tape shown in FIG. 13. Sectional drawing for demonstrating the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other example of the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 1) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 1) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 1) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 1) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 2) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 2) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 2) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 2) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the further another example of the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating another manufacturing method (modification 3) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating another manufacturing method (modification 3) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating another manufacturing method (modification 3) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating another example of the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 4) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 4) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 4) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 4) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 5) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 5) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 5) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 5) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 6) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 6) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 6) of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating another example of the manufacturing method of the transfer tape shown in FIG.1 and FIG.2. Sectional drawing for demonstrating the other manufacturing method (modification 7) of a transfer tape. Sectional drawing for demonstrating the other manufacturing method (modification 7) of a transfer tape. Sectional drawing for demonstrating the other manufacturing method (modification 7) of a transfer tape. Sectional drawing for demonstrating the other manufacturing method (modification 7) of a transfer tape. Sectional drawing for demonstrating another example of the manufacturing method of a transfer tape. Process drawing for demonstrating the manufacturing method of the semiconductor device using the transfer tape which concerns on 7th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Wafer, 11 ... Polyolefin tape, 12 ... Adhesive layer, 13, 13-1, 13-2, 13-3, 13A, 13B, 13C, 13-1D, 13-2D ... Shrinkage prevention metal layer, 14 ... Notch, 15 ... notch (mark), 16 ... mark, 17 ... die attach film (DAF), 18 ... adhesive layer.

Claims (5)

Non-metallic tape as a base material,
An adhesive layer or a die attach film formed on one surface of the non-metallic tape;
A non-shrinkable metal layer that is formed on one or the other surface of the non-metallic tape and suppresses shrinkage of the non-metallic tape; and after polishing the back surface of the wafer in DBG (Dicing Before Grinding) technology Transfer tape used for transportation . A first non-metallic tape;
A second non-metallic tape that is bonded to one surface of the first non-metallic tape and serves as a base material together with the first non-metallic tape;
An anti-shrinkage metal layer interposed between the first non-metallic tape and the second non-metallic tape to suppress shrinkage of the first and second non-metallic tapes;
An adhesive layer or a die attach film formed on one surface of the first or second non-metallic tape, and for conveyance after backside polishing of a wafer in DBG (Dicing Before Grinding) technology Transfer tape used for printing. Non-metallic tape as a base material,
A die attach film formed on one surface of the non-metallic tape;
An anti-shrinkage metal layer interposed between the non-metallic tape and the die attach film to suppress shrinkage of the non-metallic tape;
After the backside polishing of the wafer in DBG (Dicing Before Grinding) technology , comprising: an adhesive layer interposed in a region other than the shrinkage-preventing metal layer between the non-metallic tape and the die attach film Transfer tape used for transporting paper . Forming a semiconductor element in a semiconductor wafer;
Forming a groove on the element forming surface by half-cut and dicing the semiconductor wafer along a dicing line;
A step of attaching a surface protection tape to the formation surface of the semiconductor element in the semiconductor wafer;
Removing the back surface of the semiconductor element formation surface of the semiconductor wafer to a depth that reaches at least the groove, and dividing into individual semiconductor chips;
After pasting the transfer tape on the back surface of the semiconductor element formation surface in the semiconductor wafer, and removing the surface protection tape,
A step of picking up the semiconductor chip from the transfer tape,
The transfer tape is
Non-metallic tape as a base material,
An adhesive layer or a die attach film formed on one surface of the non-metallic tape and attached to the back surface of the semiconductor element forming surface of the semiconductor wafer;
A method of manufacturing a semiconductor device, comprising: a shrinkage-preventing metal layer that is formed on one or the other surface of the nonmetallic tape and suppresses shrinkage of the nonmetallic tape. Forming a semiconductor element in a semiconductor wafer;
Forming a groove on the element forming surface by half-cut and dicing the semiconductor wafer along a dicing line;
A step of attaching a surface protection tape to the formation surface of the semiconductor element in the semiconductor wafer;
Removing the back surface of the semiconductor element formation surface of the semiconductor wafer to a depth that reaches at least the groove, and dividing into individual semiconductor chips;
After pasting the transfer tape on the back surface of the semiconductor element formation surface in the semiconductor wafer, and removing the surface protection tape,
A step of picking up the semiconductor chip from the transfer tape,
The transfer tape is
A first non-metallic tape;
A second non-metallic tape formed on one surface of the first non-metallic tape and serving as a substrate together with the first non-metallic tape;
An anti-shrinkage metal layer interposed between the first non-metallic tape and the second non-metallic tape to suppress shrinkage of the first and second non-metallic tapes;
An adhesive layer or a die attach film formed on one surface of the first or second non-metallic tape and attached to the back surface of the semiconductor element forming surface of the semiconductor wafer. Device manufacturing method.

Images