JP2003206457A - Sheet for bonding wafer-dicing and method for manufacturing semiconductor device - Google Patents

Sheet for bonding wafer-dicing and method for manufacturing semiconductor device

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Publication number
JP2003206457A
JP2003206457A JP2002006432A JP2002006432A JP2003206457A JP 2003206457 A JP2003206457 A JP 2003206457A JP 2002006432 A JP2002006432 A JP 2002006432A JP 2002006432 A JP2002006432 A JP 2002006432A JP 2003206457 A JP2003206457 A JP 2003206457A
Authority
JP
Japan
Prior art keywords
adhesive
adhesive layer
layer
dicing
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002006432A
Other languages
Japanese (ja)
Other versions
JP4067308B2 (en
Inventor
Takashi Sugino
野 貴 志 杉
Osamu Yamazaki
崎 修 山
Hideo Senoo
尾 秀 男 妹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
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Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Priority to JP2002006432A priority Critical patent/JP4067308B2/en
Publication of JP2003206457A publication Critical patent/JP2003206457A/en
Application granted granted Critical
Publication of JP4067308B2 publication Critical patent/JP4067308B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a sheet for bonding a wafer dicing, capable of performing a pasting work to a semiconductor wafer and a pick up operation of an IC chip smoothly, capable of transcribing a tacky adhesive layer capable of forming a die bond layer excellent in storage elastic modulus to a rear surface of the IC chip. <P>SOLUTION: This sheet for bonding a wafer dicing is characterized by laminating a first tacky adhesive layer, a rigid layer and a second tacky adhesive layer in the above order on a base substrate. The method for producing the semiconductor is characterized by pasting the semiconductor wafer on the second tacky adhesive layer of the sheet for bonding the wafer dicing, dicing the semiconductor wafer to form the IC chips, peeling off the second tacky adhesive layer, the rigid layer and the first tacky adhesive layer from the base substrate by leaving them as fixed on the rear surface of the IC chips and then heating and thermally attaching by pressure the IC chip on the die pad part through the first tacky adhesive layer. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、新規なウエハダイ
シング・接着用シートに関する。さらに詳しくは、本発
明は、特にシリコンウエハ等をダイシングし、さらにリ
ードフレーム等の基板のダイパッド部にダイボンディン
グする工程で使用するのに特に適したウエハダイシング
・接着用シートに関する。TECHNICAL FIELD The present invention relates to a novel wafer dicing / bonding sheet. More specifically, the present invention relates to a wafer dicing / adhesion sheet particularly suitable for use in a step of dicing a silicon wafer or the like and further die bonding it to a die pad portion of a substrate such as a lead frame.

【０００２】[0002]

【従来の技術】シリコン、ガリウムヒ素などの半導体ウ
エハは大径の状態で製造され、このウエハは素子小片
（ＩＣチップ）に切断分離（ダイシング）された後に次
の工程であるマウント工程に移されている。この際、半
導体ウエハは予じめ粘着テープに貼着された状態でダイ
シング、洗浄、乾燥、エキスパンディング、ピックアッ
プの各工程が加えられた後、次工程のボンディング工程
に移送される。2. Description of the Related Art Semiconductor wafers such as silicon and gallium arsenide are manufactured in a large diameter state, and these wafers are cut and separated (dicing) into element small pieces (IC chips) and then transferred to a mounting step which is the next step. ing. At this time, the semiconductor wafer is subjected to the steps of dicing, cleaning, drying, expanding, and picking up in a state of being adhered to the adhesive tape in advance, and then transferred to the bonding step of the next step.

【０００３】これらの工程の中でピックアップ工程とボ
ンディング工程のプロセスを簡略化するために、ウエハ
固定機能とダイ接着機能とを同時に兼ね備えたウエハダ
イシング・接着用シートが種々提案されている（たとえ
ば、特開平２−３２１８１号公報）。特開平２−３２１
８１号公報には、特定の組成物よりなる粘接着剤層と、
基材とからなる粘接着テープが開示されている。この粘
接着剤層は、ウエハダイシング時には、ウエハを固定す
る機能を有し、さらに基材との間の接着力がコントロー
ルできるため、ダイシング終了後、チップのピックアッ
プを行うと、粘接着剤層は、チップとともに剥離する。
粘接着剤層を伴ったＩＣチップを基板に載置し、加熱す
ると、粘接着剤層中のエポキシ樹脂が接着力を発現し、
ＩＣチップと基板との接着が完了する。In order to simplify the processes of the pickup process and the bonding process among these processes, various wafer dicing / bonding sheets having both a wafer fixing function and a die bonding function have been proposed (for example, JP-A-2-32181). JP-A-2-321
No. 81 discloses an adhesive layer made of a specific composition,
An adhesive tape comprising a base material is disclosed. This adhesive layer has a function of fixing the wafer during wafer dicing, and since the adhesive force with the base material can be controlled, when the chips are picked up after dicing, the adhesive layer The layer peels off with the chip.
When the IC chip with the adhesive layer is placed on the substrate and heated, the epoxy resin in the adhesive layer develops adhesive force,
Bonding of the IC chip and the substrate is completed.

【０００４】上記公報に開示されている粘接着テープ
は、いわゆるダイレクトダイボンディングを可能にし、
ダイ接着用接着剤の塗布工程を省略できるようになる。
すなわち、上記の粘接着テープの粘接着剤層は、エネル
ギー線硬化および熱硬化を経たダイボンド後には全ての
成分が硬化し、チップと基板とを非常に強固に接着す
る。The adhesive tape disclosed in the above publication enables so-called direct die bonding,
It becomes possible to omit the step of applying the die-bonding adhesive.
That is, in the adhesive layer of the adhesive tape, all components are cured after the die bond that has undergone energy ray curing and heat curing, and bonds the chip and the substrate very firmly.

【０００５】ところで、近年、ＩＣのパッケージ構造は
多様化し、その構造に応じて様々な特性が要求されるよ
うになってきている。たとえば、ＩＣパッケージの信頼
性向上ができる場合があるため、ダイボンディング材の
剛直さ、すなわち高貯蔵弾性率が求められることがあ
る。しかし、前述した特開平２−３２１８１号公報に記
載の粘接着剤層では、加熱硬化後の貯蔵弾性率に限界が
あり、さらなる改善が要望される。By the way, in recent years, IC package structures have been diversified, and various characteristics have been required according to the structures. For example, since the reliability of the IC package may be improved, the rigidity of the die bonding material, that is, the high storage elastic modulus may be required. However, the pressure-sensitive adhesive layer described in JP-A-2-32181 has a limit in storage elastic modulus after heat curing, and further improvement is required.

【０００６】また、従来よりダイボンドに用いられてい
るペースト状接着剤やフィルム状接着剤は、添加されて
いるフィラーの種類や性状を選択することで高弾性率を
達成できる場合がある。しかし、前述したようにペース
ト状接着剤では、接着剤のブリードアウトやはみ出し、
チップの傾きなどの問題がある。またフィラーを添加し
高弾性化したフィルム状接着剤では、粘着性が低下し、
加熱条件を上げて貼付性を維持させなければならず、製
造工程が複雑化し、生産効率に劣ることになる可能性が
ある。Further, the pasty adhesive or film adhesive conventionally used for die-bonding may be able to achieve a high elastic modulus by selecting the type and properties of the filler added. However, as mentioned above, with the paste adhesive, the adhesive bleeds out or sticks out,
There are problems such as tip tilt. In addition, with a film adhesive that is made highly elastic by adding a filler, the tackiness decreases,
It is necessary to increase the heating condition to maintain the sticking property, which complicates the manufacturing process and may result in poor production efficiency.

【０００７】一方、特許第２６６５３８３号には、「支
持基材上に粘着層、熱可塑性接着フィルムおよびウエハ
固定用接着層を順次積層してなり、前記粘着層と熱可塑
性接着フィルムが剥離可能状態にて積層されていること
を特徴とするダイシング・ダイボンドフィルム」が開示
されている。このダイシング・ダイボンドフィルムの構
造では、ウエハ固定用接着層または熱可塑性接着フィル
ムのどちらかを高弾性率化しようとしても、ウエハ側あ
るいは基板側への貼付性が劣ることになるため、充分な
ＩＣパッケージの信頼性を得られない。On the other hand, Japanese Patent No. 2665383 describes that "an adhesive layer, a thermoplastic adhesive film, and a wafer fixing adhesive layer are sequentially laminated on a supporting substrate, and the adhesive layer and the thermoplastic adhesive film are in a peelable state. And a dicing die-bonding film "are disclosed. In the structure of this dicing die-bonding film, even if one tries to increase the elastic modulus of either the adhesive layer for fixing the wafer or the thermoplastic adhesive film, the adhesiveness to the wafer side or the substrate side will be poor, so a sufficient IC I cannot get the reliability of the package.

【０００８】また、粘着層と熱可塑性接着フィルムとが
直接積層されているため、層同士で成分の移動が起こ
り、経時的に特性が変化することがある。このため、ダ
イシングの後、粘着層の粘着力が充分に低下しないこと
があり、ピックアップ不良を起こすおそれがある。粘着
層と熱可塑性接着フィルムのみでは充分な貯蔵弾性率を
得ることもできない。Further, since the adhesive layer and the thermoplastic adhesive film are directly laminated, the components may move between the layers and the characteristics may change with time. For this reason, the adhesive force of the adhesive layer may not be sufficiently reduced after dicing, which may cause pickup failure. It is not possible to obtain a sufficient storage elastic modulus only with the adhesive layer and the thermoplastic adhesive film.

【０００９】[0009]

【発明が解決しようとする課題】本発明は、上記のよう
な従来技術に鑑みてなされたものであって、半導体ウエ
ハへの貼付作業およびＩＣチップのピックアップ操作を
円滑に行え、かつ貯蔵弾性率に優れ、ＩＣパッケージの
信頼性を高くできるウエハダイシング・接着用シートを
提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, in which the sticking operation to a semiconductor wafer and the IC chip pickup operation can be performed smoothly, and the storage elastic modulus can be improved. It is an object of the present invention to provide a wafer dicing / bonding sheet which is excellent in reliability and can enhance the reliability of an IC package.

【００１０】[0010]

【課題を解決するための手段】本発明に係るウエハダイ
シング・接着用シートは、基材上に、第１の粘接着剤
層、剛直層および第２の粘接着剤層がこの順に積層して
なることを特徴としている。本発明において、前記基材
の前記第１の粘接着剤層に接する面の表面張力が４０dy
n/cm以下であることが好ましい。In a wafer dicing / adhesive sheet according to the present invention, a first adhesive / adhesive layer, a rigid layer and a second adhesive / adhesive layer are laminated in this order on a substrate. It is characterized by doing. In the present invention, the surface tension of the surface of the base material in contact with the first adhesive layer is 40 dy.
It is preferably n / cm or less.

【００１１】本発明においては、前記剛直層が、硬化性
樹脂からなり、該樹脂の硬化後の−５０〜１５０℃での
貯蔵弾性率が10 8Ｐａ以上であるか、エンジニアリング
プラスチックからなるか、または金属箔からなることが
好ましい。In the present invention, the rigid layer is curable.
Made of resin, and at -50 to 150 ° C after curing of the resin
Storage modulus of 10 8Is Pa or higher or engineering
Can be made of plastic or metal foil
preferable.

【００１２】本発明に係る半導体装置の製造方法は、基
材上に、第１の粘接着剤層、剛直層および第２の粘接着
剤層がこの順に積層してなるウエハダイシング・接着用
シートの第２の粘接着剤層に、半導体ウエハを貼着し、
前記半導体ウエハをダイシングしてＩＣチップとし、前
記ＩＣチップ裏面に第２の粘接着剤層、剛直層、第１の
粘接着剤層を固着残存させて基材から剥離し、前記ＩＣ
チップをダイパッド部上に前記第１の粘接着剤層を介し
て熱圧着することを特徴としている。The method of manufacturing a semiconductor device according to the present invention is a wafer dicing / bonding method in which a first adhesive layer, a rigid layer and a second adhesive layer are laminated in this order on a substrate. A semiconductor wafer on the second adhesive layer of the sheet for
The semiconductor wafer is diced into IC chips, and the second adhesive / adhesive layer, the rigid layer, and the first adhesive / adhesive layer are fixedly left on the back surface of the IC chip and peeled off from the base material.
It is characterized in that the chip is thermocompression bonded onto the die pad portion via the first adhesive layer.

【００１３】このような本発明によれば、半導体ウエハ
への貼付作業およびＩＣチップのピックアップ操作を円
滑に行え、かつ貯蔵弾性率に優れたダイボンド層を形成
できる粘接着剤層をＩＣチップ裏面に転写できるウエハ
ダイシング・接着用シートが提供される。According to the present invention as described above, a tacky adhesive layer capable of smoothly adhering to a semiconductor wafer and picking up an IC chip and forming a die bond layer having an excellent storage elastic modulus is provided on the back surface of the IC chip. Provided is a wafer dicing / adhesion sheet that can be transferred to a wafer.

【００１４】[0014]

【発明の実施の形態】以下、本発明に係るウエハダイシ
ング・接着用シートおよび半導体装置の製造方法につい
て、具体的に説明する。本発明に係るウエハダイシング
・接着用シート１０は、図１に示すように、基材１上
に、第１の粘接着剤層２、剛直層３および第２の粘接着
剤層４がこの順に積層してなる。BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a wafer dicing / bonding sheet and a semiconductor device according to the present invention will be specifically described below. As shown in FIG. 1, a wafer dicing / adhesion sheet 10 according to the present invention has a first adhesive layer 2, a rigid layer 3, and a second adhesive layer 4 on a substrate 1. It is laminated in this order.

【００１５】本発明に係るウエハダイシング・接着用シ
ート１０の形状は、テープ状、ラベル状などあらゆる形
状をとりうる。基材１ ウエハダイシング・接着用シート１０の基材１として
は、たとえば、ポリエチレンフィルム、ポリプロピレン
フィルム、ポリブテンフィルム、ポリブタジエンフィル
ム、ポリメチルペンテンフィルム、ポリ塩化ビニルフィ
ルム、塩化ビニル共重合体フィルム、ポリエチレンテレ
フタレートフィルム、ポリエチレンナフタレートフィル
ム、ポリブチレンテレフタレートフィルム、ポリウレタ
ンフィルム、エチレン酢ビフィルム、アイオノマー樹脂
フィルム、エチレン・（メタ）アクリル酸共重合体フィ
ルム、エチレン・（メタ）アクリル酸エステル共重合体
フィルム、ポリスチレンフィルム、ポリカーボネートフ
ィルム、ポリイミドフィルム等の透明フィルムが用いら
れる。またこれらの架橋フィルムも用いられる。さらに
これらの積層フィルムであってもよい。また、上記の透
明フィルムの他、これらを着色した不透明フィルム、フ
ッ素樹脂フィルム等を用いることができる。The shape of the wafer dicing / adhesion sheet 10 according to the present invention can be any shape such as a tape shape or a label shape. Substrate 1 The substrate 1 of the wafer dicing / adhesion sheet 10 includes, for example, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate. Film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film A transparent film such as a polycarbonate film or a polyimide film is used. Further, these crosslinked films are also used. Further, a laminated film of these may be used. In addition to the above-mentioned transparent films, colored opaque films, fluororesin films and the like can be used.

【００１６】本発明に係るウエハダイシング・接着用シ
ート１０を半導体装置の製造工程に使用する場合、ＩＣ
チップ裏面に第２の粘接着剤層４、剛直層３、第１の粘
接着剤層２を固着残存させて基材１から剥離する。この
ため、基材１の第１の粘接着剤層２に接する面の表面張
力は、好ましくは４０dyn/cm 以下、さらに好ましくは
３７dyn/cm 以下、特に好ましくは３５dyn/cm 以下であ
ることが望ましい。このような表面張力が低い基材は、
材質を適宜に選択して得ることが可能であるし、また基
材に表面に離型剤を塗布して離型処理を施すことで得る
こともできる。When the wafer dicing / adhesion sheet 10 according to the present invention is used in a semiconductor device manufacturing process, an IC is used.
The second tacky-adhesive layer 4, the rigid layer 3, and the first tacky-adhesive layer 2 are fixedly left on the back surface of the chip and peeled off from the substrate 1. Therefore, the surface tension of the surface of the base material 1 in contact with the first tacky-adhesive layer 2 is preferably 40 dyn / cm or less, more preferably 37 dyn / cm or less, and particularly preferably 35 dyn / cm or less. desirable. Substrates with low surface tension are
It can be obtained by appropriately selecting the material, or can be obtained by applying a release agent to the surface of the base material and subjecting it to a release treatment.

【００１７】基材１の離型処理に用いられる離型剤とし
ては、アルキッド系、シリコーン系、フッ素系、不飽和
ポリエステル系、ポリオレフィン系、ワックス系等が用
いられるが、特にアルキッド系、シリコーン系、フッ素
系の離型剤が耐熱性を有するので好ましい。特に基材フ
ィルムへの密着性が高く、表面張力が調整しやすいた
め、アルキッド樹脂が好ましい。As the release agent used for the release treatment of the substrate 1, alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, wax-based and the like are used, but alkyd-based and silicone-based are particularly preferable. A fluorine-based releasing agent is preferable because it has heat resistance. Alkyd resin is particularly preferable because it has high adhesion to the substrate film and the surface tension is easily adjusted.

【００１８】上記の離型剤を用いて基材１の表面を離型
処理するためには、離型剤をそのまま無溶剤で、または
溶剤希釈やエマルション化して、グラビアコーター、メ
イヤーバーコーター、エアナイフコーター、ロールコー
ター等により塗布して、常温または加熱あるいは電子線
硬化させたり、ウェットラミネーションやドライラミネ
ーション、熱溶融ラミネーション、溶融押出ラミネーシ
ョン、共押出加工などで積層体を形成すればよい。In order to mold-release the surface of the substrate 1 using the above-mentioned mold release agent, the mold release agent may be used as it is without a solvent, or may be diluted with a solvent or emulsified to obtain a gravure coater, a Meyer bar coater, an air knife. It may be applied by a coater, a roll coater or the like, and cured at room temperature or by heating or electron beam, or by wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing or the like to form a laminate.

【００１９】このような基材の膜厚は、通常は１０〜５
００μｍ、好ましくは１５〜３００μｍ、特に好ましく
は２０〜２５０μｍ程度である。第１の粘接着剤層２ 第１の粘接着剤層２は、後述する半導体装置の製造方法
において、ピックアップされたチップの最下面に配置さ
れ、ダイパッド部との固着に用いられる。The film thickness of such a substrate is usually 10-5.
The thickness is 00 μm, preferably 15 to 300 μm, and particularly preferably 20 to 250 μm. First Adhesive / Adhesive Layer 2 The first adhesive / adhesive layer 2 is arranged on the lowermost surface of the picked-up chip and used for fixing to the die pad portion in the method for manufacturing a semiconductor device described later.

【００２０】したがって、従来よりこの種の用途に用い
られてきた粘接着剤が特に制限されることなく用いられ
る。しかしながら、基材１表面からの剥離を容易にする
ために、第１の粘接着剤層は、エネルギー線硬化性成分
を有することが好ましい。エネルギー線硬化性成分を硬
化させることで、粘着力が減少するため、基材１表面か
らの剥離を容易に行えるようになる。また、ダイパッド
部との固着を強固にするために、熱硬化性成分を有する
ことが好ましい。ダイパッド部への載置後、加熱するこ
とで熱硬化性成分が活性化し、ダイパッド部に対し強固
に接着できるようになる。Therefore, the tacky-adhesive agent which has been conventionally used for this type of application can be used without particular limitation. However, in order to facilitate peeling from the surface of the base material 1, the first adhesive layer preferably has an energy ray-curable component. By curing the energy ray-curable component, the adhesive force is reduced, so that the substrate can be easily peeled from the surface of the substrate 1. Further, it is preferable to have a thermosetting component in order to firmly fix the die pad portion. By heating after being placed on the die pad portion, the thermosetting component is activated, and it becomes possible to firmly adhere to the die pad portion.

【００２１】すなわち第１の粘接着剤層２は、エネルギ
ー線硬化性と加熱硬化性とを有し、マウントの際には接
着剤として使用することができる性質を有することが好
ましい。このような粘接着剤の具体例としては、たとえ
ば（Ａ）粘着成分と、（Ｂ）エネルギー線硬化性成分
と、（Ｃ）熱硬化型接着成分とからなる粘接着剤をあげ
ることができる。That is, it is preferable that the first adhesive / adhesive layer 2 has energy ray curability and heat curability, and has a property that it can be used as an adhesive during mounting. Specific examples of such an adhesive / adhesive include an adhesive / adhesive comprising (A) adhesive component, (B) energy ray-curable component, and (C) thermosetting adhesive component. it can.

【００２２】粘着成分（Ａ）としては、アクリル系、ゴ
ム系、ポリエステル系、シリコーン系等の汎用の粘着剤
が用いられ、特にアクリル系粘着剤が好ましく用いられ
る。アクリル系粘着剤としては、たとえば、（メタ）ア
クリル酸エステルモノマーおよび（メタ）アクリル酸誘
導体から導かれる構成単位とからなる（メタ）アクリル
酸エステル共重合体が挙げられる。ここで（メタ）アク
リル酸エステルモノマーとしては、（メタ）アクリル酸
シクロアルキルエステル、（メタ）アクリル酸ベンジル
エステル、アルキル基の炭素数が１〜１８である（メ
タ）アクリル酸アルキルエステルが用いられる。これら
の中でも、特に好ましくはアルキル基の炭素数が１〜１
８である（メタ）アクリル酸アルキルエステル、たとえ
ばアクリル酸メチル、メタクリル酸メチル、アクリル酸
エチル、メタクリル酸エチル、アクリル酸プロピル、メ
タクリル酸プロピル、アクリル酸ブチル、メタクリル酸
ブチル等が用いられる。また、（メタ）アクリル酸誘導
体としては、たとえば（メタ）アクリル酸グリシジル等
を挙げることができる。As the pressure-sensitive adhesive component (A), a general-purpose pressure-sensitive adhesive such as an acrylic-based, rubber-based, polyester-based or silicone-based adhesive is used, and an acrylic-based adhesive is particularly preferably used. Examples of the acrylic pressure-sensitive adhesive include a (meth) acrylic acid ester copolymer composed of a structural unit derived from a (meth) acrylic acid ester monomer and a (meth) acrylic acid derivative. Here, as the (meth) acrylic acid ester monomer, a (meth) acrylic acid cycloalkyl ester, a (meth) acrylic acid benzyl ester, or a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 18 carbon atoms is used. . Among these, it is particularly preferable that the alkyl group has 1 to 1 carbon atoms.
(Meth) acrylic acid alkyl ester of 8 such as methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate and the like are used. Examples of the (meth) acrylic acid derivative include glycidyl (meth) acrylate.

【００２３】上記のようなアクリル系粘着剤としては、
特に、（メタ）アクリル酸または（メタ）アクリル酸グ
リシジルと、少なくとも１種類の（メタ）アクリル酸ア
ルキルエステルとの共重合体が好ましい。この場合、共
重合体中における（メタ）アクリル酸グリシジルから誘
導される成分単位の含有率は通常は０〜８０モル％、好
ましくは５〜５０モル％である。グリシジル基を導入す
ることにより、後述する熱硬化型接着成分としてのエポ
キシ樹脂との相溶性が向上し、また硬化後のＴｇが高く
なり耐熱性も向上する。（メタ）アクリル酸から誘導さ
れる成分単位の含有率は通常は０〜４０モル％、好まし
くは５〜２０モル％である。また（メタ）アクリル酸ア
ルキルエステルとしては、（メタ）アクリル酸メチル、
（メタ）アクリル酸エチル、（メタ）アクリル酸ブチル
等を用いることが好ましい。また、アクリル酸ヒドロキ
シエチル等の水酸基含有モノマーを導入することによ
り、被着体との密着性や粘着物性のコントロールが容易
になる。As the acrylic adhesive as described above,
Particularly, a copolymer of (meth) acrylic acid or glycidyl (meth) acrylate and at least one kind of (meth) acrylic acid alkyl ester is preferable. In this case, the content of the component unit derived from glycidyl (meth) acrylate in the copolymer is usually 0 to 80 mol%, preferably 5 to 50 mol%. By introducing the glycidyl group, compatibility with an epoxy resin as a thermosetting adhesive component described later is improved, and Tg after curing is increased, and heat resistance is also improved. The content of the component unit derived from (meth) acrylic acid is usually 0 to 40 mol%, preferably 5 to 20 mol%. Further, as the (meth) acrylic acid alkyl ester, methyl (meth) acrylate,
It is preferable to use ethyl (meth) acrylate, butyl (meth) acrylate or the like. Further, by introducing a hydroxyl group-containing monomer such as hydroxyethyl acrylate, it becomes easy to control the adhesiveness to the adherend and the adhesive property.

【００２４】アクリル系粘着剤の分子量は、好ましくは
１０００００以上であり、特に好ましくは１５００００
〜１００００００である。またアクリル系粘着剤のガラ
ス転移温度は、通常２０℃以下、好ましくは−７０〜０
℃程度であり、常温（２３℃）においては粘着性を有す
る。エネルギー線硬化性成分（Ｂ）は、紫外線、電子線
等のエネルギー線の照射を受けると重合硬化する化合物
である。このエネルギー線重合性化合物の例としては、
たとえば特開昭６０−１９６，９５６号公報および特開
昭６０−２２３，１３９号公報に開示されているような
低分子量化合物があげられ、具体的には、トリメチロー
ルプロパントリアクリレート、テトラメチロールメタン
テトラアクリレート、ペンタエリスリトールトリアクリ
レート、ジペンタエリスリトールモノヒドロキシペンタ
アクリレート、ジペンタエリスリトールヘキサアクリレ
ートあるいは１，４−ブチレングリコールジアクリレー
ト、１，６−ヘキサンジオールジアクリレート、ポリエ
チレングリコールジアクリレート、オリゴエステルアク
リレート、ウレタンアクリレート系オリゴマーなどのア
クリレート系化合物が用いられる。このような化合物
は、分子内に少なくとも１つの重合性二重結合を有し、
通常は、分子量が１００〜３００００、好ましくは３０
０〜１００００程度である。The molecular weight of the acrylic pressure-sensitive adhesive is preferably 100,000 or more, particularly preferably 150,000.
Is 1,000,000. The glass transition temperature of the acrylic pressure-sensitive adhesive is usually 20 ° C. or lower, preferably −70 to 0.
It is about 0 ° C, and has adhesiveness at room temperature (23 ° C). The energy ray-curable component (B) is a compound that polymerizes and cures when irradiated with energy rays such as ultraviolet rays and electron rays. Examples of this energy ray-polymerizable compound include:
Examples thereof include low molecular weight compounds as disclosed in JP-A-60-196,956 and JP-A-60-223,139. Specific examples include trimethylolpropane triacrylate and tetramethylolmethane. Tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane An acrylate compound such as an acrylate oligomer is used. Such compounds have at least one polymerizable double bond in the molecule,
Usually, the molecular weight is 100 to 30,000, preferably 30.
It is about 0 to 10000.

【００２５】さらにエネルギー線重合性化合物の他の例
として、分子内にジシクロペンタジエン骨格と、エネル
ギー線重合性基を少なくとも１つ、好ましくは２〜１０
個有するジシクロペンタジエン骨格含有エネルギー線重
合性化合物があげられる。このジシクロペンタジエン骨
格含有エネルギー線重合性化合物の分子量は、好ましく
は１５０〜８４０、さらに好ましくは２５０〜５００程
度である。Further, as another example of the energy ray-polymerizable compound, at least one dicyclopentadiene skeleton and at least one energy ray-polymerizable group in the molecule, preferably 2-10.
Examples thereof include an energy ray-polymerizable compound having a dicyclopentadiene skeleton. The molecular weight of this dicyclopentadiene skeleton-containing energy ray-polymerizable compound is preferably about 150 to 840, more preferably about 250 to 500.

【００２６】ジシクロペンタジエン骨格含有エネルギー
線重合性化合物としては、具体的には、Ｒ−６８４（商
品名：日本化薬（株）社製）等があげられる。また、こ
れらの他にも、エポキシ変性アクリレート、ポリエステ
ルアクリレート、ポリエーテルアクリレートおよびイタ
コン酸オリゴマーのように水酸基あるいはカルボキシル
基などの官能基を有するオリゴマーを用いることもでき
る。Specific examples of the dicyclopentadiene skeleton-containing energy ray-polymerizable compound include R-684 (trade name: manufactured by Nippon Kayaku Co., Ltd.). In addition to these, it is also possible to use oligomers having a functional group such as a hydroxyl group or a carboxyl group such as epoxy modified acrylate, polyester acrylate, polyether acrylate and itaconic acid oligomer.

【００２７】一般的には成分（Ａ）１００重量部に対し
て、成分（Ｂ）は５０〜１５０重量部、好ましくは８０
〜１２５重量部程度の割合で用いられる。上記のような
成分（Ａ） および（Ｂ）からなる粘接着剤組成物は、
エネルギー線照射により硬化する。エネルギー線として
は、具体的には、紫外線、電子線等が用いられる。また
上記成分（Ａ）および（Ｂ）の性質を兼ね備えるものと
して、側鎖にエネルギー線重合性基を有するエネルギー
線硬化型共重合体（以下、成分（ＡＢ）と記載する場合
がある）を用いてもよい。このようなエネルギー線硬化
型共重合体は、粘着性とエネルギー線硬化性とを兼ね備
える性質を有する。側鎖にエネルギー線重合性基を有す
るエネルギー線硬化型共重合体は、たとえば、特開平５
−３２９４６号公報、特開平８−２７２３９号公報等に
その詳細が記載されている。Generally, the component (B) is 50 to 150 parts by weight, preferably 80, relative to 100 parts by weight of the component (A).
It is used in a proportion of about 125 parts by weight. An adhesive composition comprising the components (A) and (B) as described above is
It is cured by irradiation with energy rays. As the energy rays, specifically, ultraviolet rays, electron beams and the like are used. In addition, an energy ray-curable copolymer having an energy ray-polymerizable group in its side chain (hereinafter sometimes referred to as ingredient (AB)) is used as a material having the properties of the above components (A) and (B). May be. Such an energy ray-curable copolymer has the property of having both tackiness and energy ray-curability. An energy ray-curable copolymer having an energy ray-polymerizable group in its side chain is disclosed in, for example, Japanese Patent Laid-Open No.
The details are described in JP-A-32946 and JP-A-8-27239.

【００２８】エネルギー線として紫外線を用いる場合に
は、光重合開始剤を混入することにより、重合硬化時間
ならびに光線照射量を少なくすることができる。このよ
うな光重合開始剤としては、具体的には、ベンゾフェノ
ン、アセトフェノン、ベンゾイン、ベンゾインメチルエ
ーテル、ベンゾインエチルエーテル、ベンゾインイソプ
ロピルエーテル、ベンゾインイソブチルエーテル、ベン
ゾイン安息香酸、ベンゾイン安息香酸メチル、ベンゾイ
ンジメチルケタール、2,4-ジエチルチオキサンソン、α
-ヒドロキシシクロヘキシルフェニルケトン、ベンジル
ジフェニルサルファイド、テトラメチルチウラムモノサ
ルファイド、アゾビスイソブチロニトリル、ベンジル、
ジベンジル、ジアセチル、β−クロールアンスラキノン
あるいは2,4,6-トリメチルベンゾイルジフェニルフォス
フィンオキサイドなどが挙げられる。When ultraviolet rays are used as the energy rays, by mixing a photopolymerization initiator, the polymerization and curing time and the light irradiation amount can be shortened. As such a photopolymerization initiator, specifically, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, α
-Hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, benzyl,
Examples thereof include dibenzyl, diacetyl, β-chloranthraquinone, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

【００２９】光重合開始剤は、前記成分（Ａ）＋（Ｂ）
の合計または成分（ＡＢ）１００重量部に対して、１．
５〜４．５重量部、好ましくは２．４〜３．８重量部程
度の割合で用いることが好ましい。上記成分（Ａ＋Ｂま
たはＡＢ）は、次に挙げる熱硬化型接着成分（Ｃ）１０
０重量部に対して、通常１５〜１００重量部、好ましく
は１８〜７０重量部、特に好ましくは２０〜５０重量部
の量で用いられる。The photopolymerization initiator is the above-mentioned components (A) + (B).
Or 100 parts by weight of the component (AB).
It is preferable to use 5 to 4.5 parts by weight, preferably 2.4 to 3.8 parts by weight. The above component (A + B or AB) is the thermosetting adhesive component (C) 10 described below.
It is usually used in an amount of 15 to 100 parts by weight, preferably 18 to 70 parts by weight, and particularly preferably 20 to 50 parts by weight, based on 0 parts by weight.

【００３０】熱硬化型接着成分（Ｃ）は、エネルギー線
によっては硬化しないが、加熱を受けると三次元網状化
し、被着体を強固に接着する性質を有する。このような
熱硬化型接着成分（Ｃ）は、一般的にはエポキシ、フェ
ノキシ、フェノール、レゾルシノール、ユリア、メラミ
ン、フラン、不飽和ポリエステル、シリコーン等の熱硬
化性樹脂と、適当な硬化促進剤とから形成されている。
このような熱硬化型接着成分は種々知られており、本発
明においては特に制限されることなく従来より公知の様
々な熱硬化型接着成分を用いることができる。このよう
な熱硬化型接着成分の一例としては、(C-1)エポキシ樹
脂と(C-2)熱活性型潜在性エポキシ樹脂硬化剤とからな
る接着成分を挙げることができる。The thermosetting adhesive component (C) is not cured by energy rays, but has a property of forming a three-dimensional network when heated and firmly adhering an adherend. Such a thermosetting adhesive component (C) generally comprises a thermosetting resin such as epoxy, phenoxy, phenol, resorcinol, urea, melamine, furan, unsaturated polyester and silicone, and an appropriate curing accelerator. Are formed from.
A variety of such thermosetting adhesive components are known, and various conventionally known thermosetting adhesive components can be used in the present invention without any particular limitation. An example of such a thermosetting adhesive component is an adhesive component composed of (C-1) epoxy resin and (C-2) heat-activable latent epoxy resin curing agent.

【００３１】エポキシ樹脂(C-1)としては、従来より公
知の種々のエポキシ樹脂が用いられるが、通常は、分子
量３００〜２０００程度のものが好ましく、特に分子量
３００〜５００、好ましくは３３０〜４００の常態液状
のエポキシ樹脂と、分子量４００〜２０００、好ましく
は５００〜１５００の常態固体のエポキシ樹脂とをブレ
ンドした形で用いるのが望ましい。また、本発明におい
て好ましく使用されるエポキシ樹脂のエポキシ当量は通
常５０〜５０００g/eqである。このようなエポキシ樹脂
としては、具体的には、ビスフェノールＡ、ビスフェノ
ールＦ、レゾルシノール、フェニルノボラック、クレゾ
ールノボラックなどのフェノール類のグリシジルエーテ
ル；ブタンジオール、ポリエチレングリコール、ポリプ
ロピレングリコールなどのアルコール類のグリシジルエ
ーテル；フタル酸、イソフタル酸、テトラヒドロフタル
酸などのカルボン酸のグリシジルエーテル；アニリンイ
ソシアヌレートなどの窒素原子に結合した活性水素をグ
リシジル基で置換したグリシジル型もしくはアルキルグ
リシジル型のエポキシ樹脂；ビニルシクロヘキサンジエ
ポキシド、3,4-エポキシシクロヘキシルメチル-3,4-ジ
シクロヘキサンカルボキシレート、2-(3,4-エポキシ)シ
クロヘキシル-5,5-スピロ(3,4-エポキシ)シクロヘキサ
ン-m-ジオキサンなどのように、分子内の炭素−炭素二
重結合をたとえば酸化することによりエポキシが導入さ
れた、いわゆる脂環型エポキシドを挙げることができ
る。As the epoxy resin (C-1), various conventionally known epoxy resins are used, but those having a molecular weight of about 300 to 2000 are usually preferable, and particularly, a molecular weight of 300 to 500, preferably 330 to 400. It is desirable to use the normal state liquid epoxy resin and the normal state solid epoxy resin having a molecular weight of 400 to 2000, preferably 500 to 1500 in a blended form. The epoxy equivalent of the epoxy resin preferably used in the present invention is usually 50 to 5000 g / eq. Specific examples of such epoxy resin include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, polypropylene glycol; Glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; glycidyl-type or alkylglycidyl-type epoxy resins in which active hydrogen bonded to the nitrogen atom such as aniline isocyanurate is substituted with a glycidyl group; vinylcyclohexane diepoxide, 3,4-Epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-epoxy) cyclohexane-m-di Examples thereof include so-called alicyclic epoxides such as oxane in which epoxy is introduced by, for example, oxidizing a carbon-carbon double bond in the molecule.

【００３２】これらの中でも、本発明では、ビスフェノ
ール系グリシジル型エポキシ樹脂、o-クレゾールノボラ
ック型エポキシ樹脂およびフェノールノボラック型エポ
キシ樹脂が好ましく用いられる。またさらに、分子内に
ジシクロペンタジエン骨格と、反応性のエポキシ基を有
するジシクロペンタジエン骨格含有エポキシ樹脂を用い
てもよい。このようなジシクロペンタジエン骨格含有エ
ポキシ樹脂は、通常は、常態で固形であり、その軟化点
は、好ましくは４０〜９０℃、さらに好ましくは４５〜
８０℃、特に好ましくは５０〜７０℃程度である。また
ジシクロペンタジエン骨格含有エポキシ樹脂の分子量
は、好ましくは４３０〜３０００、さらに好ましくは７
００〜２５００、特に好ましくは１０００〜２０００で
ある。さらに、該ジシクロペンタジエン骨格含有エポキ
シ樹脂のエポキシ当量は、好ましくは１９０〜１０００
g/eq、さらに好ましくは２００〜８００g/eq、特に好ま
しくは２１０〜４００g/eqである。Among these, bisphenol glycidyl type epoxy resin, o-cresol novolac type epoxy resin and phenol novolac type epoxy resin are preferably used in the present invention. Furthermore, a dicyclopentadiene skeleton-containing epoxy resin having a dicyclopentadiene skeleton and a reactive epoxy group in the molecule may be used. Such a dicyclopentadiene skeleton-containing epoxy resin is usually solid in a normal state, and its softening point is preferably 40 to 90 ° C., more preferably 45 to 90 ° C.
The temperature is 80 ° C, particularly preferably about 50 to 70 ° C. The molecular weight of the dicyclopentadiene skeleton-containing epoxy resin is preferably 430 to 3000, more preferably 7
It is from 00 to 2500, particularly preferably from 1000 to 2000. Furthermore, the epoxy equivalent of the dicyclopentadiene skeleton-containing epoxy resin is preferably 190 to 1000.
g / eq, more preferably 200 to 800 g / eq, particularly preferably 210 to 400 g / eq.

【００３３】ジシクロペンタジエン骨格含有エポキシ樹
脂としては、具体的にはXD-1000-L（商品名：日本化薬
（株）製）、EXA-7200HH（商品名：大日本インキ化学工
業（株）製）等があげられる。このようなジシクロペン
タジエン骨格含有エポキシ樹脂の硬化物は、吸水率が低
くいためリフロー時のパッケージクラックを防止でき
る。これらエポキシ樹脂は、１種単独で、または２種以
上を組み合わせて用いることができる。Specific examples of the dicyclopentadiene skeleton-containing epoxy resin include XD-1000-L (trade name: manufactured by Nippon Kayaku Co., Ltd.) and EXA-7200HH (trade name: Dainippon Ink and Chemicals Co., Ltd.). Manufactured) and the like. A cured product of such an epoxy resin containing a dicyclopentadiene skeleton has a low water absorption rate, so that package cracks during reflow can be prevented. These epoxy resins can be used alone or in combination of two or more.

【００３４】熱活性型潜在性エポキシ樹脂硬化剤(C-2)
とは、室温ではエポキシ樹脂と反応せず、ある温度以上
の加熱により活性化し、エポキシ樹脂と反応するタイプ
の硬化剤である。熱活性型潜在性エポキシ樹脂硬化剤(C
-2)の活性化方法には、加熱による化学反応で活性種
（アニオン、カチオン）を生成する方法；室温付近では
エポキシ樹脂(C-1)中に安定に分散しており高温でエポ
キシ樹脂と相溶・溶解し、硬化反応を開始する方法；モ
レキュラーシーブ封入タイプの硬化剤で高温で溶出して
硬化反応を開始する方法；マイクロカプセルによる方法
等が存在する。Thermally active latent epoxy resin curing agent (C-2)
Is a curing agent of the type that does not react with the epoxy resin at room temperature, but is activated by heating above a certain temperature and reacts with the epoxy resin. Thermally active latent epoxy resin curing agent (C
-2) activation method is a method of generating active species (anion, cation) by a chemical reaction by heating; stable dispersion in epoxy resin (C-1) at room temperature and epoxy resin at high temperature There are methods of compatibilizing / dissolving and initiating the curing reaction; methods of initiating the curing reaction by elution at a high temperature with a molecular sieve-encapsulating type curing agent; methods using microcapsules, and the like.

【００３５】これら熱活性型潜在性エポキシ樹脂硬化剤
は、１種単独で、または２種以上を組み合わせて用いる
ことができる。特に上記の中でも、ジシアンジアミド、
イミダゾール化合物あるいはこれらの混合物が好まし
い。上記のような熱活性型潜在性エポキシ樹脂硬化剤(C
-2)は、エポキシ樹脂(C-1)１００重量部に対して通常
０．１〜２０重量部、好ましくは０．５〜１５重量部、
特に好ましくは１〜１０重量部の割合で用いられる。These heat-activatable latent epoxy resin curing agents can be used alone or in combination of two or more. Especially among the above, dicyandiamide,
Imidazole compounds or mixtures thereof are preferred. Thermally active latent epoxy resin curing agent (C
-2) is usually 0.1 to 20 parts by weight, preferably 0.5 to 15 parts by weight, based on 100 parts by weight of the epoxy resin (C-1),
It is particularly preferably used in a proportion of 1 to 10 parts by weight.

【００３６】第１の粘接着剤層２には、さらにカップリ
ング剤（Ｄ）を配合しても良い。カップリング剤（Ｄ）
は、上記（Ａ）〜（Ｃ）成分、好ましくは成分（Ｃ）が
有する官能基と反応する基を有することが望ましい。カ
ップリング剤（Ｄ）は硬化反応時に、カップリング剤中
の有機官能基が熱硬化型接着成分（Ｃ）（特に好ましく
はエポキシ樹脂）と反応すると考えられ、硬化物の耐熱
性を損なわずに、接着性、密着性を向上させることがで
き、さらに耐水性（耐湿熱性）も向上する。The first adhesive / adhesive layer 2 may further contain a coupling agent (D). Coupling agent (D)
Preferably has a group that reacts with the functional group contained in the components (A) to (C), preferably the component (C). It is considered that the organic functional group in the coupling agent reacts with the thermosetting adhesive component (C) (particularly preferably epoxy resin) during the curing reaction of the coupling agent (D), so that the heat resistance of the cured product is not impaired. The adhesiveness and adhesion can be improved, and the water resistance (moisture and heat resistance) is also improved.

【００３７】カップリング剤（Ｄ）としては、その汎用
性とコストメリットなどからシラン系（シランカップリ
ング剤）が好ましい。また、上記のようなカップリング
剤（Ｄ）は、前記熱硬化型接着成分（Ｃ）１００重量部
に対して通常０．１〜２０重量部、好ましくは０．５〜
１５重量部、特に好ましくは１〜１０重量部の割合で用
いられる。As the coupling agent (D), a silane type (silane coupling agent) is preferable in terms of its versatility and cost merit. The coupling agent (D) as described above is usually 0.1 to 20 parts by weight, preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the thermosetting adhesive component (C).
15 parts by weight, particularly preferably 1 to 10 parts by weight are used.

【００３８】上記粘接着剤には、エネルギー線照射前の
初期接着力および凝集力を調節するために、有機多価イ
ソシアナート化合物、有機多価イミン化合物等を添加す
ることもできる。上記有機多価イソシアナート化合物と
しては、芳香族多価イソシアナート化合物、脂肪族多価
イソシアナート化合物、脂環族多価イソシアナート化合
物およびこれらの多価イソシアナート化合物の三量体、
ならびにこれら多価イソシアナート化合物とポリオール
化合物とを反応させて得られる末端イソシアナートウレ
タンプレポリマー等をあげることができる。有機多価イ
ソシアナート化合物のさらに具体的な例としては、たと
えば２，４−トリレンジイソシアナート、２，６−トリ
レンジイソシアナート、１，３−キシリレンジイソシア
ナート、１，４−キシレンジイソシアナート、ジフェニ
ルメタン−４，４'−ジイソシアナート、ジフェニルメ
タン−２，４'−ジイソシアナート、３−メチルジフェ
ニルメタンジイソシアナート、ヘキサメチレンジイソシ
アナート、イソホロンジイソシアナート、ジシクロヘキ
シルメタン−４，４'−ジイソシアナート、ジシクロヘ
キシルメタン−２，４'−ジイソシアナート、リジンイ
ソシアナートなどがあげられる。In order to adjust the initial adhesive force and cohesive force before irradiation of energy rays, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. may be added to the above-mentioned tacky adhesive. As the organic polyvalent isocyanate compound, an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, an alicyclic polyvalent isocyanate compound and a trimer of these polyvalent isocyanate compounds,
In addition, a terminal isocyanate urethane prepolymer obtained by reacting these polyvalent isocyanate compounds with a polyol compound can be used. More specific examples of the organic polyvalent isocyanate compound include, for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, and 1,4-xylene diisocyanate. Nato, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4 '. -Diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate and the like.

【００３９】上記有機多価イミン化合物の具体例として
は、N,N'-ジフェニルメタン-4,4'-ビス(1-アジリジンカ
ルボキシアミド)、トリメチロールプロパン-トリ-β-ア
ジリジニルプロピオナート、テトラメチロールメタン-
トリ-β-アジリジニルプロピオナート、N,N'-トルエン-
2,4-ビス(1-アジリジンカルボキシアミド)トリエチレン
メラミン等をあげることができる。Specific examples of the organic polyvalent imine compound include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate. , Tetramethylolmethane-
Tri-β-aziridinyl propionate, N, N'-toluene-
2,4-bis (1-aziridinecarboxamide) triethylenemelamine and the like can be mentioned.

【００４０】上記のような成分からなる第１の粘接着剤
層２の厚さは、通常は、３〜１００μｍ、好ましくは１
０〜６０μｍであることが望ましい。上記のような各成
分からなる粘接着剤はエネルギー線硬化性と加熱硬化性
とを有し、ダイシングの際には基材１に密着してウエハ
の固定に寄与し、マウントの際にはチップとダイパッド
部とを接着する接着剤として使用することができる。そ
して熱硬化を経て最終的には耐衝撃性の高い硬化物を与
えることができ、しかも剪断強度と剥離強度とのバラン
スにも優れ、厳しい熱湿条件下においても充分な接着物
性を保持しうる。The thickness of the first tacky-adhesive layer 2 comprising the above components is usually 3 to 100 μm, preferably 1
It is desirable that the thickness is 0 to 60 μm. The viscous adhesive composed of each component as described above has energy ray curability and heat curability, and adheres to the substrate 1 during dicing and contributes to fixing of the wafer, and during mounting. It can be used as an adhesive for bonding the chip and the die pad portion. Finally, after heat curing, a cured product with high impact resistance can be finally given, and also excellent balance between shear strength and peel strength, and sufficient adhesive property can be maintained even under severe heat and humidity conditions. .

【００４１】また、上記第１の粘接着剤層２および後述
する剛直層３、第２の粘接着剤層４には、さらに、ダイ
ボンド後の導電性または熱伝導性の付与を目的として、
金、銀、銅、ニッケル、アルミニウム、ステンレス、カ
ーボン、またはセラミック、あるいはニッケル、アルミ
ニウム等を銀で被覆したもののような導電性、熱伝導性
のフィラーを添加してもよい。これらの添加剤は、各層
の成分（該添加剤を除く）の合計１００重量部に対し
て、１０〜４００重量部程度の割合で配合されていても
よい。なお、導電性を目的とする場合には、後述の剛直
層も含めた３層がともに導電性を付与された材料から選
択される。The first adhesive / adhesive layer 2, the rigid layer 3 and the second adhesive / adhesive layer 4 which will be described later are further provided with the purpose of imparting electrical conductivity or thermal conductivity after die bonding. ,
A conductive or thermally conductive filler such as gold, silver, copper, nickel, aluminum, stainless steel, carbon, or ceramic, or nickel, aluminum, or the like coated with silver may be added. These additives may be blended in a ratio of about 10 to 400 parts by weight based on 100 parts by weight of the components (excluding the additive) of each layer. For the purpose of conductivity, all three layers including the rigid layer described later are selected from the materials having conductivity.

【００４２】剛直層３ 剛直層３は、ダイボンド後の粘接着剤層２と４の間に介
在し、全体としての貯蔵弾性率を向上させるために用い
られる。このような剛直層を構成する薄層膜としては、
−５０〜１５０℃での貯蔵弾性率が108Ｐａ以上、好ま
しくは109Ｐａ以上、さらに好ましくは1.2×109〜9.9×
1011Ｐａのものが望ましい。薄層膜としては、たとえば
硬化性樹脂からなる薄層膜、エンジニアリングプラスチ
ックフィルム、金属箔などが挙げられる。 Rigid Layer 3 The rigid layer 3 is interposed between the adhesive layers 2 and 4 after die bonding and is used to improve the storage elastic modulus as a whole. As a thin film that constitutes such a rigid layer,
Storage elastic modulus at −50 to 150 ° C. is 10 8 Pa or higher, preferably 10 9 Pa or higher, more preferably 1.2 × 10 9 to 9.9 ×
It is preferably 10 11 Pa. Examples of the thin layer film include a thin layer film made of a curable resin, an engineering plastic film, and a metal foil.

【００４３】なお、硬化性樹脂の場合は、該樹脂の硬化
後の−５０〜１５０℃での貯蔵弾性率が108Ｐａ以上で
ある必要があり、硬化前の貯蔵弾性率は特に限定されな
い。剛直層３の膜厚は特に限定はされないが、一般的に
は１０〜３００μｍ、好ましくは１５〜２００μｍ、特
に好ましくは２０〜１００μｍの範囲にある。硬化性樹
脂としては、たとえば前述した熱硬化型接着成分（Ｃ）
などが用いられ、特に好ましくはエポキシ系樹脂が用い
られる。In the case of a curable resin, the storage elastic modulus at −50 to 150 ° C. after curing of the resin must be 10 8 Pa or more, and the storage elastic modulus before curing is not particularly limited. The film thickness of the rigid layer 3 is not particularly limited, but is generally in the range of 10 to 300 μm, preferably 15 to 200 μm, and particularly preferably 20 to 100 μm. Examples of the curable resin include the thermosetting adhesive component (C) described above.
Etc. are used, and an epoxy resin is particularly preferably used.

【００４４】また、該硬化性樹脂には、必要に応じ、塗
工性や粘性を調整するために、前記ポリマー成分や溶剤
が含まれていても良い。ポリマー成分としては、ポリア
セタール樹脂、ウレタン樹脂、ポリエステル樹脂、アク
リル樹脂などの高分子化合物や、前述した粘着成分
（Ａ）を使用してもよい。たとえば、熱硬化型接着成分
（Ｃ）とポリマー成分とを併用する場合、成分（Ｃ）１
００重量部に対して、ポリマー成分は１０〜１００重量
部、好ましくは２０〜６０重量部程度の割合で用いられ
る。Further, the curable resin may contain the above-mentioned polymer component and solvent in order to adjust the coating property and the viscosity, if necessary. As the polymer component, a polymer compound such as a polyacetal resin, a urethane resin, a polyester resin, an acrylic resin, or the above-mentioned adhesive component (A) may be used. For example, when the thermosetting adhesive component (C) and the polymer component are used in combination, the component (C) 1
The polymer component is used in an amount of 10 to 100 parts by weight, preferably 20 to 60 parts by weight, based on 00 parts by weight.

【００４５】また、前記硬化性樹脂にフィラーを添加し
て貯蔵弾性率を適宜に調整することもできる。フィラー
としては、たとえば金、銀、銅、ニッケル、アルミニウ
ム、ステンレス、カーボン、グラファイト、セラミッ
ク、ガラス、シリカ、石英などの汎用フィラーが用いら
れる。特に高純度溶融石英フィラーや、高純度合成シリ
カフィラーが好ましく用いられる。Further, a storage elastic modulus can be appropriately adjusted by adding a filler to the curable resin. As the filler, for example, a general-purpose filler such as gold, silver, copper, nickel, aluminum, stainless steel, carbon, graphite, ceramics, glass, silica, quartz is used. In particular, high-purity fused silica filler and high-purity synthetic silica filler are preferably used.

【００４６】このようなフィラーは、硬化性樹脂１００
重量部中に、好ましくは１００〜２０００重量部、さら
に好ましくは５００〜１０００重量部程度の割合で用い
られる。さらに、上記硬化性樹脂には、必要に応じ、前
述したカップリング剤などが含まれていてもよい。さら
に凝集力等を調節するために、有機多価イソシアナート
化合物、有機多価イミン化合物等が含まれていてもよ
い。Such a filler is a curable resin 100.
It is preferably used in an amount of 100 to 2000 parts by weight, more preferably 500 to 1000 parts by weight. Furthermore, the above-mentioned coupling agent etc. may be contained in the said curable resin as needed. Further, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. may be contained in order to adjust the cohesive force and the like.

【００４７】剛直層３の他の態様であるエンジニアリン
グプラスチックフィルムとしては、ポリエチレンナフタ
レートフィルム、ポリエチレンテレフタレートフィル
ム、ポリブチレンテレフタレートフィルム、ポリイミド
フィルム、ポリエーテルイミドフィルム、ポリアラミド
フィルム、ポリエーテルケトンフィルム、ポリエーテル
・エーテルケトンフィルム、ポリフェニレンサルファイ
ドフィルム、ポリ（4-メチルペンテン-1）フィルム等が
用いられる。これらの中でもポリイミドフィルムが好ま
しく用いられる。As the engineering plastic film which is another embodiment of the rigid layer 3, polyethylene naphthalate film, polyethylene terephthalate film, polybutylene terephthalate film, polyimide film, polyetherimide film, polyaramid film, polyetherketone film, poly Ether / etherketone film, polyphenylene sulfide film, poly (4-methylpentene-1) film and the like are used. Of these, a polyimide film is preferably used.

【００４８】剛直層３のさらに他の態様である金属箔と
しては、銅、鉄、ニッケル、モリブデン、タングステン
などの単体の金属、黄銅（銅−亜鉛）、青銅（銅−
錫）、ベリリウム銅（銅−Be,Co,Ag,Cr）などの銅合
金、ステンレス鋼や、Si,Mn,Cr,W,Mo,Ti,Niなどとの鉄
合金（フェロアロイ）、チタン合金、マグネシウム合金
など、各種の単体金属や合金の箔等が用いられる。特
に、銅または銅合金からなることが好ましい。Examples of the metal foil which is still another mode of the rigid layer 3 include simple metals such as copper, iron, nickel, molybdenum and tungsten, brass (copper-zinc), bronze (copper-copper).
Tin), copper alloys such as beryllium copper (copper-Be, Co, Ag, Cr), stainless steel, iron alloys (ferroalloy) with Si, Mn, Cr, W, Mo, Ti, Ni, etc., titanium alloys, Various elemental metals such as magnesium alloys and foils of alloys are used. In particular, it is preferably made of copper or a copper alloy.

【００４９】剛直層３の両面には、第１および第２の粘
接着剤層２，４が形成される。したがって、層間の接着
強度を向上するために、剛直層３の両面にコロナ処理や
プライマー処理などを施しておいてもよい。第２の粘接着剤層４ 第２の粘接着剤層４は、後述する半導体装置の製造方法
において、ダイシング時にウエハを固定し、また切断分
離されたチップを保持するために用いられる。First and second adhesive layers 2 and 4 are formed on both surfaces of the rigid layer 3. Therefore, in order to improve the adhesive strength between the layers, both surfaces of the rigid layer 3 may be subjected to corona treatment or primer treatment. Second Adhesive / Adhesive Layer 4 The second adhesive / adhesive layer 4 is used to fix the wafer during dicing and to hold the cut and separated chips in the method of manufacturing a semiconductor device described later.

【００５０】したがって、従来よりこの種の用途に用い
られてきた粘接着剤が特に制限されることなく用いられ
る。しかしながら、ウエハの貼着を容易にできるように
粘着性を有することが好ましく、またダイボンド後の貯
蔵弾性率の向上に寄与するために、硬質な被膜に転換し
うる材料からなることが好ましい。このような粘接着剤
の具体例としては、たとえば前述した第１の粘接着剤層
２と同様の、（Ａ）粘着成分と、（Ｃ）熱硬化型接着成
分とからなる粘接着剤をあげることができる。ただし、
剛直層３との剥離性を考慮する必要はないので、エネル
ギー線硬化性成分（Ｂ）は配合しても良いし、配合しな
くても良い。Therefore, the tacky-adhesive agent which has been conventionally used for this type of application can be used without particular limitation. However, it is preferable to have adhesiveness so that wafers can be easily attached, and it is preferable to use a material that can be converted into a hard coating in order to contribute to the improvement of the storage elastic modulus after die bonding. Specific examples of such an adhesive / adhesive include an adhesive / adhesive composed of (A) an adhesive component and (C) a thermosetting adhesive component, similar to the first adhesive / adhesive layer 2 described above. I can give you an agent. However,
Since it is not necessary to consider the releasability from the rigid layer 3, the energy ray-curable component (B) may or may not be blended.

【００５１】この場合、成分（Ａ）１００重量部に対
し、成分（Ｃ）は好ましくは５０〜３０００重量部、さ
らに好ましくは１００〜２０００重量部程度の割合で用
いられる。さらに必要に応じ、前記第１の粘接着剤層２
と同様に、カップリング剤（Ｄ）、フィラーやイソシア
ナート化合物などの他の成分を含むものであってもよ
い。カップリング剤（Ｄ）は、前記熱硬化型接着成分
（Ｃ）１００重量部に対して好ましくは０．１〜２０重
量部、さらに好ましくは０．５〜１５重量部、特に好ま
しくは１〜１０重量部の割合で用いられる。In this case, the amount of the component (C) is preferably 50 to 3000 parts by weight, more preferably 100 to 2000 parts by weight, based on 100 parts by weight of the component (A). Further, if necessary, the first adhesive layer 2
Similarly to the above, it may contain other components such as a coupling agent (D), a filler and an isocyanate compound. The coupling agent (D) is preferably 0.1 to 20 parts by weight, more preferably 0.5 to 15 parts by weight, and particularly preferably 1 to 10 parts by weight with respect to 100 parts by weight of the thermosetting adhesive component (C). Used in proportions by weight.

【００５２】上記のような成分からなる第２の粘接着剤
層４の厚さは、通常は、３〜１００μｍ、好ましくは１
０〜６０μｍであることが望ましい。ウエハダイシング・接着用シート 本発明のウエハダイシング・接着用シート１０は、基材
１上に、第１の粘接着剤層２、剛直層３および第２の粘
接着剤層４がこの順に積層してなる。The thickness of the second adhesive layer 4 composed of the above components is usually 3 to 100 μm, preferably 1
It is desirable that the thickness is 0 to 60 μm. Wafer dicing / adhesion sheet A wafer dicing / adhesion sheet 10 of the present invention comprises a substrate 1, on which a first adhesive layer 2, a rigid layer 3, and a second adhesive layer 4 are arranged in this order. Stacked.

【００５３】ウエハダイシング・接着用シート１０の製
造方法は、特に限定はされず、基材１上に、第１の粘接
着剤層２、剛直層３および第２の粘接着剤層４を順次積
層してもよく、また基材１と第１の粘接着剤層２との積
層体、および剛直層３と第２の粘接着剤層４との積層体
を別個に製造し、これを積層するものであってもよい。The method for manufacturing the wafer dicing / adhesion sheet 10 is not particularly limited, and the first adhesive / adhesive layer 2, the rigid layer 3 and the second adhesive / adhesive layer 4 are formed on the substrate 1. May be sequentially laminated, and a laminate of the base material 1 and the first tacky-adhesive layer 2 and a laminate of the rigid layer 3 and the second tacky-adhesive layer 4 may be separately manufactured. It may be a laminate of these.

【００５４】なお、本発明のウエハダイシング・接着用
シート１０の使用前に、第２の粘接着剤層４を保護する
ために、シート１０の上面に離型フィルムを積層してお
いてもよい。また、第２の粘接着剤層４の表面外周部に
は、リングフレーム６を固定するためのリングフレーム
固定用粘着シート５が設けられていてもよい。Before using the wafer dicing / adhesive sheet 10 of the present invention, a release film may be laminated on the upper surface of the sheet 10 in order to protect the second adhesive layer 4. Good. Further, a ring frame fixing adhesive sheet 5 for fixing the ring frame 6 may be provided on the outer peripheral portion of the surface of the second adhesive / bonding agent layer 4.

【００５５】半導体装置の製造方法 次に本発明に係る半導体装置の製造方法について説明す
る。本発明の製造方法においては、まず、ウエハダイシ
ング・接着用シート１０をダイシング装置上に、リング
フレーム６により固定し、シリコンウエハ７の一方の面
をウエハダイシング・接着用シート１０の第２の粘接着
剤層４上に載置し、軽く押圧し、ウエハ７を固定する。 Method for Manufacturing Semiconductor Device Next, a method for manufacturing a semiconductor device according to the present invention will be described. In the manufacturing method of the present invention, first, the wafer dicing / adhesion sheet 10 is fixed on the dicing device by the ring frame 6, and one surface of the silicon wafer 7 is attached to the second dicing / adhesion sheet 10. It is placed on the adhesive layer 4 and lightly pressed to fix the wafer 7.

【００５６】その後、第１の粘接着剤層２に、エネルギ
ー線硬化性成分が含まれている場合は、基材１側からエ
ネルギー線を照射し、第１の粘接着剤層２の凝集力を上
げ、第１の粘接着剤層２と基材１との間の接着力を低下
させておく。次いで、ダイシングソーなどの切断手段を
用いて、上記のシリコンウエハ７を切断しＩＣチップ7'
を得る（図２参照）。この際の切断深さは、シリコンウ
エハ７の厚みと、第２の粘接着剤層４、剛直層３および
第１の粘接着剤層２の厚みとの合計およびダイシングソ
ーの磨耗分を加味した深さにする。After that, when the first adhesive / adhesive layer 2 contains an energy ray-curable component, the first adhesive / adhesive layer 2 is irradiated with energy rays from the base material 1 side. The cohesive force is increased and the adhesive force between the first adhesive / bonding agent layer 2 and the base material 1 is lowered. Then, the silicon wafer 7 is cut using a cutting means such as a dicing saw to cut the IC chip 7 '.
(See FIG. 2). The cutting depth at this time is the sum of the thickness of the silicon wafer 7 and the thicknesses of the second adhesive / adhesive layer 4, the rigid layer 3 and the first adhesive / adhesive layer 2, and the wear of the dicing saw. Adjust the depth to a certain level.

【００５７】なお、エネルギー線照射は、ダイシングの
後に行ってもよく、また下記のエキスパンド工程の後に
行ってもよい。次いで必要に応じ、接着用シート１０の
エキスパンドを行うと、図３に示すようにＩＣチップ間
隔が拡張し、ＩＣチップのピックアップをさらに容易に
行えるようになる。The irradiation with energy rays may be performed after dicing or after the expanding step described below. Then, if necessary, the adhesive sheet 10 is expanded, whereby the IC chip interval is expanded as shown in FIG. 3, and the IC chip can be more easily picked up.

【００５８】このようにしてＩＣチップ7'のピックアッ
プを行うと、切断された第２の粘接着剤層４、剛直層３
および第１の粘接着剤層２をＩＣチップ裏面に固着残存
させて基材１から剥離することができる（図４参照）。
次いで第１の粘接着剤層２を介してＩＣチップ7'をダイ
パッド部に載置する。ダイパッド部はＩＣチップ7'を載
置する前に加熱するか載置直後に加熱される。加熱温度
は、通常は８０〜２００℃、好ましくは１００〜１８０
℃であり、加熱時間は、通常は0.1秒〜５分、好ましく
は0.5秒〜３分であり、チップマウント圧力は、通常１
ｋＰａ〜１００ＭＰａである。When the IC chip 7'is picked up in this way, the cut second adhesive layer 4 and rigid layer 3 are cut.
Also, the first adhesive layer 2 can be fixedly left on the back surface of the IC chip and peeled from the base material 1 (see FIG. 4).
Next, the IC chip 7 ′ is placed on the die pad portion via the first adhesive layer 2. The die pad part is heated before mounting the IC chip 7'or immediately after mounting it. The heating temperature is usually 80 to 200 ° C., preferably 100 to 180.
C, the heating time is usually 0.1 seconds to 5 minutes, preferably 0.5 seconds to 3 minutes, and the chip mounting pressure is usually 1
It is kPa to 100 MPa.

【００５９】ＩＣチップをダイパッド部にチップマウン
トした後、さらに加熱することにより、第１の粘接着剤
層２および第２の粘接着剤層４が硬化し、ＩＣチップと
ダイパッド部とを強固に接着することができる。また剛
直層３を硬化性樹脂により形成した場合は、これと同時
に加熱により該硬化性樹脂が硬化し、剛直層３となる。
この際の加熱硬化条件としては、加熱温度は通常８０〜
２００℃、好ましくは１００〜１８０℃であり、加熱時
間は通常１分〜１２０分、好ましくは１０分〜９０分で
ある。After the IC chip is chip-mounted on the die pad portion, by further heating, the first adhesive layer 2 and the second adhesive layer 4 are cured, and the IC chip and the die pad portion are separated from each other. Can be firmly bonded. When the rigid layer 3 is made of a curable resin, the curable resin is cured by heating at the same time to form the rigid layer 3.
The heating temperature at this time is usually 80 to
The temperature is 200 ° C., preferably 100 to 180 ° C., and the heating time is usually 1 minute to 120 minutes, preferably 10 minutes to 90 minutes.

【００６０】この結果、得られる実装品においては、チ
ップの固着手段である粘接着剤が硬化し、かつ該硬化物
中に剛直層３が組み込まれた構成となるため、この固着
手段の貯蔵弾性率は極めて高くなり、過酷な条件下にあ
っても、十分なパッケージ信頼性とボード実装性が達成
される。なお、本発明の接着用シートは、上記のような
使用方法の他、半導体化合物、ガラス、セラミックス、
金属などの接着に使用することもできる。As a result, in the obtained mounted product, the visco-adhesive, which is the means for fixing the chip, is hardened, and the rigid layer 3 is incorporated in the hardened material. The elastic modulus is extremely high, and sufficient package reliability and board mountability are achieved even under severe conditions. Incidentally, the adhesive sheet of the present invention, in addition to the use method as described above, a semiconductor compound, glass, ceramics,
It can also be used for bonding metals and the like.

【００６１】[0061]

【発明の効果】このような本発明によれば、半導体ウエ
ハへの貼付作業およびＩＣチップのピックアップ操作を
円滑に行え、かつ貯蔵弾性率に優れたダイボンド層を形
成できる粘接着剤層をＩＣチップ裏面に転写できるウエ
ハダイシング・接着用シートが提供される。According to the present invention as described above, an adhesive / adhesive layer capable of smoothly adhering to a semiconductor wafer and picking up an IC chip and forming a die bond layer having an excellent storage elastic modulus is formed. Provided is a wafer dicing / bonding sheet that can be transferred to the back surface of a chip.

【００６２】[0062]

【実施例】以下本発明を実施例により説明するが、本発
明はこれら実施例に限定されるものではない。なお、以
下の実施例および比較例において、「貯蔵弾性率」、
「パッケージ信頼性」および「ボード実装信頼性」は次
のようにして評価した。 「貯蔵弾性率」ウエハダイシング・接着シートの剛直層
３の貯蔵弾性率は、動的粘弾性測定装置（オリエンテッ
ク社製、RHEOVIBRON DDV-II-EP）により、周波数１１Ｈ
ｚで−５０〜１５０℃の範囲を測定した。EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. In the following examples and comparative examples, "storage elastic modulus",
"Package reliability" and "board mounting reliability" were evaluated as follows. "Storage elastic modulus" The storage elastic modulus of the rigid layer 3 of the wafer dicing / adhesive sheet was measured with a dynamic viscoelasticity measuring device (RHEOVIBRON DDV-II-EP manufactured by Orientec Co., Ltd.) at a frequency of 11H.
The range of −50 to 150 ° C. was measured by z.

【００６３】なお、実施例４，５においては、剛直層で
あるポリイミドフィルムおよび電解銅箔を直接測定し
た。また、実施例１〜３，５，７および比較例１，２で
は、剛直層となる配合物を剥離シート上に塗布乾燥し、
乾燥膜厚５０μｍの硬化前の剛直層を得た。次に１６０
℃６０分間の加熱をして硬化させ、剥離シートを剥がし
て単層の剛直層を作成し、これの貯蔵弾性率を測定し
た。 「パッケージ信頼性」 （１）半導体チップの製造 ＃２０００研磨処理したシリコンウエハ（１００ｍｍ
径、厚さ２００μｍ）の研磨面に、実施例および比較例
のウエハダイシング・接着シートの貼付をテープマウン
ター（リンテック社製、Adwill RAD2500）により行い、
ウエハダイシング用リングフレーム（ディスコ社製、2-
6-1）に固定した。その後、ＵＶ照射装置（リンテック
社製、Adwill RAD2000）を用いて基材面から紫外線を照
射した。次に、ダイシング装置（東京精密社製、AWD-40
00B）を使用して9.0mm×9.0mmのチップサイズにダイシ
ングした。ダイシングの際の切り込み量は、基材を１０
μｍ切り込むようにした。続いて、ウエハダイシング・
接着シート側よりニードルで突き上げて、チップが基材
の界面から剥離するようにピックアップした。 （２）ＩＣパッケージの製造 ＩＣパッケージ用の基板（ポリイミドフィルム（５０μ
ｍ）と電解銅箔（２０μｍ）との積層体であり、ダイパ
ッド部として銅箔上にパラジウムメッキおよび金メッキ
を順にパターン処理し、更に高さ２５μｍのソルダーレ
ジストを有する）のダイパッド部に、積層状態のチップ
の第１の粘接着剤層側を１２０℃、１５０ＭＰａ、１秒
間の条件で圧着し、チップマウントを行った。その後、
１６０℃、６０分間の条件で粘接着剤層や剛直層を加熱
硬化した。更に、モールド樹脂（ビフェニル型エポキシ
樹脂とフェノールノボラック樹脂を含有）で基板のチッ
プの取り付けられた側を所定の形状にモールドし、１７
５℃、６時間で樹脂を硬化させて高圧封止した。次に、
封止されない基板側に直径０．５μｍの鉛フリーのハン
ダボールを所定の方法で取り付け、ＢＧＡ（Ball Grid
Allay）型のＩＣパッケージを完成させた。 （３）パッケージ信頼性の評価 得られたＩＣパッケージを８５℃、６０％ＲＨ条件下に
１６８時間放置し、吸湿させた後、最高温度２６０℃の
ＩＲリフローを２回行った際に接合部位の浮き・剥がれ
の有無、パッケージクラック発生の有無を走査型超音波
探傷装置および断面観察により評価した。 「ボード実装信頼性」上記「パッケージ信頼性」で作成
したＢＧＡ型のＩＣパッケージを、マザーボード（ＢＴ
レジンを用いて高密度実装用に積層されたビルドアップ
配線板）に２６０℃、１分で実装した。In Examples 4 and 5, the polyimide film and the electrolytic copper foil, which are rigid layers, were directly measured. In addition, in Examples 1 to 3, 5, 7 and Comparative Examples 1 and 2, the composition to be the rigid layer is applied and dried on the release sheet,
A rigid layer before curing having a dry film thickness of 50 μm was obtained. Then 160
The release sheet was peeled off by heating at 60 ° C. for 60 minutes to form a single rigid layer, and the storage elastic modulus thereof was measured. "Package reliability" (1) Manufacturing of semiconductor chip # 2000 Polished silicon wafer (100 mm
The wafer dicing / adhesive sheets of Examples and Comparative Examples were attached to a polished surface having a diameter and a thickness of 200 μm by a tape mounter (Adwill RAD2500 manufactured by Lintec Co., Ltd.),
Ring frame for wafer dicing (Disco, 2-
It was fixed to 6-1). After that, ultraviolet rays were irradiated from the surface of the base material using a UV irradiation device (Adwill RAD2000 manufactured by Lintec). Next, dicing machine (Tokyo Seimitsu Co., Ltd., AWD-40
00B) was used for dicing into a chip size of 9.0 mm × 9.0 mm. The cut amount during dicing is 10 for the base material.
It was made to cut by μm. Next, wafer dicing
It was pushed up from the adhesive sheet side with a needle and picked up so that the chip would peel from the interface of the base material. (2) Manufacture of IC package Substrate for IC package (polyimide film (50μ
m) and an electrolytic copper foil (20 μm), and a palladium pad and a gold plating are sequentially patterned on the copper foil as a die pad portion, and further, a die pad portion of 25 μm in height has a solder resist). The first adhesive / adhesive layer side of the chip was pressure-bonded under the conditions of 120 ° C., 150 MPa, and 1 second to mount the chip. afterwards,
The adhesive layer and the rigid layer were heat-cured at 160 ° C. for 60 minutes. Further, a chip resin side of the substrate is molded into a predetermined shape with a mold resin (containing a biphenyl type epoxy resin and a phenol novolac resin).
The resin was cured at 5 ° C. for 6 hours and high-pressure sealed. next,
A lead-free solder ball with a diameter of 0.5 μm was attached to the unsealed substrate side by a predetermined method, and BGA (Ball Grid)
Allay) type IC package was completed. (3) Evaluation of package reliability The obtained IC package was left under conditions of 85 ° C. and 60% RH for 168 hours to allow it to absorb moisture. The presence / absence of floating / peeling and the presence / absence of package cracking were evaluated by a scanning ultrasonic flaw detector and cross-sectional observation. “Board mounting reliability” The BGA type IC package created in the above “package reliability” is installed on the motherboard (BT
The resin was mounted on a build-up wiring board (laminated for high-density mounting) at 260 ° C. for 1 minute.

【００６４】ＩＣパッケージが実装されたマザーボード
を、−４０および１２５℃の熱衝撃（加熱１分間、加熱
温度保持９分間、冷却１分間、冷却温度保持９分間を１
サイクルとする）を１０００サイクル行った。マザーボ
ードとＩＣパッケージとの間に発生するクラックの有無
を走査型超音波探傷装置および断面観察により評価し
た。 「ウエハダイシング・接着用シートの作成」基材、粘接
着剤層、剛直層としては、下記のものを用いた。 基材：エチレン・メタクリル酸共重合体フィルム（厚さ
６０μｍ）と、エチレン・メタクリル酸メチル共重合体
フィルム（厚さ４０μｍ、表面張力３５dyn/cm）との積
層体を用いた。 粘接着剤：第１の粘接着剤（基材側）と第２の粘接着剤
（ウエハ側）の組成を下表に示す。これらは実施例およ
び比較例に共通である。なお、表中の「部」は重量部を
示す。The mother board on which the IC package is mounted is subjected to thermal shock of -40 and 125 ° C. (heating for 1 minute, heating temperature holding for 9 minutes, cooling for 1 minute, cooling temperature holding for 9 minutes.
1000 cycles). The presence or absence of cracks generated between the mother board and the IC package was evaluated by a scanning ultrasonic flaw detector and cross-section observation. "Preparation of Wafer Dicing / Adhesion Sheet" The following materials were used as the substrate, the adhesive layer and the rigid layer. Substrate: A laminate of an ethylene / methacrylic acid copolymer film (thickness 60 μm) and an ethylene / methyl methacrylate copolymer film (thickness 40 μm, surface tension 35 dyn / cm) was used. Adhesive: The composition of the first adhesive (base side) and the second adhesive (wafer side) is shown in the table below. These are common to the examples and comparative examples. In addition, "part" in a table | surface shows a weight part.

【００６５】[0065]

【表１】 [Table 1]

【００６６】剛直層：下表に記載の組成の樹脂、フィル
ムまたは銅箔を用いた。なお、表中の「部」は重量部を
示す。また特に記載した他は、厚みは５０μｍである。Rigid layer: A resin, film or copper foil having the composition shown in the table below was used. In addition, "part" in a table | surface shows a weight part. In addition, the thickness is 50 μm unless otherwise specified.

【００６７】[0067]

【表２】 [Table 2]

【００６８】なお、表中の各成分、材料は以下のとおり
である。 （１）粘着成分（Ａ）：アクリル酸ブチル５５重量部
と、メタクリル酸１０重量部と、メタクリル酸グリシジ
ル２０重量部とアクリル酸2-ヒドロキシエチル１５重量
部とを共重合してなる重量平均分子量８００，０００、
ガラス転移温度−２８℃の共重合体。 （２）熱硬化性接着成分（Ｃ）：下記成分からなる組成
物 アクリル分散ビスフェノールＡ型液状エポキシ樹脂（日
本触媒製、BPA328）：２０部 ジシクロペンタジエン骨格含有固形エポキシ樹脂（大日
本インキ化学工業製、EXA-7200HH）：２０部 ジシクロペンタジエン骨格含有固形エポキシ樹脂（日本
化薬製、XD-1000-L）：２０部 硬化剤（旭電化製、アデカハードナー3636AS）：２部 硬化促進剤（四国化成工業製、キュアゾール2PHZ）：２
部 （３）シランカップリング剤（Ｄ）：三菱化学製、MKC
シリケートMSEP2 （４）ポリイソシアナート：トリメチロールプロパンと
トルイレンジイソシアナートとの付加物 （５）紫外線硬化型粘着成分（Ａ＋Ｂ）：下記成分から
なる組成物 前記粘着成分（１）：１５部 エネルギー線硬化性成分 ジペンタエリスリトールヘキサアクリレート（日本化薬
製、カラヤッドDPHA）：６部 ジシクロペンタジエン骨格含有アクリレート（日本化薬
製、カラヤッドR684）：６部 （６）光重合開始剤 2,4,6-トリメチルベンゾイルジフェニルフォスフィンオ
キサイド：０．３６部（７）フェノキシ樹脂：エピコー
ト4275（ジャパンエポキシレジン社製） （８）ポリアセタール樹脂：エスレックBL-1（積水化学
社製） （９）高純度溶融石英フィラー：ＣＵＳ−８Ｉ（東芝セ
ラミックス製、平均粒径８μｍ） （１０）高純度合成シリカフィラー：ＳＯ−Ｃ２（アド
マテックス製、アドマファイン、平均粒径０．５μｍ） （１１）ポリイミドフィルム：ユーピレックス50S（５
０μｍ厚、宇部興産製） （１２）電解銅箔：ジャパンエナジー製、３５μｍ厚The components and materials in the table are as follows. (1) Adhesive component (A): Weight average molecular weight obtained by copolymerizing 55 parts by weight of butyl acrylate, 10 parts by weight of methacrylic acid, 20 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate. 800,000,
A copolymer having a glass transition temperature of -28 ° C. (2) Thermosetting adhesive component (C): Composition consisting of the following components Acrylic dispersion bisphenol A type liquid epoxy resin (Nippon Shokubai, BPA328): 20 parts dicyclopentadiene skeleton solid epoxy resin (Dainippon Ink and Chemicals Incorporated) Manufactured by EXA-7200HH): 20 parts dicyclopentadiene skeleton-containing solid epoxy resin (Nippon Kayaku, XD-1000-L): 20 parts curing agent (Asahi Denka Co., Ltd., Adeka Hardener 3636AS): 2 parts curing accelerator ( Shikoku Chemicals, Curezol 2PHZ): 2
Part (3) Silane coupling agent (D): Mitsubishi Chemical, MKC
Silicate MSEP2 (4) Polyisocyanate: Addition product of trimethylolpropane and toluylene diisocyanate (5) UV-curable adhesive component (A + B): Composition consisting of the following components Adhesive component (1): 15 parts energy rays Curable component dipentaerythritol hexaacrylate (Nippon Kayaku, Calayad DPHA): 6 parts Dicyclopentadiene skeleton-containing acrylate (Nippon Kayaku, Calayad R684): 6 parts (6) Photoinitiator 2,4,6 -Trimethylbenzoyldiphenylphosphine oxide: 0.36 parts (7) Phenoxy resin: Epicoat 4275 (manufactured by Japan Epoxy Resins) (8) Polyacetal resin: S-REC BL-1 (manufactured by Sekisui Chemical Co., Ltd.) (9) High-purity fused quartz Filler: CUS-8I (Toshiba Ceramics, average particle size 8 μm) (10) High-purity synthetic sili Filler: SO-C2 (Admatechs Ltd., Admafine, average particle size 0.5 [mu] m) (11) Polyimide Film: Upilex 50S (5
(0 μm thickness, Ube Industries) (12) Electrolytic copper foil: Japan Energy, 35 μm thickness

【００６９】[0069]

【実施例１〜３，６，７】第１の粘接着剤用の配合物
（表１参照）を塗布面保護用の離型シート（リンテック
社製、厚さ３８μｍ、SPPET3811）の離型処理面に、乾
燥膜厚が３０μｍとなるように、ロールナイフコーター
を用いて塗布乾燥し、厚み１００μｍの基材のエチレン
−メタクリル酸メチル共重合体フィルム側の面に積層し
た。次に、別の離型シート（SPPET3811）上に、剛直層
用の配合物（表２参照）を、乾燥膜厚が５０μｍとなる
ようにロールナイフコーターを用いて塗布乾燥し、第１
の粘接着剤層を保護している離型シートを剥離しなが
ら、第１の粘接着剤層と剛直層を積層した。続いて、更
に別の離型シート（SPPET3811）上に第２の粘接着剤層
用の配合物（表１参照）を、乾燥膜厚が２０μｍとなる
ようにロールナイフコーターを用いて塗布乾燥し、剛直
層面上の離型シートを剥離しながら、剛直層と第２の粘
接着剤層を積層し、ウエハダイシング・接着用シートを
作成した。[Examples 1 to 3, 6, 7] Release of a release agent sheet (manufactured by Lintec Co., thickness 38 μm, SPPET3811) for protecting the coated surface of the first adhesive composition (see Table 1) The treated surface was coated and dried using a roll knife coater so that the dry film thickness was 30 μm, and was laminated on the surface of the substrate having a thickness of 100 μm on the side of the ethylene-methyl methacrylate copolymer film. Next, another release sheet (SPPET3811) was coated with the composition for the rigid layer (see Table 2) using a roll knife coater so that the dry film thickness was 50 μm, and dried.
The first adhesive / adhesive layer and the rigid layer were laminated while the release sheet protecting the adhesive / adhesive layer was peeled off. Then, another release sheet (SPPET3811) was coated with the second compound for adhesive layer (see Table 1) using a roll knife coater so that the dry film thickness was 20 μm, and dried. Then, while peeling off the release sheet on the rigid layer surface, the rigid layer and the second adhesive layer were laminated to prepare a wafer dicing / bonding sheet.

【００７０】リングフレーム固定用粘着シートとして厚
さ８０μｍのポリ塩化ビニルフィルムの基材の片面に再
剥離性を有するアクリル系粘着剤（リンテック社製、Ｍ
−４）１０μｍを形成した粘着シートを用いた。このリ
ングフレーム固定用粘着シートを内径１６５mmの円形に
切り抜き、上記で作成したウエハダイシング・接着用シ
ートの第２の粘接着剤層で、リングフレーム固定用粘着
シートの基材面に貼り合せた。次に、リングフレーム固
定用粘着シートの円形の切り抜き部分と同心円になるよ
うに２０７mm径に切断して、図１に使用されるようなウ
エハダイシング・接着用シートとリングフレーム固定用
粘着シートの積層物を作成した。As an adhesive sheet for fixing the ring frame, an acrylic adhesive having removability is provided on one surface of a base material of a polyvinyl chloride film having a thickness of 80 μm (M manufactured by Lintec Co., Ltd.
-4) An adhesive sheet having a thickness of 10 μm was used. This ring frame fixing adhesive sheet was cut out into a circular shape having an inner diameter of 165 mm, and laminated on the substrate surface of the ring frame fixing adhesive sheet with the second adhesive layer of the wafer dicing / adhesion sheet prepared above. . Next, cut into a diameter of 207 mm so as to be concentric with the circular cutout portion of the ring frame fixing adhesive sheet, and stack the wafer dicing / bonding sheet and the ring frame fixing adhesive sheet as used in FIG. I created a thing.

【００７１】[0071]

【実施例４，５】第１の粘接着剤用の配合物（表１参
照）を離型シート（SPPET3811）の離型処理面に、乾燥
膜厚が３０μｍとなるように、ロールナイフコーターを
用いて塗布乾燥し、厚み１００μｍの基材のエチレン−
メタクリル酸メチル共重合体フィルム側の面に積層し
た。次に、別の離型シート（SPPET3811）上に、第２の
粘接着剤層用の配合物（表１参照）を、乾燥膜厚が２０
μｍとなるようにロールナイフコーターを用いて塗布乾
燥して剛直層（表２参照）に積層した。続いて、第１の
粘接着剤層を保護している離型シートを剥離しながら、
第１の粘接着剤層と剛直層をラミネーターで貼合して、
ウエハダイシング・接着用シートを作成した。[Examples 4 and 5] The first adhesive composition (see Table 1) was applied to the release-treated surface of the release sheet (SPPET3811) so that the dry film thickness was 30 μm, using a roll knife coater. Is coated and dried using a base material of ethylene having a thickness of 100 μm.
It was laminated on the surface of the methyl methacrylate copolymer film side. Next, another release sheet (SPPET3811) was coated with the compound for the second adhesive layer (see Table 1) at a dry film thickness of 20.
It was coated and dried using a roll knife coater so as to have a thickness of μm, and laminated on a rigid layer (see Table 2). Subsequently, while peeling off the release sheet protecting the first adhesive layer,
Laminate the first adhesive layer and the rigid layer with a laminator,
A wafer dicing / adhesion sheet was created.

【００７２】続いて、実施例１と同様にして、図１に使
用されるようなウエハ・ダイシング接着用シートとリン
グフレーム固定用粘着シートの積層物を作成した。上記
構成のウエハダイシング・接着用シートを用いて「貯蔵
弾性率」、「パッケージ信頼性」および「ボード実装信
頼性」の評価を行った。結果を表３に示す。Then, in the same manner as in Example 1, a laminate of the wafer dicing adhesive sheet and the ring frame fixing adhesive sheet as used in FIG. 1 was prepared. The "storage elastic modulus", "package reliability" and "board mounting reliability" were evaluated using the wafer dicing / adhesion sheet having the above structure. The results are shown in Table 3.

【００７３】[0073]

【表３】 [Table 3]

【００７４】[0074]

【比較例１】剛直層を用いなかった他は、実施例１と同
様の材料からなるウエハダイシング・接着用シートを作
成した。結果を表４に示す。Comparative Example 1 A wafer dicing / bonding sheet made of the same material as in Example 1 was prepared except that the rigid layer was not used. The results are shown in Table 4.

【００７５】[0075]

【比較例２】剛直層および第１の粘接着剤層を用いなか
った他は、実施例１と同様の材料からなるウエハダイシ
ング・接着用シートを作成した。結果を表４に示す。Comparative Example 2 A wafer dicing / adhesion sheet made of the same material as in Example 1 was prepared except that the rigid layer and the first tacky adhesive layer were not used. The results are shown in Table 4.

【００７６】[0076]

【表４】 [Table 4]

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係る半導体装置の製造方法の一工程を
示す。FIG. 1 shows one step of a method for manufacturing a semiconductor device according to the present invention.

【図２】本発明に係る半導体装置の製造方法の一工程を
示す。FIG. 2 shows one step of a method of manufacturing a semiconductor device according to the present invention.

【図３】本発明に係る半導体装置の製造方法の一工程を
示す。FIG. 3 shows one step of a method of manufacturing a semiconductor device according to the present invention.

【図４】本発明に係る半導体装置の製造方法の一工程を
示す。FIG. 4 shows one step of a method of manufacturing a semiconductor device according to the present invention.

【符号の説明】 １…基材 ２…第１の粘接着剤層 ３…剛直層 ４…第２の粘接着剤層 ５…リングフレーム固定用粘着シート ６…リングフレーム ７…半導体ウエハ 7'…ＩＣチップ １０…ウエハ・ダイシング接着シート[Explanation of symbols] 1 ... Base material 2 ... First adhesive layer 3 ... Rigid layer 4 ... Second adhesive layer 5 ... Adhesive sheet for fixing ring frame 6 ... Ring frame 7 ... Semiconductor wafer 7 '... IC chip 10 ... Wafer dicing adhesive sheet

───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4J004 AA01 AA02 AA05 AA10 AA11 AA12 AA13 AA14 AA15 AB06 CA03 CA04 CA06 CA08 CC02 FA04 FA05 FA08 5F047 AA17 BA33 BB19 CA01    ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4J004 AA01 AA02 AA05 AA10 AA11                       AA12 AA13 AA14 AA15 AB06                       CA03 CA04 CA06 CA08 CC02                       FA04 FA05 FA08                 5F047 AA17 BA33 BB19 CA01

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 基材上に、第１の粘接着剤層、剛直層お
よび第２の粘接着剤層がこの順に積層してなることを特
徴とするウエハダイシング・接着用シート。1. A wafer dicing / adhesion sheet comprising a substrate, and a first adhesive / adhesive layer, a rigid layer, and a second adhesive / adhesive layer laminated in this order. 【請求項２】 前記基材の前記第１の粘接着剤層に接す
る面の表面張力が４０dyn/cm以下であることを特徴とす
る請求項１に記載のウエハダイシング・接着用シート。2. The wafer dicing / bonding sheet according to claim 1, wherein the surface of the base material in contact with the first adhesive layer has a surface tension of 40 dyn / cm or less. 【請求項３】 前記剛直層が硬化性樹脂からなり、該樹
脂の硬化後の−５０〜１５０℃での貯蔵弾性率が108Ｐ
ａ以上であることを特徴とする請求項１または２に記載
のウエハダイシング・接着用シート。3. The rigid layer is made of a curable resin, and has a storage elastic modulus at −50 to 150 ° C. of 10 8 P after curing of the resin.
The wafer dicing / bonding sheet according to claim 1, wherein the sheet is a or more. 【請求項４】 前記剛直層がエンジニアリングプラスチ
ックからなることを特徴とする請求項１または２に記載
のウエハダイシング・接着用シート。4. The wafer dicing / adhesion sheet according to claim 1, wherein the rigid layer is made of engineering plastic. 【請求項５】 前記剛直層が金属箔からなることを特徴
とする請求項１または２に記載のウエハダイシング・接
着用シート。5. The wafer dicing / bonding sheet according to claim 1, wherein the rigid layer is made of a metal foil. 【請求項６】 基材上に、第１の粘接着剤層、剛直層お
よび第２の粘接着剤層がこの順に積層してなるウエハダ
イシング・接着用シートの第２の粘接着剤層に、半導体
ウエハを貼着し、前記半導体ウエハをダイシングしてＩ
Ｃチップとし、前記ＩＣチップ裏面に第２の粘接着剤
層、剛直層、第１の粘接着剤層を固着残存させて基材か
ら剥離し、前記ＩＣチップをダイパッド部上に前記第１
の粘接着剤層を介して熱圧着することを特徴とする半導
体装置の製造方法。6. A second adhesive / bonding sheet for wafer dicing / bonding, which comprises a base material, and a first adhesive / adhesive layer, a rigid layer and a second adhesive / adhesive layer laminated in this order. A semiconductor wafer is attached to the agent layer, and the semiconductor wafer is diced to
As a C chip, the second adhesive / adhesive layer, the rigid layer, and the first adhesive / adhesive layer are fixedly left on the back surface of the IC chip and peeled off from the base material, and the IC chip is placed on the die pad portion with the first adhesive layer. 1
A method for manufacturing a semiconductor device, which comprises thermocompression-bonding via the adhesive / adhesive layer.
JP2002006432A 2002-01-15 2002-01-15 Wafer dicing / bonding sheet and method of manufacturing semiconductor device Expired - Lifetime JP4067308B2 (en)

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