JP4522904B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4522904B2
JP4522904B2 JP2005114330A JP2005114330A JP4522904B2 JP 4522904 B2 JP4522904 B2 JP 4522904B2 JP 2005114330 A JP2005114330 A JP 2005114330A JP 2005114330 A JP2005114330 A JP 2005114330A JP 4522904 B2 JP4522904 B2 JP 4522904B2
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Japan
Prior art keywords
gate electrode
electrode layer
insulating film
semiconductor layer
forming
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Expired - Fee Related
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JP2005114330A
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Japanese (ja)
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JP2005333118A (ja
JP2005333118A5 (enrdf_load_stackoverflow
Inventor
洋平 神野
康子 渡辺
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005114330A priority Critical patent/JP4522904B2/ja
Publication of JP2005333118A publication Critical patent/JP2005333118A/ja
Publication of JP2005333118A5 publication Critical patent/JP2005333118A5/ja
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Publication of JP4522904B2 publication Critical patent/JP4522904B2/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005114330A 2004-04-19 2005-04-12 半導体装置の作製方法 Expired - Fee Related JP4522904B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005114330A JP4522904B2 (ja) 2004-04-19 2005-04-12 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004122388 2004-04-19
JP2005114330A JP4522904B2 (ja) 2004-04-19 2005-04-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005333118A JP2005333118A (ja) 2005-12-02
JP2005333118A5 JP2005333118A5 (enrdf_load_stackoverflow) 2008-04-17
JP4522904B2 true JP4522904B2 (ja) 2010-08-11

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Family Applications (1)

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JP2005114330A Expired - Fee Related JP4522904B2 (ja) 2004-04-19 2005-04-12 半導体装置の作製方法

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JP (1) JP4522904B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4424304B2 (ja) 2005-12-07 2010-03-03 セイコーエプソン株式会社 ディスプレイの製造方法、ディスプレイおよび電子機器
EP1845514B1 (en) * 2006-04-14 2013-10-02 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
KR101945301B1 (ko) * 2009-10-16 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
CN103165471A (zh) * 2013-02-19 2013-06-19 京东方科技集团股份有限公司 薄膜晶体管及其制作方法和显示装置
JP7345261B2 (ja) 2019-02-26 2023-09-15 ローム株式会社 電極構造および半導体発光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731714B2 (ja) * 2000-04-17 2011-07-27 株式会社半導体エネルギー研究所 発光装置
JP4522642B2 (ja) * 2001-05-18 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7118943B2 (en) * 2002-04-22 2006-10-10 Seiko Epson Corporation Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment

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Publication number Publication date
JP2005333118A (ja) 2005-12-02

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