JP4521537B2 - 同調可能なmemsフィルムバルク音響波マイクロ共振器 - Google Patents
同調可能なmemsフィルムバルク音響波マイクロ共振器 Download PDFInfo
- Publication number
- JP4521537B2 JP4521537B2 JP2003568775A JP2003568775A JP4521537B2 JP 4521537 B2 JP4521537 B2 JP 4521537B2 JP 2003568775 A JP2003568775 A JP 2003568775A JP 2003568775 A JP2003568775 A JP 2003568775A JP 4521537 B2 JP4521537 B2 JP 4521537B2
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- Prior art keywords
- resonator
- changing
- electrode
- piezoelectric material
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 63
- 230000005284 excitation Effects 0.000 claims description 37
- 230000000694 effects Effects 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 7
- 230000004048 modification Effects 0.000 description 36
- 238000012986 modification Methods 0.000 description 36
- 238000000034 method Methods 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/241—Bulk-mode MEMS resonators
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0201759A FR2835981B1 (fr) | 2002-02-13 | 2002-02-13 | Microresonateur mems a ondes acoustiques de volume accordable |
PCT/FR2003/000427 WO2003069776A2 (fr) | 2002-02-13 | 2003-02-11 | Microresonateur mems a ondes acoustiques de volume accordable |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005528010A JP2005528010A (ja) | 2005-09-15 |
JP4521537B2 true JP4521537B2 (ja) | 2010-08-11 |
Family
ID=27620154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003568775A Expired - Lifetime JP4521537B2 (ja) | 2002-02-13 | 2003-02-11 | 同調可能なmemsフィルムバルク音響波マイクロ共振器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7592739B2 (fr) |
EP (1) | EP1474866B1 (fr) |
JP (1) | JP4521537B2 (fr) |
FR (1) | FR2835981B1 (fr) |
WO (1) | WO2003069776A2 (fr) |
Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2852165A1 (fr) * | 2003-03-06 | 2004-09-10 | St Microelectronics Sa | Procede de realisation d'un microresonateur piezolectrique accordable |
FR2853487A1 (fr) * | 2003-04-01 | 2004-10-08 | St Microelectronics Sa | Composant electronique permettant le decodage de signaux de television numerique par satellite |
FR2853486B1 (fr) * | 2003-04-03 | 2005-08-05 | St Microelectronics Sa | Composant electronique permettant le decodage de signaux de television numerique ou par cable |
FR2853796B1 (fr) * | 2003-04-11 | 2005-07-01 | St Microelectronics Sa | Composant electronique permettant le decodage de signaux de television numerique terrestre ou par cable. |
FR2853795B1 (fr) * | 2003-04-11 | 2005-07-01 | St Microelectronics Sa | Composant electronique avec dispositif de syntonisation integre, permettant le decodage de signaux de television numerique terrestre ou par cable. |
JP2007522609A (ja) * | 2003-12-22 | 2007-08-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ピエゾ電気材料でできたマイクロ電気機械スイッチを備える電子装置 |
EP1548768B1 (fr) | 2003-12-24 | 2012-02-22 | Imec | Résonateur à couche mince à micro-usinage |
US7068125B2 (en) * | 2004-03-04 | 2006-06-27 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
JP2005311568A (ja) * | 2004-04-20 | 2005-11-04 | Sony Corp | フィルタ装置及び送受信機 |
JP4377740B2 (ja) | 2004-04-28 | 2009-12-02 | 株式会社東芝 | 圧電駆動型mems素子およびこの圧電駆動型mems素子を有する移動体通信機 |
US7102467B2 (en) * | 2004-04-28 | 2006-09-05 | Robert Bosch Gmbh | Method for adjusting the frequency of a MEMS resonator |
US7960900B2 (en) * | 2004-06-14 | 2011-06-14 | Stmicroelectronics S.A. | Assembly of a microswitch and of an acoustic resonator |
JP2008522492A (ja) * | 2004-11-20 | 2008-06-26 | センテラ インコーポレイテッド | 高周波信号放出装置 |
US7280078B2 (en) | 2004-11-20 | 2007-10-09 | Scenterra, Inc. | Sensor for detecting high frequency signals |
KR100639918B1 (ko) * | 2004-12-16 | 2006-11-01 | 한국전자통신연구원 | Mems 액츄에이터 |
KR100629488B1 (ko) * | 2005-02-28 | 2006-09-28 | 삼성전자주식회사 | 공진기 |
JP2006289520A (ja) * | 2005-04-06 | 2006-10-26 | Toshiba Corp | Mems技術を使用した半導体装置 |
EP1880403B1 (fr) * | 2005-05-02 | 2012-06-13 | Epcos Ag | Dispositif mems rf pourvu d'un condensateur de decouplage integre |
JP4523879B2 (ja) * | 2005-06-20 | 2010-08-11 | 株式会社日立製作所 | 電気・音響変換素子、アレイ型超音波トランスデューサおよび超音波診断装置 |
WO2007092991A1 (fr) * | 2006-02-13 | 2007-08-23 | Commonwealth Scientific And Industrial Research Organisation | transducteur acoustique basse fréquence pour sonde d'essais non destructifs |
JP4839099B2 (ja) * | 2006-03-03 | 2011-12-14 | オリンパスメディカルシステムズ株式会社 | マイクロマシンプロセスにより製造された超音波振動子、超音波振動子装置、その体腔内超音波診断装置、及びその制御方法 |
JP4728866B2 (ja) * | 2006-04-13 | 2011-07-20 | 株式会社東芝 | 共振回路、フィルタ回路および発振回路 |
FR2911448B1 (fr) * | 2007-01-16 | 2009-07-10 | St Microelectronics Sa | Resonateur acoustique en volume a frequence de resonance reglable et utilisation d'un tel resonateur dans le domaine de la telephonie |
US20080283944A1 (en) * | 2007-05-18 | 2008-11-20 | Geefay Frank S | PHOTOSTRUCTURABLE GLASS MICROELECTROMECHANICAL (MEMs) DEVICES AND METHODS OF MANUFACTURE |
JP2009055683A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 圧電駆動型mems装置および携帯端末 |
JP5352975B2 (ja) * | 2007-08-31 | 2013-11-27 | オムロン株式会社 | 素子集合体及びその製造方法 |
JP4538503B2 (ja) * | 2008-01-18 | 2010-09-08 | Okiセミコンダクタ株式会社 | 共振器 |
US8704315B2 (en) * | 2008-06-26 | 2014-04-22 | Cornell University | CMOS integrated micromechanical resonators and methods for fabricating the same |
US7834524B2 (en) * | 2009-01-30 | 2010-11-16 | Integrated Device Technology, Inc. | Micro-electromechanical devices having variable capacitors therein that compensate for temperature-induced frequency drift in acoustic resonators |
DE102009007316A1 (de) * | 2009-02-03 | 2010-08-05 | Epcos Ag | Elektrisches Vielschichtbauelement |
DE102010013611A1 (de) * | 2010-03-22 | 2011-09-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hybridaktorelement und Verfahren zu seiner Herstellung |
FR2965991B1 (fr) * | 2010-10-12 | 2013-07-12 | St Microelectronics Tours Sas | Dispositif acoustique d'isolation galvanique |
WO2012073829A1 (fr) * | 2010-11-30 | 2012-06-07 | 株式会社 村田製作所 | Résonateur à ondes élastiques de volume |
US20120245408A1 (en) * | 2011-03-22 | 2012-09-27 | University Of Washington Through Its Center For Commercialization | Methods and systems for improving actuator performance by reducing tensile stresses in piezoelectric thin films |
JP5921079B2 (ja) * | 2011-04-06 | 2016-05-24 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
CN103765769B (zh) * | 2011-09-01 | 2016-12-28 | 株式会社村田制作所 | 压电体波装置及其制造方法 |
US9054671B2 (en) | 2011-11-09 | 2015-06-09 | International Business Machines Corporation | Tunable filter structures and design structures |
US8723399B2 (en) * | 2011-12-27 | 2014-05-13 | Massachusetts Institute Of Technology | Tunable ultrasound transducers |
US9225311B2 (en) | 2012-02-21 | 2015-12-29 | International Business Machines Corporation | Method of manufacturing switchable filters |
US20130300571A1 (en) * | 2012-04-18 | 2013-11-14 | Farrokh Mohamadi | Interrogation of active and passive proppants for real-time monitoring of fractured wells |
US8902010B2 (en) * | 2013-01-02 | 2014-12-02 | Motorola Mobility Llc | Microelectronic machine-based ariable |
DE102013209804A1 (de) * | 2013-05-27 | 2014-11-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrostatischer aktuator und verfahren zum herstellen desselben |
DE102013209823B4 (de) * | 2013-05-27 | 2015-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optische Struktur mit daran angeordneten Stegen und Verfahren zur Herstellung derselben |
DE102013209814B4 (de) * | 2013-05-27 | 2015-01-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optische Struktur mit daran angeordneten Stegen und Verfahren zur Herstellung derselben |
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JP6365690B2 (ja) | 2015-01-13 | 2018-08-01 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
US10656255B2 (en) | 2016-05-04 | 2020-05-19 | Invensense, Inc. | Piezoelectric micromachined ultrasonic transducer (PMUT) |
US10670716B2 (en) | 2016-05-04 | 2020-06-02 | Invensense, Inc. | Operating a two-dimensional array of ultrasonic transducers |
US10445547B2 (en) | 2016-05-04 | 2019-10-15 | Invensense, Inc. | Device mountable packaging of ultrasonic transducers |
US10315222B2 (en) | 2016-05-04 | 2019-06-11 | Invensense, Inc. | Two-dimensional array of CMOS control elements |
US10325915B2 (en) | 2016-05-04 | 2019-06-18 | Invensense, Inc. | Two-dimensional array of CMOS control elements |
US10632500B2 (en) | 2016-05-10 | 2020-04-28 | Invensense, Inc. | Ultrasonic transducer with a non-uniform membrane |
US10452887B2 (en) | 2016-05-10 | 2019-10-22 | Invensense, Inc. | Operating a fingerprint sensor comprised of ultrasonic transducers |
US10408797B2 (en) | 2016-05-10 | 2019-09-10 | Invensense, Inc. | Sensing device with a temperature sensor |
US10441975B2 (en) | 2016-05-10 | 2019-10-15 | Invensense, Inc. | Supplemental sensor modes and systems for ultrasonic transducers |
US10706835B2 (en) | 2016-05-10 | 2020-07-07 | Invensense, Inc. | Transmit beamforming of a two-dimensional array of ultrasonic transducers |
US10539539B2 (en) | 2016-05-10 | 2020-01-21 | Invensense, Inc. | Operation of an ultrasonic sensor |
US10562070B2 (en) | 2016-05-10 | 2020-02-18 | Invensense, Inc. | Receive operation of an ultrasonic sensor |
US10600403B2 (en) | 2016-05-10 | 2020-03-24 | Invensense, Inc. | Transmit operation of an ultrasonic sensor |
US11673165B2 (en) | 2016-05-10 | 2023-06-13 | Invensense, Inc. | Ultrasonic transducer operable in a surface acoustic wave (SAW) mode |
CN106449960B (zh) * | 2016-07-01 | 2018-12-25 | 中国计量大学 | 一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法 |
JP6618938B2 (ja) * | 2017-02-10 | 2019-12-11 | 株式会社東芝 | トランスデューサおよびトランスデューサアレイ |
US10891461B2 (en) | 2017-05-22 | 2021-01-12 | Invensense, Inc. | Live fingerprint detection utilizing an integrated ultrasound and infrared sensor |
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US10984209B2 (en) | 2017-12-01 | 2021-04-20 | Invensense, Inc. | Darkfield modeling |
US10936841B2 (en) | 2017-12-01 | 2021-03-02 | Invensense, Inc. | Darkfield tracking |
US10997388B2 (en) | 2017-12-01 | 2021-05-04 | Invensense, Inc. | Darkfield contamination detection |
US11151355B2 (en) | 2018-01-24 | 2021-10-19 | Invensense, Inc. | Generation of an estimated fingerprint |
US10901021B2 (en) | 2018-02-27 | 2021-01-26 | Applied Materials, Inc. | Method for detecting wafer processing parameters with micro resonator array sensors |
US10755067B2 (en) | 2018-03-22 | 2020-08-25 | Invensense, Inc. | Operating a fingerprint sensor comprised of ultrasonic transducers |
US10936843B2 (en) | 2018-12-28 | 2021-03-02 | Invensense, Inc. | Segmented image acquisition |
US11188735B2 (en) | 2019-06-24 | 2021-11-30 | Invensense, Inc. | Fake finger detection using ridge features |
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WO2021033030A1 (fr) * | 2019-08-21 | 2021-02-25 | Vermon Sa | Dispositif à ultrasons accordable en fréquence |
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US11392789B2 (en) | 2019-10-21 | 2022-07-19 | Invensense, Inc. | Fingerprint authentication using a synthetic enrollment image |
IT201900023943A1 (it) * | 2019-12-13 | 2021-06-13 | St Microelectronics Srl | Trasduttore mut comprendente un risuonatore di helmoltz accordabile |
WO2021183457A1 (fr) | 2020-03-09 | 2021-09-16 | Invensense, Inc. | Capteur d'empreintes digitales à ultrasons doté d'une couche de contact d'épaisseur non uniforme |
US11243300B2 (en) | 2020-03-10 | 2022-02-08 | Invensense, Inc. | Operating a fingerprint sensor comprised of ultrasonic transducers and a presence sensor |
US11328165B2 (en) | 2020-04-24 | 2022-05-10 | Invensense, Inc. | Pressure-based activation of fingerprint spoof detection |
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CN113714071B (zh) * | 2021-08-10 | 2022-05-24 | 中北大学 | 高灵敏度微压检测倒置台形空腔结构电容式微机械超声换能器 |
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JPS60187116A (ja) * | 1984-03-07 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 薄膜振動共振子の共振周波数調整方法 |
JPS6382116A (ja) * | 1986-09-26 | 1988-04-12 | Matsushita Electric Ind Co Ltd | 圧電薄膜共振子およびその製造方法 |
JPS63187713A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 集積型圧電薄膜機能素子 |
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JPH11284481A (ja) * | 1998-03-30 | 1999-10-15 | Murata Mfg Co Ltd | 圧電薄膜振動子およびその製造方法 |
FI108583B (fi) | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6359374B1 (en) * | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
JP2001156350A (ja) * | 1999-11-25 | 2001-06-08 | Matsushita Electric Works Ltd | 半導体マイクロアクチュエータ |
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JP2002016477A (ja) * | 2000-06-30 | 2002-01-18 | Kyocera Corp | 弾性表面波装置 |
US6936954B2 (en) * | 2001-08-29 | 2005-08-30 | Honeywell International Inc. | Bulk resonator |
US7038355B2 (en) * | 2003-04-03 | 2006-05-02 | Stmicroelectronics Sa | Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients |
FR2857785B1 (fr) * | 2003-07-17 | 2005-10-21 | Commissariat Energie Atomique | Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation |
US7323805B2 (en) * | 2004-01-28 | 2008-01-29 | Kabushiki Kaisha Toshiba | Piezoelectric thin film device and method for manufacturing the same |
JP4408266B2 (ja) * | 2004-04-22 | 2010-02-03 | 日本碍子株式会社 | マイクロスイッチ及びその製造方法 |
-
2002
- 2002-02-13 FR FR0201759A patent/FR2835981B1/fr not_active Expired - Fee Related
-
2003
- 2003-02-11 US US10/502,802 patent/US7592739B2/en not_active Expired - Lifetime
- 2003-02-11 JP JP2003568775A patent/JP4521537B2/ja not_active Expired - Lifetime
- 2003-02-11 EP EP03739523A patent/EP1474866B1/fr not_active Expired - Lifetime
- 2003-02-11 WO PCT/FR2003/000427 patent/WO2003069776A2/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2003069776A2 (fr) | 2003-08-21 |
FR2835981A1 (fr) | 2003-08-15 |
EP1474866B1 (fr) | 2012-08-29 |
US20050162040A1 (en) | 2005-07-28 |
FR2835981B1 (fr) | 2005-04-29 |
JP2005528010A (ja) | 2005-09-15 |
WO2003069776A3 (fr) | 2004-04-08 |
EP1474866A2 (fr) | 2004-11-10 |
US7592739B2 (en) | 2009-09-22 |
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