JP4521537B2 - 同調可能なmemsフィルムバルク音響波マイクロ共振器 - Google Patents

同調可能なmemsフィルムバルク音響波マイクロ共振器 Download PDF

Info

Publication number
JP4521537B2
JP4521537B2 JP2003568775A JP2003568775A JP4521537B2 JP 4521537 B2 JP4521537 B2 JP 4521537B2 JP 2003568775 A JP2003568775 A JP 2003568775A JP 2003568775 A JP2003568775 A JP 2003568775A JP 4521537 B2 JP4521537 B2 JP 4521537B2
Authority
JP
Japan
Prior art keywords
resonator
changing
electrode
piezoelectric material
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003568775A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005528010A (ja
Inventor
フィリップ・ロバート
Original Assignee
コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ filed Critical コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
Publication of JP2005528010A publication Critical patent/JP2005528010A/ja
Application granted granted Critical
Publication of JP4521537B2 publication Critical patent/JP4521537B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173Air-gaps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241Bulk-mode MEMS resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2003568775A 2002-02-13 2003-02-11 同調可能なmemsフィルムバルク音響波マイクロ共振器 Expired - Lifetime JP4521537B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0201759A FR2835981B1 (fr) 2002-02-13 2002-02-13 Microresonateur mems a ondes acoustiques de volume accordable
PCT/FR2003/000427 WO2003069776A2 (fr) 2002-02-13 2003-02-11 Microresonateur mems a ondes acoustiques de volume accordable

Publications (2)

Publication Number Publication Date
JP2005528010A JP2005528010A (ja) 2005-09-15
JP4521537B2 true JP4521537B2 (ja) 2010-08-11

Family

ID=27620154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003568775A Expired - Lifetime JP4521537B2 (ja) 2002-02-13 2003-02-11 同調可能なmemsフィルムバルク音響波マイクロ共振器

Country Status (5)

Country Link
US (1) US7592739B2 (fr)
EP (1) EP1474866B1 (fr)
JP (1) JP4521537B2 (fr)
FR (1) FR2835981B1 (fr)
WO (1) WO2003069776A2 (fr)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2852165A1 (fr) * 2003-03-06 2004-09-10 St Microelectronics Sa Procede de realisation d'un microresonateur piezolectrique accordable
FR2853487A1 (fr) * 2003-04-01 2004-10-08 St Microelectronics Sa Composant electronique permettant le decodage de signaux de television numerique par satellite
FR2853486B1 (fr) * 2003-04-03 2005-08-05 St Microelectronics Sa Composant electronique permettant le decodage de signaux de television numerique ou par cable
FR2853796B1 (fr) * 2003-04-11 2005-07-01 St Microelectronics Sa Composant electronique permettant le decodage de signaux de television numerique terrestre ou par cable.
FR2853795B1 (fr) * 2003-04-11 2005-07-01 St Microelectronics Sa Composant electronique avec dispositif de syntonisation integre, permettant le decodage de signaux de television numerique terrestre ou par cable.
JP2007522609A (ja) * 2003-12-22 2007-08-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ピエゾ電気材料でできたマイクロ電気機械スイッチを備える電子装置
EP1548768B1 (fr) 2003-12-24 2012-02-22 Imec Résonateur à couche mince à micro-usinage
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
JP2005311568A (ja) * 2004-04-20 2005-11-04 Sony Corp フィルタ装置及び送受信機
JP4377740B2 (ja) 2004-04-28 2009-12-02 株式会社東芝 圧電駆動型mems素子およびこの圧電駆動型mems素子を有する移動体通信機
US7102467B2 (en) * 2004-04-28 2006-09-05 Robert Bosch Gmbh Method for adjusting the frequency of a MEMS resonator
US7960900B2 (en) * 2004-06-14 2011-06-14 Stmicroelectronics S.A. Assembly of a microswitch and of an acoustic resonator
JP2008522492A (ja) * 2004-11-20 2008-06-26 センテラ インコーポレイテッド 高周波信号放出装置
US7280078B2 (en) 2004-11-20 2007-10-09 Scenterra, Inc. Sensor for detecting high frequency signals
KR100639918B1 (ko) * 2004-12-16 2006-11-01 한국전자통신연구원 Mems 액츄에이터
KR100629488B1 (ko) * 2005-02-28 2006-09-28 삼성전자주식회사 공진기
JP2006289520A (ja) * 2005-04-06 2006-10-26 Toshiba Corp Mems技術を使用した半導体装置
EP1880403B1 (fr) * 2005-05-02 2012-06-13 Epcos Ag Dispositif mems rf pourvu d'un condensateur de decouplage integre
JP4523879B2 (ja) * 2005-06-20 2010-08-11 株式会社日立製作所 電気・音響変換素子、アレイ型超音波トランスデューサおよび超音波診断装置
WO2007092991A1 (fr) * 2006-02-13 2007-08-23 Commonwealth Scientific And Industrial Research Organisation transducteur acoustique basse fréquence pour sonde d'essais non destructifs
JP4839099B2 (ja) * 2006-03-03 2011-12-14 オリンパスメディカルシステムズ株式会社 マイクロマシンプロセスにより製造された超音波振動子、超音波振動子装置、その体腔内超音波診断装置、及びその制御方法
JP4728866B2 (ja) * 2006-04-13 2011-07-20 株式会社東芝 共振回路、フィルタ回路および発振回路
FR2911448B1 (fr) * 2007-01-16 2009-07-10 St Microelectronics Sa Resonateur acoustique en volume a frequence de resonance reglable et utilisation d'un tel resonateur dans le domaine de la telephonie
US20080283944A1 (en) * 2007-05-18 2008-11-20 Geefay Frank S PHOTOSTRUCTURABLE GLASS MICROELECTROMECHANICAL (MEMs) DEVICES AND METHODS OF MANUFACTURE
JP2009055683A (ja) * 2007-08-24 2009-03-12 Toshiba Corp 圧電駆動型mems装置および携帯端末
JP5352975B2 (ja) * 2007-08-31 2013-11-27 オムロン株式会社 素子集合体及びその製造方法
JP4538503B2 (ja) * 2008-01-18 2010-09-08 Okiセミコンダクタ株式会社 共振器
US8704315B2 (en) * 2008-06-26 2014-04-22 Cornell University CMOS integrated micromechanical resonators and methods for fabricating the same
US7834524B2 (en) * 2009-01-30 2010-11-16 Integrated Device Technology, Inc. Micro-electromechanical devices having variable capacitors therein that compensate for temperature-induced frequency drift in acoustic resonators
DE102009007316A1 (de) * 2009-02-03 2010-08-05 Epcos Ag Elektrisches Vielschichtbauelement
DE102010013611A1 (de) * 2010-03-22 2011-09-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hybridaktorelement und Verfahren zu seiner Herstellung
FR2965991B1 (fr) * 2010-10-12 2013-07-12 St Microelectronics Tours Sas Dispositif acoustique d'isolation galvanique
WO2012073829A1 (fr) * 2010-11-30 2012-06-07 株式会社 村田製作所 Résonateur à ondes élastiques de volume
US20120245408A1 (en) * 2011-03-22 2012-09-27 University Of Washington Through Its Center For Commercialization Methods and systems for improving actuator performance by reducing tensile stresses in piezoelectric thin films
JP5921079B2 (ja) * 2011-04-06 2016-05-24 キヤノン株式会社 電気機械変換装置及びその作製方法
CN103765769B (zh) * 2011-09-01 2016-12-28 株式会社村田制作所 压电体波装置及其制造方法
US9054671B2 (en) 2011-11-09 2015-06-09 International Business Machines Corporation Tunable filter structures and design structures
US8723399B2 (en) * 2011-12-27 2014-05-13 Massachusetts Institute Of Technology Tunable ultrasound transducers
US9225311B2 (en) 2012-02-21 2015-12-29 International Business Machines Corporation Method of manufacturing switchable filters
US20130300571A1 (en) * 2012-04-18 2013-11-14 Farrokh Mohamadi Interrogation of active and passive proppants for real-time monitoring of fractured wells
US8902010B2 (en) * 2013-01-02 2014-12-02 Motorola Mobility Llc Microelectronic machine-based ariable
DE102013209804A1 (de) * 2013-05-27 2014-11-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrostatischer aktuator und verfahren zum herstellen desselben
DE102013209823B4 (de) * 2013-05-27 2015-10-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Struktur mit daran angeordneten Stegen und Verfahren zur Herstellung derselben
DE102013209814B4 (de) * 2013-05-27 2015-01-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Struktur mit daran angeordneten Stegen und Verfahren zur Herstellung derselben
SG10201407632UA (en) * 2013-11-26 2015-06-29 Agency Science Tech & Res Transducer and method for forming the same
JP6365690B2 (ja) 2015-01-13 2018-08-01 株式会社村田製作所 圧電デバイスの製造方法
US10656255B2 (en) 2016-05-04 2020-05-19 Invensense, Inc. Piezoelectric micromachined ultrasonic transducer (PMUT)
US10670716B2 (en) 2016-05-04 2020-06-02 Invensense, Inc. Operating a two-dimensional array of ultrasonic transducers
US10445547B2 (en) 2016-05-04 2019-10-15 Invensense, Inc. Device mountable packaging of ultrasonic transducers
US10315222B2 (en) 2016-05-04 2019-06-11 Invensense, Inc. Two-dimensional array of CMOS control elements
US10325915B2 (en) 2016-05-04 2019-06-18 Invensense, Inc. Two-dimensional array of CMOS control elements
US10632500B2 (en) 2016-05-10 2020-04-28 Invensense, Inc. Ultrasonic transducer with a non-uniform membrane
US10452887B2 (en) 2016-05-10 2019-10-22 Invensense, Inc. Operating a fingerprint sensor comprised of ultrasonic transducers
US10408797B2 (en) 2016-05-10 2019-09-10 Invensense, Inc. Sensing device with a temperature sensor
US10441975B2 (en) 2016-05-10 2019-10-15 Invensense, Inc. Supplemental sensor modes and systems for ultrasonic transducers
US10706835B2 (en) 2016-05-10 2020-07-07 Invensense, Inc. Transmit beamforming of a two-dimensional array of ultrasonic transducers
US10539539B2 (en) 2016-05-10 2020-01-21 Invensense, Inc. Operation of an ultrasonic sensor
US10562070B2 (en) 2016-05-10 2020-02-18 Invensense, Inc. Receive operation of an ultrasonic sensor
US10600403B2 (en) 2016-05-10 2020-03-24 Invensense, Inc. Transmit operation of an ultrasonic sensor
US11673165B2 (en) 2016-05-10 2023-06-13 Invensense, Inc. Ultrasonic transducer operable in a surface acoustic wave (SAW) mode
CN106449960B (zh) * 2016-07-01 2018-12-25 中国计量大学 一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法
JP6618938B2 (ja) * 2017-02-10 2019-12-11 株式会社東芝 トランスデューサおよびトランスデューサアレイ
US10891461B2 (en) 2017-05-22 2021-01-12 Invensense, Inc. Live fingerprint detection utilizing an integrated ultrasound and infrared sensor
US10474862B2 (en) 2017-06-01 2019-11-12 Invensense, Inc. Image generation in an electronic device using ultrasonic transducers
US10643052B2 (en) 2017-06-28 2020-05-05 Invensense, Inc. Image generation in an electronic device using ultrasonic transducers
US10984209B2 (en) 2017-12-01 2021-04-20 Invensense, Inc. Darkfield modeling
US10936841B2 (en) 2017-12-01 2021-03-02 Invensense, Inc. Darkfield tracking
US10997388B2 (en) 2017-12-01 2021-05-04 Invensense, Inc. Darkfield contamination detection
US11151355B2 (en) 2018-01-24 2021-10-19 Invensense, Inc. Generation of an estimated fingerprint
US10901021B2 (en) 2018-02-27 2021-01-26 Applied Materials, Inc. Method for detecting wafer processing parameters with micro resonator array sensors
US10755067B2 (en) 2018-03-22 2020-08-25 Invensense, Inc. Operating a fingerprint sensor comprised of ultrasonic transducers
US10936843B2 (en) 2018-12-28 2021-03-02 Invensense, Inc. Segmented image acquisition
US11188735B2 (en) 2019-06-24 2021-11-30 Invensense, Inc. Fake finger detection using ridge features
WO2020264046A1 (fr) 2019-06-25 2020-12-30 Invensense, Inc. Détection de faux doigt basée sur des caractéristiques transitoires
US11176345B2 (en) 2019-07-17 2021-11-16 Invensense, Inc. Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness
US11216632B2 (en) 2019-07-17 2022-01-04 Invensense, Inc. Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness
WO2021033030A1 (fr) * 2019-08-21 2021-02-25 Vermon Sa Dispositif à ultrasons accordable en fréquence
US11232549B2 (en) 2019-08-23 2022-01-25 Invensense, Inc. Adapting a quality threshold for a fingerprint image
US11392789B2 (en) 2019-10-21 2022-07-19 Invensense, Inc. Fingerprint authentication using a synthetic enrollment image
IT201900023943A1 (it) * 2019-12-13 2021-06-13 St Microelectronics Srl Trasduttore mut comprendente un risuonatore di helmoltz accordabile
WO2021183457A1 (fr) 2020-03-09 2021-09-16 Invensense, Inc. Capteur d'empreintes digitales à ultrasons doté d'une couche de contact d'épaisseur non uniforme
US11243300B2 (en) 2020-03-10 2022-02-08 Invensense, Inc. Operating a fingerprint sensor comprised of ultrasonic transducers and a presence sensor
US11328165B2 (en) 2020-04-24 2022-05-10 Invensense, Inc. Pressure-based activation of fingerprint spoof detection
US11995909B2 (en) 2020-07-17 2024-05-28 Tdk Corporation Multipath reflection correction
CN113714071B (zh) * 2021-08-10 2022-05-24 中北大学 高灵敏度微压检测倒置台形空腔结构电容式微机械超声换能器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187116A (ja) * 1984-03-07 1985-09-24 Matsushita Electric Ind Co Ltd 薄膜振動共振子の共振周波数調整方法
JPS6382116A (ja) * 1986-09-26 1988-04-12 Matsushita Electric Ind Co Ltd 圧電薄膜共振子およびその製造方法
JPS63187713A (ja) * 1987-01-29 1988-08-03 Toshiba Corp 集積型圧電薄膜機能素子
US5446306A (en) * 1993-12-13 1995-08-29 Trw Inc. Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)
JPH07226648A (ja) * 1994-02-15 1995-08-22 Murata Mfg Co Ltd 共振周波数可変型共振子
JPH11284481A (ja) * 1998-03-30 1999-10-15 Murata Mfg Co Ltd 圧電薄膜振動子およびその製造方法
FI108583B (fi) 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
US6359374B1 (en) * 1999-11-23 2002-03-19 Mcnc Miniature electrical relays using a piezoelectric thin film as an actuating element
JP2001156350A (ja) * 1999-11-25 2001-06-08 Matsushita Electric Works Ltd 半導体マイクロアクチュエータ
DE10013424A1 (de) * 2000-03-17 2001-09-20 Bosch Gmbh Robert Filter für elektrische Signale
JP2002016477A (ja) * 2000-06-30 2002-01-18 Kyocera Corp 弾性表面波装置
US6936954B2 (en) * 2001-08-29 2005-08-30 Honeywell International Inc. Bulk resonator
US7038355B2 (en) * 2003-04-03 2006-05-02 Stmicroelectronics Sa Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients
FR2857785B1 (fr) * 2003-07-17 2005-10-21 Commissariat Energie Atomique Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
JP4408266B2 (ja) * 2004-04-22 2010-02-03 日本碍子株式会社 マイクロスイッチ及びその製造方法

Also Published As

Publication number Publication date
WO2003069776A2 (fr) 2003-08-21
FR2835981A1 (fr) 2003-08-15
EP1474866B1 (fr) 2012-08-29
US20050162040A1 (en) 2005-07-28
FR2835981B1 (fr) 2005-04-29
JP2005528010A (ja) 2005-09-15
WO2003069776A3 (fr) 2004-04-08
EP1474866A2 (fr) 2004-11-10
US7592739B2 (en) 2009-09-22

Similar Documents

Publication Publication Date Title
JP4521537B2 (ja) 同調可能なmemsフィルムバルク音響波マイクロ共振器
JP4429918B2 (ja) Mems圧電共振器
US7804382B2 (en) Tunable resonator using film bulk acoustic resonator (FBAR)
JP4087790B2 (ja) 極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造
US8446078B2 (en) Mechanical resonating structures and methods
US7522019B2 (en) Internal electrostatic transduction structures for bulk-mode micromechanical resonators
JP4645227B2 (ja) 振動子構造体及びその製造方法
US11158783B2 (en) Piezoelectric cross-sectional Lamé mode transformer
JP2018506930A5 (fr)
JP2008504771A (ja) 変形量が大きな複合型微小共振器
CN110024284B (zh) 角耦接谐振器阵列
KR20120029465A (ko) 2개의 압전층을 구비한 압전 공진기
US20120139665A1 (en) Wide bandwidth slanted-finger contour-mode piezoelectric devices
CN111600564B (zh) 基于γ-石墨二炔的可调频纳机电谐振器
Gong et al. An 880 MHz ladder filter formed by arrays of laterally vibrating thin film Lithium Niobate resonators
US9837975B2 (en) Temperature drift compensation of MEMS resonators
US9954513B1 (en) Methods and apparatus for anchoring resonators
US9246472B2 (en) Volume wave resonator using excitation/detection of vibrations
US6897744B2 (en) Longitudinally-coupled multi-mode piezoelectric bulk wave filter and electronic component
JP5064155B2 (ja) 発振器
JP2004276200A (ja) マイクロ構造体およびその製造方法
KR102142056B1 (ko) 가변 공진 특성을 갖는 체적탄성파 공진기 및 그 방법
JP2009118331A (ja) 電気機械フィルタ
JP4995675B2 (ja) 振動子デバイス及び発振器
Zadehsafari et al. A piezoelectric lamb-wave disk-shape MEMS resonator for RF applications

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051214

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081003

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081014

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090114

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090728

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091028

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100323

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100422

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4521537

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130604

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term