JP4087790B2 - 極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造 - Google Patents
極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造 Download PDFInfo
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- JP4087790B2 JP4087790B2 JP2003531608A JP2003531608A JP4087790B2 JP 4087790 B2 JP4087790 B2 JP 4087790B2 JP 2003531608 A JP2003531608 A JP 2003531608A JP 2003531608 A JP2003531608 A JP 2003531608A JP 4087790 B2 JP4087790 B2 JP 4087790B2
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- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 1
- 238000004891 communication Methods 0.000 description 6
- 230000002411 adverse Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000010267 cellular communication Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
- H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/019—Suspended structures, i.e. structures allowing a movement characterized by their profile
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Claims (24)
- マイクロ電子機械の共振器であって、
基板と、
複数の支持部と、前記複数の支持部の間に形成されるビームとを有し、前記基板に接続されるマイクロブリッジ・ビーム構造と、
前記ビームの振動を引き起こすために、前記マイクロブリッジ・ビーム構造に隣接して配置される少なくとも1つの電極と
を備え、
前記ビームの中心領域が、前記複数の支持部に隣接する複数の領域より狭く、
前記中心領域の質量を低減させ、かつ前記複数の支持部に隣接する複数の前記領域の質量を増加させた
共振器。 - 前記中心質量の減少したビームが、前記ビームが長方形の構造に形成された場合と比べて、より高いスチフネス対質量比を有する、請求項1に記載の共振器。
- 前記中心質量の減少したビームが、前記ビームが長方形の構造に形成された場合と比べて、より高い共振周波数を供する、請求項1に記載の共振器。
- 前記ビームの前記中心領域が、前記中心領域に形成される少なくとも1つのスロットを備える、請求項1に記載の共振器。
- 前記ビームの前記中心領域が、エッチングされた少なくとも1つの穴を前記中心領域に備える、請求項1に記載の共振器。
- 前記ビームの垂直の振動を引き起こすために、前記少なくとも1つの電極が前記ビームの真下に配置される、請求項1に記載の共振器。
- 前記ビームの垂直の振動を引き起こすために、前記少なくとも1つの電極が前記ビームに隣接して配置される1対の電極を備え、
前記ビームと前記複数の電極が、一定のギャップが各電極と前記ビームとの間で形成されるように配置される、
請求項1に記載の共振器。 - マイクロブリッジ・ビームのスチフネス対質量比を増加させることによって、基板上の少なくとも1つの支持部に接続される共振する前記マイクロブリッジ・ビームの共振周波数を増加させるステップを備え、
前記マイクロブリッジ・ビームの前記スチフネス対質量比を増加させるステップが、
前記ビームの中心領域を前記複数の支持部に隣接する複数の領域より狭くし、
前記中心領域の質量を低減させ、かつ前記複数の支持部に隣接する複数の前記領域の質量を増加させるステップを有する、
方法。 - 前記マイクロブリッジ・ビームの前記スチフネス対質量比を増加させるステップが、前記マイクロブリッジ・ビームの有効ばね定数を増加させるステップを備える、請求項8に記載の方法。
- 前記マイクロブリッジ・ビームの前記スチフネス対質量比を増加させるステップが、前記マイクロブリッジ・ビームの中心領域に少なくとも1つのスロットを形成するステップを備える、請求項8に記載の方法。
- 前記マイクロブリッジ・ビームの前記スチフネス対質量比を増加させるステップが、前記マイクロブリッジ・ビームの中心領域において少なくとも1つの穴をエッチングするステップを備える、請求項8に記載の方法。
- 少なくとも1つの支持構造物と、
前記少なくとも1つの支持構造物に接続され、前記支持構造物を設置する基板に対して一軸方向に可動であるマイクロブリッジ・ビームと
を備え、
長方形の構造に形成された場合よりも高いスチフネス対質量比を有する、中心質量の減少したビームを形成するために、前記ビームの中心領域が、前記支持構造物に隣接する領 域より狭く、前記中心領域の質量を低減させ、かつ、前記複数の支持構造物に隣接する前記領域の質量を増加させた
装置。 - 前記中心質量の減少したビームが、前記ビームが長方形の構造に形成された場合よりも高い共振周波数を供する、請求項12に記載の装置。
- 前記ビームが、前記少なくとも1つの支持構造物と統合して形成される、請求項12に記載の装置。
- 前記ビームの前記中心領域が、前記中心領域に形成される少なくとも1つのスロットを備える、請求項12に記載の装置。
- 前記ビームの前記中心領域が、エッチングされた少なくとも1つの穴を前記中心領域に備える、請求項12に記載の装置。
- 前記ビームが、前記基板に対して垂直に移動するように形成される、請求項12に記載の装置。
- 前記ビームが、前記基板に対して水平に移動するように形成される、請求項12に記載の装置。
- 前記マイクロブリッジ・ビーム構造は、多結晶シリコンから製作される、請求項1に記載の共振器。
- 前記ビームの長さが3ミクロンより短い、請求項1に記載の共振器。
- 前記複数の支持部は、前記基板に固着され、
前記ビームは、前記複数の支持部の間に、前記少なくとも1つの電極との間にギャップを設けて配置される、請求項1に記載の共振器。 - 前記マイクロブリッジ・ビーム構造は、前記マイクロブリッジ・ビーム構造の材料が犠牲材料上に形成され、前記犠牲材料が除去されることにより形成される、請求項1に記載の共振器。
- 前記ビームの前記中心領域が、少なくとも1つの穴を前記中心領域に備える、請求項1に記載の共振器。
- 前記ビームの前記中心領域に、前記ビームの長手方向のスロットが形成されている、請求項1に記載の共振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/967,732 US6630871B2 (en) | 2001-09-28 | 2001-09-28 | Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator |
PCT/US2002/031157 WO2003028212A2 (en) | 2001-09-28 | 2002-09-27 | Microbridge structures for ultra-high frequency mem resonator |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005533400A JP2005533400A (ja) | 2005-11-04 |
JP4087790B2 true JP4087790B2 (ja) | 2008-05-21 |
Family
ID=25513230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003531608A Expired - Fee Related JP4087790B2 (ja) | 2001-09-28 | 2002-09-27 | 極超短波mem共振器のための中心質量の減少したマイクロブリッジ構造 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6630871B2 (ja) |
EP (1) | EP1430599A2 (ja) |
JP (1) | JP4087790B2 (ja) |
KR (1) | KR100669582B1 (ja) |
CN (1) | CN100525090C (ja) |
AU (1) | AU2002331995A1 (ja) |
MY (1) | MY122782A (ja) |
TW (1) | TWI225034B (ja) |
WO (1) | WO2003028212A2 (ja) |
Families Citing this family (32)
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JP4429918B2 (ja) * | 2002-08-06 | 2010-03-10 | チャールズ スターク ドレイパー ラボラトリー インコーポレイテッド | Mems圧電共振器 |
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US6870444B1 (en) * | 2003-08-28 | 2005-03-22 | Motorola, Inc. | Electromechanical resonator and method of operating same |
US20050073078A1 (en) | 2003-10-03 | 2005-04-07 | Markus Lutz | Frequency compensated oscillator design for process tolerances |
US7068125B2 (en) * | 2004-03-04 | 2006-06-27 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
US7511870B2 (en) * | 2004-10-18 | 2009-03-31 | Georgia Tech Research Corp. | Highly tunable low-impedance capacitive micromechanical resonators, oscillators, and processes relating thereto |
US7205867B2 (en) * | 2005-05-19 | 2007-04-17 | Robert Bosch Gmbh | Microelectromechanical resonator structure, and method of designing, operating and using same |
US7227432B2 (en) * | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
US7843283B2 (en) * | 2005-11-09 | 2010-11-30 | Cornell Research Foundation, Inc. | MEMS controlled oscillator |
US7859365B2 (en) * | 2006-12-13 | 2010-12-28 | Georgia Tech Research Corporation | Low frequency process-variation-insensitive temperature-stable micromechanical resonators |
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US8410868B2 (en) | 2009-06-04 | 2013-04-02 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
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-
2001
- 2001-09-28 US US09/967,732 patent/US6630871B2/en not_active Expired - Fee Related
-
2002
- 2002-09-25 MY MYPI20023556A patent/MY122782A/en unknown
- 2002-09-26 TW TW091122150A patent/TWI225034B/zh not_active IP Right Cessation
- 2002-09-27 CN CNB028192419A patent/CN100525090C/zh not_active Expired - Fee Related
- 2002-09-27 AU AU2002331995A patent/AU2002331995A1/en not_active Abandoned
- 2002-09-27 KR KR1020047004457A patent/KR100669582B1/ko not_active IP Right Cessation
- 2002-09-27 WO PCT/US2002/031157 patent/WO2003028212A2/en active Application Filing
- 2002-09-27 EP EP02768929A patent/EP1430599A2/en not_active Withdrawn
- 2002-09-27 JP JP2003531608A patent/JP4087790B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100525090C (zh) | 2009-08-05 |
AU2002331995A1 (en) | 2003-04-07 |
CN1613180A (zh) | 2005-05-04 |
KR20040041626A (ko) | 2004-05-17 |
WO2003028212A3 (en) | 2003-05-15 |
US6630871B2 (en) | 2003-10-07 |
US20030062961A1 (en) | 2003-04-03 |
TWI225034B (en) | 2004-12-11 |
EP1430599A2 (en) | 2004-06-23 |
KR100669582B1 (ko) | 2007-01-15 |
MY122782A (en) | 2006-05-31 |
JP2005533400A (ja) | 2005-11-04 |
WO2003028212A2 (en) | 2003-04-03 |
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