JP4515459B2 - デュアルバンク書き込み時読み出しフラッシュを操作する方法及びシステム - Google Patents

デュアルバンク書き込み時読み出しフラッシュを操作する方法及びシステム Download PDF

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Publication number
JP4515459B2
JP4515459B2 JP2006541298A JP2006541298A JP4515459B2 JP 4515459 B2 JP4515459 B2 JP 4515459B2 JP 2006541298 A JP2006541298 A JP 2006541298A JP 2006541298 A JP2006541298 A JP 2006541298A JP 4515459 B2 JP4515459 B2 JP 4515459B2
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JP
Japan
Prior art keywords
bank
data
code
flash
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006541298A
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English (en)
Japanese (ja)
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JP2007511850A5 (enExample
JP2007511850A (ja
Inventor
スコット、クリフトン・イー．
ガッティ、ジョン
ラクスミ、ラヤプディ
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Qualcomm Inc
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Qualcomm Inc
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Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2007511850A publication Critical patent/JP2007511850A/ja
Publication of JP2007511850A5 publication Critical patent/JP2007511850A5/ja
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Publication of JP4515459B2 publication Critical patent/JP4515459B2/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Mobile Radio Communication Systems (AREA)
JP2006541298A 2003-11-19 2004-11-15 デュアルバンク書き込み時読み出しフラッシュを操作する方法及びシステム Expired - Fee Related JP4515459B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/718,279 US7210002B2 (en) 2003-11-19 2003-11-19 System and method for operating dual bank read-while-write flash
PCT/US2004/038188 WO2005052799A2 (en) 2003-11-19 2004-11-15 System and method for operating dual bank read-while-write flash

Publications (3)

Publication Number Publication Date
JP2007511850A JP2007511850A (ja) 2007-05-10
JP2007511850A5 JP2007511850A5 (enExample) 2008-02-14
JP4515459B2 true JP4515459B2 (ja) 2010-07-28

Family

ID=34574660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006541298A Expired - Fee Related JP4515459B2 (ja) 2003-11-19 2004-11-15 デュアルバンク書き込み時読み出しフラッシュを操作する方法及びシステム

Country Status (7)

Country Link
US (1) US7210002B2 (enExample)
EP (1) EP1687723A2 (enExample)
JP (1) JP4515459B2 (enExample)
KR (1) KR100841585B1 (enExample)
CN (1) CN1882922A (enExample)
CA (1) CA2545451C (enExample)
WO (1) WO2005052799A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7257023B2 (en) * 2005-08-10 2007-08-14 Taiwan Semiconductor Manufacturing Co. Hybrid non-volatile memory device
CN1963787A (zh) * 2005-11-10 2007-05-16 其乐达科技股份有限公司 嵌入式系统的快闪存储器存取方法及存取电路
KR100842577B1 (ko) 2006-11-07 2008-07-01 삼성전자주식회사 소프트웨어 다운로드 기능을 갖춘 임베디드 시스템과 그운용 방법
US20090199014A1 (en) * 2008-02-04 2009-08-06 Honeywell International Inc. System and method for securing and executing a flash routine
US8392762B2 (en) * 2008-02-04 2013-03-05 Honeywell International Inc. System and method for detection and prevention of flash corruption
WO2009105362A1 (en) * 2008-02-19 2009-08-27 Rambus Inc. Multi-bank flash memory architecture with assignable resources
US20130268780A1 (en) * 2012-04-10 2013-10-10 John Wong Portable access and power supply apparatus

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
JPH07261997A (ja) * 1994-03-22 1995-10-13 Fanuc Ltd フラッシュｒｏｍ管理方式
GB9601900D0 (en) 1996-01-31 1996-04-03 Neopost Ltd Electronic apparatus including a memory device and method of reprogramming the memory device
US6493788B1 (en) * 1996-10-28 2002-12-10 Macronix International Co., Ltd. Processor with embedded in-circuit programming structures
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
US6275894B1 (en) * 1998-09-23 2001-08-14 Advanced Micro Devices, Inc. Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture
US6401160B1 (en) * 1999-03-31 2002-06-04 Intel Corporation Method and apparatus to permit adjustable code/data boundary in a nonvolatile memory
US6324628B1 (en) * 1999-08-24 2001-11-27 Trimble Navigation Limited Programming flash in a closed system
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
GB2371887A (en) 2001-01-31 2002-08-07 Nokia Mobile Phones Ltd Client-server system for games playing
JP3574078B2 (ja) * 2001-03-16 2004-10-06 東京エレクトロンデバイス株式会社 記憶装置と記憶装置制御方法
TW583582B (en) * 2001-05-11 2004-04-11 Benq Corp Microcomputer and associated method for reducing memory usage of the microcomputer
US6614685B2 (en) * 2001-08-09 2003-09-02 Multi Level Memory Technology Flash memory array partitioning architectures
ITRM20010524A1 (it) * 2001-08-30 2003-02-28 Micron Technology Inc Struttura a schiera di memoria flash.
EP1345236B1 (en) 2002-03-14 2011-05-11 STMicroelectronics Srl A non-volatile memory device
JP2003303132A (ja) * 2002-04-08 2003-10-24 Matsushita Electric Ind Co Ltd 半導体メモリ制御装置
US7526598B2 (en) * 2003-03-03 2009-04-28 Sandisk Il, Ltd. Efficient flash memory device driver
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device

Also Published As

Publication number Publication date
US7210002B2 (en) 2007-04-24
WO2005052799A3 (en) 2006-05-26
EP1687723A2 (en) 2006-08-09
KR20060092273A (ko) 2006-08-22
US20050108467A1 (en) 2005-05-19
CA2545451C (en) 2010-11-09
CA2545451A1 (en) 2005-06-09
KR100841585B1 (ko) 2008-06-26
WO2005052799A2 (en) 2005-06-09
JP2007511850A (ja) 2007-05-10
CN1882922A (zh) 2006-12-20

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