CN1882922A - 用于操作双区同时读写闪存的系统和方法 - Google Patents

用于操作双区同时读写闪存的系统和方法 Download PDF

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Publication number
CN1882922A
CN1882922A CNA200480034102XA CN200480034102A CN1882922A CN 1882922 A CN1882922 A CN 1882922A CN A200480034102X A CNA200480034102X A CN A200480034102XA CN 200480034102 A CN200480034102 A CN 200480034102A CN 1882922 A CN1882922 A CN 1882922A
Authority
CN
China
Prior art keywords
flash
code
data
flash drive
wireless communication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200480034102XA
Other languages
English (en)
Chinese (zh)
Inventor
克利夫顿·E·斯科特
约翰·加蒂
拉亚普迪·拉克希米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN1882922A publication Critical patent/CN1882922A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Mobile Radio Communication Systems (AREA)
CNA200480034102XA 2003-11-19 2004-11-15 用于操作双区同时读写闪存的系统和方法 Pending CN1882922A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/718,279 US7210002B2 (en) 2003-11-19 2003-11-19 System and method for operating dual bank read-while-write flash
US10/718,279 2003-11-19

Publications (1)

Publication Number Publication Date
CN1882922A true CN1882922A (zh) 2006-12-20

Family

ID=34574660

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200480034102XA Pending CN1882922A (zh) 2003-11-19 2004-11-15 用于操作双区同时读写闪存的系统和方法

Country Status (7)

Country Link
US (1) US7210002B2 (enExample)
EP (1) EP1687723A2 (enExample)
JP (1) JP4515459B2 (enExample)
KR (1) KR100841585B1 (enExample)
CN (1) CN1882922A (enExample)
CA (1) CA2545451C (enExample)
WO (1) WO2005052799A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7257023B2 (en) * 2005-08-10 2007-08-14 Taiwan Semiconductor Manufacturing Co. Hybrid non-volatile memory device
CN1963787A (zh) * 2005-11-10 2007-05-16 其乐达科技股份有限公司 嵌入式系统的快闪存储器存取方法及存取电路
KR100842577B1 (ko) 2006-11-07 2008-07-01 삼성전자주식회사 소프트웨어 다운로드 기능을 갖춘 임베디드 시스템과 그운용 방법
US20090199014A1 (en) * 2008-02-04 2009-08-06 Honeywell International Inc. System and method for securing and executing a flash routine
US8392762B2 (en) * 2008-02-04 2013-03-05 Honeywell International Inc. System and method for detection and prevention of flash corruption
US20110060868A1 (en) * 2008-02-19 2011-03-10 Rambus Inc. Multi-bank flash memory architecture with assignable resources
US20130268780A1 (en) * 2012-04-10 2013-10-10 John Wong Portable access and power supply apparatus

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
JPH07261997A (ja) * 1994-03-22 1995-10-13 Fanuc Ltd フラッシュｒｏｍ管理方式
GB9601900D0 (en) 1996-01-31 1996-04-03 Neopost Ltd Electronic apparatus including a memory device and method of reprogramming the memory device
US6493788B1 (en) * 1996-10-28 2002-12-10 Macronix International Co., Ltd. Processor with embedded in-circuit programming structures
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
US6275894B1 (en) * 1998-09-23 2001-08-14 Advanced Micro Devices, Inc. Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture
US6401160B1 (en) * 1999-03-31 2002-06-04 Intel Corporation Method and apparatus to permit adjustable code/data boundary in a nonvolatile memory
US6324628B1 (en) * 1999-08-24 2001-11-27 Trimble Navigation Limited Programming flash in a closed system
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
GB2371887A (en) 2001-01-31 2002-08-07 Nokia Mobile Phones Ltd Client-server system for games playing
JP3574078B2 (ja) * 2001-03-16 2004-10-06 東京エレクトロンデバイス株式会社 記憶装置と記憶装置制御方法
TW583582B (en) * 2001-05-11 2004-04-11 Benq Corp Microcomputer and associated method for reducing memory usage of the microcomputer
US6614685B2 (en) * 2001-08-09 2003-09-02 Multi Level Memory Technology Flash memory array partitioning architectures
ITRM20010524A1 (it) * 2001-08-30 2003-02-28 Micron Technology Inc Struttura a schiera di memoria flash.
EP1345236B1 (en) 2002-03-14 2011-05-11 STMicroelectronics Srl A non-volatile memory device
JP2003303132A (ja) * 2002-04-08 2003-10-24 Matsushita Electric Ind Co Ltd 半導体メモリ制御装置
US7526598B2 (en) * 2003-03-03 2009-04-28 Sandisk Il, Ltd. Efficient flash memory device driver
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device

Also Published As

Publication number Publication date
CA2545451A1 (en) 2005-06-09
US20050108467A1 (en) 2005-05-19
KR100841585B1 (ko) 2008-06-26
WO2005052799A2 (en) 2005-06-09
JP2007511850A (ja) 2007-05-10
EP1687723A2 (en) 2006-08-09
CA2545451C (en) 2010-11-09
KR20060092273A (ko) 2006-08-22
US7210002B2 (en) 2007-04-24
WO2005052799A3 (en) 2006-05-26
JP4515459B2 (ja) 2010-07-28

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