JP4515349B2 - 電気光学装置 - Google Patents

電気光学装置 Download PDF

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Publication number
JP4515349B2
JP4515349B2 JP2005222648A JP2005222648A JP4515349B2 JP 4515349 B2 JP4515349 B2 JP 4515349B2 JP 2005222648 A JP2005222648 A JP 2005222648A JP 2005222648 A JP2005222648 A JP 2005222648A JP 4515349 B2 JP4515349 B2 JP 4515349B2
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Japan
Prior art keywords
film
tft
layer
electrode
gate
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Expired - Fee Related
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JP2005222648A
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English (en)
Japanese (ja)
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JP2006032977A (ja
JP2006032977A5 (enExample
Inventor
舜平 山崎
潤 小山
一宇 山本
利光 小沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005222648A priority Critical patent/JP4515349B2/ja
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Publication of JP2006032977A5 publication Critical patent/JP2006032977A5/ja
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Publication of JP4515349B2 publication Critical patent/JP4515349B2/ja
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2005222648A 1999-06-04 2005-08-01 電気光学装置 Expired - Fee Related JP4515349B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005222648A JP4515349B2 (ja) 1999-06-04 2005-08-01 電気光学装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15881399 1999-06-04
JP2005222648A JP4515349B2 (ja) 1999-06-04 2005-08-01 電気光学装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000166763A Division JP2001052864A (ja) 1999-06-04 2000-06-02 電気光学装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006032977A JP2006032977A (ja) 2006-02-02
JP2006032977A5 JP2006032977A5 (enExample) 2007-07-05
JP4515349B2 true JP4515349B2 (ja) 2010-07-28

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ID=35898864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005222648A Expired - Fee Related JP4515349B2 (ja) 1999-06-04 2005-08-01 電気光学装置

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JP (1) JP4515349B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4802896B2 (ja) * 2005-09-09 2011-10-26 セイコーエプソン株式会社 電気光学装置の製造方法
KR101108158B1 (ko) * 2009-11-30 2012-01-31 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 그 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62180988A (ja) * 1986-02-04 1987-08-08 オリンパス光学工業株式会社 薄膜ｅｌ素子
JPH01186589A (ja) * 1988-01-13 1989-07-26 Nippon Sheet Glass Co Ltd エレクトロルミネッセンス素子
JPH02265194A (ja) * 1989-04-04 1990-10-29 Ricoh Co Ltd カラー薄膜ｅｌパネル
JP3201029B2 (ja) * 1992-12-04 2001-08-20 富士ゼロックス株式会社 薄膜トランジスタ
JPH06310279A (ja) * 1993-04-27 1994-11-04 Tonen Chem Corp エレクトロルミネセンスランプ
JP3253589B2 (ja) * 1995-08-11 2002-02-04 シャープ株式会社 液晶表示装置
JP3383535B2 (ja) * 1995-12-14 2003-03-04 株式会社半導体エネルギー研究所 半導体装置
JP3188167B2 (ja) * 1995-12-15 2001-07-16 三洋電機株式会社 薄膜トランジスタ
JPH1020342A (ja) * 1996-07-09 1998-01-23 Toshiba Corp アクティブマトリクス基板の製造方法
CN1173315C (zh) * 1996-09-19 2004-10-27 精工爱普生株式会社 矩阵式显示元件及其制造方法
JP3392672B2 (ja) * 1996-11-29 2003-03-31 三洋電機株式会社 表示装置
JPH10172762A (ja) * 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
JPH10253989A (ja) * 1997-03-12 1998-09-25 Toshiba Corp 表示装置
JP3524711B2 (ja) * 1997-03-18 2004-05-10 三洋電機株式会社 有機エレクトロルミネッセンス素子及びその製造方法
JPH10268360A (ja) * 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
WO1999010862A1 (en) * 1997-08-21 1999-03-04 Seiko Epson Corporation Active matrix display
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JP3753845B2 (ja) * 1997-09-10 2006-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3374717B2 (ja) * 1997-09-11 2003-02-10 セイコーエプソン株式会社 液晶表示パネルの製造方法
JP4070271B2 (ja) * 1997-09-16 2008-04-02 三井化学株式会社 有機電界発光素子
JPH1195687A (ja) * 1997-09-20 1999-04-09 Semiconductor Energy Lab Co Ltd 表示装置

Also Published As

Publication number Publication date
JP2006032977A (ja) 2006-02-02

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