JP4515136B2 - レーザビーム照射装置、薄膜トランジスタの作製方法 - Google Patents

レーザビーム照射装置、薄膜トランジスタの作製方法 Download PDF

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JP4515136B2
JP4515136B2 JP2004123375A JP2004123375A JP4515136B2 JP 4515136 B2 JP4515136 B2 JP 4515136B2 JP 2004123375 A JP2004123375 A JP 2004123375A JP 2004123375 A JP2004123375 A JP 2004123375A JP 4515136 B2 JP4515136 B2 JP 4515136B2
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laser
laser beam
mirror
semiconductor film
irradiation
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JP2004343091A5 (enExample
JP2004343091A (ja
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004123375A 2003-04-21 2004-04-19 レーザビーム照射装置、薄膜トランジスタの作製方法 Expired - Fee Related JP4515136B2 (ja)

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JP2004123375A JP4515136B2 (ja) 2003-04-21 2004-04-19 レーザビーム照射装置、薄膜トランジスタの作製方法

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JP2003116408 2003-04-21
JP2004123375A JP4515136B2 (ja) 2003-04-21 2004-04-19 レーザビーム照射装置、薄膜トランジスタの作製方法

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JP2004343091A JP2004343091A (ja) 2004-12-02
JP2004343091A5 JP2004343091A5 (enExample) 2007-05-31
JP4515136B2 true JP4515136B2 (ja) 2010-07-28

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
FI20060177L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Menetelmä tuottaa hyvälaatuisia pintoja ja hyvälaatuisen pinnan omaava tuote
WO2007096476A2 (en) * 2006-02-23 2007-08-30 Picodeon Ltd Oy Coating on a medical substrate and a coated medical product
FI20060178L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Pinnoitusmenetelmä
EP1993776A2 (en) * 2006-02-23 2008-11-26 Picodeon Ltd OY Coating on a plastic substrate and a coated plastic product
US8553311B2 (en) * 2010-04-02 2013-10-08 Electro Scientific Industries, Inc. Method for accomplishing high-speed intensity variation of a polarized output laser beam
JP7660451B2 (ja) 2021-07-07 2025-04-11 川崎重工業株式会社 レーザ溶接方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032166A (ja) * 1996-07-16 1998-02-03 Toyota Motor Corp レーザーアブレーション法による結晶薄膜の形成方法
JPH11342485A (ja) * 1998-05-29 1999-12-14 Nec Corp レーザ加工機およびスルーホール・ブラインドビアホール用加工孔の形成方法
JP2002231628A (ja) * 2001-02-01 2002-08-16 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP5078205B2 (ja) * 2001-08-10 2012-11-21 株式会社半導体エネルギー研究所 レーザ照射装置

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