JP4499774B2 - 絶縁ゲイト型半導体装置 - Google Patents

絶縁ゲイト型半導体装置 Download PDF

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Publication number
JP4499774B2
JP4499774B2 JP2007275917A JP2007275917A JP4499774B2 JP 4499774 B2 JP4499774 B2 JP 4499774B2 JP 2007275917 A JP2007275917 A JP 2007275917A JP 2007275917 A JP2007275917 A JP 2007275917A JP 4499774 B2 JP4499774 B2 JP 4499774B2
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Japan
Prior art keywords
region
channel
impurity
channel formation
drain
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Expired - Fee Related
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JP2007275917A
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English (en)
Japanese (ja)
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JP2008103737A5 (https=
JP2008103737A (ja
Inventor
舜平 山崎
久 大谷
潤 小山
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007275917A priority Critical patent/JP4499774B2/ja
Publication of JP2008103737A publication Critical patent/JP2008103737A/ja
Publication of JP2008103737A5 publication Critical patent/JP2008103737A5/ja
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Publication of JP4499774B2 publication Critical patent/JP4499774B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2007275917A 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置 Expired - Fee Related JP4499774B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP26921596A Division JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009164391A Division JP4515530B2 (ja) 2009-07-13 2009-07-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2008103737A JP2008103737A (ja) 2008-05-01
JP2008103737A5 JP2008103737A5 (https=) 2009-06-04
JP4499774B2 true JP4499774B2 (ja) 2010-07-07

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ID=39437765

Family Applications (1)

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JP2007275917A Expired - Fee Related JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

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JP (1) JP4499774B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
KR20140140648A (ko) 2005-05-12 2014-12-09 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101835300B1 (ko) * 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326014B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 薄膜半導体装置

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JP2008103737A (ja) 2008-05-01

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