JP2007227955A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007227955A JP2007227955A JP2007101563A JP2007101563A JP2007227955A JP 2007227955 A JP2007227955 A JP 2007227955A JP 2007101563 A JP2007101563 A JP 2007101563A JP 2007101563 A JP2007101563 A JP 2007101563A JP 2007227955 A JP2007227955 A JP 2007227955A
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- 239000010408 film Substances 0.000 description 154
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- 150000002500 ions Chemical class 0.000 description 129
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- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
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- 230000002829 reductive effect Effects 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- 230000003197 catalytic effect Effects 0.000 description 2
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- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
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- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
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- 238000005204 segregation Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
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- 229910052720 vanadium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
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- 239000000969 carrier Substances 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 238000009828 non-uniform distribution Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 238000005070 sampling Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Abstract
【解決手段】絶縁表面を有する基板上にPチャネル型TFTを有し、前記Pチャネル型TFTの活性層のゲイト電極と重なる領域に、P型を付与する不純物元素が添加された第1の領域を有し、前記Pチャネル型TFTの活性層は、前記第1の領域を囲むように設けられたN型の導電型の第2の領域を有する半導体装置を提供する。こうして、電流パスとなり易い箇所にエネルギー的に障壁の高い領域を形成してリーク電流の発生(ショートチャネルリーク)を防ぐことができる。
【選択図】図12
Description
m=[C]Si/[C]SiO2
本実施例8に従って作製した図3(D)に示されるTFTの電気特性(Id−Vg特性)は図16に示す様なものとなる。図16において、1601で示される曲線(実線)はNチャネル型TFTのId−Vg特性、1602で示される曲線(実線)はPチャネル型TFTのId−Vg特性を示している。また、1603で示される曲線(破線)は、本発明の構成を用いない場合のPチャネル型TFTのId−Vg特性である。なお、横軸はTFTのゲイト電圧(Vg)、縦軸はドレイン電流(Id)である。また、Id−Vg特性の測定はドレイン電圧Vd=1Vの時として調べた。
ところで、本出願人は本実施例に従って形成した結晶性珪素膜の室温(10〜30℃)におけるエネルギーバンドギャップ(Eg)の測定を行った。このEgの値は、結晶性珪素膜の光学吸収スペクトルを測定して珪素膜の実効透過率の光学波長依存性を求め、実効透過率が減少し始める吸収端における光波長の値を、E=hc/λで表される式を用いてエネルギー値に変換して算出される値で定義することとした。
102 酸化珪素膜
103 Nチャネル型TFTの活性層
104 Pチャネル型TFTの活性層
105 ゲイト絶縁膜
106、107 ゲイト電極
108 層間絶縁膜
109、110 ソース電極
111 ドレイン電極
112 保護膜
Claims (6)
- 絶縁表面を有する基板上にPチャネル型TFTを有し、
前記Pチャネル型TFTの活性層のゲイト電極と重なる領域に、P型を付与する不純物元素が添加された第1の領域を有し、
前記Pチャネル型TFTの活性層は、前記第1の領域を囲むように設けられたN型の導電型の第2の領域を有することを特徴とする半導体装置。 - 絶縁表面を有する基板上にPチャネル型TFTとNチャネル型TFTを有し、
前記Pチャネル型TFTの活性層のゲイト電極と重なる領域に、P型を付与する不純物元素が添加された第1の領域を有し、
前記Pチャネル型TFTの活性層は、前記第1の領域を囲むように設けられたN型の導電型の第2の領域を有し、
前記Nチャネル型TFTの活性層は、N型を付与する不純物元素が添加された第3の領域と、前記第3の領域を囲むように設けられたP型の導電型の第4の領域を有することを特徴とする半導体装置。 - 請求項1において、
前記Pチャネル型TFTの活性層の膜厚は10〜100nmであることを特徴とする半導体装置。 - 請求項2において、
前記Pチャネル型TFTの活性層及び前記Nチャネル型TFTの活性層の膜厚は10〜100nmであることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一に記載の半導体装置を用いた電気光学装置。
- 請求項1乃至請求項4のいずれか一に記載の半導体装置を用いた電気光学装置を有するカメラ、コンピュータ、ナビゲーションシステム又はテレビ。
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JP2007101563A JP4801619B2 (ja) | 1996-07-11 | 2007-04-09 | 半導体装置の作製方法 |
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Application Number | Priority Date | Filing Date | Title |
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JP20129496 | 1996-07-11 | ||
JP1996201294 | 1996-07-11 | ||
JP2007101563A JP4801619B2 (ja) | 1996-07-11 | 2007-04-09 | 半導体装置の作製方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19649897A Division JP4044176B2 (ja) | 1996-07-11 | 1997-07-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007227955A true JP2007227955A (ja) | 2007-09-06 |
JP4801619B2 JP4801619B2 (ja) | 2011-10-26 |
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JP2007101563A Expired - Fee Related JP4801619B2 (ja) | 1996-07-11 | 2007-04-09 | 半導体装置の作製方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63237571A (ja) * | 1987-03-26 | 1988-10-04 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPH06314785A (ja) * | 1993-03-05 | 1994-11-08 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
JPH07176753A (ja) * | 1993-12-17 | 1995-07-14 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
-
2007
- 2007-04-09 JP JP2007101563A patent/JP4801619B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63237571A (ja) * | 1987-03-26 | 1988-10-04 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPH06314785A (ja) * | 1993-03-05 | 1994-11-08 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
JPH07176753A (ja) * | 1993-12-17 | 1995-07-14 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
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