JP4499774B2 - 絶縁ゲイト型半導体装置 - Google Patents

絶縁ゲイト型半導体装置 Download PDF

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Publication number
JP4499774B2
JP4499774B2 JP2007275917A JP2007275917A JP4499774B2 JP 4499774 B2 JP4499774 B2 JP 4499774B2 JP 2007275917 A JP2007275917 A JP 2007275917A JP 2007275917 A JP2007275917 A JP 2007275917A JP 4499774 B2 JP4499774 B2 JP 4499774B2
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Japan
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region
channel
impurity
channel formation
drain
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JP2007275917A
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Japanese (ja)
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JP2008103737A (ja
JP2008103737A5 (enExample
Inventor
舜平 山崎
久 大谷
潤 小山
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007275917A priority Critical patent/JP4499774B2/ja
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Publication of JP2008103737A5 publication Critical patent/JP2008103737A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2007275917A 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置 Expired - Fee Related JP4499774B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP26921596A Division JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009164391A Division JP4515530B2 (ja) 2009-07-13 2009-07-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2008103737A JP2008103737A (ja) 2008-05-01
JP2008103737A5 JP2008103737A5 (enExample) 2009-06-04
JP4499774B2 true JP4499774B2 (ja) 2010-07-07

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ID=39437765

Family Applications (1)

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JP2007275917A Expired - Fee Related JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

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JP (1) JP4499774B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
KR101762083B1 (ko) 2005-05-12 2017-07-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326014B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 薄膜半導体装置

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Publication number Publication date
JP2008103737A (ja) 2008-05-01

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