JP4498716B2 - レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 - Google Patents

レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Download PDF

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Publication number
JP4498716B2
JP4498716B2 JP2003345276A JP2003345276A JP4498716B2 JP 4498716 B2 JP4498716 B2 JP 4498716B2 JP 2003345276 A JP2003345276 A JP 2003345276A JP 2003345276 A JP2003345276 A JP 2003345276A JP 4498716 B2 JP4498716 B2 JP 4498716B2
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laser
laser beam
lens
substrate
film
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JP2004146823A (ja
JP2004146823A5 (enrdf_load_stackoverflow
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Recrystallisation Techniques (AREA)
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JP2003345276A 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP4498716B2 (ja)

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JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

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JP2002291545 2002-10-03
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

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JP2004146823A JP2004146823A (ja) 2004-05-20
JP2004146823A5 JP2004146823A5 (enrdf_load_stackoverflow) 2006-11-16
JP4498716B2 true JP4498716B2 (ja) 2010-07-07

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1809598B (zh) 2003-06-26 2010-05-12 积水化学工业株式会社 涂膏用粘合树脂
CN101331592B (zh) * 2005-12-16 2010-06-16 株式会社半导体能源研究所 激光照射设备、激光照射方法和半导体装置的制造方法
JP5500573B2 (ja) * 2009-05-19 2014-05-21 株式会社日本製鋼所 半導体不純物の活性化方法
CN102290342B (zh) * 2011-09-05 2013-07-03 清华大学 一种采用六边形束斑的激光扫描退火方法
SG10201503482QA (en) * 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
CN104395033B (zh) 2012-07-04 2017-06-23 法国圣戈班玻璃厂 用于在使用至少两个桥情况下对大面积衬底进行激光处理的设备和方法
JP6665624B2 (ja) * 2015-03-27 2020-03-13 日本製鉄株式会社 試験装置およびそれを備えた電子顕微鏡
CN111863342B (zh) * 2019-04-28 2021-08-27 上海微电子装备（集团）股份有限公司 一种ito退火工艺
JPWO2021256434A1 (enrdf_load_stackoverflow) 2020-06-18 2021-12-23

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795538B2 (ja) * 1986-05-02 1995-10-11 旭硝子株式会社 レ−ザ−アニ−ル装置
JP2001326363A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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