JP4487369B2 - 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法 - Google Patents

固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法 Download PDF

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Publication number
JP4487369B2
JP4487369B2 JP2000068935A JP2000068935A JP4487369B2 JP 4487369 B2 JP4487369 B2 JP 4487369B2 JP 2000068935 A JP2000068935 A JP 2000068935A JP 2000068935 A JP2000068935 A JP 2000068935A JP 4487369 B2 JP4487369 B2 JP 4487369B2
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semiconductor region
transparent electrode
semiconductor layer
type
imaging device
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Japanese (ja)
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JP2001257337A5 (enExample
JP2001257337A (ja
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耕一 原田
孟史 松下
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Sony Corp
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Sony Corp
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  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2000068935A 2000-03-13 2000-03-13 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法 Expired - Fee Related JP4487369B2 (ja)

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JP2000068935A JP4487369B2 (ja) 2000-03-13 2000-03-13 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法

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JP2000068935A JP4487369B2 (ja) 2000-03-13 2000-03-13 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法

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JP2001257337A JP2001257337A (ja) 2001-09-21
JP2001257337A5 JP2001257337A5 (enExample) 2007-02-08
JP4487369B2 true JP4487369B2 (ja) 2010-06-23

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JP2000068935A Expired - Fee Related JP4487369B2 (ja) 2000-03-13 2000-03-13 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3684233B2 (ja) * 2002-05-14 2005-08-17 キヤノン株式会社 指紋入力装置及びその製造方法
JP4802520B2 (ja) * 2005-03-07 2011-10-26 ソニー株式会社 固体撮像装置及びその製造方法
US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
JP4751803B2 (ja) * 2006-09-20 2011-08-17 富士フイルム株式会社 裏面照射型撮像素子
US7781715B2 (en) 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP5347520B2 (ja) * 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
JP5715351B2 (ja) 2010-06-30 2015-05-07 キヤノン株式会社 半導体装置およびその製造方法、ならびに固体撮像装置
KR101745638B1 (ko) 2011-01-12 2017-06-09 삼성전자 주식회사 광대역 갭 물질층 기반의 포토 다이오드 소자, 및 그 포토 다이오드 소자를 포함하는, 후면 조명 씨모스 이미지 센서 및 태양 전지

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