JP4484536B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4484536B2 JP4484536B2 JP2004032630A JP2004032630A JP4484536B2 JP 4484536 B2 JP4484536 B2 JP 4484536B2 JP 2004032630 A JP2004032630 A JP 2004032630A JP 2004032630 A JP2004032630 A JP 2004032630A JP 4484536 B2 JP4484536 B2 JP 4484536B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- support substrate
- welding
- vent hole
- cap material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Led Device Packages (AREA)
Description
まず、半導体素子16を支持基板11に固着する。支持基板11に、例えばシリコーン樹脂、エポキシ樹脂、フッ素系樹脂等の低アウトガスダイアタッチ剤により半導体素子16を固着する。また、図示は省略するが、支持基板11にスポット溶接や半田付け等で枠材を固着し、枠材により機械的に半導体素子16を固定するものであってもよい。
11 支持基板
12 ケース材
13 パッド
14 キャップ材
15 金属細線
16 半導体素子
17 ゲッター
18 外部端子
19 充填剤
22 通気孔
27 ゲッター
51 支持基板
52 半導体素子
53 金属パッケージ
54 透過窓
55 排気用パイプ
w 溶接箇所
L 電子ビーム(レーザ)
Claims (3)
- 金属支持基板に固着した半導体素子を金属キャップ材で覆い、前記金属キャップ材と前
記金属支持基板を溶接し、前記金属キャップ材と前記金属支持基板よりなる密閉した空間
に前記半導体素子を配置する半導体装置の製造方法であって、
前記溶接箇所の一部に通気孔を設けた状態で前記溶接箇所を溶接し、
大気圧より低い圧力下で前記通気孔から溶接時に発生するガスを外部に導出し、
前記通気孔および前記通気孔の周囲に対応する前記金属キャップ材に、前記通気孔より
も広い径で電子ビームまたはレーザを照射し、前記通気孔の周囲から溶けた前記金属キャ
ップ材の金属を前記通気孔に供給して前記通気孔を埋める事を特徴とした半導体装置の製
造方法。 - 前記密閉した空間には、吸着材が設けられる請求項1に記載の半導体装置の製造方法。
- 前記キャップ材は、コバールから成り、前記半導体素子の上方に位置する前記キャップ
材には、ガラス材が設けられる請求項1または請求項2に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004032630A JP4484536B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004032630A JP4484536B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005223295A JP2005223295A (ja) | 2005-08-18 |
JP4484536B2 true JP4484536B2 (ja) | 2010-06-16 |
Family
ID=34998661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004032630A Expired - Fee Related JP4484536B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4484536B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343969B2 (ja) * | 2008-07-25 | 2013-11-13 | 日本電気株式会社 | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 |
JP2010177298A (ja) * | 2009-01-27 | 2010-08-12 | Panasonic Electric Works Co Ltd | 半導体装置およびその製造方法 |
WO2014045889A1 (ja) | 2012-09-18 | 2014-03-27 | ギガフォトン株式会社 | スラブ型増幅器、それを含むレーザ装置および極短紫外光生成装置 |
-
2004
- 2004-02-09 JP JP2004032630A patent/JP4484536B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005223295A (ja) | 2005-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5896649B2 (ja) | ターゲット構造体及びx線発生装置 | |
JP5128752B2 (ja) | 透過型x線管及びその製造方法 | |
WO2010095367A1 (ja) | 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法 | |
JPH11167887A (ja) | X線管 | |
CN1630020B (zh) | 气密封灯、气密封灯的制造方法以及发光系统 | |
KR100473000B1 (ko) | 전자관과 그 제조 방법 | |
JP4484536B2 (ja) | 半導体装置の製造方法 | |
JP2010170871A (ja) | 気密容器及び画像表示装置の製造方法 | |
JP2007048938A (ja) | 半導体レーザ | |
US5769678A (en) | Method of sealing vacuum ports in low pressure gas discharge lamps | |
US6015325A (en) | Method for manufacturing transmission type X-ray tube | |
JP2007509320A (ja) | 放射感知装置の集積されたパッケージ設計および方法 | |
JP2007509320A5 (ja) | ||
JP4567954B2 (ja) | 半導体装置およびその製造方法 | |
JP2006088088A (ja) | ガス吸着素子とこれを用いた赤外線センサ | |
JP2005223294A (ja) | 半導体装置およびその製造方法 | |
US7397185B2 (en) | Electron tube and a method for manufacturing same | |
JP3931888B2 (ja) | 真空パッケージの製造方法 | |
JP2003004524A (ja) | ガス吸着素子および赤外線センサ | |
US5497047A (en) | Fluorescent display device | |
JP2019140360A (ja) | 半導体発光装置およびその製造方法 | |
JP2014017346A (ja) | 電子部品パッケージ及び光学デバイス | |
KR100312691B1 (ko) | 비증발성 게터를 구비한 형광표시관 및 이 게터를 이용한 진공화 방법 | |
JP5144477B2 (ja) | 光半導体装置及びその製造方法 | |
JP3122514B2 (ja) | 放電ランプ装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070129 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090616 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090806 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091006 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091225 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100113 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100223 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100323 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130402 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140402 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |