JP4480721B2 - 偏光分布の乱れを補償する補正デバイスとマイクロリソグラフィ投射レンズ - Google Patents
偏光分布の乱れを補償する補正デバイスとマイクロリソグラフィ投射レンズ Download PDFInfo
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- JP4480721B2 JP4480721B2 JP2006515961A JP2006515961A JP4480721B2 JP 4480721 B2 JP4480721 B2 JP 4480721B2 JP 2006515961 A JP2006515961 A JP 2006515961A JP 2006515961 A JP2006515961 A JP 2006515961A JP 4480721 B2 JP4480721 B2 JP 4480721B2
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- 238000001393 microlithography Methods 0.000 title claims description 5
- 230000000694 effects Effects 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 9
- 210000001747 pupil Anatomy 0.000 claims description 9
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- 238000000034 method Methods 0.000 description 6
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 4
- 239000010436 fluorite Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
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- 238000010884 ion-beam technique Methods 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
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- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
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- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 239000004568 cement Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polarising Elements (AREA)
Description
Claims (12)
- 光学系(56)の中で光線(10)の断面上の偏光分布の摂動を補償する補正デバイスであって、2つの本質的に並行な面(26;126、127)を有してこの間で補正素子(22;122、222)の厚さ(d)は本質的に一定である複屈折補正素子(22;122;222;322)を備える少なくとも1つの補正コンポーネント(18;118)を有する補正デバイスであって、
少なくとも1つの補正コンポーネント(18、118)は、前記第1の補正素子(22;122;222;322)に割り当てられ2つの本質的に並行な面(24)を有する、少なくとも1つの別の複屈折補正素子(20、120a、120b;220;320)を備えることを特徴とし、
前記補正素子(20、22;120a、120b、122;220;222;320、322)のうち少なくとも1つの補正素子の、面(24、26;126、127)のうち少なくとも1つの面が、偏光分布の摂動が少なくとも概略で補償される局所的な厚さの変動Δdを形成するように加工されていることを特徴とし、
前記補正素子(20、22;120a、120b、122;220;222;320、322)の構成、厚さ(d)、複屈折特性が、局所的な厚さの変動Δdが無視されるとき複屈折効果が互いに相殺されるように選択されることを特徴とする補正デバイス。 - 前記補正素子(20、22;120a、120b、122;220;222;320、322)が、同じ材料を含むことを特徴とする請求項1に記載の補正デバイス。
- 補正コンポーネント(18;118)のすべての補正素子(20、22;120a、120b、122;220;222;320、322)の合計の厚さ(dg)が断面積にわたって一定であるように、前記補正素子(20、22;120a、120b、122;220;222;320、322)の面(24、26;126、127)が互いに相補的に加工されることを特徴とする請求項2に記載の補正デバイス。
- 前記補正コンポーネント(18、118)は2つの補正素子を備えることを特徴とし、
特定のポイントにおける摂動を補償するために必要な局所的な厚さの変動Δdは、1つの補正素子(22)の厚さ(d)がそのポイントでΔd/2だけ低減され、別の補正素子(20)の厚さがΔd/2だけ増加するように配分されることを特徴とする請求項3に記載の補正デバイス。 - 前記補正素子(320、322)の面がカーブしていることを特徴とする請求項1から4のいずれか一項に記載の補正デバイス。
- 前記補正コンポーネント(18、118)は、複屈折軸が相互に90度回転している2つの補正素子(20、22;120a、120b、122;220;222;320、322)を備えることを特徴とする請求項1から5のいずれか一項に記載の補正デバイス。
- 少なくとも1つの補正素子(220)が、厚さの変動による波面エラーを低減するようにさらに加工された(40)面を有することを特徴とする請求項1から6のいずれか一項に記載の補正デバイス。
- 2つの補正コンポーネント(18、220、222)が備えられ、1つの補正コンポーネント(18)の補正素子(20、22)の複屈折軸は、別の補正コンポーネントの補正素子(220、222)の複屈折軸に対して45度回転していることを特徴とする請求項1から7のいずれか一項に記載の補正デバイス。
- 請求項1から8のいずれか一項に記載の補正デバイス(316)を有するマイクロリソグラフィのための投射対物レンズ。
- 前記補正デバイス(316)は、前記投射対物レンズ(56)の瞳孔面(72)の少なくとも近くに配置されることを特徴とする請求項9に記載の投射対物レンズ。
- 前記補正デバイス(316)は、前記投射対物レンズ(56)の反射屈折部に含まれる結像鏡(68)のすぐ近くに配置されることを特徴とする請求項10に記載の投射対物レンズ。
- 請求項1から8のいずれか一項に記載のさらなる補正デバイスが、前記投射対物レンズ(56)のフィールド面の少なくとも近くに配置されることを特徴とする請求項10または11に記載の投射対物レンズ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10328938A DE10328938A1 (de) | 2003-06-27 | 2003-06-27 | Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie |
PCT/EP2004/006504 WO2005001527A1 (de) | 2003-06-27 | 2004-06-17 | Korrektureinrichtung zur kompensation von störungen der polarisationsverteilung sowie projektionsobjektiv für die mikrolithographie |
Publications (2)
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JP2007506990A JP2007506990A (ja) | 2007-03-22 |
JP4480721B2 true JP4480721B2 (ja) | 2010-06-16 |
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JP2006515961A Expired - Fee Related JP4480721B2 (ja) | 2003-06-27 | 2004-06-17 | 偏光分布の乱れを補償する補正デバイスとマイクロリソグラフィ投射レンズ |
Country Status (7)
Country | Link |
---|---|
US (1) | US7755833B2 (ja) |
EP (1) | EP1639393B1 (ja) |
JP (1) | JP4480721B2 (ja) |
KR (1) | KR101085737B1 (ja) |
AT (1) | ATE478355T1 (ja) |
DE (2) | DE10328938A1 (ja) |
WO (1) | WO2005001527A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101163435B1 (ko) | 2003-04-09 | 2012-07-13 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
TWI412067B (zh) | 2004-02-06 | 2013-10-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
US7728975B1 (en) | 2005-02-23 | 2010-06-01 | Carl Zeiss Smt Ag | Method for describing, evaluating and improving optical polarization properties of a microlithographic projection exposure apparatus |
KR20080043835A (ko) | 2005-09-14 | 2008-05-19 | 칼 짜이스 에스엠테 아게 | 마이크로리소그래피용 노광 시스템의 광학 시스템 |
WO2007055120A1 (ja) * | 2005-11-10 | 2007-05-18 | Nikon Corporation | 照明光学装置、露光装置、および露光方法 |
DE102006021334B3 (de) | 2006-05-05 | 2007-08-30 | Carl Zeiss Smt Ag | Polarisationsbeeinflussendes optisches Element sowie Verfahren zu dessen Herstellung sowie optisches System und mikrolithographische Projektionsbelichtungsanlage mit einem solchen Element |
JP5174810B2 (ja) * | 2006-06-16 | 2013-04-03 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の投影対物器械 |
DE102008001761A1 (de) | 2007-06-06 | 2008-12-11 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
DE102007055567A1 (de) * | 2007-11-20 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System |
DE102008026047A1 (de) * | 2008-01-26 | 2009-07-30 | Hager Electro Gmbh & Co. Kg | Verteilerkasten zum Einbau in eine Wandöffnung |
US9241143B2 (en) | 2008-01-29 | 2016-01-19 | At&T Intellectual Property I, L.P. | Output correction for visual projection devices |
WO2011141046A1 (en) * | 2010-04-23 | 2011-11-17 | Carl Zeiss Smt Gmbh | Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system |
EP2588916B1 (en) | 2010-06-29 | 2020-02-26 | Imax Corporation | Spatially modifying polarization state of light |
JP2013073021A (ja) | 2011-09-28 | 2013-04-22 | Fujifilm Corp | 潜像を有する物品 |
JP2015049381A (ja) * | 2013-09-02 | 2015-03-16 | ソニー株式会社 | 表示装置、表示方法及び補償部材の製造方法 |
US20210239893A1 (en) * | 2020-01-30 | 2021-08-05 | Lawrence Livermore National Security, Llc | Polarization manipulation of free-space electromagnetic radiation fields |
Family Cites Families (10)
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FR2020466A5 (ja) * | 1969-01-28 | 1970-07-10 | Commissariat Energie Atomique | |
US4643534A (en) * | 1984-08-20 | 1987-02-17 | General Electric Company | Optical transmission filter for far field beam correction |
JP3014811B2 (ja) * | 1991-08-08 | 2000-02-28 | 富士通株式会社 | 偏光子及び該偏光子を備えた変調器 |
JP3341269B2 (ja) * | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
EP0851304B1 (en) * | 1996-12-28 | 2004-03-17 | Canon Kabushiki Kaisha | Projection exposure apparatus and device manufacturing method |
DE19807120A1 (de) * | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optisches System mit Polarisationskompensator |
DE10123725A1 (de) * | 2001-05-15 | 2002-11-21 | Zeiss Carl | Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren |
DE10125487A1 (de) * | 2001-05-23 | 2003-01-02 | Zeiss Carl | Optisches Element, Projektionsobjektiv und Mikrolithographic-Projektionsbelichtungsanlage mit Fluoridkristall-Linsen |
KR20040015251A (ko) * | 2001-05-15 | 2004-02-18 | 칼 짜이스 에스엠티 아게 | 불화물 결정 렌즈들을 포함하는 렌즈 시스템 |
EP1451619A4 (en) * | 2001-10-30 | 2007-10-03 | Asml Netherlands Bv | STRUCTURES AND METHOD FOR REDUCING BERRATION IN OPTICAL SYSTEMS |
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2003
- 2003-06-27 DE DE10328938A patent/DE10328938A1/de not_active Ceased
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2004
- 2004-06-17 AT AT04739966T patent/ATE478355T1/de active
- 2004-06-17 EP EP04739966A patent/EP1639393B1/de not_active Expired - Lifetime
- 2004-06-17 WO PCT/EP2004/006504 patent/WO2005001527A1/de active Application Filing
- 2004-06-17 DE DE502004011557T patent/DE502004011557D1/de not_active Expired - Lifetime
- 2004-06-17 KR KR1020057025036A patent/KR101085737B1/ko not_active IP Right Cessation
- 2004-06-17 JP JP2006515961A patent/JP4480721B2/ja not_active Expired - Fee Related
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2005
- 2005-06-17 US US10/562,577 patent/US7755833B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2007506990A (ja) | 2007-03-22 |
US7755833B2 (en) | 2010-07-13 |
KR20060028646A (ko) | 2006-03-30 |
WO2005001527A1 (de) | 2005-01-06 |
US20070183017A1 (en) | 2007-08-09 |
KR101085737B1 (ko) | 2011-11-21 |
ATE478355T1 (de) | 2010-09-15 |
DE502004011557D1 (de) | 2010-09-30 |
DE10328938A1 (de) | 2005-01-20 |
EP1639393B1 (de) | 2010-08-18 |
EP1639393A1 (de) | 2006-03-29 |
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