JP4479923B2 - 耐久性を向上させるようにコーティングされた光学素子 - Google Patents
耐久性を向上させるようにコーティングされた光学素子 Download PDFInfo
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- JP4479923B2 JP4479923B2 JP2006507501A JP2006507501A JP4479923B2 JP 4479923 B2 JP4479923 B2 JP 4479923B2 JP 2006507501 A JP2006507501 A JP 2006507501A JP 2006507501 A JP2006507501 A JP 2006507501A JP 4479923 B2 JP4479923 B2 JP 4479923B2
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- 230000003287 optical effect Effects 0.000 title claims description 59
- 239000000463 material Substances 0.000 claims description 63
- 238000000576 coating method Methods 0.000 claims description 46
- 239000011248 coating agent Substances 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000011737 fluorine Substances 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000005350 fused silica glass Substances 0.000 claims description 8
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 229910001512 metal fluoride Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
- H01S3/0346—Protection of windows or mirrors against deleterious effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
T.M.ステファン、B.ヴァン・ジル、R.C.アンメ共著「真空照射下のSiO2レーザ窓の劣化(Degradation of Vacuum Exposed SiO2 Laser Windows)」SPIE Vol.1848、pp.106〜109(1992)
12 チャンバ
14,15 窓
16 被膜
24,26 鏡
Claims (10)
- 250nm未満の波長で動作するレーザの光路の材料として使用するのに適した、コーティングされた光学材料であって、
レーザ光線が入ってくる入射面およびレーザ光線が出ていく出射面を有する、造形された光学単結晶と、
前記単結晶の少なくとも出射面上にあり、MgF2をドープした溶融シリカであってMgF2含有率が0.2〜4重量%の範囲にあるMgF2をドープした溶融シリカからなる被膜と、
を含み、
Mがベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、およびそれらの混合物からなる群より選択される金属であり、Fがフッ素であるとするとき、前記単結晶の化学式がMF2であることを特徴とするコーティングされた光学材料。 - 前記被膜の厚さが20〜300nmの範囲にあることを特徴とする請求項1に記載のコーティングされた光学材料。
- 前記被膜の厚さが20〜150nmの範囲にあることを特徴とする請求項1に記載のコーティングされた光学材料。
- 前記被膜の厚さが20〜100nmの範囲にあることを特徴とする請求項1に記載のコーティングされた光学材料。
- 前記単結晶がCaF2であり、前記被膜がMgF2をドープした溶融シリカであることを特徴とする請求項1に記載のコーティングされた光学材料。
- 200nm未満の波長で動作するレーザの光路の材料として使用するのに適した、コーティングされた光学材料であって、
レーザ光線が入ってくる入射面およびレーザ光線が出ていく出射面を有する、造形された光学単結晶と、
前記単結晶の少なくとも出射面上にあり、MgF2をドープした溶融シリカであってMgF2含有率が0.2〜4重量%の範囲にあるMgF2をドープした溶融シリカからなる被膜と、
を含むコーティングされた光学材料。 - Mがベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、およびそれらの混合物からなる群より選択される金属であり、Fがフッ素であるとするとき、前記単結晶の化学式がMF2であることを特徴とする請求項6に記載のコーティングされた光学材料。
- 前記被膜の厚さが20〜300nmの範囲にあることを特徴とする請求項6に記載のコーティングされた光学材料。
- 前記被膜の厚さが20〜150nmの範囲にあることを特徴とする請求項6に記載のコーティングされた光学材料。
- 前記被膜の厚さが20〜100nmの範囲にあることを特徴とする請求項6に記載のコーティングされた光学材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46251803P | 2003-04-11 | 2003-04-11 | |
PCT/US2004/008910 WO2004095656A1 (en) | 2003-04-11 | 2004-03-23 | Coated optics to improve durability |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006523024A JP2006523024A (ja) | 2006-10-05 |
JP4479923B2 true JP4479923B2 (ja) | 2010-06-09 |
Family
ID=33310737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006507501A Expired - Lifetime JP4479923B2 (ja) | 2003-04-11 | 2004-03-23 | 耐久性を向上させるようにコーティングされた光学素子 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6872479B2 (ja) |
EP (1) | EP1614199B1 (ja) |
JP (1) | JP4479923B2 (ja) |
KR (1) | KR101014442B1 (ja) |
CN (1) | CN100365886C (ja) |
DE (1) | DE602004011038T2 (ja) |
TW (1) | TWI238262B (ja) |
WO (1) | WO2004095656A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7128984B2 (en) * | 2004-08-31 | 2006-10-31 | Corning Incorporated | Surfacing of metal fluoride excimer optics |
US7305019B2 (en) * | 2005-01-05 | 2007-12-04 | Intel Corporation | Excimer laser with electron emitters |
US7242843B2 (en) * | 2005-06-30 | 2007-07-10 | Corning Incorporated | Extended lifetime excimer laser optics |
EP2185298B1 (en) * | 2007-07-31 | 2012-07-04 | Corning Incorporated | Cleaning method for duv optical elements to extend their lifetime |
US20090244507A1 (en) * | 2008-03-28 | 2009-10-01 | Nikon Corporation | Optical member, light routing unit, and exposure apparatus |
US8986572B2 (en) | 2009-10-21 | 2015-03-24 | Corning Incorporated | Calcium fluoride optics with improved laser durability |
US20130104461A1 (en) * | 2011-09-16 | 2013-05-02 | Carbodeon Ltd Oy | Coating material, coating and coated object |
DE102011054837A1 (de) | 2011-10-26 | 2013-05-02 | Carl Zeiss Laser Optics Gmbh | Optisches Element |
WO2013152031A1 (en) * | 2012-04-04 | 2013-10-10 | Kla-Tencor Corporation | Protective fluorine-doped silicon oxide film for optical components |
DE102018221189A1 (de) | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Verfahren zum Bilden von Nanostrukturen an einer Oberfläche und optisches Element |
DE102019200208A1 (de) | 2019-01-10 | 2020-07-16 | Carl Zeiss Smt Gmbh | Verfahren zum in situ dynamischen Schutz einer Oberfläche und optische Anordnung |
US11143953B2 (en) | 2019-03-21 | 2021-10-12 | International Business Machines Corporation | Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3 |
DE102021200747A1 (de) | 2021-01-28 | 2022-07-28 | Carl Zeiss Smt Gmbh | Verfahren zum Bilden einer Schicht, optisches Element und optisches System |
CN113981380B (zh) * | 2021-08-24 | 2023-12-05 | 湖北光安伦芯片有限公司 | 一种激光器及其镀膜方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4101707A (en) * | 1977-04-04 | 1978-07-18 | Rockwell International Corporation | Homogeneous multilayer dielectric mirror and method of making same |
JP2792689B2 (ja) * | 1989-11-22 | 1998-09-03 | 三菱電機株式会社 | 光学部品保護方法 |
CA2040638A1 (en) * | 1990-04-20 | 1991-10-21 | Gedeon I. Deak | Barrier materials useful for packaging |
US5527596A (en) * | 1990-09-27 | 1996-06-18 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
JPH0543399A (ja) * | 1991-03-08 | 1993-02-23 | Ricoh Co Ltd | 薄膜機能部材 |
US6342312B2 (en) * | 1996-03-22 | 2002-01-29 | Canon Kabushiki Kaisha | Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same |
US6466365B1 (en) * | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
FR2812664B1 (fr) * | 2000-08-01 | 2002-11-08 | Essilor Int | Procede de depot d'une couche de silice dopee au fluor et son application en optique ophtalmique |
US6856638B2 (en) * | 2000-10-23 | 2005-02-15 | Lambda Physik Ag | Resonator arrangement for bandwidth control |
-
2003
- 2003-11-18 US US10/718,356 patent/US6872479B2/en not_active Expired - Lifetime
-
2004
- 2004-03-23 KR KR1020057019358A patent/KR101014442B1/ko active IP Right Grant
- 2004-03-23 JP JP2006507501A patent/JP4479923B2/ja not_active Expired - Lifetime
- 2004-03-23 WO PCT/US2004/008910 patent/WO2004095656A1/en active IP Right Grant
- 2004-03-23 CN CNB2004800096850A patent/CN100365886C/zh not_active Expired - Lifetime
- 2004-03-23 EP EP04759747A patent/EP1614199B1/en not_active Expired - Lifetime
- 2004-03-23 DE DE602004011038T patent/DE602004011038T2/de not_active Expired - Lifetime
- 2004-04-14 TW TW093110459A patent/TWI238262B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE602004011038T2 (de) | 2008-12-24 |
EP1614199B1 (en) | 2008-01-02 |
CN100365886C (zh) | 2008-01-30 |
US20040202225A1 (en) | 2004-10-14 |
CN1771638A (zh) | 2006-05-10 |
JP2006523024A (ja) | 2006-10-05 |
TWI238262B (en) | 2005-08-21 |
TW200533948A (en) | 2005-10-16 |
DE602004011038D1 (de) | 2008-02-14 |
KR20050111641A (ko) | 2005-11-25 |
EP1614199A1 (en) | 2006-01-11 |
KR101014442B1 (ko) | 2011-02-14 |
EP1614199A4 (en) | 2006-05-17 |
US6872479B2 (en) | 2005-03-29 |
WO2004095656A1 (en) | 2004-11-04 |
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