JP4477434B2 - 荷電粒子線露光装置およびデバイス製造方法 - Google Patents

荷電粒子線露光装置およびデバイス製造方法 Download PDF

Info

Publication number
JP4477434B2
JP4477434B2 JP2004192091A JP2004192091A JP4477434B2 JP 4477434 B2 JP4477434 B2 JP 4477434B2 JP 2004192091 A JP2004192091 A JP 2004192091A JP 2004192091 A JP2004192091 A JP 2004192091A JP 4477434 B2 JP4477434 B2 JP 4477434B2
Authority
JP
Japan
Prior art keywords
exposure apparatus
charged particle
particle beam
array
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004192091A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006013387A5 (enExample
JP2006013387A (ja
Inventor
恭宏 染田
明佳 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Canon Inc filed Critical Hitachi High Technologies Corp
Priority to JP2004192091A priority Critical patent/JP4477434B2/ja
Publication of JP2006013387A publication Critical patent/JP2006013387A/ja
Publication of JP2006013387A5 publication Critical patent/JP2006013387A5/ja
Application granted granted Critical
Publication of JP4477434B2 publication Critical patent/JP4477434B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2004192091A 2004-06-29 2004-06-29 荷電粒子線露光装置およびデバイス製造方法 Expired - Fee Related JP4477434B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004192091A JP4477434B2 (ja) 2004-06-29 2004-06-29 荷電粒子線露光装置およびデバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004192091A JP4477434B2 (ja) 2004-06-29 2004-06-29 荷電粒子線露光装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006013387A JP2006013387A (ja) 2006-01-12
JP2006013387A5 JP2006013387A5 (enExample) 2007-08-16
JP4477434B2 true JP4477434B2 (ja) 2010-06-09

Family

ID=35780225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004192091A Expired - Fee Related JP4477434B2 (ja) 2004-06-29 2004-06-29 荷電粒子線露光装置およびデバイス製造方法

Country Status (1)

Country Link
JP (1) JP4477434B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546767B2 (en) * 2010-02-22 2013-10-01 Ims Nanofabrication Ag Pattern definition device with multiple multibeam array
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP6293435B2 (ja) * 2013-08-08 2018-03-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6383228B2 (ja) * 2014-09-19 2018-08-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのビーム位置測定方法及びマルチ荷電粒子ビーム描画装置
US9892885B2 (en) * 2016-03-24 2018-02-13 Kla-Tencor Corporation System and method for drift compensation on an electron beam based characterization tool
JP6834429B2 (ja) * 2016-08-03 2021-02-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP7082927B2 (ja) * 2018-08-27 2022-06-09 株式会社Ｓｃｒｅｅｎホールディングス 露光装置
JP7582000B2 (ja) * 2021-03-22 2024-11-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
US12154756B2 (en) * 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Also Published As

Publication number Publication date
JP2006013387A (ja) 2006-01-12

Similar Documents

Publication Publication Date Title
CN100354757C (zh) 带电粒子束曝光装置和方法以及使用该装置的器件制造方法
JP5505821B2 (ja) 粒子ビーム露光装置のためのパターンロック装置
US6835511B2 (en) Methods and apparatus for detecting and correcting reticle deformations in microlithography
TWI582542B (zh) 在多子束曝光設備中用於決定子束位置的方法及用於決定兩個子束之間的距離的方法
JPH10294255A (ja) 電子ビーム照明装置、および該電子ビーム照明装置を備えた露光装置
JPH10214779A (ja) 電子ビーム露光方法及び該方法を用いたデバイス製造方法
JP2004303794A (ja) 露光装置
JP4612838B2 (ja) 荷電粒子線露光装置およびその露光方法
JPH09320931A (ja) 結像特性計測方法及び該方法を使用する転写装置
CN101387834A (zh) 曝光系统以及半导体装置的制造方法
JP2006013387A (ja) 荷電粒子線露光装置及び荷電粒子線露光装置の調整方法
JP7388237B2 (ja) マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP4157410B2 (ja) 電子線描画装置
JP2000331911A (ja) 電子ビーム描画装置および電子ビームを用いた描画方法
US8878141B2 (en) Drawing apparatus, and method of manufacturing article
JP2013021215A (ja) ビーム計測装置、描画装置、および物品の製造方法
US7034314B2 (en) Projection apparatus for projecting a pattern formed on a mask onto a substrate and a control method for a projection apparatus
JP4745739B2 (ja) 静電レンズ装置、露光装置、及びデバイス製造方法
JP4459524B2 (ja) 荷電粒子線露光装置、デバイス製造方法
JP5117069B2 (ja) 露光装置、及びデバイス製造方法
JP2006210455A (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP3919255B2 (ja) 電子ビーム露光装置及びデバイス製造方法
JP3315882B2 (ja) 電子線描画装置
JPH10209008A (ja) 荷電ビーム露光方法およびマスク
JP3710422B2 (ja) 近接露光方式電子ビーム露光装置の副偏向器のゲイン較正方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070629

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070629

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090413

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091009

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100212

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100311

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140319

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees