JP4466300B2 - 露光装置及び露光方法並びにデバイス製造方法、計測装置 - Google Patents

露光装置及び露光方法並びにデバイス製造方法、計測装置 Download PDF

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JP4466300B2
JP4466300B2 JP2004284218A JP2004284218A JP4466300B2 JP 4466300 B2 JP4466300 B2 JP 4466300B2 JP 2004284218 A JP2004284218 A JP 2004284218A JP 2004284218 A JP2004284218 A JP 2004284218A JP 4466300 B2 JP4466300 B2 JP 4466300B2
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light
optical system
exposure
projection optical
liquid
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Japanese (ja)
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JP2005268744A (ja
JP2005268744A5 (enExample
Inventor
壽 西永
郁雄 引間
光紀 豊田
恭志 水野
尚憲 北
修 谷津
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Nikon Corp
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Nikon Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004284218A 2003-09-29 2004-09-29 露光装置及び露光方法並びにデバイス製造方法、計測装置 Expired - Fee Related JP4466300B2 (ja)

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JP2004284218A JP4466300B2 (ja) 2003-09-29 2004-09-29 露光装置及び露光方法並びにデバイス製造方法、計測装置

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JP2003338420 2003-09-29
JP2004042931 2004-02-19
JP2004284218A JP4466300B2 (ja) 2003-09-29 2004-09-29 露光装置及び露光方法並びにデバイス製造方法、計測装置

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JP2010000173A Division JP5136566B2 (ja) 2003-09-29 2010-01-04 露光装置及び露光方法並びにデバイス製造方法

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JP2005268744A JP2005268744A (ja) 2005-09-29
JP2005268744A5 JP2005268744A5 (enExample) 2009-07-09
JP4466300B2 true JP4466300B2 (ja) 2010-05-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017215621A (ja) * 2003-09-29 2017-12-07 株式会社ニコン 露光装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2005175034A (ja) * 2003-12-09 2005-06-30 Canon Inc 露光装置
JP4018647B2 (ja) 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP4720747B2 (ja) * 2004-12-02 2011-07-13 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP4612833B2 (ja) * 2004-12-15 2011-01-12 キヤノン株式会社 露光装置及びデバイス製造方法
JP4908948B2 (ja) 2006-06-30 2012-04-04 キヤノン株式会社 露光装置およびデバイス製造方法
US8013977B2 (en) * 2006-07-17 2011-09-06 Asml Netherlands B.V. Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
JP2008159695A (ja) 2006-12-21 2008-07-10 Canon Inc 露光装置
US8975599B2 (en) 2007-05-03 2015-03-10 Asml Netherlands B.V. Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus
JP5004658B2 (ja) 2007-05-21 2012-08-22 キヤノン株式会社 露光装置、露光方法、デバイス製造方法及び測定装置
US8194231B2 (en) * 2007-10-02 2012-06-05 Asml Netherlands B.V. Lithographic apparatus and method
EP2264528A1 (en) * 2009-06-19 2010-12-22 ASML Netherlands B.V. Sensor and lithographic apparatus
JP5234091B2 (ja) * 2010-11-30 2013-07-10 ウシオ電機株式会社 光照射装置
JP5541198B2 (ja) * 2011-03-01 2014-07-09 ウシオ電機株式会社 光照射装置
US10082424B2 (en) * 2014-05-07 2018-09-25 Asml Netherlands B.V. Diamond-based monitoring apparatus for lithographic apparatus, and a lithographic apparatus comprising diamond-based monitoring apparatus
CN110892330B (zh) 2017-07-10 2024-05-03 Asml荷兰有限公司 光刻方法和设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017215621A (ja) * 2003-09-29 2017-12-07 株式会社ニコン 露光装置

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