JP4459086B2 - 積層型光起電力装置およびその製造方法 - Google Patents

積層型光起電力装置およびその製造方法 Download PDF

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Publication number
JP4459086B2
JP4459086B2 JP2005054963A JP2005054963A JP4459086B2 JP 4459086 B2 JP4459086 B2 JP 4459086B2 JP 2005054963 A JP2005054963 A JP 2005054963A JP 2005054963 A JP2005054963 A JP 2005054963A JP 4459086 B2 JP4459086 B2 JP 4459086B2
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Japan
Prior art keywords
photoelectric conversion
conversion layer
concentration
photovoltaic
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005054963A
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English (en)
Japanese (ja)
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JP2006245061A (ja
JP2006245061A5 (enExample
Inventor
正樹 島
国基 二宮
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2005054963A priority Critical patent/JP4459086B2/ja
Priority to CN2006100577781A priority patent/CN1828946B/zh
Priority to EP06251085A priority patent/EP1696493A1/en
Priority to US11/307,956 priority patent/US7923625B2/en
Publication of JP2006245061A publication Critical patent/JP2006245061A/ja
Publication of JP2006245061A5 publication Critical patent/JP2006245061A5/ja
Application granted granted Critical
Publication of JP4459086B2 publication Critical patent/JP4459086B2/ja
Priority to US12/836,342 priority patent/US8124867B2/en
Priority to US13/300,369 priority patent/US8383927B2/en
Priority to US13/739,631 priority patent/US20130125954A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2005054963A 2005-02-28 2005-02-28 積層型光起電力装置およびその製造方法 Expired - Fee Related JP4459086B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005054963A JP4459086B2 (ja) 2005-02-28 2005-02-28 積層型光起電力装置およびその製造方法
CN2006100577781A CN1828946B (zh) 2005-02-28 2006-02-27 叠层型光电动势装置及其制造方法
US11/307,956 US7923625B2 (en) 2005-02-28 2006-02-28 Stacked photovoltaic device and method of manufacturing the same
EP06251085A EP1696493A1 (en) 2005-02-28 2006-02-28 Stacked photovoltaic device and method of manufacturing the same
US12/836,342 US8124867B2 (en) 2005-02-28 2010-07-14 Stacked photovoltaic device and method of manufacturing the same
US13/300,369 US8383927B2 (en) 2005-02-28 2011-11-18 Stacked photovoltaic device and method of manufacturing the same
US13/739,631 US20130125954A1 (en) 2005-02-28 2013-01-11 Stacked photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005054963A JP4459086B2 (ja) 2005-02-28 2005-02-28 積層型光起電力装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006245061A JP2006245061A (ja) 2006-09-14
JP2006245061A5 JP2006245061A5 (enExample) 2007-04-19
JP4459086B2 true JP4459086B2 (ja) 2010-04-28

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JP2005054963A Expired - Fee Related JP4459086B2 (ja) 2005-02-28 2005-02-28 積層型光起電力装置およびその製造方法

Country Status (4)

Country Link
US (4) US7923625B2 (enExample)
EP (1) EP1696493A1 (enExample)
JP (1) JP4459086B2 (enExample)
CN (1) CN1828946B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4459086B2 (ja) * 2005-02-28 2010-04-28 三洋電機株式会社 積層型光起電力装置およびその製造方法
US7851693B2 (en) * 2006-05-05 2010-12-14 Palo Alto Research Center Incorporated Passively cooled solar concentrating photovoltaic device
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8703521B2 (en) 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
JP4775869B1 (ja) * 2010-05-27 2011-09-21 シャープ株式会社 光電変換装置
CN102479863A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 高光电转换效率的三层型太阳能电池
CN102130196A (zh) * 2010-12-31 2011-07-20 常州天合光能有限公司 一种低电阻的晶体硅太阳电池组件
CN102130197A (zh) * 2010-12-31 2011-07-20 常州天合光能有限公司 一种反光与低电阻的晶体硅太阳电池组件及其连接焊带
WO2016134704A1 (de) * 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Pv-schichtfolge erhalten durch ein raumtemperatur-verfahren und raumtemperatur-verfahren zur herstellung einer pv-schichtfolge
JP6723807B2 (ja) * 2015-04-23 2020-07-15 テルモ株式会社 バルーンコーティング方法、バルーン回転方法およびバルーンコーティング装置
MX2022001459A (es) 2019-08-09 2022-06-08 Leading Edge Equipment Tech Inc Oblea con regiones de baja concentracion de oxigeno.
KR20220044806A (ko) 2019-08-09 2022-04-11 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. 산소 농도가 낮은 영역이 있는 리본 또는 웨이퍼의 제조

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US4591892A (en) * 1982-08-24 1986-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS59231878A (ja) 1983-06-13 1984-12-26 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH06101573B2 (ja) 1984-04-13 1994-12-12 株式会社半導体エネルギー研究所 半導体装置
US4878097A (en) 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
JPS63224322A (ja) 1987-03-13 1988-09-19 Sanyo Electric Co Ltd 非晶質シリコンアロイ膜
JPS63318166A (ja) 1987-06-19 1988-12-27 Sanyo Electric Co Ltd 光起電力装置
JP2704565B2 (ja) 1990-12-27 1998-01-26 株式会社半導体エネルギー研究所 光電変換装置
US5298086A (en) 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
JPH07169985A (ja) 1994-10-27 1995-07-04 Semiconductor Energy Lab Co Ltd 半導体装置
JPH09246578A (ja) * 1996-03-11 1997-09-19 Sanyo Electric Co Ltd 光起電力素子
JP4208281B2 (ja) 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JP3768672B2 (ja) * 1998-02-26 2006-04-19 キヤノン株式会社 積層型光起電力素子
JPH11274527A (ja) 1998-03-24 1999-10-08 Sanyo Electric Co Ltd 光起電力装置
JP2000058889A (ja) 1998-08-07 2000-02-25 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜およびシリコン系薄膜光電変換装置
JP4126810B2 (ja) 1999-06-25 2008-07-30 富士電機ホールディングス株式会社 薄膜太陽電池の製造装置
JP4032610B2 (ja) * 2000-06-16 2008-01-16 富士電機アドバンストテクノロジー株式会社 非単結晶薄膜太陽電池の製造方法
JP2002231985A (ja) 2001-02-05 2002-08-16 Canon Inc 光起電力素子
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
JP4459086B2 (ja) * 2005-02-28 2010-04-28 三洋電機株式会社 積層型光起電力装置およびその製造方法

Also Published As

Publication number Publication date
JP2006245061A (ja) 2006-09-14
US7923625B2 (en) 2011-04-12
US20120060893A1 (en) 2012-03-15
US8383927B2 (en) 2013-02-26
CN1828946B (zh) 2010-06-09
EP1696493A1 (en) 2006-08-30
US20060207648A1 (en) 2006-09-21
US20100275970A1 (en) 2010-11-04
US8124867B2 (en) 2012-02-28
US20130125954A1 (en) 2013-05-23
CN1828946A (zh) 2006-09-06

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