JP4458906B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4458906B2 JP4458906B2 JP2004111380A JP2004111380A JP4458906B2 JP 4458906 B2 JP4458906 B2 JP 4458906B2 JP 2004111380 A JP2004111380 A JP 2004111380A JP 2004111380 A JP2004111380 A JP 2004111380A JP 4458906 B2 JP4458906 B2 JP 4458906B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- heat
- semiconductor device
- insulating film
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 331
- 238000001816 cooling Methods 0.000 claims description 94
- 239000011229 interlayer Substances 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 34
- 239000012809 cooling fluid Substances 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 86
- 229920005989 resin Polymers 0.000 description 27
- 239000011347 resin Substances 0.000 description 27
- 230000004048 modification Effects 0.000 description 26
- 238000012986 modification Methods 0.000 description 26
- 230000017525 heat dissipation Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004111380A JP4458906B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004111380A JP4458906B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005294760A JP2005294760A (ja) | 2005-10-20 |
JP2005294760A5 JP2005294760A5 (enrdf_load_stackoverflow) | 2007-05-10 |
JP4458906B2 true JP4458906B2 (ja) | 2010-04-28 |
Family
ID=35327313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004111380A Expired - Fee Related JP4458906B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4458906B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007142276A (ja) * | 2005-11-21 | 2007-06-07 | Toshiba Corp | 半導体装置及びその製造方法 |
TW200735308A (en) * | 2005-12-23 | 2007-09-16 | Koninkl Philips Electronics Nv | On-chip interconnect-stack cooling using sacrificial interconnect segments |
KR100737162B1 (ko) * | 2006-08-11 | 2007-07-06 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
FR2951871B1 (fr) * | 2009-10-23 | 2011-12-16 | St Microelectronics Sa | Plaque d'interface entre circuits integres |
FR2961017B1 (fr) * | 2010-06-02 | 2013-10-11 | Commissariat Energie Atomique | Puce electronique, composants electroniques et bras de commutation incorporant cette puce electronique |
US8680674B2 (en) * | 2012-05-31 | 2014-03-25 | Freescale Semiconductor, Inc. | Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices |
JP2018018908A (ja) * | 2016-07-26 | 2018-02-01 | パナソニックIpマネジメント株式会社 | 熱電変換器 |
JP6323527B2 (ja) * | 2016-10-17 | 2018-05-16 | Tdk株式会社 | 半導体チップおよび磁気記録装置 |
KR102652928B1 (ko) | 2017-02-06 | 2024-03-29 | 엘지이노텍 주식회사 | 열전 소자 |
KR20200099795A (ko) * | 2019-02-15 | 2020-08-25 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US11908766B2 (en) * | 2021-04-05 | 2024-02-20 | Jmj Korea Co., Ltd. | Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined |
CN113249692B (zh) * | 2021-04-29 | 2023-10-20 | 三河同飞制冷股份有限公司 | 一种大功率半导体元器件的冷却板 |
CN119289549B (zh) * | 2024-12-10 | 2025-02-11 | 安徽农业大学 | 一种半导体制冷结构以及冷凝器 |
-
2004
- 2004-04-05 JP JP2004111380A patent/JP4458906B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005294760A (ja) | 2005-10-20 |
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