JP4451219B2 - Crystal oscillator - Google Patents

Crystal oscillator Download PDF

Info

Publication number
JP4451219B2
JP4451219B2 JP2004165232A JP2004165232A JP4451219B2 JP 4451219 B2 JP4451219 B2 JP 4451219B2 JP 2004165232 A JP2004165232 A JP 2004165232A JP 2004165232 A JP2004165232 A JP 2004165232A JP 4451219 B2 JP4451219 B2 JP 4451219B2
Authority
JP
Japan
Prior art keywords
electrode
layer
surface layer
crystal
eutectic alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004165232A
Other languages
Japanese (ja)
Other versions
JP2005348082A (en
Inventor
貴彦 岩崎
茂 小原
源和 幸喜
正陽 中原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP2004165232A priority Critical patent/JP4451219B2/en
Priority to US11/142,100 priority patent/US7061164B2/en
Priority to EP05253422A priority patent/EP1603232B1/en
Priority to CNB2005100752019A priority patent/CN100521525C/en
Priority to DE602005012754T priority patent/DE602005012754D1/en
Publication of JP2005348082A publication Critical patent/JP2005348082A/en
Application granted granted Critical
Publication of JP4451219B2 publication Critical patent/JP4451219B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02094Means for compensation or elimination of undesirable effects of adherence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

本発明は水晶振動子を技術分野とし、特に共晶合金を用いて保持した水晶振動子の電極構造に関する。 The present invention is directed to art crystal oscillator, particularly the electrode structure of a crystal oscillator that holds with KyoAkirago gold.

(発明の背景)水晶振動子は周波数制御素子として知られ、例えば通信機器の発振器に発振子として適用される。このようなものの一つに、共晶合金を用いて水晶片を保持し、金属容器内に密閉封入した高安定用の水晶振動子がある。 BACKGROUND OF THE INVENTION A crystal resonator is known as a frequency control element, and is applied as an oscillator to an oscillator of a communication device, for example. One of such, holds the crystal element using KyoAkirago gold, there is a crystal oscillator of high stability for a sealed enclosed in a metal container.

(従来技術の一例)第3図は一従来例を説明する水晶振動子の図で、同図(a)は断面図、同図(b)は要部平面図、同図(c)は一部拡大断面図である。 (Example of Prior Art) FIG. 3 is a diagram of a crystal resonator for explaining one conventional example. FIG. 3 (a) is a cross-sectional view, FIG. 3 (b) is a plan view of the main part, and FIG. FIG.

水晶振動子は金属ベース1、サポータ2、水晶片3及び金属カバー4を備えてなる。金属ベース1は外周にフランジ1bを有し、少なくとも一対の気密端子5がベース本体を貫通する。ここでは2対(計4本)の気密端子5がベース本体を貫通する。そして、各気密端子5のリード線が一主面側に突出し、他主面側に導出される。各気密端子5は同心円上の互いに直交する直線上の外周に位置する。   The crystal resonator includes a metal base 1, a supporter 2, a crystal piece 3, and a metal cover 4. The metal base 1 has a flange 1b on the outer periphery, and at least a pair of hermetic terminals 5 penetrate the base body. Here, two pairs (four in total) of airtight terminals 5 penetrate the base body. And the lead wire of each airtight terminal 5 protrudes to one main surface side, and is derived | led-out to the other main surface side. Each hermetic terminal 5 is located on the outer periphery on a straight line orthogonal to each other on a concentric circle.

サポータ2は例えばNiとして、L字状とした平板材からなる。そして、L字状の水平部を一主面に突出した気密端子(リード線)5の先端にレーザによって溶接する。この場合、L字状の水平部は中心方向として、垂直部の板面を各直線上間で対向させる。   The supporter 2 is made of an L-shaped flat plate material such as Ni. Then, an L-shaped horizontal portion is welded to the tip of an airtight terminal (lead wire) 5 protruding from one main surface by a laser. In this case, the L-shaped horizontal part is the center direction, and the plate surfaces of the vertical part are opposed to each other on each straight line.

水晶片3はSCカットやATカットからなり、円板状とする。そして、両主面に設けた主面電極6と、両主面にまたがって形成された端面電極7とを有する。主面電極6は両主面間で互いに対向する励振電極6aを有し、反対方向の両端側に引出電極6bを延出する。そして、これらは、蒸着によって形成され、第1下地層8aを例えばCrとして第1表面層9aをAuとする。   The crystal piece 3 is made of SC cut or AT cut and has a disk shape. And it has the main surface electrode 6 provided in both main surfaces, and the end surface electrode 7 formed ranging over both main surfaces. The main surface electrode 6 has excitation electrodes 6a opposed to each other between both main surfaces, and extends extraction electrodes 6b on both end sides in opposite directions. These are formed by vapor deposition, and the first underlayer 8a is, for example, Cr and the first surface layer 9a is Au.

端面電極7は、引出電極6bの延出した水晶片3の一組の両端部及びこれと直交する他組の両端部に形成される。これらは、いずれも、NiCrとして両主面にまたがって形成される。なお、主面上にまたがる端面電極7は、一組の両端部では引出電極6b(主面電極6)上に重畳して、他組の両端部では水晶片3上に直接に形成される。   The end face electrodes 7 are formed at one end of one set of crystal pieces 3 from which the extraction electrode 6b extends and at both ends of another set orthogonal thereto. These are all formed as NiCr across both main surfaces. In addition, the end surface electrode 7 straddling on the main surface is formed on the extraction electrode 6b (main surface electrode 6) at one set of both ends, and is directly formed on the crystal piece 3 at the other end of the other set.

そして、水晶片3の一組及び他組の両端部の各側面(端面)と、各サポータ2の垂直部との間にAuGeとした共晶合金10を介在させる。例えばサポータ2の垂直部に溶融させて固着する。そして、4つのサポータ2に水晶片3の各側面を冶具等によって当接し、約400℃で加熱する。これにより、共晶合金10を溶融して水晶片3の主面を含む各端面をサポータ2に接合し、金属ベース1上に水晶片3を水平にして保持する。   Then, an eutectic alloy 10 made of AuGe is interposed between each side face (end face) of both ends of one set and the other set of crystal pieces 3 and a vertical portion of each supporter 2. For example, it is melted and fixed to the vertical portion of the supporter 2. Then, each side surface of the crystal piece 3 is brought into contact with the four supporters 2 with a jig or the like and heated at about 400 ° C. As a result, the eutectic alloy 10 is melted and the end faces including the main surface of the crystal piece 3 are joined to the supporter 2, and the crystal piece 3 is held horizontally on the metal base 1.

その後、金属カバー4を例えば冷間圧接(コールドウェルド)によって金属ベース1に接合し、水晶片3を密閉封入する。このようなものでは、例えば導電性接着剤を使用することなく水晶片3を共晶合金10によって接合するので、有機ガスが発生することなく振動特性を良好にする。このことから、高安定用の水晶振動子に適用される。   Thereafter, the metal cover 4 is joined to the metal base 1 by, for example, cold welding, and the crystal piece 3 is hermetically sealed. In such a case, for example, since the crystal piece 3 is bonded by the eutectic alloy 10 without using a conductive adhesive, the vibration characteristics are improved without generating organic gas. For this reason, it is applied to a crystal resonator for high stability.

また、端面電極7をNiCrとして主面電極6(引出電極6b)のAuに重畳する。したがって、共晶合金10の溶融時にNiCrに遮蔽されて主面電極6(Au)の金喰われを防止する。仮に、NiCrが端面のみで主面電極6上にない場合には、主面電極6(Au)に共晶合金10が流入して所謂金喰われを生じる。そして、主面電極6(Au)の剥離を生じ、導通不良を引き起こす。
特開平2003−332876号公報
Further, the end face electrode 7 is NiCr and is superimposed on Au of the main face electrode 6 (lead electrode 6b). Therefore, when the eutectic alloy 10 is melted, it is shielded by NiCr to prevent the main surface electrode 6 (Au) from being eroded. If NiCr is only on the end face and not on the main surface electrode 6, the eutectic alloy 10 flows into the main surface electrode 6 (Au) and so-called gold erosion occurs. Then, the main surface electrode 6 (Au) is peeled off, causing poor conduction.
JP-A-2003-332876

(従来技術の問題点)しかしながら、上記構成の水晶振動子では、端面電極7をNiCrとするのみなので、共晶合金10との付着力が弱くて接合強度が小さい問題があった。例えば衝撃時にサポータ2から水晶片3が離脱して耐衝撃性を悪くする。 (Problems of the prior art) However, the crystal resonator having the above-described configuration has a problem that the bonding strength with the eutectic alloy 10 is weak and the bonding strength is small because the end face electrode 7 is only NiCr. For example, the crystal piece 3 is detached from the supporter 2 at the time of impact, and the impact resistance is deteriorated.

このことから、例えば第4図に示したように、端面電極7のNiCrを第2下地層8bとしてAuからなる第2表面層9bを設けることが考えられた。但し、第2表面層9b(Au)よりも第2下地層8b(NiCr)を主面上で突出させる。しかし、この場合には、第2表面層9b(Au)が共晶合金10(AuGe)によって同様の金喰われを生じ、第2下地層8b(NiCr)との接合強度が小さくて剥離を引き起こす問題があった。   From this, for example, as shown in FIG. 4, it was considered to provide a second surface layer 9b made of Au using NiCr of the end face electrode 7 as the second underlayer 8b. However, the second base layer 8b (NiCr) is projected on the main surface rather than the second surface layer 9b (Au). However, in this case, the second surface layer 9b (Au) causes the same gold erosion due to the eutectic alloy 10 (AuGe), and the bonding strength with the second underlayer 8b (NiCr) is low, causing peeling. There was a problem.

(発明の目的)本発明は剥離を防止して接合強度を高めた共晶合金による接合の水晶振動子を提供することを目的とする。 (Object of the Invention) An object of the present invention is to provide a crystal resonator bonded with a eutectic alloy which prevents peeling and increases the bonding strength.

本発明は、特許請求の範囲(請求項1)に示したように、水晶片と、前記水晶片の両主面に形成される第1下地層を有して第1表面層をAuとした主面電極と、前記主面電極上にまたがって前記水晶片の側面に形成される第2下地層及びAuからなる第2表面層を有する端面電極と、前記端面電極と少なくともAuを含む共晶合金によって接合して前記水晶片を水平方向に保持する平板状の金属サポータと、前記金属サポータの立設した金属ベースとを備え、前記第1及び第2下地層はいずれもCr又はNiCrとした水晶振動子であって、前記端面電極における前記第2下地層と前記第2表面層との間に中間層を設け、前記中間層は前記第2表面層よりも前記主面電極上で突出するとともに、前記中間層は前記第2下地層と第2表面層及び前記共晶合金との付着力を高めるPt又はTiとした構成とする。 The present invention has a crystal piece and a first base layer formed on both main surfaces of the crystal piece, and the first surface layer is Au as shown in the claims (Claim 1). A main surface electrode; an end surface electrode having a second surface layer made of Au and a second underlayer formed on a side surface of the crystal piece straddling the main surface electrode; and a eutectic containing at least the end surface electrode and Au. A flat plate metal supporter joined by an alloy to hold the crystal piece in the horizontal direction, and a metal base erected on the metal supporter, and the first and second underlayers are both Cr or NiCr. In the quartz resonator, an intermediate layer is provided between the second base layer and the second surface layer in the end face electrode, and the intermediate layer protrudes on the main surface electrode more than the second surface layer. together with the intermediate layer is the second underlayer and the second surface layer and the eutectic A structure in which a Pt or Ti enhances the adhesion of the gold.

このような構成であれば、端面電極の第2表面層はAuなので、Auを含む共晶合金との馴染みが良好で接合強度を高める。そして、端面電極の第2下地層と第2表面層との間に第2表面層及び共晶合金との付着力の高めるPt又はTiとした中間層を設けるので、第2表面層(Au)が金喰われを生じても中間層との接合強度を高くして剥離を防止する。 With such a configuration, since the second surface layer of the end face electrode is Au, the familiarity with the eutectic alloy containing Au is good and the bonding strength is increased. Then, an intermediate layer made of Pt or Ti for increasing the adhesion between the second surface layer and the eutectic alloy is provided between the second underlayer and the second surface layer of the end face electrode, so that the second surface layer (Au) Even if gold erosion occurs , the bonding strength with the intermediate layer is increased to prevent peeling.

また、中間層(Pt又はTi)は水晶片の主面上で第2表面層よりも突出するので、溶融時の共晶合金は主面電極である第1表面層(Au)への流入を防止して金喰われを防止する。したがって、共晶合金による全体としての接合強度も高く、主面電極の金喰われによる剥離もなくて、サポータと水晶片との接合を確実にする。 Further, since the intermediate layer (Pt or Ti) protrudes from the second surface layer on the main surface of the crystal piece, the eutectic alloy during melting does not flow into the first surface layer (Au) which is the main surface electrode. Prevent gold erosion. Therefore, the bonding strength as a whole by the eutectic alloy is also high, and there is no peeling due to the gold biting of the main surface electrode, and the bonding between the supporter and the crystal piece is ensured.

削除Delete

第1図及び第2図は本発明の一実施例を説明する図で、第1図は水晶振動子の一部拡大断面図、第2図は作用を説明する一部拡大断面図である。なお、前従来例と同一部分には同番号を付与してその説明は簡略又は省略する。   FIGS. 1 and 2 are views for explaining an embodiment of the present invention. FIG. 1 is a partially enlarged sectional view of a crystal resonator, and FIG. 2 is a partially enlarged sectional view for explaining the operation. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.

水晶振動子は前述したように、主面電極6を有する水晶片3の一組及び他組の両端部に設けた端面電極7とL字状とした各サポータ2とを共晶合金10(AuGe)によって接合し、金属ベース1上に水平に保持する。主面電極6は前述同様に第1下地層8aをCrとし、第1表面層9aをAuとする。また、各端面電極7は同様に第2下地層8bをNiCr及び第2表面層9bをAuとする。   As described above, the crystal resonator includes a set of crystal pieces 3 having the main surface electrode 6 and end face electrodes 7 provided at both ends of the other set and the L-shaped supporters 2 and a eutectic alloy 10 (AuGe). ) And held horizontally on the metal base 1. In the main surface electrode 6, the first underlayer 8 a is made of Cr and the first surface layer 9 a is made of Au as described above. Similarly, in each end face electrode 7, the second underlayer 8b is NiCr and the second surface layer 9b is Au.

そして、ここでは、端面電極7における第2下地層8b(NiCr)と第2表面層9b(Au)との間にPtからなる中間層11を設ける。中間層11(Pt)は、一組の両端部では第2表面層9b(Au)よりも突出して、他組の両端部では第2表面層9bと同一長として形成する。そして、前述同様にして共晶合金10(AuGe)によって、水晶片3の一組及び他組の両端部である端面とサポータ2とを接合する。   In this case, the intermediate layer 11 made of Pt is provided between the second underlayer 8b (NiCr) and the second surface layer 9b (Au) in the end face electrode 7. The intermediate layer 11 (Pt) is formed so as to protrude from the second surface layer 9b (Au) at both ends of one set and to have the same length as the second surface layer 9b at both ends of the other set. Then, in the same manner as described above, the supporter 2 is bonded to the end face which is one end of the crystal piece 3 and the other end of the other end by the eutectic alloy 10 (AuGe).

このような構成であれば、発明の効果の欄で述べたように、端面電極7の第2表面層9bはAuと共晶合金10(AuGe)とは馴染みが良好で接合強度が高い。そして、端面電極7の中間層11(Pt)は、第2下地層8b(NiCr)と第2表面層9b(Au)及び共晶合金10(AuGe)との付着力が大きい。したがって、第2表面層9b(Au)が共晶合金10(AuGe)によって金喰われを生じても、共晶合金10(AuGe)及び第2表面層9b(Au)と中間層11(Pt)との接合強度が高いことから、剥離を防止する。   In such a configuration, as described in the column of the effect of the invention, the second surface layer 9b of the end face electrode 7 is familiar with Au and the eutectic alloy 10 (AuGe) and has high bonding strength. The intermediate layer 11 (Pt) of the end face electrode 7 has a large adhesive force between the second underlayer 8b (NiCr), the second surface layer 9b (Au), and the eutectic alloy 10 (AuGe). Therefore, even if the second surface layer 9b (Au) is eroded by the eutectic alloy 10 (AuGe), the eutectic alloy 10 (AuGe) and the second surface layer 9b (Au) and the intermediate layer 11 (Pt) Because of its high bonding strength, peeling is prevented.

また、中間層11(Pt)は水晶片3の主面上で第2表面層9b(Au)よりも突出するので、溶融時の共晶合金10(AuGe)は主面電極6の第1表面層9a(Au)への流入を防止する(第2図)。したがって、第1表面層9a(Au)の共晶合金10(AuGe)による金喰われを防止する。これらにより、共晶合金10(AuGe)による全体としての接合強度も高く、主面電極6の金喰われによる剥離もなくて、サポータ2と水晶片3との接合を確実にする。   Further, since the intermediate layer 11 (Pt) protrudes more than the second surface layer 9 b (Au) on the main surface of the crystal piece 3, the eutectic alloy 10 (AuGe) at the time of melting is the first surface of the main surface electrode 6. Inflow to the layer 9a (Au) is prevented (FIG. 2). Therefore, gold erosion by the eutectic alloy 10 (AuGe) of the first surface layer 9a (Au) is prevented. As a result, the bonding strength of the eutectic alloy 10 (AuGe) as a whole is high, and the main surface electrode 6 is not peeled off due to gold erosion, so that the supporter 2 and the crystal piece 3 are reliably bonded.

(他の事項)上記実施例では端面電極7の中間層11はPtとしたが、これ以外の例えばTiであってもよく、要は第2下地層8bと第2表面層9b及び共晶合金10との付着力を高める金属であればよい。また、主面電極6の第1下地電極8aはCrとして端面電極7の下地電極はNiCrとしたが、いずれもCr又はNiCrとしてもよい。 (Other matters) In the above embodiment, the intermediate layer 11 of the end face electrode 7 is made of Pt. However, other than this, for example, Ti may be used. In short, the second underlayer 8b, the second surface layer 9b and the eutectic alloy are used. What is necessary is just a metal which raises the adhesive force with 10. Further, although the first base electrode 8a of the main surface electrode 6 is Cr and the base electrode of the end face electrode 7 is NiCr, both may be Cr or NiCr.

また、端面電極7は一組及び他組の両端部に設けたが、少なくとも主面電極6(引出電極6b)の延出した一組の両端部に設けて、この両端部のみを保持してもよい。そして、水晶片3は円状としたが、矩形状であったとしてもよいことは勿論である。さらに、共晶合金10はAuGeとしたが、例えばAuSn等であってもよく、基本的にはAuを含み融点温度が水晶の転移点温度573℃以下の共晶合金であればよい。   Further, the end face electrodes 7 are provided at both ends of one set and the other set, but are provided at least at both ends of the extended set of the main face electrode 6 (extraction electrode 6b), and hold only both ends. Also good. And although the crystal piece 3 was circular, it is needless to say that it may be rectangular. Furthermore, although the eutectic alloy 10 is AuGe, for example, AuSn or the like may be used. Basically, any eutectic alloy containing Au and having a melting point temperature of 573 ° C. or lower is sufficient.

本発明の一実施例を説明する水晶振動子の一部拡大断面図である。It is a partial expanded sectional view of the crystal oscillator explaining one Example of this invention. 本発明の一実施例の作用を説明する水晶振動子の一部拡大断面図である。It is a partial expanded sectional view of the crystal oscillator explaining the effect | action of one Example of this invention. 従来例を説明する水晶振動子の図で、同図(a)は断面図、同図(b)は要部平面図、同図(c)は一部拡大断面図である。It is a figure of the crystal resonator explaining a prior art example, the figure (a) is sectional drawing, the figure (b) is a principal part top view, and the figure (c) is a partially expanded sectional view. 従来例の他の例を説明する水晶振動子の一部拡大断面図である。It is a partial expanded sectional view of the crystal oscillator explaining the other example of a prior art example.

1 金属ベース、2 サポータ、3 水晶片、4 金属カバー、5 気密端子、6 主面電極、7 端面電極、8 下地層、9 表面層、10 共晶合金、11 中間層。   DESCRIPTION OF SYMBOLS 1 Metal base, 2 Supporter, 3 Crystal piece, 4 Metal cover, 5 Airtight terminal, 6 Main surface electrode, 7 End surface electrode, 8 Underlayer, 9 Surface layer, 10 Eutectic alloy, 11 Intermediate layer.

Claims (1)

水晶片と、前記水晶片の両主面に形成される第1下地層を有して第1表面層をAuとした主面電極と、前記主面電極上にまたがって前記水晶片の側面に形成される第2下地層及びAuからなる第2表面層を有する端面電極と、前記端面電極と少なくともAuを含む共晶合金によって接合して前記水晶片を水平方向に保持する平板状の金属サポータと、前記金属サポータの立設した金属ベースとを備え、前記第1及び第2下地層はいずれもCr又はNiCrとした水晶振動子であって、前記端面電極における前記第2下地層と前記第2表面層との間に中間層を設け、前記中間層は前記第2表面層よりも前記主面電極上で突出するとともに、前記中間層は前記第2下地層と第2表面層及び前記共晶合金との付着力を高めるPt又はTiとしたことを特徴とする水晶振動子。 A crystal piece, a main surface electrode having a first base layer formed on both main surfaces of the crystal piece, the first surface layer being Au, and a side surface of the crystal piece straddling the main surface electrode An end face electrode having a second underlayer formed and a second surface layer made of Au, and a flat plate metal supporter that holds the crystal piece in a horizontal direction by joining the end face electrode and a eutectic alloy containing at least Au. And a metal base in which the metal supporter is erected, wherein each of the first and second underlayers is a crystal resonator made of Cr or NiCr, and the second underlayer and the second underlayer in the end face electrode An intermediate layer is provided between the second surface layer, the intermediate layer protrudes more on the main surface electrode than the second surface layer, and the intermediate layer includes the second underlayer, the second surface layer, and the common layer. and characterized in that a Pt or Ti enhances the adhesion between the eutectic alloy Crystal oscillator.
JP2004165232A 2004-06-03 2004-06-03 Crystal oscillator Expired - Fee Related JP4451219B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004165232A JP4451219B2 (en) 2004-06-03 2004-06-03 Crystal oscillator
US11/142,100 US7061164B2 (en) 2004-06-03 2005-06-01 Crystal oscillator
EP05253422A EP1603232B1 (en) 2004-06-03 2005-06-03 Crystal oscillator
CNB2005100752019A CN100521525C (en) 2004-06-03 2005-06-03 Crystal oscillator
DE602005012754T DE602005012754D1 (en) 2004-06-03 2005-06-03 crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004165232A JP4451219B2 (en) 2004-06-03 2004-06-03 Crystal oscillator

Publications (2)

Publication Number Publication Date
JP2005348082A JP2005348082A (en) 2005-12-15
JP4451219B2 true JP4451219B2 (en) 2010-04-14

Family

ID=34941564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004165232A Expired - Fee Related JP4451219B2 (en) 2004-06-03 2004-06-03 Crystal oscillator

Country Status (5)

Country Link
US (1) US7061164B2 (en)
EP (1) EP1603232B1 (en)
JP (1) JP4451219B2 (en)
CN (1) CN100521525C (en)
DE (1) DE602005012754D1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866258B2 (en) * 2004-08-24 2007-01-10 太平洋セメント株式会社 Piezoelectric device and piezoelectric switch including the same
JP4665768B2 (en) * 2006-01-10 2011-04-06 エプソントヨコム株式会社 Hermetic sealing structure, piezoelectric device and manufacturing method thereof
JP2009164673A (en) * 2007-12-28 2009-07-23 Nippon Dempa Kogyo Co Ltd Metal base for crystal unit and crystal unit using the same
JP4555359B2 (en) * 2008-04-02 2010-09-29 日本電波工業株式会社 Crystal oscillator
CN102545821A (en) * 2010-12-28 2012-07-04 陕西华星电子集团有限公司 High-overload resistant quartz crystal element
US10393525B2 (en) * 2015-05-22 2019-08-27 Georgia Tech Research Corporation Micro-hemispherical resonators and methods of making the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478693A (en) * 1977-12-05 1979-06-22 Matsushima Kogyo Co Ltd Crystal vibrator
JPS54132187A (en) * 1978-04-06 1979-10-13 Seiko Instr & Electronics Ltd Crystal oscillator
JP3432983B2 (en) * 1995-11-30 2003-08-04 キンセキ株式会社 Quartz crystal resonator and its manufacturing method
JPH11205898A (en) * 1998-01-16 1999-07-30 Mitsubishi Electric Corp Electrode for dielectric thin-film element, its manufacture and ultrasonic oscillator using the electrode
JP2002026683A (en) * 2000-07-05 2002-01-25 Nippon Dempa Kogyo Co Ltd Quartz vibrator
JP4022055B2 (en) * 2001-11-19 2007-12-12 日本電波工業株式会社 Heat resistant quartz crystal
JP3977682B2 (en) * 2002-05-14 2007-09-19 日本電波工業株式会社 Quartz crystal resonator and its holding structure
JP4275396B2 (en) * 2002-12-17 2009-06-10 日本電波工業株式会社 Crystal oscillator

Also Published As

Publication number Publication date
CN1705223A (en) 2005-12-07
EP1603232B1 (en) 2009-02-18
EP1603232A2 (en) 2005-12-07
EP1603232A3 (en) 2007-02-28
US7061164B2 (en) 2006-06-13
JP2005348082A (en) 2005-12-15
DE602005012754D1 (en) 2009-04-02
CN100521525C (en) 2009-07-29
US20050269912A1 (en) 2005-12-08

Similar Documents

Publication Publication Date Title
JP5129284B2 (en) Piezoelectric vibrator and method for manufacturing the piezoelectric vibrator
JP4451219B2 (en) Crystal oscillator
JP4555359B2 (en) Crystal oscillator
US7061086B2 (en) Silicon package for piezoelectric device
JPS642288B2 (en)
JP3977682B2 (en) Quartz crystal resonator and its holding structure
JP3775433B2 (en) Electronic component equipment
JPH02298110A (en) Crystal resonator
JP2005051513A (en) Crystal resonator
JP3864056B2 (en) Crystal oscillator
JP3815772B2 (en) Crystal oscillator
JPS6119213A (en) Electrode structure of piezoelectric vibrator
JP2007173973A (en) Manufacturing method of crystal device
JP3753619B2 (en) Crystal oscillator
JP2001267867A (en) Method for manufacturing piezoelectric oscillator
JP2007019537A (en) Electronic apparatus and its manufacturing method
JP2007208470A (en) Piezoelectric vibrator
JPH0774576A (en) Piezoelectric vibrator
JP2013098777A (en) Crystal device
JP2005151493A (en) Crystal resonator
JPH08316772A (en) Piezoelectric device
JPS6048925B2 (en) Support structure of tuning fork crystal resonator
JPS6163106A (en) Package of crystal resonator
JP2014053715A (en) Piezoelectric vibration piece and piezoelectric device
JP2000151332A (en) Package for electronic component

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091110

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091223

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100126

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100127

R150 Certificate of patent or registration of utility model

Ref document number: 4451219

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees