JP4275396B2 - Crystal oscillator - Google Patents

Crystal oscillator Download PDF

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Publication number
JP4275396B2
JP4275396B2 JP2002364710A JP2002364710A JP4275396B2 JP 4275396 B2 JP4275396 B2 JP 4275396B2 JP 2002364710 A JP2002364710 A JP 2002364710A JP 2002364710 A JP2002364710 A JP 2002364710A JP 4275396 B2 JP4275396 B2 JP 4275396B2
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Japan
Prior art keywords
electrode
layer
crystal
conductive
lead
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JP2002364710A
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JP2004200835A (en
Inventor
精司 小田
三十四 梅木
博 上原
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Nihon Dempa Kogyo Co Ltd
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Nihon Dempa Kogyo Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は表面実装用の水晶振動子(以下、表面実装振動子とする)を産業上の技術分野とし、特に共晶合金を用いて接続した水晶振動子の電極構造に関する。
【0002】
【従来の技術】
(発明の背景)表面実装振動子は小型・軽量であることから、特に携帯機器例えば携帯電話の周波数や時間の基準源として使用される。近年では、高信頼及び高周波化が一層求められ、これに起因して保持構造等の見直が求められている。
【0003】
(従来技術の一例)第4図及び第5図は一従来例を説明する図で、第4図は表面実装振動子の分解組立図、第5図(a)は水晶片の断面図、同図(b)は平面図である。
【0004】
表面実装振動子は、容器本体1に水晶片2を収容してカバー3を被せ、水晶片2を密閉封入してなる。容器本体1は例えば凹状とした積層セラミックからなり、内底面に水晶片2との接続端子としての一対のメタライズ層(水晶端子とする)4を有する。外表面(底面及び側面)には、水晶端子4と電気的に接続した表面実装用の図示しない実装電極を有する。
【0005】
水晶片2は両主面に励振電極5を有し、引出電極を経て一端部両側に外部接続用の導出電極6を形成する。導出電極6はそれぞれ角部の側面を経て反対面に折り返して形成される。そして、これらの各電極は、水晶片2の主面から、一層目を下地電極8、二層目を導通電極9として、蒸着等によって形成される。ここでは、一層目(下地電極8)をCr、二層目(導通電極9)をAuとする。なお、水晶片2と導通電極9としてのAuとは付着強度が低いため、両者間に馴染みのよい下地電極8としてCrを介在させる。
【0006】
そして、一端部両側の導出電極6が、これと対応して形成された内底面の水晶端子4に面対向して、導電性接着剤7によって固着される。そして、例えば容器本体1の開口端面に設けられた図示しない金属リングやメタライズ層に、金属としたカバー3をシームやビーム溶接によって接合してなる。
【0007】
【発明が解決しようとする課題】
(従来技術の問題点)しかしながら、上記構成の表面実装振動子では、導電性接着剤7によって水晶片2を固着する保持構造に起因して次の問題があった。すなわち、導電性接着剤7は、有機物としての高分子からなる例えばシリコン系の樹脂を母体とする。
【0008】
このため、例えば導電性接着剤7の硬化時に有機物から放出ガスが発生し、これが水晶片2に付着して経年変化特性を悪化させる問題があった。特に高周波化(例えば100MHz以上)が進み、水晶片2が薄くなるほど影響は大きく、問題は顕著になる。また、仕様等が厳しく高信頼を求められた場合も同様である。
【0009】
(発明の目的)本発明は経年変化特性及び振動特性を良好にして、高周波化及び高信頼性を促進する水晶振動子を提供することを目的とする。
【0010】
【特許文献1】
特願2002-138441号
【0011】
【課題を解決するための手段】
本発明は、特許請求の範囲(請求項1)に示したように、水晶片の両主面に形成された励振電極から引出電極を延出して接続端子としての電極導出部を設け、前記水晶片の電極導出部を共晶合金によって、前記水晶片が収容される容器本体の水晶端子に接続してなる水晶振動子であって、前記電極導出部の電極構造は前記水晶片の主面から一層目を下地電極、二層目を導通電極、三層目を拡散防止電極、四層目を遮蔽電極、五層目を接合電極とし、前記一層目の下地電極及び前記二層目の導通電極は前記励振電極と同一構造として前記励振電極から延出し、前記三層目の拡散防止電極は前記四層目の遮蔽電極が前記導通電極に拡散することを防止する金属からなり、前記四層目の遮蔽電極は前記五層目の接合電極の溶融時に前記導通電極の喰われを抑止する金属からなり、前記一層目の下地電極はCr又はNiCrとし、前記二層目の導通電極はAuとし、前記三層目の拡散防止電極はAuとし、前記四層目の遮蔽電極はCr又はNiCrとし、前記五層目の接合電極はAuGeとした構成とする。
【0012】
削除
【0013】
削除
【0014】
削除
【0015】
削除
【0016】
【実施例】
第1図は本発明の一実施例を説明する表面実装振動子の一部断面図である。なお、前従来例と同一部分には同番号を付与してその説明は簡略又は省略する。
【0017】
表面実装振動子は、前述したように容器本体1に水晶片2を収容してカバー3を被せ、密閉封入してなる。水晶片2は前述同様に両主面に励振電極5を、これと接続して折返して形成された導出電極6を一端部両側に有する(前第4図及び第5図参照)。
【0018】
導出電極6は5層構造として前述同様に一層目の下地電極8をCr、二層目の導通電極9をAuとする。そして、ここでは二層目の導通電極9上に、三層目として拡散防止電極10を、四層目として遮蔽電極11を、さらにその上に五層目として接合電極12を蒸着等によって形成する。
【0019】
この例では、三層目の拡散防止電極10をAu、四層目の遮蔽電極11はCrとし、五層目の接合電極12はAuGeからなる共晶合金とする。なお、図では各層の厚みは同程度にしたが、下地電極8のCrが約100オングストローム、導通電極9のAuが300オングストローム以上、拡散防止電極10のAuが3000オングストローム、遮蔽電極11のCrが2000オングストローム以上、接合電極12が4500オングストローム以上とする。
【0020】
このようなものでは、容器本体1の水晶端子4上に接合金属13を設ける。接合金属13は厚みを約30μmとした共晶合金AuGeとする。そして、図示しない治工具を用いて、水晶片2の一端部両側を加熱するとともに押圧する。要するに、熱圧着によって、いずれも共晶合金AuGeとした接合電極12と接合金属13を溶融し、水晶片2の一端部両側を水晶端子4に電気的・機械的に接続する。
【0021】
このような構成であれば、従来例の導電性接着剤を使用することなく、共晶合金AuGeを用いた水晶片2の接合となり、容器本体1内には有機物が殆ど存在しない。したがって、放出ガスが水晶片2に付着することもないので、経年変化特性を良好に維持して、表面実装振動子の高信頼性及び高周波化を促進する。
【0022】
また、二層目の導通電極9(Au)と五層目の接合電極12(共晶合金AuGe)との間に、拡散防止電極10(Au)と遮蔽電極11(Cr)とを介在させる。したがって、熱圧着時に、溶融した接合金属13及び接合電極(AuGe)12が遮蔽電極11(Cr)によって遮断されて、拡散防止電極10及び導通電極9(Au)に進行することなく喰われを防止する(特許文献1)。
【0023】
なお、遮蔽電極11が無い場合には、拡散防止電極10及び導通電極9(Au)が接合金属13及び接合電極(AuGe)に吸引されて所謂食われを生じて剥離する。これにより、導通不良を引き起こす。したがって、この実施例では、遮蔽電極11(Cr)によって拡散防止電極10及び導通電極9の金食われを防止して、導通を確実に維持できる。
【0024】
さらに、ここでは拡散防止電極10(Au)を導通電極9と遮蔽電極11(Cr)との間に介在させる。したがって、遮蔽電極11のCrが拡散防止電極(Au)によって吸収され、導通電極9(Au)への拡散を防止して導通抵抗を小さく維持する。要するに、Au層の厚みを大きくしてCrの拡散を防止する。これにより、導通抵抗の上昇によるクリスタルインピーダンスの増加を抑止する。
【0025】
なお、導通電極9(Au)自体の厚みを大きくすればよいが、高周波(例えば100MHz以上)になると励振電極6の質量を小さくして振動特性を阻害しないようにする必要がある。したがって、導通電極9とは別個に拡散防止電極10が必要になる。
【0026】
【他の事項】
上記実施例では水晶片2は平板状として説明したが、第2図に示したようにしてもよい。すなわち、振動領域の厚みを小さくして厚みの大きい外周部に導通電極6を形成し、外周部を共晶合金によって保持してもよい。ここでは、一端部両側の導出電極6は電極貫通孔14によってそれぞれ反対面に形成される。
【0027】
また、第3図に示したように、導出電極6は反対面には形成することなく一主面側のみに形成して前述のように共晶合金によって接合し、他主面は単に下地電極8(Cr)と導通電極9(Au)としてワイヤーボンディング15によって導出してもよい。
【0028】
また、一層目の下地電極8はCrとしたが、例えばTi、NiW、NiTi、NiCr等でもよく要は水晶片2と二層目の導通電極9との馴染みがよいものであればよい。また、導通電極9はAuとしたが、基本的には例えばAgやAlの導通度が良好なものであればよい。また、五層目の接合電極12はAuGeとしたが、AuやAg等であってもよく接合金属13(AuGe)と馴染みのよい金属であればよい。
【0029】
そして、接合金属はAuGeとしたが、例えばAuSi(溶融温度363℃)の適用も可能であり、基本的には無機物で溶融温度が水晶の転移温度573℃以下とした共晶合金であればよい。また、四層目の遮蔽金属11はCrとしたが、例えばNiCrであってもよく、これらは二層目の導通電極9及び五層目の接合電極12との兼ね合いから選択される。
【0030】
また、水晶振動子として説明したが、他の回路素子とともに収容して発振器等を構成した場合での適用も可能であり、本発明はこれを排除するものではない。
そして、容器本体1は凹部内に段部を設けたが段部が無くとも内底面に直接に熱圧着してもよい。また、容器本体1は平板状として凹状のカバー3を接合してもよく、これらは任意に変更できる。
【0031】
【発明の効果】
本発明は以上に説明した通りであり、基本的に共晶合金を用いた熱圧着によって水晶片を接合した表面実装振動子を得たので、有機物からの放出ガスによる特性劣化が殆どなく、高品質及び高信頼性の表面実装振動子を提供できる。そして、遮蔽電極及び拡散防止電極によって導通電極の導通抵抗を小さく維持して振動特性を良好にして、小型化及び高周波化を促進する。
【図面の簡単な説明】
【図1】 本発明の一実施例を説明する表面実装振動子の一部断面図である。
【図2】 本発明の他の実施例を説明する図で、同図(a)は表面実装振動子の一部断面図、同図(b)は水晶片の平面図である。
【図3】 本発明のさらに他の実施例を説明する図で、表面実装振動子の一部断面図である。
【図4】 従来例を説明する表面実装振動子の組立図である。
【図5】 従来例を説明する図で、同図(a)は水晶片の断面図、同図(b)は平面図である。
【符号の説明】
1 容器本体、2 水晶片、3 カバー、4 水晶端子、5 励振電極、6 導出電極、7 導電性接着剤、8 下地電極、9 導通電極、10 拡散防止電極、11 遮蔽電極、12 接合電極、13 接合金属、14 電極貫通孔、15 ワイヤーボンディング.
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface mount crystal resonator (hereinafter referred to as a surface mount resonator) as an industrial technical field, and more particularly to an electrode structure of a crystal resonator connected using a eutectic alloy.
[0002]
[Prior art]
(Background of the Invention) Surface mounted resonators are small and light, and are used as a reference source for frequency and time of mobile devices such as mobile phones. In recent years, higher reliability and higher frequency have been demanded, and due to this, a review of the holding structure and the like has been demanded.
[0003]
4 and 5 are diagrams for explaining a conventional example, FIG. 4 is an exploded view of a surface-mounted vibrator, FIG. 5 (a) is a sectional view of a crystal piece, and FIG. FIG. (B) is a plan view.
[0004]
The surface-mounted vibrator is formed by housing a crystal piece 2 in a container body 1 and covering a cover 3, and sealing the crystal piece 2. The container main body 1 is made of, for example, a concave laminated ceramic, and has a pair of metallized layers (crystal terminals) 4 as connection terminals for the crystal piece 2 on the inner bottom surface. On the outer surface (bottom surface and side surface), there are mounting electrodes (not shown) for surface mounting electrically connected to the crystal terminals 4.
[0005]
The quartz crystal piece 2 has excitation electrodes 5 on both main surfaces, and leads electrodes 6 for external connection are formed on both sides of one end through extraction electrodes. The lead-out electrodes 6 are formed by folding back to the opposite surface through the side surfaces of the corners. Each of these electrodes is formed by vapor deposition or the like from the main surface of the crystal piece 2 with the first layer being the base electrode 8 and the second layer being the conduction electrode 9. Here, the first layer (base electrode 8) is Cr, and the second layer (conduction electrode 9) is Au. Since the crystal piece 2 and Au as the conductive electrode 9 have low adhesion strength, Cr is interposed as a base electrode 8 that is familiar to them.
[0006]
Then, the lead-out electrodes 6 on both sides of the one end are fixed by the conductive adhesive 7 so as to face the crystal terminals 4 on the inner bottom surface corresponding to the lead electrodes 6. For example, a cover 3 made of metal is joined to a metal ring or metallization layer (not shown) provided on the opening end surface of the container body 1 by seam or beam welding.
[0007]
[Problems to be solved by the invention]
(Problems of the prior art) However, the surface mount resonator having the above-described configuration has the following problems due to the holding structure in which the crystal piece 2 is fixed by the conductive adhesive 7. That is, the conductive adhesive 7 is based on, for example, a silicon-based resin made of a polymer as an organic substance.
[0008]
For this reason, for example, when the conductive adhesive 7 is cured, an emitted gas is generated from the organic substance, which adheres to the crystal piece 2 and deteriorates the aging characteristics. In particular, as the frequency increases (for example, 100 MHz or more) and the crystal piece 2 becomes thinner, the influence becomes larger and the problem becomes more prominent. The same applies when the specifications are strict and high reliability is required.
[0009]
(Object of the Invention) An object of the present invention is to provide a crystal resonator which improves secular change characteristics and vibration characteristics, and promotes high frequency and high reliability.
[0010]
[Patent Document 1]
Japanese Patent Application No. 2002-138441 [0011]
[Means for Solving the Problems]
The present invention, as shown in the claims (claim 1), the electrode lead-out portion of a connection terminal is provided extending the extraction electrode from the excitation electrodes formed on both main surfaces of the crystal piece, the crystal A crystal resonator in which an electrode lead-out portion is connected to a crystal terminal of a container main body in which the crystal piece is accommodated by a eutectic alloy, and an electrode structure of the electrode lead-out portion is from a main surface of the crystal piece. The first layer is a base electrode, the second layer is a conduction electrode, the third layer is a diffusion prevention electrode, the fourth layer is a shielding electrode, the fifth layer is a junction electrode, and the first layer base electrode and the second layer conduction electrode are Extending from the excitation electrode as the same structure as the excitation electrode, the third-layer diffusion prevention electrode is made of a metal that prevents the fourth-layer shielding electrode from diffusing into the conduction electrode, and the fourth-layer Eating of the shielding electrode and the conducting electrode when melting of the five-layer junction electrodes A metal to suppress Les, the more under the eye ground electrode is a Cr or NiCr, said second layer of conductive electrodes and Au, the third layer of anti-diffusion electrode and Au, said fourth layer of shielding electrode Cr or NiCr is used, and the fifth-layer bonding electrode is AuGe.
[0012]
Delete [0013]
Delete [0014]
Delete [0015]
Delete [0016]
【Example】
FIG. 1 is a partial cross-sectional view of a surface-mounted vibrator for explaining an embodiment of the present invention. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.
[0017]
As described above, the surface-mounted vibrator is formed by housing the crystal piece 2 in the container body 1 and covering the cover 3 and sealingly sealing it. As described above, the quartz crystal piece 2 has the excitation electrodes 5 on both main surfaces, and the lead-out electrodes 6 formed by being connected and folded on both ends (see FIGS. 4 and 5).
[0018]
The lead electrode 6 has a five-layer structure, and the first base electrode 8 is Cr and the second conductive electrode 9 is Au as described above. Then, here, the diffusion preventing electrode 10 is formed as the third layer, the shielding electrode 11 is formed as the fourth layer, and the bonding electrode 12 is formed thereon as the fifth layer on the second conductive electrode 9 by vapor deposition or the like. .
[0019]
In this example, the third-layer diffusion prevention electrode 10 is Au, the fourth-layer shielding electrode 11 is Cr, and the fifth-layer bonding electrode 12 is a eutectic alloy made of AuGe. In the figure, the thickness of each layer is the same, but the Cr of the base electrode 8 is about 100 angstroms, the Au of the conductive electrode 9 is 300 angstroms or more, the Au of the diffusion preventing electrode 10 is 3000 angstroms, and the Cr of the shielding electrode 11 The junction electrode 12 is set to 2000 angstroms or more, and 4500 angstroms or more.
[0020]
In such a case, the bonding metal 13 is provided on the crystal terminal 4 of the container body 1. The bonding metal 13 is a eutectic alloy AuGe having a thickness of about 30 μm. Then, using a jig (not shown), both sides of one end of the crystal piece 2 are heated and pressed. In short, the bonding electrode 12 and the bonding metal 13, both of which are eutectic alloy AuGe, are melted by thermocompression bonding, and both ends of one end of the crystal piece 2 are electrically and mechanically connected to the crystal terminal 4.
[0021]
With such a configuration, the crystal piece 2 using the eutectic alloy AuGe is joined without using the conventional conductive adhesive, and there is almost no organic matter in the container body 1. Therefore, since the emitted gas does not adhere to the crystal piece 2, the secular change characteristic is maintained well, and the high reliability and high frequency of the surface mount vibrator are promoted.
[0022]
Further, a diffusion prevention electrode 10 (Au) and a shielding electrode 11 (Cr) are interposed between the second-layer conductive electrode 9 (Au) and the fifth-layer bonding electrode 12 (eutectic alloy AuGe). Therefore, at the time of thermocompression bonding, the molten bonding metal 13 and the bonding electrode (AuGe) 12 are blocked by the shielding electrode 11 (Cr) and prevented from being eaten without proceeding to the diffusion preventing electrode 10 and the conduction electrode 9 (Au). (Patent Document 1).
[0023]
In the case where there is no shielding electrode 11, the diffusion preventing electrode 10 and the conductive electrode 9 (Au) are attracted to the bonding metal 13 and the bonding electrode (AuGe) to cause so-called biting and peeling. This causes poor conduction. Therefore, in this embodiment, the shield electrode 11 (Cr) prevents the diffusion preventing electrode 10 and the conduction electrode 9 from being eroded, and the conduction can be reliably maintained.
[0024]
Further, here, the diffusion preventing electrode 10 (Au) is interposed between the conducting electrode 9 and the shielding electrode 11 (Cr). Therefore, Cr of the shielding electrode 11 is absorbed by the diffusion preventing electrode (Au), preventing diffusion to the conduction electrode 9 (Au) and keeping the conduction resistance small. In short, the thickness of the Au layer is increased to prevent Cr diffusion. Thereby, an increase in crystal impedance due to an increase in conduction resistance is suppressed.
[0025]
Although the thickness of the conductive electrode 9 (Au) itself may be increased, it is necessary to reduce the mass of the excitation electrode 6 so that the vibration characteristics are not hindered at high frequencies (for example, 100 MHz or higher). Therefore, the diffusion preventing electrode 10 is required separately from the conduction electrode 9.
[0026]
[Other matters]
In the above embodiment, the crystal piece 2 is described as a flat plate, but it may be as shown in FIG. That is, the conductive electrode 6 may be formed on the thick outer peripheral portion by reducing the thickness of the vibration region, and the outer peripheral portion may be held by the eutectic alloy. Here, the lead-out electrodes 6 on both sides of the one end are formed on the opposite surfaces by the electrode through holes 14, respectively.
[0027]
Further, as shown in FIG. 3, the lead-out electrode 6 is not formed on the opposite surface but is formed only on one main surface side and joined by a eutectic alloy as described above, and the other main surface is simply a base electrode. 8 (Cr) and conductive electrode 9 (Au) may be led out by wire bonding 15.
[0028]
In addition, although the first base electrode 8 is Cr, for example, Ti, NiW, NiTi, NiCr or the like may be used as long as the crystal piece 2 and the second-layer conductive electrode 9 are familiar. Further, although the conductive electrode 9 is Au, basically, for example, any material having good conductivity of Ag or Al may be used. Further, although the fifth-layer bonding electrode 12 is AuGe, it may be Au, Ag, or the like, as long as it is a metal familiar to the bonding metal 13 (AuGe).
[0029]
The bonding metal is AuGe. However, for example, AuSi (melting temperature 363 ° C.) can also be applied. Basically, it is an eutectic alloy made of an inorganic material and having a melting temperature of 573 ° C. or less. . Further, although the fourth-layer shielding metal 11 is Cr, NiCr may be used, for example, and these are selected from the balance between the second-layer conductive electrode 9 and the fifth-layer bonding electrode 12.
[0030]
Further, although described as a crystal resonator, the present invention can be applied to a case where an oscillator or the like is accommodated together with other circuit elements, and the present invention does not exclude this.
And although the container main body 1 provided the step part in the recessed part, even if there is no step part, you may carry out the thermocompression bonding directly to an inner bottom face. Moreover, the container main body 1 may join the concave cover 3 as flat form, and these can be changed arbitrarily.
[0031]
【The invention's effect】
The present invention is as described above, and basically obtained a surface-mount resonator in which a crystal piece is bonded by thermocompression bonding using a eutectic alloy. It is possible to provide a surface mount resonator with high quality and high reliability. Then, good vibration characteristics by maintaining a small conduction resistance of conductive electrodes by the shield electrode and the diffusion prevention electrode, facilitating miniaturization and high frequency.
[Brief description of the drawings]
FIG. 1 is a partial cross-sectional view of a surface-mounted vibrator for explaining an embodiment of the present invention.
FIGS. 2A and 2B are diagrams illustrating another embodiment of the present invention, in which FIG. 2A is a partial cross-sectional view of a surface-mounted vibrator, and FIG. 2B is a plan view of a crystal piece.
FIG. 3 is a diagram illustrating still another embodiment of the present invention, and is a partial cross-sectional view of a surface-mounted vibrator.
FIG. 4 is an assembly diagram of a surface-mounted vibrator for explaining a conventional example.
5A and 5B are diagrams for explaining a conventional example, in which FIG. 5A is a cross-sectional view of a crystal piece, and FIG. 5B is a plan view.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Container body, 2 Crystal piece, 3 Cover, 4 Crystal terminal, 5 Excitation electrode, 6 Derivation electrode, 7 Conductive adhesive, 8 Ground electrode, 9 Conduction electrode, 10 Diffusion prevention electrode, 11 Shielding electrode, 12 Joining electrode, 13 Bonding metal, 14 Electrode through hole, 15 Wire bonding.

Claims (1)

水晶片の両主面に形成された励振電極から引出電極を延出して接続端子としての電極導出部を設け、前記水晶片の電極導出部を共晶合金によって、前記水晶片が収容される容器本体の水晶端子に接続してなる水晶振動子であって、
前記電極導出部の電極構造は前記水晶片の主面から一層目を下地電極、二層目を導通電極、三層目を拡散防止電極、四層目を遮蔽電極、五層目を接合電極とし、
前記一層目の下地電極及び前記二層目の導通電極は前記励振電極と同一構造として前記励振電極から延出し、
前記三層目の拡散防止電極は前記四層目の遮蔽電極が前記導通電極に拡散することを防止する金属からなり、
前記四層目の遮蔽電極は前記五層目の接合電極の溶融時に前記導通電極の喰われを抑止する金属からなり、
前記一層目の下地電極はCr又はNiCrとし、前記二層目の導通電極はAuとし、前記三層目の拡散防止電極はAuとし、前記四層目の遮蔽電極はCr又はNiCrとし、前記五層目の接合電極はAuGeとしたことを特徴とする水晶振動子。
A container in which the lead-out electrode is extended from the excitation electrodes formed on both main surfaces of the crystal piece to provide an electrode lead-out portion as a connection terminal, and the crystal lead-out portion is made of a eutectic alloy. A crystal unit connected to the crystal terminal of the main body ,
The electrode structure of the electrode lead-out part is that the first layer from the main surface of the crystal piece is a base electrode, the second layer is a conduction electrode, the third layer is a diffusion prevention electrode, the fourth layer is a shielding electrode, and the fifth layer is a bonding electrode. ,
The first-layer base electrode and the second-layer conductive electrode extend from the excitation electrode as the same structure as the excitation electrode,
The third-layer diffusion prevention electrode is made of a metal that prevents the fourth-layer shielding electrode from diffusing into the conductive electrode,
The fourth-layer shielding electrode is made of a metal that suppresses biting of the conductive electrode when the fifth-layer joining electrode is melted ,
The first layer base electrode is Cr or NiCr, the second layer conductive electrode is Au, the third layer diffusion prevention electrode is Au, the fourth layer shielding electrode is Cr or NiCr, and the fifth layer A crystal resonator characterized in that the eye bonding electrode is AuGe.
JP2002364710A 2002-12-17 2002-12-17 Crystal oscillator Expired - Fee Related JP4275396B2 (en)

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JP4451219B2 (en) * 2004-06-03 2010-04-14 日本電波工業株式会社 Crystal oscillator
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