JP4445292B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP4445292B2 JP4445292B2 JP2004065496A JP2004065496A JP4445292B2 JP 4445292 B2 JP4445292 B2 JP 4445292B2 JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004065496 A JP2004065496 A JP 2004065496A JP 4445292 B2 JP4445292 B2 JP 4445292B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- photonic crystal
- emitting element
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065496A JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002032073 | 2002-02-08 | ||
JP2004065496A JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003566952A Division JP3613348B2 (ja) | 2002-02-08 | 2003-02-07 | 半導体発光素子およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004253811A JP2004253811A (ja) | 2004-09-09 |
JP2004253811A5 JP2004253811A5 (zh) | 2005-11-24 |
JP4445292B2 true JP4445292B2 (ja) | 2010-04-07 |
Family
ID=33031653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004065496A Expired - Fee Related JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Country Status (1)
Country | Link |
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JP (1) | JP4445292B2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
JP5224154B2 (ja) * | 2005-10-28 | 2013-07-03 | 日亜化学工業株式会社 | 半導体素子 |
US8155163B2 (en) | 2007-03-23 | 2012-04-10 | Sumitomo Electric Industries, Ltd. | Photonic crystal laser and method of manufacturing photonic crystal laser |
KR101341374B1 (ko) * | 2007-07-30 | 2013-12-16 | 삼성전자주식회사 | 광자결정 발광소자 및 그 제조방법 |
JP5356088B2 (ja) * | 2009-03-27 | 2013-12-04 | 古河電気工業株式会社 | 半導体レーザ、レーザ光の発生方法、およびレーザ光のスペクトル線幅の狭窄化方法 |
JP5627361B2 (ja) | 2010-09-16 | 2014-11-19 | キヤノン株式会社 | 2次元フォトニック結晶面発光レーザ |
DE112014001143B4 (de) | 2013-03-07 | 2022-09-29 | Hamamatsu Photonics K.K. | Laserelement und Laservorrichtung |
DE112014001152T5 (de) | 2013-03-07 | 2015-11-19 | Hamamatsu Photonics K.K. | Laserelement und Laservorrichtung |
WO2014175447A1 (ja) * | 2013-04-26 | 2014-10-30 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
DE112014003317T5 (de) * | 2013-07-16 | 2016-03-31 | Hamamatsu Photonics K.K. | Halbleiterlaservorrichtung |
GB201607996D0 (en) * | 2016-05-06 | 2016-06-22 | Univ Glasgow | Laser device and method for its operation |
JP7097567B2 (ja) * | 2018-02-28 | 2022-07-08 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
JP6891327B1 (ja) * | 2020-09-25 | 2021-06-18 | 浜松ホトニクス株式会社 | 光源モジュール |
DE112021000652T5 (de) * | 2020-01-20 | 2022-11-24 | Hamamatsu Photonics K.K. | Lichtquellenmodul |
WO2024024190A1 (ja) * | 2022-07-29 | 2024-02-01 | 住友電気工業株式会社 | フォトニック結晶面発光レーザおよびその製造方法 |
-
2004
- 2004-03-09 JP JP2004065496A patent/JP4445292B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004253811A (ja) | 2004-09-09 |
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