JP4437668B2 - 半導体ダイオードを使用したレーザ分光装置およびレーザ分光法 - Google Patents
半導体ダイオードを使用したレーザ分光装置およびレーザ分光法 Download PDFInfo
- Publication number
- JP4437668B2 JP4437668B2 JP2003584684A JP2003584684A JP4437668B2 JP 4437668 B2 JP4437668 B2 JP 4437668B2 JP 2003584684 A JP2003584684 A JP 2003584684A JP 2003584684 A JP2003584684 A JP 2003584684A JP 4437668 B2 JP4437668 B2 JP 4437668B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- laser
- pulse
- spectrometer
- chirp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000001307 laser spectroscopy Methods 0.000 title description 3
- 210000004027 cell Anatomy 0.000 claims description 80
- 230000003287 optical effect Effects 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 44
- 238000001514 detection method Methods 0.000 claims description 24
- 238000005259 measurement Methods 0.000 claims description 18
- 230000005855 radiation Effects 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 210000000352 storage cell Anatomy 0.000 claims 1
- 239000007789 gas Substances 0.000 description 43
- 230000003595 spectral effect Effects 0.000 description 29
- 238000010521 absorption reaction Methods 0.000 description 23
- 238000001228 spectrum Methods 0.000 description 22
- 230000002123 temporal effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- 238000000862 absorption spectrum Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000005094 computer simulation Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical group FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000012795 verification Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical group OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J3/433—Modulation spectrometry; Derivative spectrometry
- G01J3/4338—Frequency modulated spectrometry
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/0622—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/396—Type of laser source
- G01N2021/399—Diode laser
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
- G01N21/031—Multipass arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Spectrometry And Color Measurement (AREA)
- Semiconductor Lasers (AREA)
- Optical Measuring Cells (AREA)
Description
Ia=Ioexp(−αL)によって表すことができる。ここで、αは吸収係数であり、Lは光路長である。αは波数の関数であって、入射放射線が強度が低ければ、その強度にはαは無関係であることは理解されよう。
βの割合で放射された半導体ダイオードのレーザ放射線の連続的な波長をもたらす。前述したように、持続時間がマイクロセカンド以下である長方形の電流パルスに起因する高速レーザ加熱は、レーザ20が放射する各パルスについて同様であり、チャープは、短波長から長波長まで、ほぼ線形の連続したスペクトルで変化する。これは、連続スペクトル走査または波長走査と定義される。
信号路La=Ioexp(−αLa)
対照路Lb=Ioexp(−αLb)
従って、ln(Ia/Ib)=−α(La−Lb)となる。1cの装置において、両パルスの走行時間差は、波長のアップチャ−プ時間または電流/電圧駆動パルスの持続時間より少なくなるように選択される。このため、信号パルスが検知器23に到達する前に、バックグラウンド光のパルスが検知器24に到達する。上記に詳述したように、制御収集回路10は、デジタイザ12および14からの出力を記録し、それらの比からIa/Ibを提供する。図16に示す装置1cの有利な点は、図9で示す第1実施例(図9の装置1b)よりも使用する光学素子の数が少ない点にあり、例えば、対照セルを装置1cでは必要としない。これにより、分光計装置全体の大きさと重量を軽減することができる。
本発明に係る方法が多方面に利用できることを約束するものでもある。
17,18:セル 19:パルス発生器
20:レーザ 21:ビームスプリッタ
23,24:検知器 29:ビームスプリッタ
Claims (27)
- 反射素子を備える非共振光学セルへ試料気体を導入し;階段関数の電気的パルスを半導体ダイオードレーザに印加し、前記の光学セルに注入させるための連続的波長チャープをレーザに出力させ;連続的波長チャープを光学セルへ導入し;波長チャープがもたらす波長変動を波長走査として利用し;セルが発する光を検知することを包含する半導体ダイオードレーザ分光計を用いた気体検知方法において、光学セル内での光の干渉を防止するタイムディレイが、反射素子上のスポット間に起こるチャープ率を採用することをさらに包含する前記の気体検知方法。
- 半導体ダイオードレーザへ印加するパルスの持続時間が、1マイクロ秒以下で、150ナノ秒より大きい請求項1に記載の方法。
- パルスの持続時間が、駆動パルスを印加した以後、光学的出力がゼロになるまでの持続時間より短い請求項1または2に記載の方法。
- 単位時間当りの波長の変化率を変動することを包含する請求項1〜3の何れかに記載の方法。
- 単位時間当りの波長の変化率の変動が、電流/電圧駆動パルスの振幅を変化させることを含む請求項4に記載の方法。
- 波長走査の長さを調整することを含む請求項1〜5の何れかに記載の方法。
- 波長走査の長さを調整することが、電流/電圧駆動パルスの持続時間を変化させることを含む請求項6に記載の方法。
- 半導体ダイオードレーザの温度を変化させることを含む請求項1〜7の何れかに記載の方法。
- 半導体ダイオードレーザが、波長領域1μm〜14μmの放射線を出力する請求項1〜8の何れかに記載の方法。
- 半導体ダイオードレーザが、量子カスケードレーザである請求項1〜9の何れかに記載の方法。
- セルがヘリオットセルである請求項1〜10の何れかに記載の方法。
- 吸収された放射線の量が、試料を透過した放射線の振幅測定と、対照パルスの振幅測定とを利用して決定される請求項1〜11の何れかに記載の方法。
- 半導体ダイオードレーザと;いずれの端部にも反射素子を備えた試料気体収納セルと;実質的に階段関数の電気的パルスをレーザに印加し、前記光学セルに連続的な波長チャープを導入させるようにする電気的パルス発生器と;セルからの出力光を検知し、波長チャープの波長の変動を波長走査として利用する検知器とを備え、試料が吸収する放射線を測定するための半導体ダイオードレーザ分光計において、採用されるチャープ率が、光学セル内での光の干渉を防止するタイムディレイを、反射素子上のスポット間に起こさせるチャープ率である前記の半導体ダイオードレーザ分光計
- 電気的パルスの持続時間が、1マイクロ秒以下で、150ナノ秒より大きい請求項13に記載の分光計。
- チャープの単位時間当りの波長変化率を変動させる手段を備えた請求項13または14に記載の分光計。
- 前記の波長変化率の変動が、電流/電圧駆動パルスの振幅を変えることで実行できる請求項15に記載の分光計。
- 波長走査の長さを調節する手段を備える請求項13〜16の何れかに記載の分光計。
- 波長走査の長さの調節が、電気パルスの持続時間を変えることで実行できる請求項17に記載の分光計。
- 波長走査の開始波長点を変えるための手段を備える請求項13〜18の何れかに記載の分光計。
- 開始波長点の変更が、半導体ダイオードレーザ基準温度を変えることで実行できる請求項19に記載の分光計。
- 半導体ダイオードレーザの温度を変えるための手段が、熱電加熱器/冷却器であるか、レーザダイオードの電気接点に印加される電流/電圧駆動パルスの繰り返し頻度又はデューティサイクルを調節する手段であるか、電流/電圧駆動パルスのパルス振幅を調節する手段であるか、あるいはレーザダイオードの電気接点に印加される電流/電圧駆動パルスの基準DCレベルを調節する手段である請求項20に記載の分光計。
- レーザから出力される放射線を、試料に透過させる第1成分と、試料に透過させない第2成分とに分割するためのビーム分割器または類似の手段を備える請求項13〜21の何れかに記載の分光計。
- 半導体ダイオードレーザが、波長範囲1μm〜14μm範囲の放射線を放出する請求項13〜22の何れかに記載の分光計。
- 光学セルがヘリオットセルである請求項13〜23の何れかに記載の分光計。
- チャープが60GHzの周波数変動を有する請求項13〜24の何れかに記載の分光計。
- 印加パルスの持続時間が、1マイクロ秒以下で、150nsより大きい請求項13〜25の何れかに記載の分光計。
- 印加パルスの持続時間が150〜300nsの範囲にある請求項13〜25の何れかに記載の分光計。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0208100.8A GB0208100D0 (en) | 2002-04-09 | 2002-04-09 | Semiconductor diode laser spectrometer arrangement |
PCT/GB2003/001510 WO2003087787A1 (en) | 2002-04-09 | 2003-04-08 | Semiconductor diode laser spectrometer arrangement and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005522694A JP2005522694A (ja) | 2005-07-28 |
JP4437668B2 true JP4437668B2 (ja) | 2010-03-24 |
Family
ID=9934480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003584684A Expired - Lifetime JP4437668B2 (ja) | 2002-04-09 | 2003-04-08 | 半導体ダイオードを使用したレーザ分光装置およびレーザ分光法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7283243B2 (ja) |
EP (1) | EP1493017B1 (ja) |
JP (1) | JP4437668B2 (ja) |
KR (1) | KR100959625B1 (ja) |
CN (1) | CN100561196C (ja) |
AU (1) | AU2003219320B2 (ja) |
CA (1) | CA2482402C (ja) |
ES (1) | ES2392834T3 (ja) |
GB (1) | GB0208100D0 (ja) |
RU (1) | RU2313078C2 (ja) |
WO (1) | WO2003087787A1 (ja) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005002947B4 (de) * | 2005-01-21 | 2007-01-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Analyse von Fluiden |
US20070064230A1 (en) * | 2005-09-21 | 2007-03-22 | Battelle Memorial Institute | Broadband laser spectroscopy |
US20090176674A1 (en) * | 2006-01-09 | 2009-07-09 | The Procter & Gamble Company | Personal care compositions containing cationic synthetic copolymer and a detersive surfactant |
US9427391B2 (en) * | 2006-01-09 | 2016-08-30 | The Procter & Gamble Company | Personal care compositions containing cationic synthetic copolymer and a detersive surfactant |
US7574089B1 (en) * | 2006-04-10 | 2009-08-11 | Ge Homeland Protection, Inc. | Optofluidic devices and methods of using the same |
GB0623835D0 (en) * | 2006-11-29 | 2007-01-10 | Cascade Technologies Ltd | Multi mode fibre perturber |
GB0623812D0 (en) * | 2006-11-29 | 2007-01-10 | Cascade Technologies Ltd | Portal |
US7994479B2 (en) * | 2006-11-30 | 2011-08-09 | The Science And Technology Facilities Council | Infrared spectrometer |
GB0624472D0 (en) | 2006-12-07 | 2007-01-17 | Cascade Technologies Ltd | Leak detection system and method |
US7826509B2 (en) * | 2006-12-15 | 2010-11-02 | President And Fellows Of Harvard College | Broadly tunable single-mode quantum cascade laser sources and sensors |
GB0717967D0 (en) * | 2007-09-14 | 2007-10-24 | Cascade Technologies Ltd | Polarimetric hyperspectral imager |
JP4817336B2 (ja) * | 2008-02-21 | 2011-11-16 | 国立大学法人茨城大学 | テラヘルツ電磁波を用いた試料の構造分析方法およびテラヘルツ電磁波を用いた試料の構造分析装置 |
CN102066907B (zh) * | 2008-03-28 | 2014-06-25 | 株式会社堀场制作所 | 光分析计和分析计用波长稳定化激光装置 |
US20110058176A1 (en) * | 2008-11-03 | 2011-03-10 | Bruker Optics, Inc. | Spectrometers utilizing mid infrared ultra broadband high brightness light sources |
GB0919854D0 (en) * | 2009-11-12 | 2009-12-30 | Stfc Science & Technology | Detecting species in a dilute medium |
GB201004353D0 (en) * | 2010-03-16 | 2010-04-28 | Cascade Technologies Ltd | Multiple pathlength gas cell |
CN102200506B (zh) * | 2010-03-26 | 2014-06-25 | 无锡沃浦光电传感科技有限公司 | 双模远距离红外气体传感器 |
US8445850B2 (en) * | 2010-06-21 | 2013-05-21 | The United States Of America As Represented By The Administrator Of The U.S. Environmental Protection Agency | Optical remote sensing of fugitive releases |
DE102010030549B4 (de) * | 2010-06-25 | 2016-04-28 | Siemens Aktiengesellschaft | Nichtdispersiver Gasanalysator |
JP6054028B2 (ja) | 2011-02-09 | 2016-12-27 | ギガフォトン株式会社 | レーザ装置および極端紫外光生成システム |
FR2971587B1 (fr) | 2011-02-14 | 2013-10-18 | Saint Gobain | Analyse de gaz par laser |
US9373933B2 (en) | 2012-10-19 | 2016-06-21 | University of Maribor | Methods of driving laser diodes, optical wavelength sweeping apparatus, and optical measurement systems |
CN103499391B (zh) * | 2013-09-06 | 2016-08-10 | 清华大学 | 光谱测量系统 |
CN104568829B (zh) * | 2013-10-14 | 2017-04-19 | 北京信息科技大学 | 采用参考腔主动反馈补偿的光纤激光器气体检测系统 |
CN103604774B (zh) * | 2013-12-05 | 2016-08-17 | 天津大学 | 基于非线性调谐提高激光气体分析灵敏度的方法和装置 |
JP6440138B2 (ja) * | 2014-02-28 | 2018-12-19 | 国立大学法人京都大学 | レーザ装置 |
DE102014104043B4 (de) | 2014-03-24 | 2016-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multireflexionszellenanordnung |
CN107078457A (zh) * | 2014-10-28 | 2017-08-18 | 住友电气工业株式会社 | 应用光源、光调制器和波长检测器的光学模块及其组装方法 |
EP3588061B1 (en) | 2014-12-23 | 2023-04-19 | Apple Inc. | Optical inspection system and method including accounting for variations of optical path length within a sample |
WO2016170643A1 (ja) | 2015-04-23 | 2016-10-27 | ギガフォトン株式会社 | レーザ装置、及び計測装置 |
KR20170129933A (ko) * | 2015-08-21 | 2017-11-27 | 다이킨 고교 가부시키가이샤 | 적외 분광법에 의한 불소 함유 중합체의 분석 |
KR102615932B1 (ko) | 2015-09-01 | 2023-12-21 | 애플 인크. | 물질의 비접촉 감지를 위한 레퍼런스 스위치 아키텍처 |
US10495439B2 (en) | 2015-09-17 | 2019-12-03 | Carl Zeiss Meditec, Inc. | Interferometry with pulse broadened diode laser |
KR102112940B1 (ko) * | 2015-09-18 | 2020-05-19 | 애플 인크. | 기준 방식들에서의 측정 시간 분포 |
US10830660B2 (en) * | 2015-10-14 | 2020-11-10 | Cascade Technologies Holdings Limited | Leak detection of gas containers using an optical detector |
WO2017065815A1 (en) | 2015-10-17 | 2017-04-20 | General Electric Company | Gas detector and method of detection |
JP6756999B2 (ja) * | 2016-03-22 | 2020-09-16 | コニカミノルタ株式会社 | ガス測定装置 |
US10180393B2 (en) * | 2016-04-20 | 2019-01-15 | Cascade Technologies Holdings Limited | Sample cell |
CN109073462B (zh) | 2016-04-21 | 2021-09-24 | 苹果公司 | 用于参考切换的多路复用和编码 |
CN114719977A (zh) | 2016-04-21 | 2022-07-08 | 苹果公司 | 用于参考切换的光学系统 |
GB2549985B (en) | 2016-05-06 | 2020-01-08 | Ishida Europe Ltd | Container leak detection |
GB201700905D0 (en) | 2017-01-19 | 2017-03-08 | Cascade Tech Holdings Ltd | Close-Coupled Analyser |
CN106936070B (zh) * | 2017-05-11 | 2023-07-07 | 中国工程物理研究院流体物理研究所 | 一种基于量子级联激光器的全光纯频率调制系统 |
US11579080B2 (en) | 2017-09-29 | 2023-02-14 | Apple Inc. | Resolve path optical sampling architectures |
CN109596538B (zh) * | 2017-10-03 | 2023-08-25 | 株式会社堀场制作所 | 分析装置和分析方法 |
WO2019160949A1 (en) | 2018-02-13 | 2019-08-22 | Masseta Technologies Llc | Integrated photonics device having integrated edge outcouplers |
GB2585849B (en) * | 2019-07-16 | 2022-11-16 | Mirico Ltd | Spectrometer and method |
US11438486B2 (en) * | 2019-08-26 | 2022-09-06 | Qualcomm Incorporated | 3D active depth sensing with laser pulse train bursts and a gated sensor |
CN112540059A (zh) * | 2019-09-20 | 2021-03-23 | 天津科技大学 | 基于tdlas技术的乙烯检测方法 |
GB202001029D0 (en) | 2020-01-24 | 2020-03-11 | Ishida Europe Litimted | System and method for detecting breaches in containers |
GB2591510A (en) | 2020-01-31 | 2021-08-04 | Ishida Europe Ltd | Food product quality control system |
WO2022056142A1 (en) | 2020-09-09 | 2022-03-17 | Apple Inc. | Optical system for noise mitigation |
CN113466139B (zh) * | 2021-06-23 | 2022-07-19 | 武汉船舶通信研究所(中国船舶重工集团公司第七二二研究所) | 一种等臂对比式水体光学衰减系数测量装置及方法 |
WO2024090042A1 (ja) * | 2022-10-26 | 2024-05-02 | 株式会社堀場製作所 | 分析装置、レーザ素子の駆動方法、及び、分析方法 |
GB202217254D0 (en) | 2022-11-17 | 2023-01-04 | Sivers Photonics Ltd | Suspended active photonic devices |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63182550A (ja) * | 1987-01-23 | 1988-07-27 | Fujitsu Ltd | ガスセンサ |
US5636035A (en) * | 1991-09-30 | 1997-06-03 | The Trustees Of The Stevens Institute Of Technology | Method and apparatus for dual modulation laser spectroscopy |
DE4331847A1 (de) * | 1992-10-05 | 1994-04-07 | Volkswagen Ag | Absorptionsmeßvorrichtung zur Analyse eines mehrere Komponenten enthaltenden Gases |
US5901168A (en) * | 1997-05-07 | 1999-05-04 | Lucent Technologies Inc. | Article comprising an improved QC laser |
-
2002
- 2002-04-09 GB GBGB0208100.8A patent/GB0208100D0/en not_active Ceased
-
2003
- 2003-04-08 CA CA2482402A patent/CA2482402C/en not_active Expired - Lifetime
- 2003-04-08 US US10/511,041 patent/US7283243B2/en not_active Expired - Lifetime
- 2003-04-08 WO PCT/GB2003/001510 patent/WO2003087787A1/en active IP Right Grant
- 2003-04-08 JP JP2003584684A patent/JP4437668B2/ja not_active Expired - Lifetime
- 2003-04-08 ES ES03715129T patent/ES2392834T3/es not_active Expired - Lifetime
- 2003-04-08 RU RU2004132718/28A patent/RU2313078C2/ru active
- 2003-04-08 AU AU2003219320A patent/AU2003219320B2/en not_active Expired
- 2003-04-08 EP EP03715129A patent/EP1493017B1/en not_active Expired - Lifetime
- 2003-04-08 CN CNB038132591A patent/CN100561196C/zh not_active Expired - Lifetime
- 2003-04-08 KR KR1020047016047A patent/KR100959625B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20050003353A (ko) | 2005-01-10 |
EP1493017A1 (en) | 2005-01-05 |
CN1659429A (zh) | 2005-08-24 |
KR100959625B1 (ko) | 2010-05-27 |
ES2392834T3 (es) | 2012-12-14 |
US7283243B2 (en) | 2007-10-16 |
US20050157303A1 (en) | 2005-07-21 |
JP2005522694A (ja) | 2005-07-28 |
RU2004132718A (ru) | 2005-06-10 |
CA2482402A1 (en) | 2003-10-23 |
WO2003087787A8 (en) | 2003-12-31 |
GB0208100D0 (en) | 2002-05-22 |
RU2313078C2 (ru) | 2007-12-20 |
AU2003219320B2 (en) | 2007-03-22 |
EP1493017B1 (en) | 2012-07-04 |
CN100561196C (zh) | 2009-11-18 |
AU2003219320A1 (en) | 2003-10-27 |
WO2003087787A1 (en) | 2003-10-23 |
CA2482402C (en) | 2011-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4437668B2 (ja) | 半導体ダイオードを使用したレーザ分光装置およびレーザ分光法 | |
US8138477B2 (en) | THz investigation apparatus and method | |
US7259856B2 (en) | Method for the precise measurement of the wavelength of light | |
US20060262316A1 (en) | System and method for interferometric laser photoacoustic spectroscopy | |
US6775001B2 (en) | Laser-based spectrometer for use with pulsed and unstable wavelength laser sources | |
Schulz et al. | Frequency-matched cavity ring-down spectroscopy | |
Weidmann et al. | Mid-infrared trace-gas sensing with a quasi-continuous-wave Peltier-cooled distributed feedback quantum cascade laser | |
US10088370B2 (en) | High repetition rate thermometry system and method | |
CN110672554B (zh) | 一种随机振动驱动衰荡腔免标定气体浓度测量系统 | |
WO2005108939A1 (en) | Cavity ringdown spectroscopy with swept-frequency laser | |
US7248611B2 (en) | Frequency scanning pulsed laser having synchronously set subthreshold current | |
GB2418337A (en) | Terahertz imaging | |
Medhi et al. | Infrared intracavity laser absorption spectrometer | |
US11391667B2 (en) | Laser gas analyzer | |
US20200081319A1 (en) | Optical system | |
CA2997148A1 (en) | Laser gas analyzer | |
Nikodem et al. | Remote mid-infrared sensing using chirped laser dispersion spectroscopy | |
Kosterev et al. | Chemical sensors using quantum cascade lasers | |
Brunner et al. | Tunable diode laser line width and tuning measurements for gas analysis monitoring | |
Kosterev et al. | Absorption spectroscopy with quantum cascade lasers | |
RU2170922C1 (ru) | Способ определения пространственного распределения концентрации газа | |
Matharoo et al. | Smart spectroscopy sensors: II. Narrow-band laser systems | |
Kozlov et al. | A route instrument for measuring the concentration of gases based on a two-wavelength semiconductor laser | |
Sinitsa | Spectroscopy: Intracavity Laser | |
Awtry et al. | Development of an enhanced cavity absorption sensor for air monitoring |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090417 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090527 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090928 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20091119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091209 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091224 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130115 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4437668 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130115 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130115 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
EXPY | Cancellation because of completion of term |