JP4434749B2 - 電場を印加することによりガス感知特性を制御する微細構造化されたガスセンサー - Google Patents
電場を印加することによりガス感知特性を制御する微細構造化されたガスセンサー Download PDFInfo
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- JP4434749B2 JP4434749B2 JP2003575095A JP2003575095A JP4434749B2 JP 4434749 B2 JP4434749 B2 JP 4434749B2 JP 2003575095 A JP2003575095 A JP 2003575095A JP 2003575095 A JP2003575095 A JP 2003575095A JP 4434749 B2 JP4434749 B2 JP 4434749B2
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- 239000004065 semiconductor Substances 0.000 claims description 47
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- 239000007789 gas Substances 0.000 description 76
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- 239000000758 substrate Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229910006404 SnO 2 Inorganic materials 0.000 description 7
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- 238000001179 sorption measurement Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/416—Systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
- G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
Description
[1] Williams D.: Semiconducting oxides as gas-sensitive resistors, Sensors and Actuators B: Chemical B 57 (1-2) (1999) 1-16.
[2] "On-chip thermally isolated hot-plate structure" A. Gotz, C. Cane, H. Bottner, K.Seibert, German Patent Num. DE19944410.2.
[3] I.Simon, N. Barsan, M.Bauer, U. Weimar: Micromachined metal oxide gas sensors: opportunities to improve sensor performance, Sensors and Actuators B 73 (2001) 1-26.
[4] Geistlinger H.: Electron theory of thin-film gas sensors, Sens.&Act. B 17 (1993) 47-60.
[5] T. Doll, M. Bogner, A. Fuchs, I. Eisele, Design and Fabrication of HSGFET Gas Sensors, Micro System Technologies 96 Proceedings.
[6] Lundstrom, M.S. Shivaraman, L. Lundkvist, A hydrogen-sensitive MOS field-effect transistor, Appl. Phys. Lett. 26 1975 55-57.
[7] Weisz P.B.: Effects of electronic transfer between adsobate an solid on chemisorption and catalysis, Journal Chemical Physics, Vol 21, 1531-1538 (1953).
[8] Wolkenstein T.: Electronic Procsses on Semiconductor Surfaces during Chemisorption, Consultant Bureau, New York & London, 1991.
[9] Hoenig, Lane, Oxygen an ZnO, Surface Science 11 (1968).
[10]W. Hellmich, G. Muller und G. Krotz; Verfahren und Vorichtung zur Bestimmung spezifischer Gas- und Ionenkonzentrationen, Deutsche Patentanmeldung 1995.
[11]U. Storm, O. Bartels and J. Binder, A resistive gas sensor with elimination and utilization of parasitic electric fields, Sensors and Actuators B: Chemical 77 (1-2) (2001) pp. 529-533.
[12]E. Comini, A. Cristalli, G. Faglia and G. Sberveglieri, Light enhanced gas sensing properties of indium oxide and tin dioxide sensors, Sensors and Actuators B: Chemical 65 (1-3) (2000) pp. 260-263.
[13]L.I. Popova, S.K. Andreev, V.K. Gueorguiev, N.D. Stoyanov, Voltage dependence gas-sensing behavior of SnO2 -gate FETs, Sens. Actuators, B: Chem. 19 1994 543-545.
このガスセンサーの実施態様は、その引用形式請求項に記載されている。
本発明は、ガス感知性の半導体材料をベースに機能するガスセンサーに関する。抵抗層中の抵抗変化だけを2つの電極により読み取る形式の半導体材料からなる公知のガスセンサーとは反対に、本発明によるセンサーの場合には、まず最初に少なくとも1つの、有利には複数の電極が、選択性制御のためにガスセンサーの半導体本体内部に存在する。この場合に、この一つ又は複数の他の電極は、抵抗層の下側に存在し、かつこの抵抗層から絶縁層により隔てられている。この1つ又は複数の他の電極は、半導体に作用する電場の入力結合のために用いられる。この場合に、感知層のガス反応に関する電場の影響が利用される。このために、ガスセンサーの半導体本体中のフィールド電極を介して入力される電場は、ガス感知性の層のガスに向かう側の表面上にまで作用する。つまり、ゲート電極上に配置されている層は電場を遮蔽してはならない。半導体の場合の遮蔽長についての尺度は、デバイ長LD である。本発明の場合には、抵抗層と1つ又は複数の他の電極の間に存在する絶縁層の厚さが、少なくともこのデバイ長以下に選択される。
この場合、デバイ長LDは次のように定義される:
Tは温度1173.15[K](900[℃]+273.15)を表し、
εは材料依存性の比誘電率を表し、
ε0は誘電率を表し、
kはボルツマン定数を表し、
Nは電荷担体濃度を表し、
qは電気素量を表す。]
先行技術に対する次の改善及び利点は、本発明によるガスセンサーを用いて達成される:
常用のガスセンサーは高温(250〜900℃)で稼働される(理由:吸収の影響、上記参照)。本発明によるこの構成を用いて、稼働温度を200℃より下の値に低減することができる。
低い稼働温度のこの利点は、このセンサーチップにCMOS−評価電子回路の組み込むことが可能であることにより更に明らかになる。
上記したようなこのセンサー構造は、組込型センサーとして電気吸収効果を利用することにより稼働される(線量計)。
吸着したガスの電気的脱着の可能性は、感知層の表面の著しく正の電場により排除することができる。このようにして、このセンサーの出発状態(ベースライン−リセット)が稼働の進行時に回復される。
センサーの温度バリエーションとフィールド制御との組み合わせも可能である。
薄層トランジスタの線状/活性領域での制御可能なセンサーの別の種類の稼働が可能である。
図1は、本発明によるガス感知性センサーの作動方式の原理を示す。
図2は、半導体本体中に存在する唯一のフィールド電極を備えたガスセンサーの第1の実施態様を示す。
図3は半導体本体中に存在する多数のフィールド電極を備えたガスセンサーの第2の実施態様を示す。
図4は、制御電子回路を備えたCMOS−TFT−ガスセンサーの断面図を示す。
半導体の場合のシールド長についての尺度は、既に述べたデバイ長LDである
このような相互に隔てられたマイクロ電極の使用は次の利点がある。半導体層のこのガス感知特性は、ガス感知層4の表面電位、ひいてはガスに向かう側の表面のフェルミ準位の状態に依存する。この効果はこの場合に感受性制御及び選択性制御のために利用される。この効果を最適に利用するために、ガス感知層の半導体表面の全体にわたり一定の電位を示すのが望ましい。
Claims (9)
- 半導体本体を備えた組込型ガスセンサーであって、前記の半導体本体上に、電極(5)と接触したガス感知性の抵抗層(4)が配置されていて、前記のガス感知性の抵抗層(4)の下に絶縁層(3)により隔てられた少なくとも1つのフィールド電極(2;6)が配置されている形式のものにおいて、前記の絶縁層(3)は、前記の絶縁層(3)に相当する次の式
Tは温度1173.15[K](900[℃]+273.15)を表し、
εは材料依存性の比誘電率を表し、
ε0 は誘電率を表し、
kはボルツマン定数を表し、
Nは電荷担体濃度を表し、
qは電気素量を表す]
のデバイ長LD と少なくとも等しいか又はそれ以下の厚さを有することを特徴とする、組込型ガスセンサー。 - フィールド電極として、複数の微細構造化されたフィールド電極(6)が設けられていることを特徴とする、請求項1記載の組込型ガスセンサー。
- 微細構造化されたフィールド電極(6)のそれぞれが個別に制御可能であることを特徴とする、請求項1記載の組込型ガスセンサー。
- 半導体本体中に1つ又は複数の加熱電極が組み込まれていることを特徴とする、請求項1記載の組込型ガスセンサー。
- 半導体本体中に、このガスセンサー用の1つの制御電子回路が一体式に組み込まれていることを特徴とする、請求項1又は2記載の組込型ガスセンサー。
- この制御電子回路が温度制御のために設けられていることを特徴とする、請求項3記載の組込型ガスセンサー。
- ガス感知層(4)の厚さが、このガス感知層のデバイ長よりも最大で100倍大きいことを特徴とする、請求項1から3までのいずれか1項記載の組込型ガスセンサー。
- 絶縁層(3)は電場を遮蔽しないことを特徴とする、請求項1から7までのいずれか1項記載の組込型ガスセンサー。
- フィールド電極(2;6)を介して入力される電場は、ガス感知性の抵抗層(4)のガスに向かう側の表面上にまで作用することを特徴とする、請求項1から8までのいずれか1項記載の組込型ガスセンサー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10210819A DE10210819B4 (de) | 2002-03-12 | 2002-03-12 | Mikrostrukturierter Gassensor mit Steuerung der gassensitiven Eigenschaften durch Anlegen eines elektrischen Feldes |
PCT/EP2003/002544 WO2003076921A2 (de) | 2002-03-12 | 2003-03-12 | Mikrostrukturierter gassensor mit steuerung der gassensitiven eigenschaften durch anlegen eines elektrischen feldes |
Publications (2)
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JP2005530984A JP2005530984A (ja) | 2005-10-13 |
JP4434749B2 true JP4434749B2 (ja) | 2010-03-17 |
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JP2003575095A Expired - Lifetime JP4434749B2 (ja) | 2002-03-12 | 2003-03-12 | 電場を印加することによりガス感知特性を制御する微細構造化されたガスセンサー |
Country Status (7)
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US (1) | US20050235735A1 (ja) |
EP (1) | EP1483571B1 (ja) |
JP (1) | JP4434749B2 (ja) |
KR (1) | KR20040111397A (ja) |
AU (1) | AU2003223962A1 (ja) |
DE (2) | DE10210819B4 (ja) |
WO (1) | WO2003076921A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008122390A1 (de) * | 2007-04-05 | 2008-10-16 | Micronas Gmbh | Feuchtesensor und verfahren zum messen der feuchte eines gasförmigen mediums |
DE102007059652A1 (de) * | 2007-12-10 | 2009-06-18 | Eads Deutschland Gmbh | Gassensor mit einer verbesserten Selektivität |
WO2009076644A2 (en) | 2007-12-12 | 2009-06-18 | University Of Florida Research Foundation Inc. | Electric-field enhanced performance in catalysis and solid-state devices involving gases |
US8739604B2 (en) * | 2007-12-20 | 2014-06-03 | Amphenol Thermometrics, Inc. | Gas sensor and method of making |
US20090218235A1 (en) * | 2007-12-26 | 2009-09-03 | Mcdonald Robert C | Gas sensor |
DE102009007966B4 (de) * | 2009-02-06 | 2011-06-30 | EADS Deutschland GmbH, 85521 | Sensorvorrichtung |
DE102009045475B4 (de) * | 2009-10-08 | 2023-06-29 | Robert Bosch Gmbh | Gassensitive Halbleitervorrichtung sowie deren Verwendung |
US9134270B2 (en) * | 2010-03-25 | 2015-09-15 | Stichting Imec Nederland | Amorphous thin film for sensing |
US8453494B2 (en) * | 2010-09-13 | 2013-06-04 | National Semiconductor Corporation | Gas detector that utilizes an electric field to assist in the collection and removal of gas molecules |
EP2490012A1 (en) * | 2011-02-16 | 2012-08-22 | Stichting IMEC Nederland | Sensor and method for sensing of at least one analyte comprising using such sensor |
EP2808675A1 (en) * | 2013-05-31 | 2014-12-03 | Sensirion AG | Integrated metal oxide chemical sensor |
US10203302B2 (en) * | 2015-08-13 | 2019-02-12 | Carrier Corporation | State of health monitoring and restoration of electrochemical sensor |
DE102015222315A1 (de) * | 2015-11-12 | 2017-05-18 | Robert Bosch Gmbh | Gassensor und Verfahren zur Detektion eines Gases |
US10914702B2 (en) | 2016-11-23 | 2021-02-09 | Robert Bosch Gmbh | Gas sensor and method for detecting a gas |
CN109142875B (zh) * | 2018-09-30 | 2021-08-10 | 西南石油大学 | 一种利用数字岩心获取致密砂岩岩石电学特性的方法 |
TWI673493B (zh) * | 2018-10-26 | 2019-10-01 | 國立交通大學 | 氣體感測器 |
CN111678953B (zh) * | 2020-06-03 | 2023-04-28 | 哈尔滨理工大学 | 一种基于黑磷量子点的电阻型气敏传感器的制备方法 |
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US5140393A (en) * | 1985-10-08 | 1992-08-18 | Sharp Kabushiki Kaisha | Sensor device |
DE59004506D1 (de) * | 1989-11-04 | 1994-03-17 | Dornier Gmbh | Selektiver Gassensor. |
DE4442396A1 (de) * | 1994-11-29 | 1996-05-30 | Martin Hausner | Vorrichtung und Verfahren zur Steuerung der Selektivität von gassensitiven chemischen Verbindungen über externe Potentiale |
DE19613274C2 (de) * | 1996-04-03 | 2002-11-21 | Daimlerchrysler Aerospace Ag | Verfahren und Vorrichtung zur Bestimmung spezifischer Gas- oder Ionenkonzentrationen |
GB2321336B (en) * | 1997-01-15 | 2001-07-25 | Univ Warwick | Gas-sensing semiconductor devices |
US6294401B1 (en) * | 1998-08-19 | 2001-09-25 | Massachusetts Institute Of Technology | Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
DE19944410C2 (de) * | 1999-09-16 | 2001-09-20 | Fraunhofer Ges Forschung | Vorrichtung zur Halterung einer zu heizenden Mikrostruktur und Verfahren zur Herstellung der Vorrichtung |
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2002
- 2002-03-12 DE DE10210819A patent/DE10210819B4/de not_active Expired - Fee Related
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2003
- 2003-03-12 AU AU2003223962A patent/AU2003223962A1/en not_active Abandoned
- 2003-03-12 EP EP03720328A patent/EP1483571B1/de not_active Expired - Lifetime
- 2003-03-12 DE DE50312156T patent/DE50312156D1/de not_active Expired - Lifetime
- 2003-03-12 US US10/507,054 patent/US20050235735A1/en not_active Abandoned
- 2003-03-12 KR KR10-2004-7014279A patent/KR20040111397A/ko not_active Application Discontinuation
- 2003-03-12 JP JP2003575095A patent/JP4434749B2/ja not_active Expired - Lifetime
- 2003-03-12 WO PCT/EP2003/002544 patent/WO2003076921A2/de active Application Filing
Also Published As
Publication number | Publication date |
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DE10210819A1 (de) | 2003-10-16 |
WO2003076921A3 (de) | 2004-03-25 |
WO2003076921A2 (de) | 2003-09-18 |
KR20040111397A (ko) | 2004-12-31 |
US20050235735A1 (en) | 2005-10-27 |
AU2003223962A1 (en) | 2003-09-22 |
AU2003223962A8 (en) | 2003-09-22 |
DE10210819B4 (de) | 2004-04-15 |
EP1483571B1 (de) | 2009-11-25 |
DE50312156D1 (de) | 2010-01-07 |
EP1483571A2 (de) | 2004-12-08 |
JP2005530984A (ja) | 2005-10-13 |
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