JP4431193B2 - 絶縁型大電力用半導体装置 - Google Patents
絶縁型大電力用半導体装置 Download PDFInfo
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- JP4431193B2 JP4431193B2 JP2006167439A JP2006167439A JP4431193B2 JP 4431193 B2 JP4431193 B2 JP 4431193B2 JP 2006167439 A JP2006167439 A JP 2006167439A JP 2006167439 A JP2006167439 A JP 2006167439A JP 4431193 B2 JP4431193 B2 JP 4431193B2
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- Prior art keywords
- power semiconductor
- semiconductor device
- high power
- tie bar
- insulated high
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
1a 載置部
1a1 上面
1a2 前側面
1a3 後側面
1a4 左側面
1a5 右側面
1a6 下面
1c フランジ部
1e1 タイバー部
1e2 タイバー部
1e3 タイバー部
1e4 タイバー部
1g フレーム部
2 PPS樹脂成形体
2a 上面
2b 前側面
2c 後側面
2d 左側面
2e 右側面
2f 下面
2g ねじ穴
3 大電力用半導体素子
Claims (11)
- 大電力用半導体素子を載置するための載置部を有するリードフレームをPPS樹脂によってインサート成形した絶縁型大電力用半導体装置において、前記載置部の前側面からPPS樹脂成形体の前側面の側に延びている第1タイバー部と、前記載置部の後側面から前記PPS樹脂成形体の後側面の側に延びている第2タイバー部と、前記載置部の左側面または右側面から前記PPS樹脂成形体の左側面または右側面の側に延びている第3タイバー部とを前記リードフレームに設け、前記載置部の上面を前記PPS樹脂成形体の上面よりも上側に配置し、前記載置部の厚さを前記第1タイバー部、前記第2タイバー部、および、前記第3タイバー部の厚さよりも厚くしたことを特徴とする絶縁型大電力用半導体装置。
- 前記リードフレームをPPS樹脂によってインサート成形した後に、前記載置部上に前記大電力用半導体素子を載置することを特徴とする請求項1に記載の絶縁型大電力用半導体装置。
- 前記載置部の下面よりも下側に0.05〜1.0mmの厚さのPPS樹脂層を配置したことを特徴とする請求項2に記載の絶縁型大電力用半導体装置。
- 前記大電力用半導体素子をゲル状充填材によって封止することを特徴とする請求項3に記載の絶縁型大電力用半導体装置。
- 前記第1タイバー部、前記第2タイバー部、および、前記第3タイバー部の上面を前記PPS樹脂成形体の上面よりも下側に配置すると共に、前記第1タイバー部、前記第2タイバー部、および、前記第3タイバー部の下面を前記PPS樹脂成形体の下面よりも上側に配置したことを特徴とする請求項4に記載の絶縁型大電力用半導体装置。
- 前記載置部の前側面、後側面、左側面および右側面にフランジ部を形成し、前記第1タイバー部、前記第2タイバー部、および、前記第3タイバー部を前記フランジ部から延ばしたことを特徴とする請求項5に記載の絶縁型大電力用半導体装置。
- 前記載置部の上面のうち、前記大電力用半導体素子が載置される部分と外部導出端子が載置される部分との間に溝を形成したことを特徴とする請求項6に記載の絶縁型大電力用半導体装置。
- 前記載置部の下面と、前記第1タイバー部、前記第2タイバー部、および、前記第3タイバー部の根元部分の下面と、前記フランジ部の下面とを同じ高さに配置したことを特徴とする請求項7に記載の絶縁型大電力用半導体装置。
- PPS樹脂によって前記載置部の下側にヒートスプレッダをインサート成形したことを特徴とする請求項1〜8のいずれか一項に記載の絶縁型大電力用半導体装置。
- 前記ヒートスプレッダの上面に溝を形成したことを特徴とする請求項9に記載の絶縁型大電力用半導体装置。
- 前記ヒートスプレッダの下面に溝を形成したことを特徴とする請求項10に記載の絶縁型大電力用半導体装置。
Priority Applications (1)
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JP2006167439A JP4431193B2 (ja) | 2006-06-16 | 2006-06-16 | 絶縁型大電力用半導体装置 |
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JP2006167439A JP4431193B2 (ja) | 2006-06-16 | 2006-06-16 | 絶縁型大電力用半導体装置 |
Publications (2)
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JP2007335728A JP2007335728A (ja) | 2007-12-27 |
JP4431193B2 true JP4431193B2 (ja) | 2010-03-10 |
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JP2006167439A Expired - Fee Related JP4431193B2 (ja) | 2006-06-16 | 2006-06-16 | 絶縁型大電力用半導体装置 |
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Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216179A (ja) * | 1993-01-21 | 1994-08-05 | Hitachi Ltd | 半導体装置の製造方法およびその製造に用いるリードフレームならびにトランスファモールド型 |
JP2000133897A (ja) * | 1998-10-27 | 2000-05-12 | Matsushita Electric Ind Co Ltd | 樹脂成形基板 |
JP3918724B2 (ja) * | 2002-11-28 | 2007-05-23 | トヨタ自動車株式会社 | ワイヤが接合されている半導体装置の製造方法 |
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