JP4425194B2 - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
JP4425194B2
JP4425194B2 JP2005237065A JP2005237065A JP4425194B2 JP 4425194 B2 JP4425194 B2 JP 4425194B2 JP 2005237065 A JP2005237065 A JP 2005237065A JP 2005237065 A JP2005237065 A JP 2005237065A JP 4425194 B2 JP4425194 B2 JP 4425194B2
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Japan
Prior art keywords
substrate
film
oxygen
nitrogen
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005237065A
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English (en)
Japanese (ja)
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JP2007051327A (ja
JP2007051327A5 (enExample
Inventor
嘉宏 横田
信之 川上
和志 林
武史 橘
宏司 小橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
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Kobe Steel Ltd
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Priority to JP2005237065A priority Critical patent/JP4425194B2/ja
Publication of JP2007051327A publication Critical patent/JP2007051327A/ja
Publication of JP2007051327A5 publication Critical patent/JP2007051327A5/ja
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Publication of JP4425194B2 publication Critical patent/JP4425194B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005237065A 2005-08-18 2005-08-18 成膜方法 Expired - Fee Related JP4425194B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005237065A JP4425194B2 (ja) 2005-08-18 2005-08-18 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005237065A JP4425194B2 (ja) 2005-08-18 2005-08-18 成膜方法

Publications (3)

Publication Number Publication Date
JP2007051327A JP2007051327A (ja) 2007-03-01
JP2007051327A5 JP2007051327A5 (enExample) 2007-12-20
JP4425194B2 true JP4425194B2 (ja) 2010-03-03

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ID=37915967

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JP2005237065A Expired - Fee Related JP4425194B2 (ja) 2005-08-18 2005-08-18 成膜方法

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JP (1) JP4425194B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5042006B2 (ja) * 2007-12-25 2012-10-03 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ
JP5095562B2 (ja) * 2008-09-05 2012-12-12 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ及びその作製方法
JP4854794B2 (ja) * 2010-03-18 2012-01-18 三井造船株式会社 薄膜形成装置
FR2984595B1 (fr) * 2011-12-20 2014-02-14 Centre Nat Rech Scient Procede de fabrication d'un empilement mos sur un substrat en diamant
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
US9238349B2 (en) 2013-08-12 2016-01-19 The United States Of America, As Represented By The Secretary Of The Navy Thin diamond film bonding providing low vapor pressure at high temperature
JP6031146B2 (ja) * 2014-03-26 2016-11-24 ツィンファ ユニバーシティ ナノチューブフィルム及びその製造方法
CA2992156A1 (en) 2015-07-13 2017-01-16 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
CA2992154A1 (en) 2015-07-13 2017-01-19 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors
US10714337B2 (en) * 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
JP6717470B2 (ja) * 2016-07-01 2020-07-01 国立研究開発法人産業技術総合研究所 ダイヤモンド半導体装置及びその製造方法
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
JPWO2022145291A1 (enExample) * 2020-12-28 2022-07-07
JP7039085B1 (ja) * 2021-08-30 2022-03-22 株式会社クリエイティブコーティングス 成膜装置
JP7776173B1 (ja) * 2024-12-24 2025-11-26 国立大学法人佐賀大学 ダイヤモンド基板上の絶縁膜の製造装置および製造方法

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