JP4413050B2 - 板状半導体、それを用いた太陽電池および板状半導体製造用下地板 - Google Patents

板状半導体、それを用いた太陽電池および板状半導体製造用下地板 Download PDF

Info

Publication number
JP4413050B2
JP4413050B2 JP2004080099A JP2004080099A JP4413050B2 JP 4413050 B2 JP4413050 B2 JP 4413050B2 JP 2004080099 A JP2004080099 A JP 2004080099A JP 2004080099 A JP2004080099 A JP 2004080099A JP 4413050 B2 JP4413050 B2 JP 4413050B2
Authority
JP
Japan
Prior art keywords
plate
semiconductor
base plate
main surface
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004080099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005268587A (ja
JP2005268587A5 (https=
Inventor
達也 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2004080099A priority Critical patent/JP4413050B2/ja
Publication of JP2005268587A publication Critical patent/JP2005268587A/ja
Publication of JP2005268587A5 publication Critical patent/JP2005268587A5/ja
Application granted granted Critical
Publication of JP4413050B2 publication Critical patent/JP4413050B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP2004080099A 2004-03-19 2004-03-19 板状半導体、それを用いた太陽電池および板状半導体製造用下地板 Expired - Fee Related JP4413050B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004080099A JP4413050B2 (ja) 2004-03-19 2004-03-19 板状半導体、それを用いた太陽電池および板状半導体製造用下地板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004080099A JP4413050B2 (ja) 2004-03-19 2004-03-19 板状半導体、それを用いた太陽電池および板状半導体製造用下地板

Publications (3)

Publication Number Publication Date
JP2005268587A JP2005268587A (ja) 2005-09-29
JP2005268587A5 JP2005268587A5 (https=) 2006-08-24
JP4413050B2 true JP4413050B2 (ja) 2010-02-10

Family

ID=35092805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004080099A Expired - Fee Related JP4413050B2 (ja) 2004-03-19 2004-03-19 板状半導体、それを用いた太陽電池および板状半導体製造用下地板

Country Status (1)

Country Link
JP (1) JP4413050B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3138130B1 (en) * 2014-04-30 2021-02-24 1366 Technologies Inc. Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions

Also Published As

Publication number Publication date
JP2005268587A (ja) 2005-09-29

Similar Documents

Publication Publication Date Title
CN100444409C (zh) 硅板及其生产方法和太阳能电池
US9133063B2 (en) Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal
JPH107493A (ja) シリコン半導体基板および太陽電池用基板の製造方法
JP4011335B2 (ja) 固相シートの製造方法
JP4413050B2 (ja) 板状半導体、それを用いた太陽電池および板状半導体製造用下地板
JP4115232B2 (ja) 板状シリコン、板状シリコンの製造方法、板状シリコンの製造用基板および太陽電池
JP5213037B2 (ja) 半導体の製造方法および半導体製造装置
JP5133848B2 (ja) 下地板製造方法ならびに下地板
JP4282278B2 (ja) 基板、その基板を用いた板状体の製造方法、板状体およびその板状体から作製した太陽電池
JP4188725B2 (ja) 板状シリコンの製造方法、板状シリコン製造用下地板、板状シリコンおよび該板状シリコンを用いた太陽電池
JP4134036B2 (ja) 板状シリコン、板状シリコンの製造方法および板状シリコン製造用基板
JP4282492B2 (ja) 板状シリコンおよびその製造方法ならびに板状シリコン製造用下地板、ならびに太陽電池
JP2005035814A (ja) 薄板の製造方法および太陽電池
JP2004319621A (ja) 基板、板状体およびその製造方法、および板状体から作製した太陽電池
JP2006062928A (ja) 半導体基板およびその製造方法、ならびに該半導体基板を用いた光電変換素子
JP5131860B2 (ja) シリコンシートおよび太陽電池
JP2004106394A (ja) 板状シリコンの切断方法、切断された板状シリコン、およびこれを用いて作製された太陽電池
JP4434837B2 (ja) 太陽電池
JP5030102B2 (ja) シート製造方法およびシート製造用基板
JP4043498B2 (ja) 固相シートの製造方法
JP2004277239A (ja) 板状シリコンの製造方法、板状シリコン及び太陽電池
CN106794993B (zh) 多晶硅锭制造方法、多晶硅锭的用途的制造方法和多晶硅锭
JP2007095972A (ja) 太陽電池用シリコン基板およびその製造方法
JP2004161583A (ja) 薄板の製造方法および太陽電池
JP2004262732A (ja) 板状シリコン製造用基板、板状シリコンの製造方法および板状シリコンを用いた太陽電池

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060707

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060707

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090519

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090519

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090908

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091016

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091117

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees