JP4404620B2 - 基板処理装置および半導体装置の製造方法 - Google Patents

基板処理装置および半導体装置の製造方法 Download PDF

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Publication number
JP4404620B2
JP4404620B2 JP2003425327A JP2003425327A JP4404620B2 JP 4404620 B2 JP4404620 B2 JP 4404620B2 JP 2003425327 A JP2003425327 A JP 2003425327A JP 2003425327 A JP2003425327 A JP 2003425327A JP 4404620 B2 JP4404620 B2 JP 4404620B2
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Japan
Prior art keywords
cooling gas
ceiling
cooling air
cooling
process tube
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Expired - Fee Related
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JP2003425327A
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English (en)
Japanese (ja)
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JP2005183823A (ja
JP2005183823A5 (enExample
Inventor
威憲 岡
真一 島田
敏光 宮田
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2003425327A priority Critical patent/JP4404620B2/ja
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Publication of JP2005183823A5 publication Critical patent/JP2005183823A5/ja
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JP2003425327A 2003-12-22 2003-12-22 基板処理装置および半導体装置の製造方法 Expired - Fee Related JP4404620B2 (ja)

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JP2003425327A JP4404620B2 (ja) 2003-12-22 2003-12-22 基板処理装置および半導体装置の製造方法

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JP2003425327A JP4404620B2 (ja) 2003-12-22 2003-12-22 基板処理装置および半導体装置の製造方法

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JP2006331465A Division JP4495717B2 (ja) 2006-12-08 2006-12-08 基板処理装置及び半導体装置の製造方法

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JP2005183823A JP2005183823A (ja) 2005-07-07
JP2005183823A5 JP2005183823A5 (enExample) 2007-02-01
JP4404620B2 true JP4404620B2 (ja) 2010-01-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10007185B2 (en) 2016-01-05 2018-06-26 Samsung Electronics Co., Ltd. Electron beam lithography method and apparatus

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4603523B2 (ja) 2006-10-06 2010-12-22 Ｎｅｃディスプレイソリューションズ株式会社 ランプユニットおよびそれを用いたプロジェクタ
KR100932965B1 (ko) * 2007-02-09 2009-12-21 가부시키가이샤 히다치 고쿠사이 덴키 단열 구조체, 가열 장치, 가열 시스템, 기판 처리 장치 및반도체 장치의 제조 방법
JP5169055B2 (ja) * 2007-07-30 2013-03-27 ウシオ電機株式会社 半導体ウエハ加熱処理装置
KR20090057729A (ko) * 2007-12-03 2009-06-08 에이피시스템 주식회사 급속열처리장치의 히터블록
WO2012091222A1 (ko) * 2010-12-27 2012-07-05 국제엘렉트릭코리아 주식회사 발열체 및 그것을 갖는 열처리 장치
JP5274696B2 (ja) * 2012-07-12 2013-08-28 株式会社日立国際電気 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法
EP2735544B1 (en) 2012-11-27 2020-09-30 Ulusal Bor Arastirma Enstitusu (Boren) A reactor designed for chemical vapor deposition method and method of producing elemental boron and advanced ceramic powders with this reactor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8801785U1 (de) * 1988-02-11 1988-11-10 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
JPH07115066A (ja) * 1993-10-15 1995-05-02 Toshiba Corp 半導体熱処理装置
JPH08181082A (ja) * 1994-12-22 1996-07-12 Touyoko Kagaku Kk 縦型高速熱処理装置
JPH09190982A (ja) * 1996-01-11 1997-07-22 Toshiba Corp 半導体製造装置
JP2001250786A (ja) * 2000-03-06 2001-09-14 Hitachi Kokusai Electric Inc 半導体製造装置
JP2001257172A (ja) * 2000-03-09 2001-09-21 Hitachi Kokusai Electric Inc 半導体製造装置
JP3912208B2 (ja) * 2002-02-28 2007-05-09 東京エレクトロン株式会社 熱処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10007185B2 (en) 2016-01-05 2018-06-26 Samsung Electronics Co., Ltd. Electron beam lithography method and apparatus

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