JP4402529B2 - 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法 - Google Patents

荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4402529B2
JP4402529B2 JP2004194773A JP2004194773A JP4402529B2 JP 4402529 B2 JP4402529 B2 JP 4402529B2 JP 2004194773 A JP2004194773 A JP 2004194773A JP 2004194773 A JP2004194773 A JP 2004194773A JP 4402529 B2 JP4402529 B2 JP 4402529B2
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charged particle
particle beam
pixel
pattern
command value
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Japanese (ja)
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JP2006019437A5 (enExample
JP2006019437A (ja
Inventor
真人 村木
正道 桑原
孝 前田
勇 瀬戸
知之 森田
晴夫 依田
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Publication of JP2006019437A5 publication Critical patent/JP2006019437A5/ja
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JP2004194773A 2004-06-30 2004-06-30 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法 Expired - Fee Related JP4402529B2 (ja)

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JP2004194773A JP4402529B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法

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JP2004194773A JP4402529B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法

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JP2006019437A JP2006019437A (ja) 2006-01-19
JP2006019437A5 JP2006019437A5 (enExample) 2007-08-16
JP4402529B2 true JP4402529B2 (ja) 2010-01-20

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5116996B2 (ja) * 2006-06-20 2013-01-09 キヤノン株式会社 荷電粒子線描画方法、露光装置、及びデバイス製造方法

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