JP4401834B2 - Exposure apparatus and alignment method - Google Patents
Exposure apparatus and alignment method Download PDFInfo
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- JP4401834B2 JP4401834B2 JP2004084615A JP2004084615A JP4401834B2 JP 4401834 B2 JP4401834 B2 JP 4401834B2 JP 2004084615 A JP2004084615 A JP 2004084615A JP 2004084615 A JP2004084615 A JP 2004084615A JP 4401834 B2 JP4401834 B2 JP 4401834B2
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- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 48
- 238000004364 calculation method Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 7
- 230000005484 gravity Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
この発明は、露光装置及び位置合わせ方法に関する。 The present invention relates to an exposure apparatus and an alignment method.
プリント配線基板は、近年小型化と細密化が進んでおり、半導体製造の場合と同様に露光装置を用いて基板上に回路等を形成するフォトリソグラフィ法を用いて製造されている。即ちフォトレジストなどの感光材料を塗布した基板表面に所定のパターンを露光装置により感光焼き付けし、その後エッチング工程により基板上にパターンを形成して、プリント配線基板を製造することが行われている。 In recent years, printed wiring boards have been miniaturized and miniaturized, and are manufactured using a photolithographic method in which a circuit or the like is formed on a substrate using an exposure apparatus, as in the case of semiconductor manufacturing. That is, a printed circuit board is manufactured by forming a predetermined pattern on the substrate surface by an exposure apparatus and then forming the pattern on the substrate by an etching process on a substrate surface coated with a photosensitive material such as a photoresist.
この露光装置において、パターン原画が描かれた原版として樹脂フィルムやガラス等のフォトマスクが用いられ、露光に際しては、該フォトマスクと基板の位置合わせが高精度の製品を得る上で重要である。
そのため、フォトマスクと基板側に位置合わせのためのマークを形成しておき、該マークに基づいて位置合わせをするのが普通である。通常はフォトマスクと基板側にそれぞれ複数のマークを設け、該マークの重心を求めて該重心を一致させることにより位置合わせを行っている。
In this exposure apparatus, a photomask such as a resin film or glass is used as an original on which an original pattern is drawn. In exposure, alignment of the photomask and the substrate is important for obtaining a highly accurate product.
For this reason, it is usual to form a mark for alignment on the photomask and the substrate side and perform alignment based on the mark. Usually, alignment is performed by providing a plurality of marks on the photomask and the substrate side, obtaining the center of gravity of the mark, and matching the center of gravity.
しかし、プリント配線基板及びフォトマスクは、温度や湿度及び他の工程上の理由で、伸縮や変形を起こすことがあり、上記した重心によるフォトマスクと基板との位置合わせでは、精度が不十分になってきている。特に近年の高密度パターンのプリント配線基板の製造には、精度の問題が大きくなって来ている。
本発明は上記従来技術の問題を解決することを目的とする。
However, printed circuit boards and photomasks may expand and contract due to temperature, humidity and other process reasons, and the alignment between the photomask and the substrate using the center of gravity described above is insufficient. It has become to. In particular, the problem of accuracy has been increasing in the production of printed wiring boards having a high-density pattern in recent years.
The object of the present invention is to solve the problems of the prior art.
上記目的を達成するために、本発明の露光装置は、被露光対象である基板の複数の位置P点に設けられ、該基板と露光すべきパターンを描いたフォトマスクとを位置合わせするための複数の基板マークと、前記複数の基板マークのそれぞれに対応して前記フォトマスクに設けられた複数のマスクマークと、前記基板とフォトマスクとの位置合わせを行い、その時の各P点における前記各基板マークと対応するマスクマークの位置のずれDpを検出する手段と、前記ずれDpの最大値MDpを検出する手段と、前記位置合わせをN回繰り返し、各回の最大値MDpを検出する手段と、前記N個の最大値MDpの中の最小値MDminを検出する手段と、該最小値MDminが所定値以下か否か判別する手段と、前記判別する手段により所定値以下と判別されたら、該MDminが得られたn回目の位置合わせ位置を最も適当な位置合わせ位置と判定する手段と、を備えたことを特徴とする。
In order to achieve the above object, an exposure apparatus of the present invention is provided at a plurality of positions P on a substrate to be exposed, and aligns the substrate with a photomask on which a pattern to be exposed is drawn. A plurality of substrate marks, a plurality of mask marks provided on the photomask corresponding to each of the plurality of substrate marks, and the substrate and the photomask are aligned, and each of the P points at each time point Means for detecting a position deviation Dp of the mask mark corresponding to the substrate mark, means for detecting the maximum value MDp of the deviation Dp, means for detecting the maximum value MDp each time by repeating the alignment N times, Means for detecting a minimum value MDmin among the N maximum values MDp; means for determining whether or not the minimum value MDmin is equal to or less than a predetermined value; And When it is determined, characterized by comprising means for determining the most appropriate alignment position alignment position of the MDmin was obtained the n-th and.
本発明の露光装置によれば、基板とフォトマスクの最適な位置合わせが行える効果がある。 According to the exposure apparatus of the present invention, there is an effect that optimum alignment between the substrate and the photomask can be performed.
以下本発明の実施の形態を図面に基づいて説明する。
図1はプリント配線基板を製造するための露光装置であり、フォトレジストを施された基板Wはプラテン3上に載置され、移動機構2によりXYZ及びθ方向に移動可能になっている。
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows an exposure apparatus for manufacturing a printed wiring board. A substrate W coated with a photoresist is placed on a
回路パターンが描かれたフォトマスクMは基板Wに対向して設けられており、フォトマスクMと基板Wとを近接或いは密着させ、露光光源5からの露光により回路パターンを基板Wに焼き付けるようなっている。
The photomask M on which the circuit pattern is drawn is provided so as to face the substrate W. The photomask M and the substrate W are brought close to or in close contact with each other, and the circuit pattern is printed on the substrate W by exposure from the
なお、図1では基板WとフォトマスクMは上下方向に配設されているが、これに限定されるものではなく、逆であっても良いし、或いは基板WとフォトマスクMを垂直に立てて配設する構造も可能である。
また、プラテン3を移動させるのではなくフォトマスクMを移動させることも可能であり、更に両者を移動させるように構成することも可能である。
In FIG. 1, the substrate W and the photomask M are arranged in the vertical direction. However, the substrate W and the photomask M are not limited to this and may be reversed, or the substrate W and the photomask M are set up vertically. It is also possible to have a structure in which the two are arranged.
Further, it is possible to move the photomask M instead of moving the
基板WとフォトマスクMには夫々対応する位置に基板マーク10とマスクマーク20が設けられている。この実施形態では、P1、P2、P3、P4の位置にマークが設けられている。そしてCCDカメラ4、4により、各点Pnにおける基板マーク10とマスクマーク20のずれDpを検出して最適な基板WとフォトマスクMの位置合わせを実現するようになっている。
CCDカメラ4、4の画像信号は演算制御装置1に送られ、演算制御装置1は移動機構2を制御して、位置合わせのためにプラテン3を移動させるように構成されている。
Image signals from the
演算制御装置1には検出装置7と判別/判定装置8が設けられており、検出装置7において、マークのずれなどを検出し、判別/判定装置8において、判別と判定を行うようになっている。検出装置7と判別/判定装置8の動作は後述する。演算制御装置1と検出装置7及び判別/判定装置8はコンピュータ等により構成される。
The
図2において、(A)に示すように、基板Wが変形により△だけずれている場合を想定する。
このような状況で従来技術のようにマスク重心と基板重心を一致させても、(C)に示すようにP2点において3/4△しか修正されない。
従って、もし規格値が3/4△未満であった場合、このプリント基板Wは位置合わせをして露光したものの、不良基板となってしまう。
In FIG. 2, it is assumed that the substrate W is displaced by Δ due to deformation, as shown in FIG.
In such a situation, even if the center of gravity of the mask and the center of gravity of the substrate coincide with each other as in the prior art, only 3 / 4Δ is corrected at the point P2 as shown in FIG.
Therefore, if the standard value is less than 3 / 4Δ, the printed board W becomes a defective board although it has been aligned and exposed.
本発明においては、図2の(B)に示すように、重心による位置合わせを行わずに、N回の位置合わせを行い、各点P1乃至P4において、マークのずれDpを検出し、最適な位置を決定するように構成されている。
なお、N回の位置合わせは計算によるシミュレーションで行うことが望ましい。
In the present invention, as shown in FIG. 2B, alignment is performed N times without performing alignment based on the center of gravity, and a mark shift Dp is detected at each of the points P1 to P4. It is configured to determine a position.
In addition, it is desirable to perform the alignment of N times by simulation by calculation.
以下その構成を図3を参照しつつ説明する。
<ステップ1>
最初に、一次的な位置合わせを行い、基板マーク10とマスクマーク20とがCCDカメラ4の視野に入るように設定する(S1)。
The configuration will be described below with reference to FIG.
<
First, primary alignment is performed, and setting is performed so that the
<ステップ2>
基板WとマスクMの位置合わせを行い、P1、P2、P3、P4における基板マーク10とマスクマーク20のずれDpを検出する(S2)。この中の最大値MDpを記憶する(S3)。
<
The substrate W and the mask M are aligned, and a deviation Dp between the
<ステップ3>
ステップ2をN回繰り返し(S4)、N個の最大値MDpを検出し、その中の最小値MDpminを求める(S5)。
これらの検出は検出装置7において行われる。
<
These detections are performed in the
<ステップ4>
MDpmin<所定値か否か判別/判定装置8において判別し(S6)、所定値以下であれば、該最小値MDpminを検出したn回目の位置合わせの位置が最適位置と判定する(S7)。
所定値以下でなければ、該基板Wは不良品と判定する(S8)。
<
The determination /
If not less than the predetermined value, the substrate W is determined to be defective (S8).
以上の構成により、基板WとマスクMの最適な位置合わせが行われる。
図4は、マスクマーク20を中心としてそのずれDの許容範囲(D公差)内に基板マーク10が位置する状態を示している。
本発明においては、基板Wが伸びた場合も(A)、縮んだ場合も(C)、D公差内に入り、また標準な場合には(B)ほぼ公差の中央部に位置し、常に最適な位置合わせが行えることがわかる。
With the above configuration, optimal alignment between the substrate W and the mask M is performed.
FIG. 4 shows a state in which the
In the present invention, even when the substrate W is stretched (A), when it is shrunk (C), it is within the D tolerance, and in the standard case (B) is located at the center of the tolerance and is always optimal. It can be seen that accurate alignment can be performed.
1:演算制御装置、2:移動機構、3:プラテン、4:CCDカメラ、5:露光光源、6:シャッタ、7:検出装置、8:判別/判定装置、10:基板マーク、20:マスクマーク。 1: arithmetic control device, 2: moving mechanism, 3: platen, 4: CCD camera, 5: exposure light source, 6: shutter, 7: detection device, 8: discrimination / judgment device, 10: substrate mark, 20: mask mark .
Claims (4)
前記複数の基板マークのそれぞれに対応して前記フォトマスクに設けられた複数のマスクマークと、
前記基板とフォトマスクとの位置合わせを行い、その時の各P点における前記各基板マークと対応するマスクマークの位置のずれDpを検出する手段と、
前記ずれDpの最大値MDpを検出する手段と、
前記位置合わせをN回繰り返し、各回の最大値MDpを検出する手段と、
前記N個の最大値MDpの中の最小値MDminを検出する手段と、
該最小値MDminが所定値以下か否か判別する手段と、
前記判別する手段により所定値以下と判別されたら、該MDminが得られたn回目の位置合わせ位置を最も適当な位置合わせ位置と判定する手段と、
を備えたことを特徴とする露光装置。 A plurality of substrate marks provided at a plurality of positions P of the substrate to be exposed and for aligning the substrate and a photomask depicting a pattern to be exposed;
A plurality of mask marks provided on the photomask corresponding to each of the plurality of substrate marks;
Means for aligning the substrate and the photomask, and detecting a shift Dp of the position of the mask mark corresponding to each substrate mark at each P point at that time;
Means for detecting a maximum value MDp of the deviation Dp;
Means for repeating the alignment N times and detecting the maximum value MDp of each time;
Means for detecting a minimum value MDmin among the N maximum values MDp;
Means for determining whether the minimum value MDmin is equal to or less than a predetermined value;
Means for determining the n- th alignment position from which the MDmin is obtained as the most appropriate alignment position when determined by the determining means to be equal to or less than a predetermined value;
An exposure apparatus comprising:
請求項1に記載の露光装置。 A means for performing the N alignments by calculation ;
The exposure apparatus according to claim 1.
前記基板とフォトマスクとの位置合わせを行い、その時の各P点における前記各基板マークと対応するマスクマークの位置のずれDpを検出するステップと、
前記ずれDpの最大値MDpを検出するステップと、
前記位置合わせをN回繰り返し、各回の最大値MDpを検出するステップと、
前記N個の最大値MDpの中の最小値MDminを検出するステップと、
該最小値MDminが所定値以下か否か判別するステップと、
前記判別する手段により所定値以下と判別されたら、該MDminが得られたn回目の位置合わせ位置を最も適当な位置合わせ位置と判定するステップと、
を有する位置合わせ方法。 A plurality of substrate marks provided at a plurality of positions P of the substrate to be exposed for aligning the substrate and a photomask depicting a pattern to be exposed, and corresponding to each of the plurality of substrate marks A plurality of mask marks provided on the photomask, and an alignment method for performing alignment based on the mask mark,
Performing alignment between the substrate and the photomask, and detecting a shift Dp of the position of the mask mark corresponding to each substrate mark at each P point at that time;
Detecting a maximum value MDp of the deviation Dp;
Repeating the alignment N times and detecting the maximum value MDp of each time;
Detecting a minimum value MDmin among the N maximum values MDp;
Determining whether the minimum value MDmin is less than or equal to a predetermined value;
Determining that the n- th alignment position from which the MDmin is obtained is the most appropriate alignment position when determined by the determining means to be equal to or less than a predetermined value;
An alignment method.
請求項3に記載の位置合わせ方法。 Performing the N alignments by calculation ,
The alignment method according to claim 3.
Priority Applications (4)
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JP2004084615A JP4401834B2 (en) | 2004-03-23 | 2004-03-23 | Exposure apparatus and alignment method |
TW094104615A TW200532399A (en) | 2004-03-23 | 2005-02-17 | Exposure device and positioning method |
KR1020050014531A KR101089839B1 (en) | 2004-03-23 | 2005-02-22 | Pojection exposure device and position alignment method |
CNB2005100590781A CN100552544C (en) | 2004-03-23 | 2005-03-21 | Exposure device and localization method |
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JP2004084615A JP4401834B2 (en) | 2004-03-23 | 2004-03-23 | Exposure apparatus and alignment method |
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JP4401834B2 true JP4401834B2 (en) | 2010-01-20 |
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KR (1) | KR101089839B1 (en) |
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JP5055095B2 (en) * | 2007-11-06 | 2012-10-24 | 株式会社ヤチヨ・コーポレイション | Measuring apparatus and measuring method |
JP5633021B2 (en) * | 2009-06-29 | 2014-12-03 | 株式会社ブイ・テクノロジー | Alignment method, alignment apparatus, and exposure apparatus |
JP5757857B2 (en) * | 2011-12-27 | 2015-08-05 | 新光電気工業株式会社 | Correction method of wiring board machining position |
JP7019975B2 (en) * | 2017-06-21 | 2022-02-16 | 株式会社ニコン | Alignment method, alignment device and program |
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JP2001083714A (en) | 1999-09-10 | 2001-03-30 | Hitachi Electronics Eng Co Ltd | Substrate alignment mechanism of exposure device |
JP2001109169A (en) * | 1999-10-13 | 2001-04-20 | Nikon Corp | Aligner, exposure method and mask |
JP4508354B2 (en) | 2000-04-28 | 2010-07-21 | キヤノン株式会社 | Scanning exposure apparatus and scanning exposure method |
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