JP4393063B2 - 複合パターンのための位相シフトマスキング - Google Patents

複合パターンのための位相シフトマスキング Download PDF

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Publication number
JP4393063B2
JP4393063B2 JP2002508143A JP2002508143A JP4393063B2 JP 4393063 B2 JP4393063 B2 JP 4393063B2 JP 2002508143 A JP2002508143 A JP 2002508143A JP 2002508143 A JP2002508143 A JP 2002508143A JP 4393063 B2 JP4393063 B2 JP 4393063B2
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JP
Japan
Prior art keywords
phase shift
phase
region
feature
mask
Prior art date
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Expired - Lifetime
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JP2002508143A
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English (en)
Japanese (ja)
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JP2004502971A5 (cg-RX-API-DMAC7.html
JP2004502971A (ja
Inventor
クリストフ ピアラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synopsys Inc
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Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US09/669,359 external-priority patent/US6503666B1/en
Application filed by Synopsys Inc filed Critical Synopsys Inc
Publication of JP2004502971A publication Critical patent/JP2004502971A/ja
Publication of JP2004502971A5 publication Critical patent/JP2004502971A5/ja
Application granted granted Critical
Publication of JP4393063B2 publication Critical patent/JP4393063B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
JP2002508143A 2000-07-05 2000-11-28 複合パターンのための位相シフトマスキング Expired - Lifetime JP4393063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21593800P 2000-07-05 2000-07-05
US09/669,359 US6503666B1 (en) 2000-07-05 2000-09-26 Phase shift masking for complex patterns
PCT/US2000/042284 WO2002003140A1 (en) 2000-07-05 2000-11-28 Phase shift masking for complex patterns

Publications (3)

Publication Number Publication Date
JP2004502971A JP2004502971A (ja) 2004-01-29
JP2004502971A5 JP2004502971A5 (cg-RX-API-DMAC7.html) 2005-12-22
JP4393063B2 true JP4393063B2 (ja) 2010-01-06

Family

ID=26910506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002508143A Expired - Lifetime JP4393063B2 (ja) 2000-07-05 2000-11-28 複合パターンのための位相シフトマスキング

Country Status (6)

Country Link
EP (2) EP1299771B1 (cg-RX-API-DMAC7.html)
JP (1) JP4393063B2 (cg-RX-API-DMAC7.html)
CN (1) CN1218217C (cg-RX-API-DMAC7.html)
AT (1) ATE502321T1 (cg-RX-API-DMAC7.html)
AU (1) AU2001239698A1 (cg-RX-API-DMAC7.html)
DE (1) DE60045744D1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR100586549B1 (ko) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 포토 마스크 및 이를 이용한 패턴 제조 방법
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
US8065638B2 (en) * 2009-01-30 2011-11-22 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
WO2011051791A2 (en) 2009-10-30 2011-05-05 Synopsys, Inc. Method and system for lithography hotspot correction of a post-route layout

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589305A (en) * 1990-11-29 1996-12-31 Kabushiki Kaisha Toshiba Method of fabricating a reticle
US5246800A (en) 1991-09-12 1993-09-21 Etec Systems, Inc. Discrete phase shift mask writing
DE69328220T2 (de) 1992-09-01 2000-08-24 Dai Nippon Printing Co., Ltd. Verfahren zur Herstellung einer Phasenschiebermaske oder eines Phasenschiebermasken-Rohlings
US5362584A (en) * 1993-04-02 1994-11-08 International Business Machines Corporation Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas
US5496666A (en) * 1994-10-27 1996-03-05 Chartered Semiconductor Manufacturing Pte Ltd. Contact hole mask for semiconductor fabrication
US5472814A (en) 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
US5523186A (en) * 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP2790127B2 (ja) * 1996-06-27 1998-08-27 日本電気株式会社 フォトマスク及びその製造方法
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5923566A (en) * 1997-03-25 1999-07-13 International Business Machines Corporation Phase shifted design verification routine
US6057063A (en) 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
JPH11109603A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp フォトマスクおよび半導体装置の製造方法
US6096458A (en) 1998-08-05 2000-08-01 International Business Machines Corporation Methods for manufacturing photolithography masks utilizing interfering beams of radiation

Also Published As

Publication number Publication date
CN1218217C (zh) 2005-09-07
EP2322992B1 (en) 2013-07-24
EP2322992A1 (en) 2011-05-18
AU2001239698A1 (en) 2002-01-14
DE60045744D1 (de) 2011-04-28
ATE502321T1 (de) 2011-04-15
EP1299771A1 (en) 2003-04-09
EP1299771B1 (en) 2011-03-16
JP2004502971A (ja) 2004-01-29
CN1454332A (zh) 2003-11-05

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