ATE502321T1 - Verfahren zum entwerfen einer phasenschiebermaske für komplexe muster - Google Patents

Verfahren zum entwerfen einer phasenschiebermaske für komplexe muster

Info

Publication number
ATE502321T1
ATE502321T1 AT00992248T AT00992248T ATE502321T1 AT E502321 T1 ATE502321 T1 AT E502321T1 AT 00992248 T AT00992248 T AT 00992248T AT 00992248 T AT00992248 T AT 00992248T AT E502321 T1 ATE502321 T1 AT E502321T1
Authority
AT
Austria
Prior art keywords
features
phase shift
phase
structures
regions
Prior art date
Application number
AT00992248T
Other languages
German (de)
English (en)
Inventor
Christophe Pierrat
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/669,359 external-priority patent/US6503666B1/en
Application filed by Synopsys Inc filed Critical Synopsys Inc
Application granted granted Critical
Publication of ATE502321T1 publication Critical patent/ATE502321T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
AT00992248T 2000-07-05 2000-11-28 Verfahren zum entwerfen einer phasenschiebermaske für komplexe muster ATE502321T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21593800P 2000-07-05 2000-07-05
US09/669,359 US6503666B1 (en) 2000-07-05 2000-09-26 Phase shift masking for complex patterns
PCT/US2000/042284 WO2002003140A1 (en) 2000-07-05 2000-11-28 Phase shift masking for complex patterns

Publications (1)

Publication Number Publication Date
ATE502321T1 true ATE502321T1 (de) 2011-04-15

Family

ID=26910506

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00992248T ATE502321T1 (de) 2000-07-05 2000-11-28 Verfahren zum entwerfen einer phasenschiebermaske für komplexe muster

Country Status (6)

Country Link
EP (2) EP1299771B1 (cg-RX-API-DMAC7.html)
JP (1) JP4393063B2 (cg-RX-API-DMAC7.html)
CN (1) CN1218217C (cg-RX-API-DMAC7.html)
AT (1) ATE502321T1 (cg-RX-API-DMAC7.html)
AU (1) AU2001239698A1 (cg-RX-API-DMAC7.html)
DE (1) DE60045744D1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR100586549B1 (ko) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 포토 마스크 및 이를 이용한 패턴 제조 방법
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
US8065638B2 (en) * 2009-01-30 2011-11-22 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
WO2011051791A2 (en) 2009-10-30 2011-05-05 Synopsys, Inc. Method and system for lithography hotspot correction of a post-route layout

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589305A (en) * 1990-11-29 1996-12-31 Kabushiki Kaisha Toshiba Method of fabricating a reticle
US5246800A (en) 1991-09-12 1993-09-21 Etec Systems, Inc. Discrete phase shift mask writing
DE69328220T2 (de) 1992-09-01 2000-08-24 Dai Nippon Printing Co., Ltd. Verfahren zur Herstellung einer Phasenschiebermaske oder eines Phasenschiebermasken-Rohlings
US5362584A (en) * 1993-04-02 1994-11-08 International Business Machines Corporation Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas
US5496666A (en) * 1994-10-27 1996-03-05 Chartered Semiconductor Manufacturing Pte Ltd. Contact hole mask for semiconductor fabrication
US5472814A (en) 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
US5523186A (en) * 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP2790127B2 (ja) * 1996-06-27 1998-08-27 日本電気株式会社 フォトマスク及びその製造方法
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5923566A (en) * 1997-03-25 1999-07-13 International Business Machines Corporation Phase shifted design verification routine
US6057063A (en) 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
JPH11109603A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp フォトマスクおよび半導体装置の製造方法
US6096458A (en) 1998-08-05 2000-08-01 International Business Machines Corporation Methods for manufacturing photolithography masks utilizing interfering beams of radiation

Also Published As

Publication number Publication date
CN1218217C (zh) 2005-09-07
EP2322992B1 (en) 2013-07-24
EP2322992A1 (en) 2011-05-18
AU2001239698A1 (en) 2002-01-14
DE60045744D1 (de) 2011-04-28
JP4393063B2 (ja) 2010-01-06
EP1299771A1 (en) 2003-04-09
EP1299771B1 (en) 2011-03-16
JP2004502971A (ja) 2004-01-29
CN1454332A (zh) 2003-11-05

Similar Documents

Publication Publication Date Title
CN101799623B (zh) 双图案设计中的单元边界隔离的方法
US8327301B2 (en) Routing method for double patterning design
US6420074B2 (en) Phase shifting circuit manufacture method and apparatus
PT927381E (pt) Metodo e dispositivo de producao de circuitos de mudanca de fase
US7165234B2 (en) Model-based data conversion
US7504184B2 (en) Phase-shifting mask for equal line/space dense line patterns
JPH08179492A (ja) 位相シフトマスクパターニングのためのｉ線ステッパリソグラフィ法
KR20200050419A (ko) 필러 셀 영역을 갖는 반도체 디바이스, 레이아웃 다이어그램을 생성하는 방법 및 그 시스템
CN112731758B (zh) 切割道标记及光刻掩膜版版图的设计方法、设计装置
ATE502321T1 (de) Verfahren zum entwerfen einer phasenschiebermaske für komplexe muster
US20140035151A1 (en) Integrated circuits and methods for fabricating integrated circuits using double patterning processes
US20100017780A1 (en) Differential alternating phase shift mask optimization
CN101373328A (zh) 精细掩模及使用精细掩模形成掩模图案的方法
Kotani et al. Yield-enhanced layout generation by new design for manufacturability (DfM) flow
US7504183B2 (en) Chromeless phase-shifting mask for equal line/space dense line patterns
US7445874B2 (en) Method to resolve line end distortion for alternating phase shift mask
CN107169185B (zh) 一种基于窗口的双重图形版图配色方法
US20070082276A1 (en) Notched trim mask for phase shifting mask
US7914950B2 (en) Method and resulting structure for mosaic of multi-transmission rate optical mask structures
Ghosh et al. PsmLint: Bringing Altpsm benefits to the IC design stage
KR100835469B1 (ko) 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
KR930018322A (ko) 노출 마스크 및 그의 제조 방법
Ghosh et al. New DFM approach abstracts altPSM lithography requirements for sub-100 nm IC design domains
US20040023124A1 (en) Photolithography process with hybrid chromeless phase shift mask
Yu et al. FPGA chip performance improvement with gate shrink through alternating PSM 90nm process

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties