JP4391126B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4391126B2
JP4391126B2 JP2003137169A JP2003137169A JP4391126B2 JP 4391126 B2 JP4391126 B2 JP 4391126B2 JP 2003137169 A JP2003137169 A JP 2003137169A JP 2003137169 A JP2003137169 A JP 2003137169A JP 4391126 B2 JP4391126 B2 JP 4391126B2
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Japan
Prior art keywords
electrode
insulating film
film
light
interlayer insulating
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Expired - Fee Related
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JP2003137169A
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English (en)
Japanese (ja)
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JP2004047446A5 (https=
JP2004047446A (ja
Inventor
舜平 山崎
智史 村上
光明 納
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003137169A priority Critical patent/JP4391126B2/ja
Publication of JP2004047446A publication Critical patent/JP2004047446A/ja
Publication of JP2004047446A5 publication Critical patent/JP2004047446A5/ja
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JP2003137169A 2002-05-15 2003-05-15 発光装置の作製方法 Expired - Fee Related JP4391126B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003137169A JP4391126B2 (ja) 2002-05-15 2003-05-15 発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002139934 2002-05-15
JP2003137169A JP4391126B2 (ja) 2002-05-15 2003-05-15 発光装置の作製方法

Publications (3)

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JP2004047446A JP2004047446A (ja) 2004-02-12
JP2004047446A5 JP2004047446A5 (https=) 2006-06-01
JP4391126B2 true JP4391126B2 (ja) 2009-12-24

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JP2003137169A Expired - Fee Related JP4391126B2 (ja) 2002-05-15 2003-05-15 発光装置の作製方法

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5072202B2 (ja) * 2004-07-30 2012-11-14 株式会社半導体エネルギー研究所 表示装置の作製方法
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
CN1819300B (zh) * 2004-09-17 2010-06-16 株式会社半导体能源研究所 发光器件
JP2006114493A (ja) * 2004-09-17 2006-04-27 Semiconductor Energy Lab Co Ltd 発光装置
JP4954527B2 (ja) * 2004-10-14 2012-06-20 株式会社半導体エネルギー研究所 表示装置の作製方法
US8772783B2 (en) 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101054344B1 (ko) 2004-11-17 2011-08-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TWI475667B (zh) * 2005-03-28 2015-03-01 半導體能源研究所股份有限公司 記憶裝置和其製造方法
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
CN101322440B (zh) * 2005-12-05 2012-04-18 夏普株式会社 有机电致发光面板和有机电致发光显示装置
JP5046521B2 (ja) 2006-01-18 2012-10-10 株式会社半導体エネルギー研究所 発光装置
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101041146B1 (ko) * 2009-09-02 2011-06-13 삼성모바일디스플레이주식회사 표시 장치
DE102010050507A1 (de) * 2010-11-08 2012-05-24 H.C. Starck Clevios Gmbh Verfahren zur Herstellung von Schichtkörpern durch Behandlung mit organischen Ätzmitteln und daraus erhältliche Schichtkörper
JP6476449B2 (ja) * 2014-12-16 2019-03-06 株式会社Ｊｏｌｅｄ 表示パネル、および表示パネルの製造方法
JP6906363B2 (ja) * 2017-05-16 2021-07-21 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0527996U (ja) * 1991-09-18 1993-04-09 沖電気工業株式会社 Ｅｌデイスプレイ素子
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
JP4730994B2 (ja) * 1999-06-04 2011-07-20 株式会社半導体エネルギー研究所 電気光学装置及びその作製方法並びに電子装置
JP4337171B2 (ja) * 1999-06-14 2009-09-30 ソニー株式会社 表示装置
JP2001351787A (ja) * 2000-06-07 2001-12-21 Sharp Corp 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ
JP2002083689A (ja) * 2000-06-29 2002-03-22 Semiconductor Energy Lab Co Ltd 発光装置
JP4884609B2 (ja) * 2000-08-10 2012-02-29 株式会社半導体エネルギー研究所 表示装置及びその駆動方法、並びに電子機器

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JP2004047446A (ja) 2004-02-12

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